JP5828378B2 - 圧力センサーデバイスの製造方法 - Google Patents
圧力センサーデバイスの製造方法 Download PDFInfo
- Publication number
- JP5828378B2 JP5828378B2 JP2011136010A JP2011136010A JP5828378B2 JP 5828378 B2 JP5828378 B2 JP 5828378B2 JP 2011136010 A JP2011136010 A JP 2011136010A JP 2011136010 A JP2011136010 A JP 2011136010A JP 5828378 B2 JP5828378 B2 JP 5828378B2
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- JP
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- Prior art keywords
- film
- pressure sensor
- substrate
- forming
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 18
- 239000012528 membrane Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Landscapes
- Measuring Fluid Pressure (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011136010A JP5828378B2 (ja) | 2011-06-20 | 2011-06-20 | 圧力センサーデバイスの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011136010A JP5828378B2 (ja) | 2011-06-20 | 2011-06-20 | 圧力センサーデバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013003031A JP2013003031A (ja) | 2013-01-07 |
| JP2013003031A5 JP2013003031A5 (enExample) | 2014-07-31 |
| JP5828378B2 true JP5828378B2 (ja) | 2015-12-02 |
Family
ID=47671738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011136010A Expired - Fee Related JP5828378B2 (ja) | 2011-06-20 | 2011-06-20 | 圧力センサーデバイスの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5828378B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6824504B2 (ja) * | 2015-03-06 | 2021-02-03 | 株式会社ＢｌｕｅＳｐｉｎ | 磁気メモリ、磁気メモリへのデータ書き込み方法及び半導体装置 |
| JP6541066B2 (ja) * | 2015-06-08 | 2019-07-10 | セイコーＮｐｃ株式会社 | 圧力センサ |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5177661A (en) * | 1989-01-13 | 1993-01-05 | Kopin Corporation | SOI diaphgram sensor |
| EP0702221A3 (en) * | 1994-09-14 | 1997-05-21 | Delco Electronics Corp | Sensor integrated on a chip |
| US6928879B2 (en) * | 2003-02-26 | 2005-08-16 | Robert Bosch Gmbh | Episeal pressure sensor and method for making an episeal pressure sensor |
| JP2009139340A (ja) * | 2007-12-10 | 2009-06-25 | Seiko Epson Corp | 圧力センサの製造方法、圧力センサ、半導体装置、電子機器 |
| JP5220866B2 (ja) * | 2008-11-17 | 2013-06-26 | アルプス電気株式会社 | 半導体圧力センサ |
-
2011
- 2011-06-20 JP JP2011136010A patent/JP5828378B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013003031A (ja) | 2013-01-07 |
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