JP5823749B2 - 光デバイス基板の分割方法 - Google Patents

光デバイス基板の分割方法 Download PDF

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Publication number
JP5823749B2
JP5823749B2 JP2011152878A JP2011152878A JP5823749B2 JP 5823749 B2 JP5823749 B2 JP 5823749B2 JP 2011152878 A JP2011152878 A JP 2011152878A JP 2011152878 A JP2011152878 A JP 2011152878A JP 5823749 B2 JP5823749 B2 JP 5823749B2
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JP
Japan
Prior art keywords
optical device
substrate
laser processing
processing groove
forming step
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Active
Application number
JP2011152878A
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English (en)
Japanese (ja)
Other versions
JP2013021114A (ja
Inventor
雄二 波多野
雄二 波多野
仁志 星野
仁志 星野
龍吾 大庭
龍吾 大庭
修 大町
修 大町
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2011152878A priority Critical patent/JP5823749B2/ja
Priority to TW101119306A priority patent/TWI527107B/zh
Priority to KR1020120070657A priority patent/KR101848512B1/ko
Priority to CN201210238513.7A priority patent/CN102881782B/zh
Priority to DE102012211984.1A priority patent/DE102012211984B4/de
Publication of JP2013021114A publication Critical patent/JP2013021114A/ja
Application granted granted Critical
Publication of JP5823749B2 publication Critical patent/JP5823749B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/044—Seam tracking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles, e.g. plated or painted; Surface treated articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
JP2011152878A 2011-07-11 2011-07-11 光デバイス基板の分割方法 Active JP5823749B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011152878A JP5823749B2 (ja) 2011-07-11 2011-07-11 光デバイス基板の分割方法
TW101119306A TWI527107B (zh) 2011-07-11 2012-05-30 Method of segmenting optical element substrate
KR1020120070657A KR101848512B1 (ko) 2011-07-11 2012-06-29 광디바이스 기판의 분할 방법
CN201210238513.7A CN102881782B (zh) 2011-07-11 2012-07-10 光器件衬底的分割方法
DE102012211984.1A DE102012211984B4 (de) 2011-07-11 2012-07-10 Trennverfahren für ein Substrat einer optischen Einrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011152878A JP5823749B2 (ja) 2011-07-11 2011-07-11 光デバイス基板の分割方法

Publications (2)

Publication Number Publication Date
JP2013021114A JP2013021114A (ja) 2013-01-31
JP5823749B2 true JP5823749B2 (ja) 2015-11-25

Family

ID=47425817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011152878A Active JP5823749B2 (ja) 2011-07-11 2011-07-11 光デバイス基板の分割方法

Country Status (5)

Country Link
JP (1) JP5823749B2 (de)
KR (1) KR101848512B1 (de)
CN (1) CN102881782B (de)
DE (1) DE102012211984B4 (de)
TW (1) TWI527107B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6152013B2 (ja) * 2013-08-16 2017-06-21 株式会社ディスコ ウェーハの加工方法
JP2015103674A (ja) * 2013-11-25 2015-06-04 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
JP2016004960A (ja) * 2014-06-19 2016-01-12 住友電気工業株式会社 半導体デバイスの製造方法
JP7082502B2 (ja) * 2018-03-06 2022-06-08 株式会社ディスコ ウェーハの加工方法
JP7043135B2 (ja) * 2018-05-15 2022-03-29 株式会社ディスコ ウェーハの加工方法
JP7034551B2 (ja) * 2018-05-15 2022-03-14 株式会社ディスコ 被加工物の加工方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148275A (ja) * 1995-11-17 1997-06-06 Disco Abrasive Syst Ltd 大口径ウェーハのダイシングシステム
JPH10305420A (ja) 1997-03-04 1998-11-17 Ngk Insulators Ltd 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法
JP3525061B2 (ja) 1998-09-25 2004-05-10 株式会社東芝 半導体発光素子の製造方法
TWI226139B (en) 2002-01-31 2005-01-01 Osram Opto Semiconductors Gmbh Method to manufacture a semiconductor-component
JP2008060617A (ja) * 2004-12-10 2008-03-13 Matsushita Electric Ind Co Ltd 電子データ検証装置、電子データ作成装置、電子データ検証方法、電子データ作成方法及び集積回路
JP2008028347A (ja) * 2006-07-25 2008-02-07 Disco Abrasive Syst Ltd 脆化域形成方法
JP5196097B2 (ja) * 2006-08-29 2013-05-15 日亜化学工業株式会社 半導体発光素子の製造方法及び半導体発光素子、並びにそれを用いた発光装置
JP5054496B2 (ja) * 2007-11-30 2012-10-24 浜松ホトニクス株式会社 加工対象物切断方法
JP2009146949A (ja) * 2007-12-11 2009-07-02 Disco Abrasive Syst Ltd ウエーハの分割方法
JP5171294B2 (ja) * 2008-02-06 2013-03-27 株式会社ディスコ レーザ加工方法
JP5495511B2 (ja) * 2008-05-27 2014-05-21 株式会社ディスコ ウエーハの分割方法
JP2009302369A (ja) * 2008-06-16 2009-12-24 Disco Abrasive Syst Ltd 板状物の加工方法及び加工装置
JP5446325B2 (ja) * 2009-03-03 2014-03-19 豊田合成株式会社 レーザ加工方法および化合物半導体発光素子の製造方法
JP5528015B2 (ja) * 2009-06-10 2014-06-25 株式会社ディスコ レーザ加工装置

Also Published As

Publication number Publication date
CN102881782A (zh) 2013-01-16
CN102881782B (zh) 2016-12-28
JP2013021114A (ja) 2013-01-31
DE102012211984B4 (de) 2021-03-04
DE102012211984A1 (de) 2013-01-17
TW201303990A (zh) 2013-01-16
KR101848512B1 (ko) 2018-04-12
KR20130007973A (ko) 2013-01-21
TWI527107B (zh) 2016-03-21

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