JP5808815B2 - イオン銃の改良及びイオン銃に関連する改良 - Google Patents

イオン銃の改良及びイオン銃に関連する改良 Download PDF

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Publication number
JP5808815B2
JP5808815B2 JP2013533165A JP2013533165A JP5808815B2 JP 5808815 B2 JP5808815 B2 JP 5808815B2 JP 2013533165 A JP2013533165 A JP 2013533165A JP 2013533165 A JP2013533165 A JP 2013533165A JP 5808815 B2 JP5808815 B2 JP 5808815B2
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Prior art keywords
ion
mass
ionized gas
ion gun
clusters
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Japanese (ja)
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JP2013541165A5 (enExample
JP2013541165A (ja
Inventor
ブライアン バーナード
ブライアン バーナード
Original Assignee
ヴィージー システムズ リミテッド
ヴィージー システムズ リミテッド
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2202—Preparing specimens therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/026—Cluster ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
    • H01J49/142—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers using a solid target which is not previously vapourised
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0822—Multiple sources
    • H01J2237/0827—Multiple sources for producing different ions sequentially
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Physical Vapour Deposition (AREA)
JP2013533165A 2010-10-12 2011-10-10 イオン銃の改良及びイオン銃に関連する改良 Active JP5808815B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1017173.4A GB2484488B (en) 2010-10-12 2010-10-12 Improvements in and relating to ion guns
GB1017173.4 2010-10-12
PCT/EP2011/067626 WO2012049110A2 (en) 2010-10-12 2011-10-10 Improvements in and relating to ion guns

Publications (3)

Publication Number Publication Date
JP2013541165A JP2013541165A (ja) 2013-11-07
JP2013541165A5 JP2013541165A5 (enExample) 2014-10-02
JP5808815B2 true JP5808815B2 (ja) 2015-11-10

Family

ID=43304416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013533165A Active JP5808815B2 (ja) 2010-10-12 2011-10-10 イオン銃の改良及びイオン銃に関連する改良

Country Status (5)

Country Link
US (1) US9478388B2 (enExample)
JP (1) JP5808815B2 (enExample)
CN (1) CN203466162U (enExample)
GB (1) GB2484488B (enExample)
WO (1) WO2012049110A2 (enExample)

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CN103180030B (zh) 2010-08-23 2017-04-12 艾克索乔纳斯公司 基于气体团簇离子束技术的中性射束处理方法和设备
US10825685B2 (en) 2010-08-23 2020-11-03 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US10181402B2 (en) * 2010-08-23 2019-01-15 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
JP2014086247A (ja) * 2012-10-23 2014-05-12 Canon Inc 超音速ビーム装置
US8963081B2 (en) * 2013-03-06 2015-02-24 Canon Kabushiki Kaisha Mass selector, and ion gun, ion irradiation apparatus and mass microscope
US8993982B2 (en) 2013-07-15 2015-03-31 Vg Systems Limited Switchable ion gun with improved gas inlet arrangement
JP2015138667A (ja) * 2014-01-22 2015-07-30 アルバック・ファイ株式会社 イオン源、イオン銃、分析装置
CN103956314B (zh) * 2014-05-04 2016-02-17 北京大学 一种微波驱动无铯负氢离子源
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置
JP6331960B2 (ja) * 2014-10-21 2018-05-30 住友金属鉱山株式会社 薄膜状の試料の前処理方法および分析方法
US11127909B2 (en) 2016-03-24 2021-09-21 Sony Corporation Photoelectric conversion element, measuring method of the same, solid-state imaging device, electronic device, and solar cell
JP6632937B2 (ja) * 2016-06-27 2020-01-22 アールエムテック株式会社 ガスクラスタービーム装置
CN107121694A (zh) * 2017-05-26 2017-09-01 宜昌后皇真空科技有限公司 一种在线监测脉冲气体团簇离子束的方法及系统
CN107393794B (zh) * 2017-08-07 2019-09-10 深圳江海行纳米科技有限公司 一种气体团簇离子源产生方法及装置
CN109862684B (zh) * 2018-12-21 2020-07-10 南京大学 单一尺寸强流团簇脉冲束产生方法
EP3705877A1 (en) * 2019-03-04 2020-09-09 VG Systems Limited Methods and apparatus for electron backscatter diffraction sample characterisation
CN110473765B (zh) * 2019-08-30 2024-04-26 西安交通大学 一种表面活化过程中高速氩原子束获得装置及获得方法
CN117012314B (zh) * 2023-08-11 2025-09-16 中国科学院深圳先进技术研究院 一种团簇动力学性质的表征分析方法、系统、电子设备及存储介质

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US4755344A (en) * 1980-04-11 1988-07-05 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for the production of cluster ions
US4847504A (en) * 1983-08-15 1989-07-11 Applied Materials, Inc. Apparatus and methods for ion implantation
JPH0831305B2 (ja) * 1986-09-25 1996-03-27 ソニー株式会社 イオンビ−ム装置
JPH08122283A (ja) 1994-10-20 1996-05-17 Matsushita Electric Ind Co Ltd 表面分析方法
GB9612070D0 (en) * 1996-06-10 1996-08-14 Micromass Ltd Plasma mass spectrometer
US6635883B2 (en) * 1999-12-06 2003-10-21 Epion Corporation Gas cluster ion beam low mass ion filter
US7838842B2 (en) 1999-12-13 2010-11-23 Semequip, Inc. Dual mode ion source for ion implantation
GB2386747A (en) 2001-11-08 2003-09-24 Ionoptika Ltd Fullerene ion gun
US7087913B2 (en) * 2003-10-17 2006-08-08 Applied Materials, Inc. Ion implanter electrodes
JP4497889B2 (ja) 2003-10-29 2010-07-07 アルバック・ファイ株式会社 電子分光分析方法及び分析装置
JP2006032229A (ja) * 2004-07-20 2006-02-02 Nissin Ion Equipment Co Ltd イオン注入装置
US7459704B2 (en) * 2004-11-12 2008-12-02 Varian Semiconductor Equipment Associates, Inc. Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms
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Also Published As

Publication number Publication date
GB201017173D0 (en) 2010-11-24
WO2012049110A3 (en) 2012-06-28
GB2484488B (en) 2013-04-17
US9478388B2 (en) 2016-10-25
WO2012049110A2 (en) 2012-04-19
GB2484488A (en) 2012-04-18
CN203466162U (zh) 2014-03-05
JP2013541165A (ja) 2013-11-07
US20130180844A1 (en) 2013-07-18

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