GB2484488B - Improvements in and relating to ion guns - Google Patents

Improvements in and relating to ion guns

Info

Publication number
GB2484488B
GB2484488B GB1017173.4A GB201017173A GB2484488B GB 2484488 B GB2484488 B GB 2484488B GB 201017173 A GB201017173 A GB 201017173A GB 2484488 B GB2484488 B GB 2484488B
Authority
GB
United Kingdom
Prior art keywords
relating
ion guns
guns
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1017173.4A
Other languages
English (en)
Other versions
GB2484488A (en
GB201017173D0 (en
Inventor
Bryan Barnard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
VG Systems Ltd
Original Assignee
VG Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by VG Systems Ltd filed Critical VG Systems Ltd
Priority to GB1017173.4A priority Critical patent/GB2484488B/en
Publication of GB201017173D0 publication Critical patent/GB201017173D0/en
Priority to CN201190000794.1U priority patent/CN203466162U/zh
Priority to JP2013533165A priority patent/JP5808815B2/ja
Priority to US13/823,499 priority patent/US9478388B2/en
Priority to PCT/EP2011/067626 priority patent/WO2012049110A2/en
Publication of GB2484488A publication Critical patent/GB2484488A/en
Application granted granted Critical
Publication of GB2484488B publication Critical patent/GB2484488B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2202—Preparing specimens therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/026—Cluster ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
    • H01J49/142—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers using a solid target which is not previously vapourised
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0822—Multiple sources
    • H01J2237/0827—Multiple sources for producing different ions sequentially
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Physical Vapour Deposition (AREA)
GB1017173.4A 2010-10-12 2010-10-12 Improvements in and relating to ion guns Active GB2484488B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB1017173.4A GB2484488B (en) 2010-10-12 2010-10-12 Improvements in and relating to ion guns
CN201190000794.1U CN203466162U (zh) 2010-10-12 2011-10-10 可转换的气体团簇和原子离子枪
JP2013533165A JP5808815B2 (ja) 2010-10-12 2011-10-10 イオン銃の改良及びイオン銃に関連する改良
US13/823,499 US9478388B2 (en) 2010-10-12 2011-10-10 Switchable gas cluster and atomic ion gun, and method of surface processing using the gun
PCT/EP2011/067626 WO2012049110A2 (en) 2010-10-12 2011-10-10 Improvements in and relating to ion guns

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1017173.4A GB2484488B (en) 2010-10-12 2010-10-12 Improvements in and relating to ion guns

Publications (3)

Publication Number Publication Date
GB201017173D0 GB201017173D0 (en) 2010-11-24
GB2484488A GB2484488A (en) 2012-04-18
GB2484488B true GB2484488B (en) 2013-04-17

Family

ID=43304416

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1017173.4A Active GB2484488B (en) 2010-10-12 2010-10-12 Improvements in and relating to ion guns

Country Status (5)

Country Link
US (1) US9478388B2 (enExample)
JP (1) JP5808815B2 (enExample)
CN (1) CN203466162U (enExample)
GB (1) GB2484488B (enExample)
WO (1) WO2012049110A2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2608872B1 (en) 2010-08-23 2019-07-31 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology
US10825685B2 (en) 2010-08-23 2020-11-03 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US10181402B2 (en) * 2010-08-23 2019-01-15 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
JP2014086247A (ja) * 2012-10-23 2014-05-12 Canon Inc 超音速ビーム装置
US8963081B2 (en) * 2013-03-06 2015-02-24 Canon Kabushiki Kaisha Mass selector, and ion gun, ion irradiation apparatus and mass microscope
US8993982B2 (en) 2013-07-15 2015-03-31 Vg Systems Limited Switchable ion gun with improved gas inlet arrangement
JP2015138667A (ja) * 2014-01-22 2015-07-30 アルバック・ファイ株式会社 イオン源、イオン銃、分析装置
CN103956314B (zh) * 2014-05-04 2016-02-17 北京大学 一种微波驱动无铯负氢离子源
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置
JP6331960B2 (ja) * 2014-10-21 2018-05-30 住友金属鉱山株式会社 薄膜状の試料の前処理方法および分析方法
US11127909B2 (en) 2016-03-24 2021-09-21 Sony Corporation Photoelectric conversion element, measuring method of the same, solid-state imaging device, electronic device, and solar cell
JP6632937B2 (ja) * 2016-06-27 2020-01-22 アールエムテック株式会社 ガスクラスタービーム装置
CN107121694A (zh) * 2017-05-26 2017-09-01 宜昌后皇真空科技有限公司 一种在线监测脉冲气体团簇离子束的方法及系统
CN107393794B (zh) * 2017-08-07 2019-09-10 深圳江海行纳米科技有限公司 一种气体团簇离子源产生方法及装置
CN109862684B (zh) * 2018-12-21 2020-07-10 南京大学 单一尺寸强流团簇脉冲束产生方法
EP3705877A1 (en) * 2019-03-04 2020-09-09 VG Systems Limited Methods and apparatus for electron backscatter diffraction sample characterisation
CN110473765B (zh) * 2019-08-30 2024-04-26 西安交通大学 一种表面活化过程中高速氩原子束获得装置及获得方法
CN117012314B (zh) * 2023-08-11 2025-09-16 中国科学院深圳先进技术研究院 一种团簇动力学性质的表征分析方法、系统、电子设备及存储介质

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060169915A1 (en) * 2004-11-12 2006-08-03 Varian Semiconductor Equipment Associates, Inc. Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms
WO2006127327A2 (en) * 2005-05-20 2006-11-30 Purser Kenneth H A resonance method for production of intense low-impurity ion beams of atoms and molecules
US20080105833A1 (en) * 2006-11-08 2008-05-08 Varian Semiconductor Equipment Associates, Ion implantation device with a dual pumping mode and method thereof

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US4755344A (en) * 1980-04-11 1988-07-05 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for the production of cluster ions
US4847504A (en) * 1983-08-15 1989-07-11 Applied Materials, Inc. Apparatus and methods for ion implantation
JPH0831305B2 (ja) * 1986-09-25 1996-03-27 ソニー株式会社 イオンビ−ム装置
JPH08122283A (ja) 1994-10-20 1996-05-17 Matsushita Electric Ind Co Ltd 表面分析方法
GB9612070D0 (en) * 1996-06-10 1996-08-14 Micromass Ltd Plasma mass spectrometer
US6635883B2 (en) * 1999-12-06 2003-10-21 Epion Corporation Gas cluster ion beam low mass ion filter
US7838842B2 (en) * 1999-12-13 2010-11-23 Semequip, Inc. Dual mode ion source for ion implantation
GB2386747A (en) 2001-11-08 2003-09-24 Ionoptika Ltd Fullerene ion gun
US7087913B2 (en) 2003-10-17 2006-08-08 Applied Materials, Inc. Ion implanter electrodes
JP4497889B2 (ja) 2003-10-29 2010-07-07 アルバック・ファイ株式会社 電子分光分析方法及び分析装置
JP2006032229A (ja) * 2004-07-20 2006-02-02 Nissin Ion Equipment Co Ltd イオン注入装置
JP2008116363A (ja) 2006-11-06 2008-05-22 Ulvac Japan Ltd 表面分析方法
JPWO2009131022A1 (ja) 2008-04-23 2011-08-18 株式会社アルバック 分析方法
GB2460855B (en) 2008-06-11 2013-02-27 Kratos Analytical Ltd Electron spectroscopy
US8263944B2 (en) * 2008-12-22 2012-09-11 Varian Semiconductor Equipment Associates, Inc. Directional gas injection for an ion source cathode assembly

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060169915A1 (en) * 2004-11-12 2006-08-03 Varian Semiconductor Equipment Associates, Inc. Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms
WO2006127327A2 (en) * 2005-05-20 2006-11-30 Purser Kenneth H A resonance method for production of intense low-impurity ion beams of atoms and molecules
US20080105833A1 (en) * 2006-11-08 2008-05-08 Varian Semiconductor Equipment Associates, Ion implantation device with a dual pumping mode and method thereof

Also Published As

Publication number Publication date
JP2013541165A (ja) 2013-11-07
JP5808815B2 (ja) 2015-11-10
GB2484488A (en) 2012-04-18
GB201017173D0 (en) 2010-11-24
US20130180844A1 (en) 2013-07-18
US9478388B2 (en) 2016-10-25
CN203466162U (zh) 2014-03-05
WO2012049110A3 (en) 2012-06-28
WO2012049110A2 (en) 2012-04-19

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