JP5803398B2 - 半導体装置、半導体装置の製造方法、及び、電子機器 - Google Patents

半導体装置、半導体装置の製造方法、及び、電子機器 Download PDF

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JP5803398B2
JP5803398B2 JP2011170666A JP2011170666A JP5803398B2 JP 5803398 B2 JP5803398 B2 JP 5803398B2 JP 2011170666 A JP2011170666 A JP 2011170666A JP 2011170666 A JP2011170666 A JP 2011170666A JP 5803398 B2 JP5803398 B2 JP 5803398B2
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Prior art keywords
layer
insulating layer
bonding
electrode
protective layer
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JP2011170666A
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English (en)
Japanese (ja)
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JP2013038112A5 (https=
JP2013038112A (ja
Inventor
恵永 香川
恵永 香川
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011170666A priority Critical patent/JP5803398B2/ja
Priority to TW101121190A priority patent/TWI495041B/zh
Priority to US13/533,526 priority patent/US8896125B2/en
Priority to KR1020120069684A priority patent/KR102030852B1/ko
Priority to CN201210233277.XA priority patent/CN102867847B/zh
Publication of JP2013038112A publication Critical patent/JP2013038112A/ja
Priority to US14/467,852 priority patent/US9111763B2/en
Publication of JP2013038112A5 publication Critical patent/JP2013038112A5/ja
Priority to US14/718,942 priority patent/US9443802B2/en
Application granted granted Critical
Publication of JP5803398B2 publication Critical patent/JP5803398B2/ja
Priority to US15/228,894 priority patent/US9911778B2/en
Priority to US15/228,860 priority patent/US10038024B2/en
Priority to US15/992,908 priority patent/US10431621B2/en
Priority to US16/410,877 priority patent/US10985102B2/en
Priority to KR1020190069266A priority patent/KR20190071647A/ko
Priority to KR1020200069977A priority patent/KR102298787B1/ko
Priority to US17/194,641 priority patent/US11569123B2/en
Priority to KR1020210112763A priority patent/KR102439964B1/ko
Priority to KR1020220109225A priority patent/KR102673911B1/ko
Priority to KR1020240073260A priority patent/KR102934233B1/ko
Priority to KR1020260036365A priority patent/KR20260036502A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/312—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of electrically conductive pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
    • H10W80/732—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding having shape changed during the connecting

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  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2011170666A 2011-07-05 2011-08-04 半導体装置、半導体装置の製造方法、及び、電子機器 Active JP5803398B2 (ja)

Priority Applications (18)

Application Number Priority Date Filing Date Title
JP2011170666A JP5803398B2 (ja) 2011-08-04 2011-08-04 半導体装置、半導体装置の製造方法、及び、電子機器
TW101121190A TWI495041B (zh) 2011-07-05 2012-06-13 半導體裝置、用於半導體裝置之製造方法及電子設備
US13/533,526 US8896125B2 (en) 2011-07-05 2012-06-26 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020120069684A KR102030852B1 (ko) 2011-07-05 2012-06-28 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
CN201210233277.XA CN102867847B (zh) 2011-07-05 2012-07-05 半导体器件、半导体器件制造方法及电子装置
US14/467,852 US9111763B2 (en) 2011-07-05 2014-08-25 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US14/718,942 US9443802B2 (en) 2011-07-05 2015-05-21 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/228,894 US9911778B2 (en) 2011-07-05 2016-08-04 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/228,860 US10038024B2 (en) 2011-07-05 2016-08-04 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/992,908 US10431621B2 (en) 2011-07-05 2018-05-30 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US16/410,877 US10985102B2 (en) 2011-07-05 2019-05-13 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020190069266A KR20190071647A (ko) 2011-07-05 2019-06-12 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
KR1020200069977A KR102298787B1 (ko) 2011-07-05 2020-06-10 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
US17/194,641 US11569123B2 (en) 2011-07-05 2021-03-08 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020210112763A KR102439964B1 (ko) 2011-07-05 2021-08-26 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
KR1020220109225A KR102673911B1 (ko) 2011-07-05 2022-08-30 반도체 장치, 반도체 장치의 제조 방법 및 전자 장치
KR1020240073260A KR102934233B1 (ko) 2011-07-05 2024-06-04 반도체 장치, 반도체 장치의 제조 방법 및 전자 장치
KR1020260036365A KR20260036502A (ko) 2011-07-05 2026-02-27 반도체 장치, 반도체 장치의 제조 방법 및 전자 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011170666A JP5803398B2 (ja) 2011-08-04 2011-08-04 半導体装置、半導体装置の製造方法、及び、電子機器

Publications (3)

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JP2013038112A JP2013038112A (ja) 2013-02-21
JP2013038112A5 JP2013038112A5 (https=) 2014-09-18
JP5803398B2 true JP5803398B2 (ja) 2015-11-04

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102161793B1 (ko) 2014-07-18 2020-10-06 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102267168B1 (ko) 2014-12-02 2021-06-21 삼성전자주식회사 반도체 장치의 제조 방법
JP2016181531A (ja) * 2015-03-23 2016-10-13 ソニー株式会社 半導体装置、および半導体装置の製造方法、固体撮像素子、撮像装置、並びに電子機器
US10355039B2 (en) * 2015-05-18 2019-07-16 Sony Corporation Semiconductor device and imaging device
JP6711614B2 (ja) * 2015-12-24 2020-06-17 キヤノン株式会社 半導体装置
JP6856983B2 (ja) 2016-06-30 2021-04-14 キヤノン株式会社 光電変換装置及びカメラ
CN112640112B (zh) * 2018-10-15 2025-02-25 索尼半导体解决方案公司 固体摄像装置和电子设备
JP7321724B2 (ja) * 2019-03-05 2023-08-07 キヤノン株式会社 半導体装置および機器
JP2020191334A (ja) 2019-05-20 2020-11-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
US20230245936A1 (en) * 2020-06-22 2023-08-03 Sekisui Chemical Co., Ltd. Laminate, curable resin composition, method for manufacturing laminate, method for manufacturing substrate having junction electrode, semiconductor device, and image capturing device
JP2022082187A (ja) * 2020-11-20 2022-06-01 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法、並びに電子機器
KR20240121703A (ko) * 2021-12-23 2024-08-09 세키스이가가쿠 고교가부시키가이샤 경화성 수지 조성물, 경화막, 적층체, 촬상 장치, 반도체 장치, 적층체의 제조 방법 및 접합 전극을 갖는 소자의 제조 방법
KR20240166542A (ko) * 2022-03-30 2024-11-26 소니 세미컨덕터 솔루션즈 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법
WO2024202901A1 (ja) * 2023-03-30 2024-10-03 富士フイルム株式会社 接合体の製造方法、処理液および処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7049701B2 (en) * 2003-10-15 2006-05-23 Kabushiki Kaisha Toshiba Semiconductor device using insulating film of low dielectric constant as interlayer insulating film
JP2005142553A (ja) * 2003-10-15 2005-06-02 Toshiba Corp 半導体装置
JP5407660B2 (ja) * 2009-08-26 2014-02-05 ソニー株式会社 半導体装置の製造方法
JP2011146563A (ja) * 2010-01-15 2011-07-28 Panasonic Corp 半導体装置

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