JP5802672B2 - ハイブリッドガスインジェクタ - Google Patents

ハイブリッドガスインジェクタ Download PDF

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Publication number
JP5802672B2
JP5802672B2 JP2012531072A JP2012531072A JP5802672B2 JP 5802672 B2 JP5802672 B2 JP 5802672B2 JP 2012531072 A JP2012531072 A JP 2012531072A JP 2012531072 A JP2012531072 A JP 2012531072A JP 5802672 B2 JP5802672 B2 JP 5802672B2
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JP
Japan
Prior art keywords
gas injector
straw
connector
gas
tubular straw
Prior art date
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JP2012531072A
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English (en)
Japanese (ja)
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JP2013506300A (ja
JP2013506300A5 (https=
Inventor
ファーガル オムーア
ファーガル オムーア
カール ウィリアムズ
カール ウィリアムズ
ナム ル
ナム ル
ヴィンセント ブラウン
ヴィンセント ブラウン
Original Assignee
フェローテック（ユーエスエー）コーポレイション
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Publication of JP2013506300A5 publication Critical patent/JP2013506300A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2012531072A 2009-09-25 2010-09-24 ハイブリッドガスインジェクタ Active JP5802672B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US27736109P 2009-09-25 2009-09-25
US61/277,361 2009-09-25
PCT/US2010/050217 WO2011038242A2 (en) 2009-09-25 2010-09-24 Hybrid gas injector

Publications (3)

Publication Number Publication Date
JP2013506300A JP2013506300A (ja) 2013-02-21
JP2013506300A5 JP2013506300A5 (https=) 2013-11-14
JP5802672B2 true JP5802672B2 (ja) 2015-10-28

Family

ID=43796508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012531072A Active JP5802672B2 (ja) 2009-09-25 2010-09-24 ハイブリッドガスインジェクタ

Country Status (6)

Country Link
US (1) US20110232568A1 (https=)
EP (1) EP2481082B1 (https=)
JP (1) JP5802672B2 (https=)
KR (1) KR20120085745A (https=)
CN (1) CN102656666B (https=)
WO (1) WO2011038242A2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104254636B (zh) * 2012-04-27 2017-07-25 阿科玛股份有限公司 用于金属氧化物蒸气涂覆玻璃容器的通风橱
JP6176732B2 (ja) * 2014-03-20 2017-08-09 株式会社日立国際電気 ガス供給部、基板処理装置及び半導体装置の製造方法
US20170167023A1 (en) * 2015-12-09 2017-06-15 Lam Research Corporation Silicon or silicon carbide gas injector for substrate processing systems
AT518081B1 (de) * 2015-12-22 2017-07-15 Sico Tech Gmbh Injektor aus Silizium für die Halbleiterindustrie
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR20230026148A (ko) * 2021-08-17 2023-02-24 삼성전자주식회사 기판 처리 장치 및 이를 이용한 반도체 소자 제조 방법
CN115386861B (zh) * 2022-10-27 2023-04-07 盛吉盛(宁波)半导体科技有限公司 一种化学气相沉积设备的导气管及其制备方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3761114A (en) * 1971-08-30 1973-09-25 Victaulic Co Ltd Pipe to flange couplings
US3942141A (en) * 1972-05-26 1976-03-02 Licentia Patent-Verwaltungs-G.M.B.H. Flange
FR2490246A1 (fr) * 1980-09-17 1982-03-19 Cit Alcatel Dispositif de deposition chimique activee sous plasma
US4448448A (en) * 1982-03-22 1984-05-15 Raphael Theresa Pollia Coupling system
JPH0719143Y2 (ja) * 1990-04-26 1995-05-01 日本エー・エス・エム株式会社 ガス導入装置を有するｃｖｄ装置
JPH04280420A (ja) * 1991-03-07 1992-10-06 Toshiba Corp 熱処理装置
US5318633A (en) * 1991-03-07 1994-06-07 Tokyo Electron Sagami Limited Heat treating apparatus
JPH05243161A (ja) * 1992-01-29 1993-09-21 Nec Corp 気相成長装置及びエピタキシャル膜の成長方法
US5441570A (en) * 1993-06-22 1995-08-15 Jein Technics Co., Ltd. Apparatus for low pressure chemical vapor deposition
US5578132A (en) * 1993-07-07 1996-11-26 Tokyo Electron Kabushiki Kaisha Apparatus for heat treating semiconductors at normal pressure and low pressure
JPH09260298A (ja) * 1996-03-18 1997-10-03 Kokusai Electric Co Ltd 半導体製造装置の反応ガス導入ノズル支持構造
JPH10284426A (ja) * 1997-04-10 1998-10-23 Kokusai Electric Co Ltd ノズル
JP2001230212A (ja) * 2000-02-16 2001-08-24 Tokyo Electron Ltd 縦型熱処理装置
JP2001267255A (ja) * 2000-03-21 2001-09-28 Nec Corp 気相成長装置及び気相成長方法
JP2001351871A (ja) * 2000-06-09 2001-12-21 Asm Japan Kk 半導体製造装置
US6450346B1 (en) 2000-06-30 2002-09-17 Integrated Materials, Inc. Silicon fixtures for supporting wafers during thermal processing
US6455395B1 (en) * 2000-06-30 2002-09-24 Integrated Materials, Inc. Method of fabricating silicon structures including fixtures for supporting wafers
JP3572247B2 (ja) * 2000-10-06 2004-09-29 東芝セラミックス株式会社 半導体熱処理炉用ガス導入管
JP2002334868A (ja) * 2001-05-10 2002-11-22 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US20020170487A1 (en) * 2001-05-18 2002-11-21 Raanan Zehavi Pre-coated silicon fixtures used in a high temperature process
US7083694B2 (en) * 2003-04-23 2006-08-01 Integrated Materials, Inc. Adhesive of a silicon and silica composite particularly useful for joining silicon parts
US6830449B1 (en) * 2004-02-02 2004-12-14 Sis Microelectronics Corporation Injector robot for replacing a gas injector in a furnace
JP2006080256A (ja) * 2004-09-09 2006-03-23 Hitachi Kokusai Electric Inc 基板処理装置
JP4815352B2 (ja) * 2004-09-16 2011-11-16 株式会社日立国際電気 熱処理装置、基板の製造方法、基板処理方法、及び半導体装置の製造方法
US20060185589A1 (en) * 2005-02-23 2006-08-24 Raanan Zehavi Silicon gas injector and method of making
US7972703B2 (en) * 2005-03-03 2011-07-05 Ferrotec (Usa) Corporation Baffle wafers and randomly oriented polycrystalline silicon used therefor
US7910494B2 (en) * 2006-03-29 2011-03-22 Tokyo Electron Limited Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto
US8070880B2 (en) * 2007-10-22 2011-12-06 Hitachi Kokusai Electric, Inc. Substrate processing apparatus
JP5237133B2 (ja) * 2008-02-20 2013-07-17 株式会社日立国際電気 基板処理装置

Also Published As

Publication number Publication date
CN102656666A (zh) 2012-09-05
JP2013506300A (ja) 2013-02-21
EP2481082A2 (en) 2012-08-01
US20110232568A1 (en) 2011-09-29
CN102656666B (zh) 2015-06-24
EP2481082B1 (en) 2017-06-21
KR20120085745A (ko) 2012-08-01
WO2011038242A3 (en) 2011-06-16
EP2481082A4 (en) 2013-07-10
WO2011038242A2 (en) 2011-03-31

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