JP5800662B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP5800662B2
JP5800662B2 JP2011223300A JP2011223300A JP5800662B2 JP 5800662 B2 JP5800662 B2 JP 5800662B2 JP 2011223300 A JP2011223300 A JP 2011223300A JP 2011223300 A JP2011223300 A JP 2011223300A JP 5800662 B2 JP5800662 B2 JP 5800662B2
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JP
Japan
Prior art keywords
microlens
shape
monitor
semiconductor device
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011223300A
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English (en)
Japanese (ja)
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JP2013084743A5 (https=
JP2013084743A (ja
Inventor
光裕 世森
光裕 世森
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Canon Inc
Original Assignee
Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011223300A priority Critical patent/JP5800662B2/ja
Priority to US13/611,375 priority patent/US9276028B2/en
Publication of JP2013084743A publication Critical patent/JP2013084743A/ja
Publication of JP2013084743A5 publication Critical patent/JP2013084743A5/ja
Application granted granted Critical
Publication of JP5800662B2 publication Critical patent/JP5800662B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2011223300A 2011-10-07 2011-10-07 半導体装置及びその製造方法 Expired - Fee Related JP5800662B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011223300A JP5800662B2 (ja) 2011-10-07 2011-10-07 半導体装置及びその製造方法
US13/611,375 US9276028B2 (en) 2011-10-07 2012-09-12 Semiconductor device including pixels, microlenses, and a monitoring structure, and a method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011223300A JP5800662B2 (ja) 2011-10-07 2011-10-07 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2013084743A JP2013084743A (ja) 2013-05-09
JP2013084743A5 JP2013084743A5 (https=) 2014-11-20
JP5800662B2 true JP5800662B2 (ja) 2015-10-28

Family

ID=48041540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011223300A Expired - Fee Related JP5800662B2 (ja) 2011-10-07 2011-10-07 半導体装置及びその製造方法

Country Status (2)

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US (1) US9276028B2 (https=)
JP (1) JP5800662B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2014112002A1 (ja) * 2013-01-15 2017-01-19 オリンパス株式会社 撮像素子、及び撮像装置
US20150064629A1 (en) * 2013-08-27 2015-03-05 Visera Technologies Company Limited Manufacturing method for microlenses
US10249661B2 (en) * 2014-08-22 2019-04-02 Visera Technologies Company Limited Imaging devices with dummy patterns
JP6927098B2 (ja) * 2018-03-13 2021-08-25 日本電信電話株式会社 レンズ集積受光素子及びその検査方法
US20190339422A1 (en) * 2018-05-03 2019-11-07 Visera Technologies Company Limited Method for forming micro-lens array and photomask therefor
TW202243239A (zh) * 2021-01-08 2022-11-01 日商索尼集團公司 顯示裝置及電子機器
WO2025249180A1 (ja) * 2024-05-30 2025-12-04 ソニーセミコンダクタソリューションズ株式会社 表示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100628231B1 (ko) * 2004-12-30 2006-09-26 동부일렉트로닉스 주식회사 사각 마이크로렌즈를 갖는 이미지 센서 및 그 제조방법
JP2006253464A (ja) * 2005-03-11 2006-09-21 Fuji Photo Film Co Ltd マイクロレンズの製造方法及びこれを用いて製造した固体撮像素子
JP2006351853A (ja) * 2005-06-16 2006-12-28 Fujifilm Holdings Corp 固体撮像素子およびその製造方法
US8003983B2 (en) * 2006-04-19 2011-08-23 United Microelectronics Corp. Wafer for manufacturing image sensors, test key layout for defects inspection, and methods for manufacturing image sensors and for forming test key
US7612319B2 (en) * 2006-06-09 2009-11-03 Aptina Imaging Corporation Method and apparatus providing a microlens for an image sensor
US20110130508A1 (en) * 2009-07-29 2011-06-02 Alan David Pendley Topside optical adhesive for micro-optical film embedded into paper during the papermaking process

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Publication number Publication date
US20130087874A1 (en) 2013-04-11
US9276028B2 (en) 2016-03-01
JP2013084743A (ja) 2013-05-09

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