US20190339422A1 - Method for forming micro-lens array and photomask therefor - Google Patents

Method for forming micro-lens array and photomask therefor Download PDF

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Publication number
US20190339422A1
US20190339422A1 US15/970,054 US201815970054A US2019339422A1 US 20190339422 A1 US20190339422 A1 US 20190339422A1 US 201815970054 A US201815970054 A US 201815970054A US 2019339422 A1 US2019339422 A1 US 2019339422A1
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Prior art keywords
segment
pattern
area
micro
lens
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Abandoned
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US15/970,054
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Jyun-You LU
Hsin-Yen Tsai
Hao-Min CHEN
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VisEra Technologies Co Ltd
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VisEra Technologies Co Ltd
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Priority to US15/970,054 priority Critical patent/US20190339422A1/en
Assigned to VISERA TECHNOLOGIES COMPANY LIMITED reassignment VISERA TECHNOLOGIES COMPANY LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LU, JYUN-YOU, TSAI, HSIN-YEN, CHEN, Hao-min
Priority to JP2018150315A priority patent/JP6634125B2/en
Priority to TW107138734A priority patent/TWI691003B/en
Priority to CN201811407906.XA priority patent/CN110456429A/en
Publication of US20190339422A1 publication Critical patent/US20190339422A1/en
Priority to US17/228,031 priority patent/US20210231840A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding

Definitions

  • the invention relates to a method for forming a micro-lens array, and more particularly to a method for forming micro-lenses with multi-heights by performing a single lithography process.
  • Image sensors are devices capable of recoding an image of an object by converting a photo signal, which is received from the object, to an electronic signal.
  • image sensors can be categorized into complementary metal oxide semiconductor (CMOS) devices and charge coupled devices (CCDs).
  • CMOS complementary metal oxide semiconductor
  • CCDs charge coupled devices
  • a typical image sensor includes a lens array composed of a plurality of lenses. In general, each lens corresponds to one pixel unit, and the heights of the lenses are the same. However, in some cases where at least one of the lenses corresponds to more than one pixel unit, the height of the large lens may be smaller than the heights of the other lenses due to some limitations of the current manufacture processes, which results in worse conversion efficiency of the corresponding pixel units.
  • An exemplary embodiment of a method for forming a micro-lens array comprises the steps of forming a hard-mask layer; performing a lithography process on the hard-mask layer by a photomask to form a first pattern and a second pattern; and reflowing the first pattern and the second pattern to form a first lens structure and a second lens structure respectively.
  • the photomask comprises a first pattern segment and a second pattern segment, and the second pattern segment comprises a transparent region and an opaque region. An area of the transparent region of the second pattern segment is larger than 18% of an area of the second pattern segment.
  • the photomask comprises a first pattern segment and a second pattern segment.
  • the second pattern segment comprises a transparent region and an opaque region.
  • An area of the transparent region of the second pattern segment is larger than 18% of an area of the second pattern segment.
  • FIG. 1 shows one exemplary embodiment of a cross section of an image sensor
  • FIG. 2 shows another exemplary embodiment of a cross section of an image sensor
  • FIGS. 3A-3F show an exemplary embodiment of a manufacture process of the image sensor of FIG. 1 ;
  • FIG. 4 shows an exemplary embodiment of a top view of a photomask for the image sensor of FIG. 1 ;
  • FIG. 5 shows an exemplary embodiment of a top view of a larger segment of the photomask shown in FIG. 4 ;
  • FIGS. 6A-6G show various exemplary embodiments of top views of smaller segments of the photomask shown in FIG. 4 ;
  • FIG. 7 shows another exemplary embodiment of a cross section of an image sensor
  • FIG. 8 shows an exemplary embodiment of a top view of a photomask for the image sensor of FIG. 7 .
  • FIG. 1 shows an exemplary embodiment of a cross section of an image sensor.
  • an image sensor 1 comprises a plurality of micro-lenses which are arranged in rows and columns to form a micro-lens array 13 .
  • FIG. 1 shows two micro lenses 130 and a micro-lens 131 for the side view. The number of micro-lenses in the micro-lens array 13 is determined according to the design requirements.
  • a substrate 10 is provided.
  • a plurality of photo-sensors are formed in the substrate 10 and arranged in rows and columns to form a photo-sensor array 11 .
  • four photo-sensors 110 - 113 are shown.
  • a filter layer 12 is formed on the substrate 10 .
  • the filter layer 12 comprises filters, and one filter corresponds to one photo-sensor.
  • the filters of the filter layer 12 may be color filters, such as red filters, green filters, and blue filters for the primary color system, or cyan filters, yellow filters, and magenta filters for the complementary color system.
  • FIG. 1 shows four color filters 120 - 123 .
  • the color filters 120 - 123 are the filters for at least two different colors or for a specific color.
  • a pixel unit is defined by a set of one photo-sensor and one filter, and the image sensor 1 is divided into several pixel regions by using the pixel unit.
  • the substrate 10 is divided into four equal pixel regions 101 - 103 by using the pixel unit, and the photo-sensors 110 - 113 are formed in the regions 100 - 103 of the substrate 10 respectively.
  • the micro-lenses 130 and 131 arranged in the micro-lens array 13 are formed on the filter layer 12 .
  • each of the micro-lenses 130 corresponds to one pixel unit (1 ⁇ 1)
  • the micro-lens 131 corresponds to two pixel units (1 ⁇ 2).
  • the left micro-lens 130 corresponds to the filter 120 and the photo-sensor 110
  • the right micro-lens 130 corresponds to the filter 123 and the photo-sensor 113
  • the micro-lens 131 corresponds to the filters 121 and 122 and the photo-sensors 111 and 112 .
  • the area of the micro-lens 131 is larger than the area of each micro-lens 130 .
  • the height H 11 of the micro-lens 131 is larger than the height H 10 of each of the micro-lenses 130 . Due to the different heights of the micro-lenses 130 and 131 , the focal length of the micro-lens 131 is larger is than the focal lengths of the micro-lenses 130 . In another embodiment, the height of the micro-lens 131 is equal to the height of each of the micro-lenses 130 as shown in FIG. 2 , so that the focal lengths of the micro-lenses 130 and 131 are the same.
  • FIG. 3A shows a cross section of the image sensor 1 without the micro-lenses 130 and 131 .
  • the substrate 10 is provided.
  • the photo-sensor array 11 is formed in the substrate 10
  • the filter layer 12 is formed on the substrate 10 .
  • an under layer 30 is formed on the filter layer 12 .
  • the under layer 30 is made of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, another suitable material, or a combination thereof.
  • the under layer 30 has a multi-layer structure.
  • a hard-mask layer 31 is formed on the under 30.
  • the hard-mask layer 31 has a positive photoresist.
  • FIG. 3D a lithography process is processed on the hard-mask layer 31 by using a photomask 32 .
  • the hard-mask layer 31 is exposed to light 300 through the photomask 32 to form a hard-mask layer 31 ′ which comprises exposed portions 310 and unexposed portions 311 and 312 .
  • FIG. 4 shows a top view of the photomask 32 .
  • the photomask 32 comprises a transparent substrate 43 and a plurality of segments including a plurality of pattern segments 41 and at least one pattern segment 42 to define a transparent region 40 and a plurality of masking regions. Specifically, the masking regions of the photomask 32 are defined by the segments 41 and 42 .
  • the number of segments of the photomask 32 is given as an example. In practice, the number of segments of the photomask 32 is determined according the number of micro-lenses to be formed. In FIG. 4 , the photomask 32 comprising only one segment 42 is given as an example. In the embodiment, the area of the segment 42 is larger than the area of each segment 41 .
  • the regions 310 of the hard-mask layer 31 are exposed to the light 300 through the transparent region 40 .
  • the pattern of each segment of the photomask 32 is projected on a region of the hard-mask layer 31 . For example, the patterns of the segments 41 are projected on the unexposed portions 311 of the hard-mask layer 31 while the pattern of the segment 42 is projected on the unexposed portion 312 of the hard-mask layer 31 .
  • the segment 42 is an opaque segment 50 as shown in FIG. 5
  • each segment 41 comprises at least one opening with a polygonal shape (such as a triangular shape, a rectangular shape, a pentagon, or any closed shape with more than two sides) or a circular shape.
  • FIG. 6A shows one exemplary embodiment of the top view of the segments 41 .
  • At least one of the segments 41 of FIG. 4 has the same layout of the segment 41 A shown in FIG. 6A .
  • the segment 41 A comprises an opening 600 which defines a transparent region 601 A of the segment 41 A.
  • the transparent region 601 A is formed by one single opening 600 .
  • the remaining portion of the segment 41 A excluding the opening 600 , defines an opaque region 601 B of the segment 41 A.
  • the area of the transparent region 601 A is larger than 18% of the area of the segment 41 A.
  • the area of the opening 600 is larger than 18% of the area of the segment 41 A.
  • the area of the transparent region 601 A is larger than 18% of the area of the segment 41 A and smaller than 50% of the area of the segment 41 A.
  • the shape of the segment 41 A is square (rectangular shape), and the shape of the opening 600 is also square.
  • the shape of the transparent region 601 A formed by the opening 600 is also square.
  • the center point of the segment 41 A and the center point of the opening 600 are at the same position.
  • the four sides of the opening 600 are parallel with the four sides of the segment 41 A.
  • the pixel unit is equal to 1.0 um (micro meter)
  • the side length (b 600 ) of the opening 600 is designed to be larger than 0.42 times the side length (a) of the segment 41 A (b 600 >0.42*a)
  • the area of the transparent region 601 A is larger than 18% of the area of the segment 41 A.
  • the side length (b 600 ) of the opening 600 has to be larger than 0.3 um (b>0.3 um).
  • FIG. 6B shows another exemplary embodiment of the top view of the segments 41 .
  • At least one of the segments 41 of FIG. 4 has the same layout of the segment 41 B shown in FIG. 6B .
  • the segment 41 B comprises an opening 602 which defines as a transparent region 603 A of the segment 41 B.
  • the transparent region 603 A is formed by one single opening 602 .
  • the remaining portion of the segment 41 B, excluding the opening 602 defines as an opaque region 603 B of the segment 41 B.
  • the area of the transparent region 603 A is larger than 18% of the area of the segment 41 B. In other words, the area of the opening 602 is larger than 18% of the area of the segment 41 B.
  • the area of the transparent region 603 A is larger than 18% of the area of the segment 41 B and smaller than 50% of the area of the segment 413 B.
  • the shape of the segment 41 B is square, and the shape of the opening 602 is also square.
  • the shape of the transparent region 603 A formed by the opening 602 is also square.
  • the center point of the segment 41 B and the center point of the opening 602 are at the same position.
  • One diagonal line of the opening 602 is parallel with one pair of opposite sides of the segment 41 B, and the other diagonal line of the opening 602 is parallel with the other pair of opposite sides of the segment 41 B.
  • the pixel unit is equal to 1.0 um
  • the length (b 602 ) of each diagonal line of the opening 602 is designed to be larger than 0.6 times the side length (a) of the segment 41 A (b 602 >0.6*a)
  • the area of the transparent region 603 A is larger than 18% of the area of the segment 41 B.
  • FIG. 6C shows another exemplary embodiment of the top view of the segments 41 .
  • At least one of the segments 41 of FIG. 4 has the same layout of the segment 41 C shown in FIG. 6C .
  • the segment 41 C comprises an opening 604 which defines as a transparent region 605 A of the segment 41 B.
  • the transparent region 605 A is formed by one single opening 604 .
  • the remaining portion of the segment 41 C, excluding the opening 604 defines as an opaque region 605 B of the segment 41 C.
  • the area of the transparent region 605 A is larger than 18% of the area of the segment 41 C. In other words, the area of the opening 604 is larger than 18% of the area of the segment 41 C.
  • the area of the transparent region 605 A is larger than 18% of the area of the segment 41 C and smaller than 50% of the area of the segment 41 C.
  • the shape of the segment 41 C is square, while the shape of the opening 604 is circular.
  • the shape of the transparent region 605 A formed by the opening 604 is also circular.
  • the center point of the segment 41 C and the center point of the opening 604 are at the same position.
  • the pixel unit is equal to 1.0 um, when the length (b 604 ) of the diameter of the opening 604 is designed to be larger than 0.48 times the side length (a) of the segment 41 C (b 604 >0.48*a), the area of the transparent region 605 A is larger than 18% of the area of the segment 41 C.
  • FIG. 6D shows another exemplary embodiment of the top view of the segments 41 .
  • At least one of the segments 41 of FIG. 4 has the same layout of the segment 41 D shown in FIG. 61 ).
  • the segment 41 D comprises more than one opening, which define a transparent region 607 A of the segment 41 D.
  • four openings 606 A- 606 D are given as an example.
  • the area of the transparent region 607 A is equal to the sum of the areas of the openings 606 A- 606 D.
  • the remaining portion of the segment 41 D, excluding the openings 606 A- 606 D defines an opaque region 607 B of the segment 41 D.
  • the area of the transparent region 607 A is larger than 18% of the area of the segment 41 D.
  • the total area of the openings 606 A- 606 D is larger than 18% of the area of the segment 41 D.
  • the area of the transparent region 607 A is larger than 18% of the area of the segment 41 D and smaller than 50% of the area of the segment 41 D.
  • the shape of the segment 41 D is square, and the shape of each of the openings 606 A- 606 D is also square. The openings 606 A- 606 D are spaced apart from each other. As shown in FIG.
  • the openings 606 A- 6061 are disposed near the center point of the segment 41 D and symmetrically based on the center point of the segment 41 D.
  • the four sides of each of the openings 606 A- 606 D are parallel with the four sides of the segment 41 D.
  • the pixel unit is equal to 1.0 um
  • the side length (b 606 ) of each of the openings 606 A- 606 D) is designed to be larger than 0.21 times the side length (a) of the segment 41 D (b 606 >0.21*a)
  • the area of the transparent region 607 A is larger than 18% of the area of the segment 41 D.
  • the openings 606 A- 606 D are disposed near the center point of the segment 41 D. In another embodiment, the openings may be disposed in the corners of the segment 41 D, as shown in FIG. 6E .
  • FIG. 6E shows another exemplary embodiment of the top view of the segments 41 . At least one of the segments 41 of FIG. 4 has the same layout of the segment 41 E shown in FIG. 6E .
  • the segment 41 E comprises more than one opening, which define a transparent region 609 A of the segment 41 E.
  • four openings 608 A- 608 D are given as an example.
  • the area of the transparent region 609 A is equal to the sum of the areas of the openings 608 A- 608 D.
  • the remaining portion of the segment 41 E excluding the openings 608 A- 608 D, defines an opaque region 609 B of the segment 41 E.
  • the area of the transparent region 609 A is larger than 18% of the area of the segment 41 E.
  • the total area of the openings 608 A- 608 D is larger than 18% of the area of the segment 41 E.
  • the area of the transparent region 609 A is larger than 18% of the area of the segment 41 E and smaller than 50% of the area of the segment 41 E.
  • the shape of the segment 41 E is square, and the shape of each of the openings 608 A- 608 D is also square.
  • the openings 608 A- 608 D are spaced apart from each other.
  • the segment 41 E comprises four corners 610 A- 610 D.
  • the openings 608 A- 608 D are disposed in the corners 610 A- 610 D respectively.
  • the four sides of each of the openings 608 A- 608 D are parallel with the four sides of the segment 41 E.
  • the pixel unit is equal to 1.0 um, when the side length (b 608 ) of each of the openings 608 A- 608 D is designed to be larger than 0.21 times the side length (a) of the segment 41 E (b 608 >0.21*a), the area of the transparent region 609 A is larger than 18% of the area of the segment 41 E.
  • the shapes of the openings 608 A- 608 D are square. In another embodiment, the shapes of the openings may be triangular, as shown in FIG. 6F .
  • FIG. 6F shows another exemplary embodiment of the top view of the segments 41 . At least one of the segments 41 of FIG. 4 has the same layout of the segment 41 F shown in FIG. 6F .
  • the segment 41 F comprises more than one opening, which define a transparent region 612 A of the segment 41 F.
  • four openings 611 A- 611 D are given as an example.
  • the area of the transparent region 612 A is equal to the sum of the areas of the openings 611 A- 611 D.
  • the remaining portion of the segment 41 F defines an opaque region 6012 B of the segment 41 F.
  • the area of the transparent region 612 A is larger than 18% of the area of the segment 41 F.
  • the total area of the openings 611 A- 611 is larger than 18% of the area of the segment 41 F.
  • the area of the transparent region 612 A is larger than 18% of the area of the segment 41 F and smaller than 50% of the area of the segment 41 F.
  • the shape of the segment 41 F is square, while the shape of each of the openings 611 A- 611 D is triangular. Specifically, the shape of each of the openings 611 A- 611 D is an isosceles triangle.
  • the openings 611 A- 611 D are spaced apart from each other. Due to the square shape, the segment 41 F comprises four corners 613 A- 613 D. The openings 611 A- 611 D are disposed in the corners 613 A- 613 D respectively. For each of the openings 611 A- 611 D, the two sides of equal length correspond to one pair of adjacent sides of the segment 41 F respectively. In an embodiment where the pixel unit is equal to 1.0 um, when the side length (b 611 ) of each of the openings 611 A- 611 D is designed to be larger than 0.30 times the side length (a) of the segment 41 F (b 611 >0.30*a), the area of the transparent region 612 A is larger than 18% of the area of the segment 41 F.
  • FIG. 6G shows another exemplary embodiment of the top view of the segments 41 .
  • At least one of the segments 41 of FIG. 4 is the same as the segment 41 G shown in FIG. 6G .
  • the segment 41 G comprises a plurality of openings which are spaced apart from each other and disposed on the center area of the segment 41 G.
  • nine openings 614 are given as an example.
  • the nine openings 614 and the space between the openings 614 define a transparent region 615 A of the segment 41 G.
  • the area of the transparent region 615 A is equal to the sum of the areas of the openings 614 and the area of the space between the openings 64 .
  • the remaining portion of the segment 41 G defines an opaque region 615 B of the segment 41 G.
  • the shape of the segment 41 E is square, and the shape of the transparent region 615 A is also square.
  • the shape of each of the openings 614 is square.
  • the four sides of each of the openings 614 are parallel with the four sides of the segment 41 G.
  • the area of the transparent region 615 A is larger than 18?% of the area of the segment 41 G.
  • the area of the transparent region 615 A is larger than 18% of the area of the segment 41 G and smaller than 50% of the area of the segment 41 G.
  • the pixel unit is larger than 5.00 um
  • the side length (b 615 ) of the transparent region 615 A is designed to be larger than 0.42 times the side length (a) of the segment 41 G (b 615 >0.42*a)
  • the area of the transparent region 615 A is larger than 18% of the area of the segment 41 G.
  • the transparent region 615 A is defined by nine openings 614 and the space between the openings 614 .
  • the side length (b 615 ) of the transparent region 615 A is larger than 0.42 times the side length (a) of the segment 41 G (b 615 >0.42*a)
  • the relationship between the side length (b 614 ) and the side length (b 615 a ) and the relationship between the distance (b 616 ) and the side length (b 615 a ) are taken as an example for illustration. In other embodiments, the relationship between the side length (b 614 ) and the side length (b 615 a ) and the relationship between the distance (b 616 ) and the side length (b 615 a ) are determined according to the number of openings in the transparent region 615 A and the arrangement of the openings in the transparent region 615 A. According to the embodiments of FIGS. 6D-6G , the transparent region 607 A/ 609 A/ 612 A/ 615 A of the segment 41 D/ 41 E/ 41 F/ 41 G is formed by several openings.
  • each segment 41 comprises at least one opening, while the segment 42 is opaque.
  • transmittance of each segment 41 is larger than the transmittance of the segment 42 .
  • the transmittance of the left segment 41 shown in FIG. 3D is equal to the transmittance of the right segment 41 shown in FIG. 3D .
  • the height H 311 of each pattern 311 ′ is smaller than the height H 312 of the pattern 312 ′ (H 311 ⁇ H 312 ); that is, the height H 312 of the pattern 312 ′ is larger than the height H 311 of each pattern 311 ′ (H 312 >H 311 ).
  • the patterns 311 and the pattern 312 are reflowed through a thermal process to form lens structures 313 and a lens structure 314 respectively.
  • the height H 312 of the pattern 312 ′ is larger than the height H 311 of each pattern 311 ′ (H 312 >H 311 ).
  • the height H 314 of the lens structure 314 is larger than the height H 313 of each lens structure 313 (H 314 >H 313 ).
  • the under layer 30 is etched by using the lens structures 313 and the lens structure 314 as an etching mask to form the micro-lenses 130 and the micro-lens 131 respectively, as shown in FIG. 1 , as described above, the height H 314 of the lens structure 314 is larger than the height H 313 of each lens structure 313 (H 314 >H 313 ).
  • the height H 11 of the micro-lens 131 is larger than the height H 110 of each micro-lens 130 .
  • each segment 41 comprises at least one opening, while the segment 42 is opaque. Accordingly, the micro-lenses with multi-heights can be formed by using the photomask 32 comprising the pattern segments 40 and 41 during the lithography process. Specifically, the height of the micro-lens corresponding to two pixel units is larger than the heights of other micro-lenses.
  • the micro-lens 131 corresponds to two pixel units, while each of the micro-lenses 130 corresponds to one pixel unit.
  • each micro-lens corresponds to the same number of pixel units.
  • each micro-lens corresponds to one or two pixel units.
  • the micro-lenses may have different heights, and the height of each micro-lens is determined according to the type of the corresponding filter.
  • an image sensor 7 comprises a plurality of micro-lenses which are arranged in rows and columns to form a micro-lens array 73 .
  • FIG. 7 shows micro lenses 730 - 732 for the side view.
  • the number of micro-lenses in the micro-lens array 73 is determined according to the design requirements.
  • a substrate 70 is provided, and a plurality of photo-sensors are formed in the substrate 70 and arranged in rows and columns to form a photo-sensor array 71 .
  • three photo-sensors 710 - 712 are shown for the cross section.
  • a filter layer 72 is formed on the substrate 70 .
  • the filter layer 72 comprises filters, and one filter corresponds to one photo-sensor.
  • the filters of the filter layer 72 are color filters, such as red filters, green filters, and blue filters for the primary color system, or cyan filters, yellow filters, and magenta filters for the complementary color system.
  • the filter layer 72 comprises red filters, green filters, and blue filters for the primary color system is given as an example.
  • FIG. 7 shows a green filter 720 G, a red filter 721 R, and a blue filter 722 B.
  • a pixel unit is defined by a set of one photo-sensor and one filter, and the image sensor 7 is divided into several pixel regions by using the pixel unit.
  • the substrate 70 is divided into three equal pixel regions 700 - 702 by using the pixel unit.
  • the micro-lenses 730 - 732 arranged in the micro-lens array 73 are formed on the filter layer 72 . As shown in FIG. 7 , each of the micro-lenses 730 - 732 corresponds to one pixel unit.
  • the micro-lens 730 corresponds to the green filter 720 G and the photo-sensor 710
  • the micro-lens 731 corresponds to the red filter 721 R and the photo-sensor 711
  • the micro-lens 730 corresponds to the blue filter 722 B and the photo-sensor 712 .
  • the height H 731 of the micro-lens 731 corresponding to the red filter 721 R is larger than the height H 730 of the micro-lens 730 corresponding to the green filter 720 G
  • the height H 730 of the micro-lens 730 is larger than the height H 732 of the micro-lens 732 corresponding to the blue filter 722 G (H 731 >H 730 >H 732 ).
  • the focal length of the micro-lens 731 is larger than the focal length of the micro-lens 730
  • the focal length of the micro-lens 730 is larger than the focal length of the micro-lens 732 .
  • the manufacture process of the image sensor 7 is similar to the manufacture process of the image sensor 1 shown in FIGS. 3A-3F .
  • the photomask used in the lithography process for forming the micro-lenses 730 - 732 is different from the photomask 32 used in the lithography process for forming the micro-lenses 130 and 131 .
  • the photomask 8 used in the lithography process for the image sensor 7 comprises a transparent substrate 80 and a plurality of pattern segments 81 .
  • the number of segments of the photomask 80 is given as an example. In practice, the number of segments of the photomask 80 is determined according the number of micro-lenses to be formed.
  • the areas of the segments 81 are the same, in other words, the area of the segment for the micro-lens 731 is equal to the area of the segment for each of the micro-lenses 730 and 732 .
  • Each segment 81 is used to form one micro-lens through the lithography process, the reflowing step, and the etching step. In the embodiment of FIG. 8 , each segment 81 has one of the layouts shown in FIGS. 6A-6G .
  • the transmittance of at least one segment 81 is different from the transmittances of the other segments 81 so that the height of at least one micro-lens is different from the heights of the other micro-lenses.
  • the height H 731 of the micro-lens 731 corresponding to the red filter 721 R is larger than the height H 730 of the micro-lens 730 corresponding to the green filter 720 G
  • the height H 730 of the micro-lens 730 corresponding to the green filter 720 G is larger than the height H 732 of the micro-lens 732 corresponding to the green filter 722 B (H 731 >H 730 >H 732 ).
  • the segments 81 for the micro-lens 730 - 732 may have the same layout (such as one of the layouts shown in FIGS. 6A-6G ) or different layouts (such as three different layouts among the layouts shown in FIGS. 6A-6G ).
  • the segment 81 for the micro-lens 732 with the smallest height can be an opaque segment as shown in FIG. 5 .
  • each segment 41 comprises more than one opening, such as the segments 41 D, 41 E, and 41 F, four openings are given as an example for each segment 41 .
  • openings with odd number can be formed for each segment 41 .

Abstract

A method for forming a micro-lens array is provided. According to the method, a substrate is provided, and a hard-mask layer is formed. A lithography process is performed on the hard-mask layer by a hard-mask to form a first pattern and a second pattern. Then, the first pattern and the second pattern are reflowed to form a first lens structure and a second lens structure respectively. The photomask includes a first pattern segment and a second pattern segment, and the second pattern segment includes a transparent region and an opaque region. An area of the transparent region of the second pattern segment is larger than 18% of an area of the second pattern segment.

Description

    BACKGROUND OF THE INVENTION Field of the Invention
  • The invention relates to a method for forming a micro-lens array, and more particularly to a method for forming micro-lenses with multi-heights by performing a single lithography process.
    • Description of the Related Art
  • Image sensors are devices capable of recoding an image of an object by converting a photo signal, which is received from the object, to an electronic signal. Currently, image sensors can be categorized into complementary metal oxide semiconductor (CMOS) devices and charge coupled devices (CCDs). A typical image sensor includes a lens array composed of a plurality of lenses. In general, each lens corresponds to one pixel unit, and the heights of the lenses are the same. However, in some cases where at least one of the lenses corresponds to more than one pixel unit, the height of the large lens may be smaller than the heights of the other lenses due to some limitations of the current manufacture processes, which results in worse conversion efficiency of the corresponding pixel units.
    • BRIEF SUMMARY OF THE INVENTION
  • An exemplary embodiment of a method for forming a micro-lens array is provided. The method comprises the steps of forming a hard-mask layer; performing a lithography process on the hard-mask layer by a photomask to form a first pattern and a second pattern; and reflowing the first pattern and the second pattern to form a first lens structure and a second lens structure respectively. The photomask comprises a first pattern segment and a second pattern segment, and the second pattern segment comprises a transparent region and an opaque region. An area of the transparent region of the second pattern segment is larger than 18% of an area of the second pattern segment.
  • In an exemplary embodiment, the photomask comprises a first pattern segment and a second pattern segment. The second pattern segment comprises a transparent region and an opaque region. An area of the transparent region of the second pattern segment is larger than 18% of an area of the second pattern segment.
  • A detailed description is given in the following embodiments with reference to the accompanying drawings.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The invention can be more fully understood by referring to the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
  • FIG. 1 shows one exemplary embodiment of a cross section of an image sensor;
  • FIG. 2 shows another exemplary embodiment of a cross section of an image sensor;
  • FIGS. 3A-3F show an exemplary embodiment of a manufacture process of the image sensor of FIG. 1;
  • FIG. 4 shows an exemplary embodiment of a top view of a photomask for the image sensor of FIG. 1;
  • FIG. 5 shows an exemplary embodiment of a top view of a larger segment of the photomask shown in FIG. 4;
  • FIGS. 6A-6G show various exemplary embodiments of top views of smaller segments of the photomask shown in FIG. 4;
  • FIG. 7 shows another exemplary embodiment of a cross section of an image sensor; and
  • FIG. 8 shows an exemplary embodiment of a top view of a photomask for the image sensor of FIG. 7.
    •  DETAILED DESCRIPTION OF THE INVENTION
  • The following description is of the best-contemplated mode of carrying out the invention. This description is made for the purpose of illustrating the general principles of the invention and should not be taken in a limiting sense. The scope of the invention is best determined by reference to the appended claims.
  • FIG. 1 shows an exemplary embodiment of a cross section of an image sensor. Referring to FIG. 1, an image sensor 1 comprises a plurality of micro-lenses which are arranged in rows and columns to form a micro-lens array 13. For clear illustration, FIG. 1 shows two micro lenses 130 and a micro-lens 131 for the side view. The number of micro-lenses in the micro-lens array 13 is determined according to the design requirements. As shown in FIG. 1, a substrate 10 is provided. A plurality of photo-sensors are formed in the substrate 10 and arranged in rows and columns to form a photo-sensor array 11. In FIG. 1, four photo-sensors 110-113 are shown. A filter layer 12 is formed on the substrate 10. The filter layer 12 comprises filters, and one filter corresponds to one photo-sensor. The filters of the filter layer 12 may be color filters, such as red filters, green filters, and blue filters for the primary color system, or cyan filters, yellow filters, and magenta filters for the complementary color system. For clear illustration, FIG. 1 shows four color filters 120-123. The color filters 120-123 are the filters for at least two different colors or for a specific color. In the embodiment, a pixel unit is defined by a set of one photo-sensor and one filter, and the image sensor 1 is divided into several pixel regions by using the pixel unit. As shown in FIG. 1, the substrate 10 is divided into four equal pixel regions 101-103 by using the pixel unit, and the photo-sensors 110-113 are formed in the regions 100-103 of the substrate 10 respectively.
  • The micro-lenses 130 and 131 arranged in the micro-lens array 13 are formed on the filter layer 12. As shown in FIG. 1, each of the micro-lenses 130 corresponds to one pixel unit (1×1), while the micro-lens 131 corresponds to two pixel units (1×2). In detail, the left micro-lens 130 corresponds to the filter 120 and the photo-sensor 110, the right micro-lens 130 corresponds to the filter 123 and the photo-sensor 113, and the micro-lens 131 corresponds to the filters 121 and 122 and the photo- sensors 111 and 112. Thus, the area of the micro-lens 131 is larger than the area of each micro-lens 130. Through a manufacture process of the image sensor 1 provided by an embodiment of the present invention, the height H11 of the micro-lens 131 is larger than the height H10 of each of the micro-lenses 130. Due to the different heights of the micro-lenses 130 and 131, the focal length of the micro-lens 131 is larger is than the focal lengths of the micro-lenses 130. In another embodiment, the height of the micro-lens 131 is equal to the height of each of the micro-lenses 130 as shown in FIG. 2, so that the focal lengths of the micro-lenses 130 and 131 are the same.
  • An exemplary embodiment of the manufacture process of the image sensor 1 is described with reference to FIGS. 3A-3F. In the embodiment, the multi-height micro-lenses 130 and 131 are given as an example for illustration. FIG. 3A shows a cross section of the image sensor 1 without the micro-lenses 130 and 131. As shown in FIG. 3A, the substrate 10 is provided. The photo-sensor array 11 is formed in the substrate 10, and the filter layer 12 is formed on the substrate 10. Then, referring to FIG. 3B, an under layer 30 is formed on the filter layer 12. In some embodiments, the under layer 30 is made of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, another suitable material, or a combination thereof. In some embodiments, the under layer 30 has a multi-layer structure. Referring to FIG. 3C, a hard-mask layer 31 is formed on the under 30. In the embodiment of FIG. 3C, the hard-mask layer 31 has a positive photoresist.
  • Then, as shown in FIG. 3D, a lithography process is processed on the hard-mask layer 31 by using a photomask 32. The hard-mask layer 31 is exposed to light 300 through the photomask 32 to form a hard-mask layer 31′ which comprises exposed portions 310 and unexposed portions 311 and 312. FIG. 4 shows a top view of the photomask 32. Referring to FIG. 4, the photomask 32 comprises a transparent substrate 43 and a plurality of segments including a plurality of pattern segments 41 and at least one pattern segment 42 to define a transparent region 40 and a plurality of masking regions. Specifically, the masking regions of the photomask 32 are defined by the segments 41 and 42. The number of segments of the photomask 32 is given as an example. In practice, the number of segments of the photomask 32 is determined according the number of micro-lenses to be formed. In FIG. 4, the photomask 32 comprising only one segment 42 is given as an example. In the embodiment, the area of the segment 42 is larger than the area of each segment 41. During the lithography process, the regions 310 of the hard-mask layer 31 are exposed to the light 300 through the transparent region 40. The pattern of each segment of the photomask 32 is projected on a region of the hard-mask layer 31. For example, the patterns of the segments 41 are projected on the unexposed portions 311 of the hard-mask layer 31 while the pattern of the segment 42 is projected on the unexposed portion 312 of the hard-mask layer 31.
  • In the embodiment, the segment 42 is an opaque segment 50 as shown in FIG. 5, while each segment 41 comprises at least one opening with a polygonal shape (such as a triangular shape, a rectangular shape, a pentagon, or any closed shape with more than two sides) or a circular shape. FIG. 6A shows one exemplary embodiment of the top view of the segments 41. At least one of the segments 41 of FIG. 4 has the same layout of the segment 41A shown in FIG. 6A. Referring to FIG. 6A, the segment 41A comprises an opening 600 which defines a transparent region 601A of the segment 41A. Thus, the transparent region 601A is formed by one single opening 600. The remaining portion of the segment 41A, excluding the opening 600, defines an opaque region 601B of the segment 41A. The area of the transparent region 601A is larger than 18% of the area of the segment 41A. In other words, the area of the opening 600 is larger than 18% of the area of the segment 41A. According to another embodiment, the area of the transparent region 601A is larger than 18% of the area of the segment 41A and smaller than 50% of the area of the segment 41A. In the embodiment, the shape of the segment 41A is square (rectangular shape), and the shape of the opening 600 is also square. The shape of the transparent region 601A formed by the opening 600 is also square. The center point of the segment 41A and the center point of the opening 600 are at the same position. The four sides of the opening 600 are parallel with the four sides of the segment 41A. In an embodiment where the pixel unit is equal to 1.0 um (micro meter), when the side length (b600) of the opening 600 is designed to be larger than 0.42 times the side length (a) of the segment 41A (b600>0.42*a), the area of the transparent region 601A is larger than 18% of the area of the segment 41A. For example, when the side length (a) of the segment 41A is set to be 0.716 um (a=0.716 um), the side length (b600) of the opening 600 has to be larger than 0.3 um (b>0.3 um).
  • FIG. 6B shows another exemplary embodiment of the top view of the segments 41. At least one of the segments 41 of FIG. 4 has the same layout of the segment 41B shown in FIG. 6B. Referring to FIG. 6B, the segment 41B comprises an opening 602 which defines as a transparent region 603A of the segment 41B. Thus, the transparent region 603A is formed by one single opening 602. The remaining portion of the segment 41B, excluding the opening 602, defines as an opaque region 603B of the segment 41B. The area of the transparent region 603A is larger than 18% of the area of the segment 41B. In other words, the area of the opening 602 is larger than 18% of the area of the segment 41B. According to another embodiment, the area of the transparent region 603A is larger than 18% of the area of the segment 41B and smaller than 50% of the area of the segment 413B. In the embodiment, the shape of the segment 41B is square, and the shape of the opening 602 is also square. The shape of the transparent region 603A formed by the opening 602 is also square. The center point of the segment 41B and the center point of the opening 602 are at the same position. One diagonal line of the opening 602 is parallel with one pair of opposite sides of the segment 41B, and the other diagonal line of the opening 602 is parallel with the other pair of opposite sides of the segment 41B. In the embodiment where the pixel unit is equal to 1.0 um, when the length (b602) of each diagonal line of the opening 602 is designed to be larger than 0.6 times the side length (a) of the segment 41A (b602>0.6*a), the area of the transparent region 603A is larger than 18% of the area of the segment 41B.
  • FIG. 6C shows another exemplary embodiment of the top view of the segments 41. At least one of the segments 41 of FIG. 4 has the same layout of the segment 41C shown in FIG. 6C. Referring to FIG. 6C, the segment 41C comprises an opening 604 which defines as a transparent region 605A of the segment 41B. Thus, the transparent region 605A is formed by one single opening 604. The remaining portion of the segment 41C, excluding the opening 604, defines as an opaque region 605B of the segment 41C. The area of the transparent region 605A is larger than 18% of the area of the segment 41C. In other words, the area of the opening 604 is larger than 18% of the area of the segment 41C. According to another embodiment, the area of the transparent region 605A is larger than 18% of the area of the segment 41C and smaller than 50% of the area of the segment 41C. In the embodiment, the shape of the segment 41C is square, while the shape of the opening 604 is circular. The shape of the transparent region 605A formed by the opening 604 is also circular. The center point of the segment 41C and the center point of the opening 604 are at the same position. In the embodiment where the pixel unit is equal to 1.0 um, when the length (b604) of the diameter of the opening 604 is designed to be larger than 0.48 times the side length (a) of the segment 41C (b604>0.48*a), the area of the transparent region 605A is larger than 18% of the area of the segment 41C.
  • FIG. 6D shows another exemplary embodiment of the top view of the segments 41. At least one of the segments 41 of FIG. 4 has the same layout of the segment 41D shown in FIG. 61). Referring to FIG. 6D, different from the embodiments of FIGS. 6A-6C, the segment 41D comprises more than one opening, which define a transparent region 607A of the segment 41D. In the embodiment of FIG. 6D, four openings 606A-606D are given as an example. Thus, the area of the transparent region 607A is equal to the sum of the areas of the openings 606A-606D. The remaining portion of the segment 41D, excluding the openings 606A-606D, defines an opaque region 607B of the segment 41D. The area of the transparent region 607A is larger than 18% of the area of the segment 41D. In other words, the total area of the openings 606A-606D is larger than 18% of the area of the segment 41D. According to another embodiment, the area of the transparent region 607A is larger than 18% of the area of the segment 41D and smaller than 50% of the area of the segment 41D. In the embodiment, the shape of the segment 41D is square, and the shape of each of the openings 606A-606D is also square. The openings 606A-606D are spaced apart from each other. As shown in FIG. 6D, the openings 606A-6061) are disposed near the center point of the segment 41D and symmetrically based on the center point of the segment 41D. The four sides of each of the openings 606A-606D are parallel with the four sides of the segment 41D. In an embodiment where the pixel unit is equal to 1.0 um, when the side length (b606) of each of the openings 606A-606D) is designed to be larger than 0.21 times the side length (a) of the segment 41D (b606>0.21*a), the area of the transparent region 607A is larger than 18% of the area of the segment 41D.
  • In the embodiment of FIG. 6D, the openings 606A-606D are disposed near the center point of the segment 41D. In another embodiment, the openings may be disposed in the corners of the segment 41D, as shown in FIG. 6E. FIG. 6E shows another exemplary embodiment of the top view of the segments 41. At least one of the segments 41 of FIG. 4 has the same layout of the segment 41E shown in FIG. 6E. The segment 41E comprises more than one opening, which define a transparent region 609A of the segment 41E. In the embodiment of FIG. 6E, four openings 608A-608D are given as an example. Thus, the area of the transparent region 609A is equal to the sum of the areas of the openings 608A-608D. The remaining portion of the segment 41E, excluding the openings 608A-608D, defines an opaque region 609B of the segment 41E. The area of the transparent region 609A is larger than 18% of the area of the segment 41E. In other words, the total area of the openings 608A-608D is larger than 18% of the area of the segment 41E. According to another embodiment, the area of the transparent region 609A is larger than 18% of the area of the segment 41E and smaller than 50% of the area of the segment 41E. In the embodiment, the shape of the segment 41E is square, and the shape of each of the openings 608A-608D is also square. The openings 608A-608D are spaced apart from each other. Due to the square shape, the segment 41E comprises four corners 610A-610D. The openings 608A-608D are disposed in the corners 610A-610D respectively. The four sides of each of the openings 608A-608D are parallel with the four sides of the segment 41E. In an embodiment where the pixel unit is equal to 1.0 um, when the side length (b608) of each of the openings 608A-608D is designed to be larger than 0.21 times the side length (a) of the segment 41E (b608>0.21*a), the area of the transparent region 609A is larger than 18% of the area of the segment 41E.
  • In the embodiment of FIG. 6E, the shapes of the openings 608A-608D are square. In another embodiment, the shapes of the openings may be triangular, as shown in FIG. 6F. FIG. 6F shows another exemplary embodiment of the top view of the segments 41. At least one of the segments 41 of FIG. 4 has the same layout of the segment 41F shown in FIG. 6F. The segment 41F comprises more than one opening, which define a transparent region 612A of the segment 41F. In the embodiment of FIG. 6F, four openings 611A-611D are given as an example. Thus, the area of the transparent region 612A is equal to the sum of the areas of the openings 611A-611D. The remaining portion of the segment 41F, excluding the openings 611A-611D, defines an opaque region 6012B of the segment 41F. The area of the transparent region 612A is larger than 18% of the area of the segment 41F. In other words, the total area of the openings 611A-611 is larger than 18% of the area of the segment 41F. According to another embodiment, the area of the transparent region 612A is larger than 18% of the area of the segment 41F and smaller than 50% of the area of the segment 41F. In the embodiment, the shape of the segment 41F is square, while the shape of each of the openings 611A-611D is triangular. Specifically, the shape of each of the openings 611A-611D is an isosceles triangle. The openings 611A-611D are spaced apart from each other. Due to the square shape, the segment 41F comprises four corners 613A-613D. The openings 611A-611D are disposed in the corners 613A-613D respectively. For each of the openings 611A-611D, the two sides of equal length correspond to one pair of adjacent sides of the segment 41F respectively. In an embodiment where the pixel unit is equal to 1.0 um, when the side length (b611) of each of the openings 611A-611D is designed to be larger than 0.30 times the side length (a) of the segment 41F (b611>0.30*a), the area of the transparent region 612A is larger than 18% of the area of the segment 41F.
  • FIG. 6G shows another exemplary embodiment of the top view of the segments 41. At least one of the segments 41 of FIG. 4 is the same as the segment 41G shown in FIG. 6G. The segment 41G comprises a plurality of openings which are spaced apart from each other and disposed on the center area of the segment 41G. In the embodiment of FIG. 6G, nine openings 614 are given as an example. The nine openings 614 and the space between the openings 614 define a transparent region 615A of the segment 41G. Thus, the area of the transparent region 615A is equal to the sum of the areas of the openings 614 and the area of the space between the openings 64. The remaining portion of the segment 41G, excluding the transparent region 615A, defines an opaque region 615B of the segment 41G. In the embodiment, the shape of the segment 41E is square, and the shape of the transparent region 615A is also square. Moreover, the shape of each of the openings 614 is square. The four sides of each of the openings 614 are parallel with the four sides of the segment 41G. The area of the transparent region 615A is larger than 18?% of the area of the segment 41G. According to another embodiment, the area of the transparent region 615A is larger than 18% of the area of the segment 41G and smaller than 50% of the area of the segment 41G. In an embodiment where the pixel unit is larger than 5.00 um, when the side length (b615) of the transparent region 615A is designed to be larger than 0.42 times the side length (a) of the segment 41G (b615>0.42*a), the area of the transparent region 615A is larger than 18% of the area of the segment 41G. As described above, the transparent region 615A is defined by nine openings 614 and the space between the openings 614. In the embodiment where there are nine openings in the transparent region 615A, to meet the condition in which the side length (b615) of the transparent region 615A is larger than 0.42 times the side length (a) of the segment 41G (b615>0.42*a), the side length (b614) of each of the openings 614 is equal to 0.20 times the side length (b615 a) of the transparent region 615A (b614=0.2*b615), and the distance (b616) between the two adjacent openings 614 is also equal to 0.20 times the side length (b615 a) of the transparent region 615A (b616=0.2*b615). The relationship between the side length (b614) and the side length (b615 a) and the relationship between the distance (b616) and the side length (b615 a) are taken as an example for illustration. In other embodiments, the relationship between the side length (b614) and the side length (b615 a) and the relationship between the distance (b616) and the side length (b615 a) are determined according to the number of openings in the transparent region 615A and the arrangement of the openings in the transparent region 615A. According to the embodiments of FIGS. 6D-6G, the transparent region 607A/ 609 A/ 612A/615A of the segment 41D/ 41 E/ 41F/41G is formed by several openings.
  • Referring to FIG. 3E, after the exposure to the hard-mask layer 31, the hard-mask 31′ is optionally developed by a developing solution to remove the exposed portions 310. The unexposed portions 311 and 312 are left on the under 30 to form patterns 311′ and 312′. Referring to the embodiments of FIGS. 5 and 6A-6G, each segment 41 comprises at least one opening, while the segment 42 is opaque. Thus, transmittance of each segment 41 is larger than the transmittance of the segment 42. In the cases where the segments 41 corresponding to the unexposed portions 311 have the same layout, the transmittance of the left segment 41 shown in FIG. 3D is equal to the transmittance of the right segment 41 shown in FIG. 3D. Accordingly, after the developing step, the height H311 of each pattern 311′ is smaller than the height H312 of the pattern 312′ (H311<H312); that is, the height H312 of the pattern 312′ is larger than the height H311 of each pattern 311′ (H312>H311).
  • Then, referring to FIG. 3F, the patterns 311 and the pattern 312 are reflowed through a thermal process to form lens structures 313 and a lens structure 314 respectively. As described above, the height H312 of the pattern 312′ is larger than the height H311 of each pattern 311′ (H312>H311). Thus, after the thermal process, that is, the height H314 of the lens structure 314 is larger than the height H313 of each lens structure 313 (H314>H313).
  • After the lens structures 313 and the lens structure 314 are formed, the under layer 30 is etched by using the lens structures 313 and the lens structure 314 as an etching mask to form the micro-lenses 130 and the micro-lens 131 respectively, as shown in FIG. 1, as described above, the height H314 of the lens structure 314 is larger than the height H313 of each lens structure 313 (H314>H313). Thus, after the etching step, the height H11 of the micro-lens 131 is larger than the height H110 of each micro-lens 130.
  • According to the above embodiments, each segment 41 comprises at least one opening, while the segment 42 is opaque. Accordingly, the micro-lenses with multi-heights can be formed by using the photomask 32 comprising the pattern segments 40 and 41 during the lithography process. Specifically, the height of the micro-lens corresponding to two pixel units is larger than the heights of other micro-lenses.
  • In the above embodiment of FIG. 1, the micro-lens 131 corresponds to two pixel units, while each of the micro-lenses 130 corresponds to one pixel unit. In other embodiments, each micro-lens corresponds to the same number of pixel units. For example, each micro-lens corresponds to one or two pixel units. In this case, the micro-lenses may have different heights, and the height of each micro-lens is determined according to the type of the corresponding filter. As shown in FIG. 7, an image sensor 7 comprises a plurality of micro-lenses which are arranged in rows and columns to form a micro-lens array 73. For clear illustration, FIG. 7 shows micro lenses 730-732 for the side view. The number of micro-lenses in the micro-lens array 73 is determined according to the design requirements. As shown in FIG. 7, a substrate 70 is provided, and a plurality of photo-sensors are formed in the substrate 70 and arranged in rows and columns to form a photo-sensor array 71. In FIG. 7, three photo-sensors 710-712 are shown for the cross section. A filter layer 72 is formed on the substrate 70. The filter layer 72 comprises filters, and one filter corresponds to one photo-sensor. The filters of the filter layer 72 are color filters, such as red filters, green filters, and blue filters for the primary color system, or cyan filters, yellow filters, and magenta filters for the complementary color system. In the embodiment, the filter layer 72 comprises red filters, green filters, and blue filters for the primary color system is given as an example. FIG. 7 shows a green filter 720G, a red filter 721R, and a blue filter 722B. A pixel unit is defined by a set of one photo-sensor and one filter, and the image sensor 7 is divided into several pixel regions by using the pixel unit. As shown in FIG. 7, the substrate 70 is divided into three equal pixel regions 700-702 by using the pixel unit.
  • The micro-lenses 730-732 arranged in the micro-lens array 73 are formed on the filter layer 72. As shown in FIG. 7, each of the micro-lenses 730-732 corresponds to one pixel unit. In detail, the micro-lens 730 corresponds to the green filter 720G and the photo-sensor 710, the micro-lens 731 corresponds to the red filter 721R and the photo-sensor 711, and the micro-lens 730 corresponds to the blue filter 722B and the photo-sensor 712. In response to the different wavelengths of red, green, and blue light, the height H731 of the micro-lens 731 corresponding to the red filter 721R is larger than the height H730 of the micro-lens 730 corresponding to the green filter 720G, and the height H730 of the micro-lens 730 is larger than the height H732 of the micro-lens 732 corresponding to the blue filter 722G (H731>H730>H732). Thus, the focal length of the micro-lens 731 is larger than the focal length of the micro-lens 730, and the focal length of the micro-lens 730 is larger than the focal length of the micro-lens 732.
  • The manufacture process of the image sensor 7 is similar to the manufacture process of the image sensor 1 shown in FIGS. 3A-3F. However, the photomask used in the lithography process for forming the micro-lenses 730-732 is different from the photomask 32 used in the lithography process for forming the micro-lenses 130 and 131. As shown in FIG. 8, the photomask 8 used in the lithography process for the image sensor 7 comprises a transparent substrate 80 and a plurality of pattern segments 81. The number of segments of the photomask 80 is given as an example. In practice, the number of segments of the photomask 80 is determined according the number of micro-lenses to be formed. The areas of the segments 81 are the same, in other words, the area of the segment for the micro-lens 731 is equal to the area of the segment for each of the micro-lenses 730 and 732. Each segment 81 is used to form one micro-lens through the lithography process, the reflowing step, and the etching step. In the embodiment of FIG. 8, each segment 81 has one of the layouts shown in FIGS. 6A-6G. Through adjusting the areas of the transparent regions of the segments 81, the transmittance of at least one segment 81 is different from the transmittances of the other segments 81 so that the height of at least one micro-lens is different from the heights of the other micro-lenses. In the embodiment of FIGS. 7 and 8, through setting the area of the transparent region of the segment 81 corresponding to the micro-lens 731 to be smaller than that of the segment 81 corresponding to the micro-lens 730 and setting that of the segment 81 corresponding to the micro-lens 730 to be smaller than that of the segment 81 corresponding to the micro-lens 732, the height H731 of the micro-lens 731 corresponding to the red filter 721R is larger than the height H730 of the micro-lens 730 corresponding to the green filter 720G, and the height H730 of the micro-lens 730 corresponding to the green filter 720G is larger than the height H732 of the micro-lens 732 corresponding to the green filter 722B (H731>H730>H732). In the embodiment, the segments 81 for the micro-lens 730-732 may have the same layout (such as one of the layouts shown in FIGS. 6A-6G) or different layouts (such as three different layouts among the layouts shown in FIGS. 6A-6G). In other embodiments, the segment 81 for the micro-lens 732 with the smallest height can be an opaque segment as shown in FIG. 5.
  • In the embodiments wherein each segment 41 comprises more than one opening, such as the segments 41D, 41E, and 41F, four openings are given as an example for each segment 41. In other embodiments, when each segment 41 is designed to comprise more than one opening, openings with odd number can be formed for each segment 41.
  • While the invention has been described by way of example and in terms of the preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. On the contrary, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.

Claims (20)

What is claimed is:
1. A method for forming a micro-lens array comprising:
forming a hard-mask layer
performing a lithography process on the hard-mask layer by a photomask to form a first pattern and a second pattern; and
reflowing the first pattern and the second pattern to form a first lens structure and a second lens structure respectively,
wherein the photomask comprises a first pattern segment and a second pattern segment, and the second pattern segment comprises a transparent region and an opaque region, and
wherein an area of the transparent region of the second pattern segment is larger than 18% of an area of the second pattern segment.
2. The method as claimed in claim 1, further comprising:
forming an under layer, wherein the hard-mask layer is formed on the under layer; and
etching the under layer by using the first lens structure and the second lens structure as an etching mask to form a first micro-lens and a second micro-lens respectively.
3. The method as claimed in claim 2, wherein a height of the first micro-lens is larger than a height of the second micro-lens.
4. The method as claimed in claim 2, further comprising:
forming a filter layer comprising a first color filter and a second filter,
wherein the under layer is formed on the filter layer, and
wherein the first color filter corresponds to the first micro-lens, and the second color filter corresponds to the second micro-lens.
5. The method as claimed in claim 2, wherein an area of the first micro-lens is larger than an area of the second micro-lens.
6. The method as claimed in claim 1, wherein performing the lithography process on the hard-mask layer by the photomask comprises:
exposing the hard-mask layer by light through the photomask to form exposed portion and first and second unexposed portions; and
removing the exposed portions from the hard-mask layer;
wherein the first pattern and the second pattern are formed by the first and second unexposed portions respectively
7. The method as claimed in claim 1, further comprising:
providing a substrate, wherein the hard-mask layer is formed on the substrate;
wherein the substrate comprises a first pixel region, a second pixel region, and a third pixel region, and
wherein the first and second pixel regions correspond to the first pattern segment, and the third pixel region corresponds to the second pattern segment.
8. The method as claimed in claim 7, further comprising:
forming photo-sensors in the first, second, and third regions of the substrate respectively.
9. The method as claimed in claim 1, wherein a height of the first pattern is larger than a height of the second pattern.
10. A photomask comprising:
a first pattern segment; and
a second pattern segment comprising a transparent region and an opaque region,
wherein an area of the transparent region of the second pattern segment is larger than 18% of an area of the second pattern segment.
11. The photomask as claimed in claim 10, wherein the transparent region of the second pattern segment comprises a plurality of openings which are spaced apart from each other, and a total area of the plurality of openings is larger than 18% of the area of the second pattern segment.
12. The photomask as claimed in claim 11, wherein a shape of each of the plurality of openings is triangular or rectangular.
13. The photomask as claimed in claim 11, wherein the second pattern segment comprises a plurality of corners, and the plurality of openings are disposed in the plurality of corners respectively.
14. The photomask as claimed in claim 10, wherein the transparent region of the second pattern segment is on a center area of the second pattern segment, and the transparent region of the second pattern segment comprises a plurality of openings which are spaced apart from each other.
15. The photomask as claimed in claim 14, wherein a shape of each of the plurality of openings is triangular or rectangular.
16. The photomask as claimed in claim 10, wherein a shape of the transparent region of the second pattern segment is square or circular.
17. The photomask as claimed in claim 10, wherein the first pattern segment is an opaque segment.
18. The photomask as claimed in claim 10, wherein an area of the first pattern segment is larger than the area of the second pattern segment.
19. The photomask as claimed in claim 10, wherein an area of the first pattern segment is equal to the area of the second pattern segment.
20. The photomask as claimed in claim 10, wherein the first pattern segment and the second pattern segment are micro-lens pattern segments.
US15/970,054 2018-05-03 2018-05-03 Method for forming micro-lens array and photomask therefor Abandoned US20190339422A1 (en)

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JP2018150315A JP6634125B2 (en) 2018-05-03 2018-08-09 Microlens array forming method and photomask
TW107138734A TWI691003B (en) 2018-05-03 2018-11-01 Method for forming micro-lens array and photomask
CN201811407906.XA CN110456429A (en) 2018-05-03 2018-11-23 Form the method and light mask of micro lens arrays
US17/228,031 US20210231840A1 (en) 2018-05-03 2021-04-12 Method for forming micro-lens array and photomask therefor

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