KR100734691B1 - Method for forming a mask pattern of the semiconductor device - Google Patents

Method for forming a mask pattern of the semiconductor device Download PDF

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KR100734691B1
KR100734691B1 KR1020050132748A KR20050132748A KR100734691B1 KR 100734691 B1 KR100734691 B1 KR 100734691B1 KR 1020050132748 A KR1020050132748 A KR 1020050132748A KR 20050132748 A KR20050132748 A KR 20050132748A KR 100734691 B1 KR100734691 B1 KR 100734691B1
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South Korea
Prior art keywords
contact hole
forming
mask
pattern
area
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KR1020050132748A
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Korean (ko)
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박세진
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동부일렉트로닉스 주식회사
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask

Abstract

A forming method of a mask pattern for a contact hole of a semiconductor device is provided to secure a process margin and to improve the performance of the device by acquiring an exact CD(Critical Dimension) from the contact hole using a round portion of the mask pattern. A mask pattern is used for obtaining a circle type contact hole from a semiconductor device. The mask pattern is formed like a cross type structure in order to prevent the variation of area between a designed pattern and a real pattern. At this time, a negative corner of the cross type structure is roundly formed to increase the area of the mask pattern and a positive corner of the cross type structure is roundly formed to decrease the area of the mask pattern.

Description

반도체 소자의 컨택홀 형성용 마스크 패턴 형성방법{METHOD FOR FORMING A MASK PATTERN OF THE SEMICONDUCTOR DEVICE}Method of forming mask pattern for forming contact hole of semiconductor device {METHOD FOR FORMING A MASK PATTERN OF THE SEMICONDUCTOR DEVICE}

도 1은 종래의 컨택홀 형성용 마스크 패턴 형성방법을 설명하는 도면, 1 is a view illustrating a conventional method for forming a mask pattern for forming a contact hole;

도 2는 종래에 마스크가공장비((a) 전자빔가공장비, (b) 레이저가공장비)를 이용하여 마스크상에 형성된 패턴 형상을 보여주는 도면, 2 is a view showing a pattern shape formed on a mask using a mask processing equipment ((a) electron beam processing equipment, (b) laser processing equipment) in the past,

도 3은 본 발명에 따른 반도체 소자의 컨택홀 형성용 마스크 패턴 형성방법을 설명하는 도면이다. 3 is a view for explaining a method of forming a mask pattern for forming a contact hole in a semiconductor device according to the present invention.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

A-D : 디자인된 컨택홀 형성영역 패턴A-D: Designed Contact Hole Formation Pattern

A-M, A-M' : 마스크상의 컨택홀 형성영역 패턴A-M, A-M ': Pattern of contact hole formation area on mask

A-P, A-P' : 웨이퍼 포토레지스트상의 컨택홀 형성영역 패턴A-P, A-P ': contact hole formation region pattern on wafer photoresist

M : 마스크M: Mask

P : 웨이퍼상의 포토레지스트P: photoresist on wafer

본 발명은 반도체 소자의 컨택홀(contact hole) 형성용 마스크 패턴(mask pattern) 형성방법에 관한 것으로서, 더욱 상세하게는 원형의 컨택홀을 형성하기 위해 먼저 마스크상에 형성하게 되는 컨택홀 형성영역의 패턴 형상을 종래의 사각형 형상에서 십자가 유사형상으로 대체하여 형성함으로써, 최종적으로 정확한 임계치수를 갖는 컨택홀이 형성되도록 하게 되는 반도체 소자의 컨택홀 형성용 마스크 패턴 형성방법에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a mask pattern for forming a contact hole in a semiconductor device. More particularly, the present invention relates to a method for forming a contact hole in a semiconductor device. The present invention relates to a method of forming a mask hole for forming a contact hole in a semiconductor device in which a contact shape having an accurate critical dimension is finally formed by replacing the pattern shape with a cross-like shape from a conventional rectangular shape.

일반적으로, 반도체 소자는 산화, 식각, 이온주입과 같은 수많은 단위공정을 거쳐 제조되게 되며, 이러한 단위공정들을 통해 형성된 다층 레이어(layer)간의 접촉 연결을 위해 또한 컨택홀(contact hole)을 형성하게 된다. In general, semiconductor devices are manufactured through numerous unit processes such as oxidation, etching, and ion implantation, and also form contact holes for contact connection between multilayer layers formed through such unit processes. .

컨택홀은 사진식각 공정을 통해 형성되게 되며, 해당 사진식각 공정은 식각할 패턴이 대응되게 형성된 마스크(mask)를 이용하여 웨이퍼(wafer)상에 도포되어 있는 포토레지스트(photo-resist)를 광학적으로 노광시킨 다음 현상하여 식각할 영역을 노출시킨 후, 노출된 해당 영역을 식각하는 수순으로 진행되게 된다. The contact hole is formed through a photolithography process, and the photolithography process uses a mask formed to correspond to a pattern to be etched optically to photo-resist coated on a wafer. After exposing and developing to expose the region to be etched, the exposed region is etched.

이때, 이용하게 되는 마스크(M)에 관해 살펴 보면, 통상적으로 디자인 시점에서 컨택홀 형성영역(A-D)을 사각형으로 디자인하여(도 1의 (a) 참조), 해당 디자인대로 마스크가공장비를 이용하여 마스크(M)상에 사각형 형상으로 컨택홀 형성영역(A-M)을 형성하게 되며(도 1의 (b) 참조), 이와 같은 마스크(M) 형성후 해당 마스크(M)를 이용하여 노광하게 되면, 노광 빛이 마스크(M)상의 사각형 컨택홀 형성영역(A-M)을 투과하여 하부의 웨이퍼상의 포토레지스트(P)상에 대응되는 컨택홀 형성영역(A-P)이 형성되게 되는데, 이때 웨이퍼상에 형성되는 컨택홀 형성영역(A-P)은 통상 사각형이 아닌 원형으로 형성되게 된다(도 1의 (c) 참조). In this case, when looking at the mask (M) to be used, typically by designing the contact hole forming area (AD) in a square at the design time point (see Fig. 1 (a)), using the mask processing equipment according to the design When the contact hole forming region AM is formed on the mask M in the shape of a rectangle (see FIG. 1B), and the mask M is exposed and then exposed using the mask M, The exposure light passes through the rectangular contact hole forming area AM on the mask M to form a contact hole forming area AP corresponding to the photoresist P on the lower wafer. The contact hole forming region AP is usually formed in a circle rather than a quadrangle (see FIG. 1C).

이와 같이, 마스크(M)상의 컨택홀 형성영역(A-M)은 사각형인데, 웨이퍼상에는 이와 다른 원형으로 컨택홀 형성영역(A-P)이 형성되게 되는 이유로는 컨택홀 형성영역(A-M)이 해상도 한계를 넘을 정도로 매우 미세하고, 또한 노광시 빛의 회절현상에 따른 영향인 것으로 알려져 있다. As described above, the contact hole forming area AM on the mask M is a quadrangle. The reason why the contact hole forming area AP is formed in a different circular shape on the wafer is that the contact hole forming area AM may exceed the resolution limit. It is known to be very fine to the extent and to be influenced by the diffraction phenomenon of light upon exposure.

물론, 이어서 웨이퍼상의 포토레지스트(P)상에 형성된 원형의 컨택홀 형성영역(A-P)은 현상되어 제거되게 됨으로써, 이후 제거된 해당 부분을 통해 식각이 진행되어 최종적으로 원형의 컨택홀이 형성되게 된다. Of course, the circular contact hole forming region AP formed on the photoresist P on the wafer is developed and removed, and then etching is performed through the removed portion to finally form the circular contact hole. .

한편, 사각형의 디자인대로 마스크가공장비를 이용하여 마스크(M)상에 사각형 형상의 컨택홀 형성영역(A-M)을 가공하여 형성함에 있어, 실제로는 해당 패턴(A-M)이 사각형으로 형성되지 않게 되는 문제점이 발생되고 있다. On the other hand, in the case of forming the rectangular contact hole forming area AM on the mask M by using the mask processing equipment as a rectangular design, in practice, the pattern (AM) is not formed into a square problem Is occurring.

즉, 마스크가공장비의 종류에는 전자빔(electronic beam)을 이용하는 전자빔가공장비(예컨대, EBM3500)와, 레이저(laser)를 이용하는 레이저가공장비(예컨대, ALTA4300)가 있는데, 이 중 전자빔가공장비를 이용하면, 그래도 도 2의 (a)에 나타낸 바와 같이 거의 사각형으로 패턴(A-M)이 형성되게 되나, 레이저가공장비를 이용하게 되면, 도 2의 (b)에 나타낸 바와 같이 모든 모서리부가 둥글게 라운딩(corner rounding)지게 형성되게 되며, 이와 같이 코너 라운딩진 패턴(A-M)으로 가공되게 되는 이유로는 조사되는 빔, 특히 레이저빔의 특성에 기인하는 것으로 고려되고 있다. That is, the types of mask processing equipment include electron beam processing equipment (e.g., EBM3500) using an electron beam and laser processing equipment (e.g., ALTA4300) using a laser. However, the pattern AM is formed in a substantially rectangular shape as shown in FIG. 2 (a). However, when the laser processing equipment is used, all corners are rounded as shown in FIG. 2 (b). The reason for being formed in this way and being processed into the corner rounding pattern AM is considered to be due to the characteristics of the beam to be irradiated, especially the laser beam.

그러나, 이와 같이 마스크(M)상에 코너 라운딩진 패턴(A-M)이 형성되게 된다면, 실질적으로 그 면적이 변화하게 되고, 그 면적이 변화하게 되면, 이후 웨이퍼 의 포토레지스트(P)상에 형성되게 되는 컨택홀 형성영역(A-P)의 임계치수(CD ; Critical Dimension)가 변경되게 되므로, 임계치수가 변경된 해당 컨택홀 형성영역(A-P)을 통해 이후 최종적으로 형성되게 되는 컨택홀의 임계치수 또한 변화되게 되어, 종국적으로 원하는 임계치수를 갖는 컨택홀을 정확하게 형성할 수 없게 되는 문제점이 발생되게 된다. However, if the corner rounded pattern AM is formed on the mask M in this manner, the area is substantially changed, and if the area is changed, then it is formed on the photoresist P of the wafer. Since the critical dimension (CD) of the contact hole forming region (AP) is changed, the critical dimension of the contact hole finally formed through the corresponding contact hole forming region (AP) whose threshold dimension is changed is also changed. Finally, a problem arises in that it is impossible to accurately form a contact hole having a desired threshold dimension.

그리고, 이와 같이 원하지 않는 임계치수의 컨택홀이 형성되게 된다면, 공정마진을 확보할 수 없게 되어 후속공정이 어려워지고, 종국적으로 반도체 소자의 성능을 저하시키게 된다. In addition, if contact holes having an unwanted critical dimension are formed as described above, process margins cannot be secured and subsequent processes become difficult, and ultimately, the performance of semiconductor devices is degraded.

본 발명은 상기와 같은 제반 문제점을 해결하기 위하여 창안된 것으로서, 마스크상의 패턴을 사각형에서 조금 변경시켜, 마스크가공장비를 통한 가공후에도 실질적으로 그 면적 변화가 발생되지 않도록 하게 되는 반도체 소자의 컨택홀 형성용 마스크 패턴 형성방법을 제공하는데 그 목적이 있다. The present invention was devised to solve the above-mentioned problems, and the contact hole of the semiconductor device is formed so that the pattern on the mask is slightly changed from the quadrangle so that the area change does not occur even after processing through the mask processing equipment. It is an object of the present invention to provide a mask pattern forming method.

상술한 목적을 달성하기 위한 본 발명의 반도체 소자의 컨택홀 형성용 마스크 패턴 형성방법은, 원형의 컨택홀을 형성하는데 이용될 마스크상에 형성하는 컨택홀 형성영역의 패턴 형상을 마스크가공장비를 이용하여, 사각형이되 네 모서리 부분이 미세하게 직각되도록 제거된 십자가 유사형상으로 형성하는 반도체 소자의 컨택홀 형성용 마스크 패턴 형성방법에 있어서, 상기 마스크가공장비는 전자빔가공장비 또는 레이저가공장비이며, 디자인에 따른 패턴과 실제로 형성되는 패턴간의 면적 변화가 유발되지 않도록 하기 위해, 모든 모서리부와 역모서리부를 코너 라운드지게 형성하되, 상기 모서리부는 면적이 감소되게 코너 라운드지도록 형성하고, 상기 역모서리부는 면적이 증가되게 코너 라운드지도록 형성하는 것을 특징으로 한다. The mask pattern forming method for forming a contact hole of a semiconductor device of the present invention for achieving the above object, using a mask processing equipment to form the pattern of the contact hole forming region formed on the mask to be used to form a circular contact hole In the method for forming a mask hole for forming a contact hole of a semiconductor device, which is formed in a quadrangle-like shape in which four corners are squarely removed, the mask processing equipment is an electron beam processing equipment or a laser processing equipment. In order not to cause a change in the area between the pattern and the pattern actually formed, all corners and the inverted corners are formed to be rounded corners, wherein the corners are formed to be rounded corners to reduce the area, and the reverse edges are It is characterized in that it is formed to increase the corner round.

본 발명의 상기 목적과 여러가지 장점은 이 기술분야에 숙련된 사람들에 의해 첨부된 도면을 참조하여 아래에 기술되는 발명의 바람직한 실시예로부터 더욱 명확하게 될 것이다.The above objects and various advantages of the present invention will become more apparent from the preferred embodiments of the invention described below with reference to the accompanying drawings by those skilled in the art.

이하, 첨부된 도면을 참조로 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 3은 본 발명에 따른 반도체 소자의 컨택홀 형성용 마스크 패턴 형성방법을 설명하는 도면이다. 3 is a view for explaining a method of forming a mask pattern for forming a contact hole in a semiconductor device according to the present invention.

설명에 앞서, 종래와 동일한 요소에 대해서는 그 상세한 설명을 일부 생략함을 밝힌다. Prior to the description, the same elements as in the prior art will be partially omitted.

본 발명에 따르면, 웨이퍼의 포토레지스트(P)상에 원형의 컨택홀 형성영역(A-P)을 형성하기 위해 먼저 마스크(M)의 사각형 형상의 컨택홀 형성영역(A-M)을 마스크가공장비를 이용하여 형성함에 있어, 해당 컨택홀 형성영역(A-M)을 전체적으로는 사각형이되 네 모서리 부분이 미세하게 직각되도록 제거된 십자가 유사형상으로 형성하게 된다. According to the present invention, in order to form the circular contact hole forming region AP on the photoresist P of the wafer, the rectangular contact hole forming region AM of the mask M is first formed using a mask processing equipment. In forming, the contact hole forming area AM is formed as a cross-like shape, which is removed as a quadrangular shape and the four corners are squarely formed as a whole.

즉, 디자인 시점에서 컨택홀 형성영역 패턴(A-D)을 십자가 유사형상으로 디자인하여, 이후 마스크가공장비를 이용하여 해당하는 십자가 유사형상 패턴(A-M)을 마스크(M)상에 형성하게 되면, 실제로는 도 3의 (b)에 나타낸 바와 같이 십자가 유사형상의 모든 모서리부와 역모서리부가 라운드지게 형성되게 되는데, 이때 모든 모서리부에서는 면적이 감소되도록 라운드지게 되나, 이를 보상하도록 모든 역모서리부에서는 면적이 증가되도록 라운드지게 됨으로써, 실질적으로 그 면적이 최대한 변화되지 않게 된다. That is, when the contact hole forming area pattern AD is designed to have a cross-like shape at the design point, and then a corresponding cross-like pattern AM is formed on the mask M by using a mask processing equipment, As shown in FIG. By being rounded to increase, the area is substantially unchanged as much as possible.

따라서, 해당 마스크(M)를 이용하여 웨이퍼의 포토레지스트(P)상에 형성하게 되는 원형의 컨택홀 형성영역(A-P)의 임계치수가 변화되지 않게 되어, 이후 해당 원형의 컨택홀 형성영역(A-P)을 이용하여 형성하게 되는 컨택홀의 임계치수도 변화되지 않고 정확한 값을 갖게 되는 것이다. Therefore, the critical dimension of the circular contact hole forming region AP to be formed on the photoresist P of the wafer using the mask M is not changed, and then the circular contact hole forming region AP is changed. The critical dimension of the contact hole to be formed by using does not change and will have an accurate value.

이로써, 본 발명에 따르면, 정확한 임계치수를 갖는 컨택홀을 형성할 수 있게 되므로, 공정마진을 확보할 수 있게 되고, 종국적으로 반도체 소자의 성능을 향상시킬 수 있게 되는 것이다. As a result, according to the present invention, it is possible to form a contact hole having an accurate critical dimension, thereby ensuring a process margin and ultimately improving the performance of the semiconductor device.

이상, 상기 내용은 본 발명의 바람직한 일 실시예를 단지 예시한 것으로 본 발명의 당업자는 본 발명의 요지를 변경시킴이 없이 본 발명에 대한 수정과 변경을 가할 수 있음을 인지해야 한다.In the foregoing description, it should be understood that those skilled in the art can make modifications and changes to the present invention without changing the gist of the present invention as merely illustrative of a preferred embodiment of the present invention.

본 발명에 따르면, 정확한 임계치수를 갖는 컨택홀을 형성할 수 있게 되므로, 공정마진을 확보할 수 있게 되고, 결과적으로 반도체 소자의 성능을 향상시킬 수 있는 효과가 달성될 수 있다. According to the present invention, since it is possible to form a contact hole having an accurate critical dimension, it is possible to secure a process margin, and as a result, an effect of improving the performance of the semiconductor device can be achieved.

Claims (3)

원형의 컨택홀을 형성하는데 이용될 마스크상에 형성하는 컨택홀 형성영역의 패턴 형상을 마스크가공장비를 이용하여, 사각형이되 네 모서리 부분이 미세하게 직각되도록 제거된 십자가 유사형상으로 형성하는 반도체 소자의 컨택홀 형성용 마스크 패턴 형성방법에 있어서, A semiconductor device for forming a pattern shape of a contact hole forming area formed on a mask to be used for forming a circular contact hole into a cross-like shape in which a quadrangular shape is removed so that four corners are minutely perpendicular to each other using a mask processing equipment. In the method for forming a mask pattern for forming a contact hole, 상기 마스크가공장비는 전자빔가공장비 또는 레이저가공장비이며, The mask processing equipment is an electron beam processing equipment or a laser processing equipment, 디자인에 따른 패턴과 실제로 형성되는 패턴간의 면적 변화가 유발되지 않도록 하기 위해, In order not to cause an area change between the pattern according to the design and the pattern actually formed, 모든 모서리부와 역모서리부를 코너 라운드지게 형성하되, All corners and inverted corners should be rounded corners, 상기 모서리부는 면적이 감소되게 코너 라운드지도록 형성하고, The corner portion is formed to be rounded corner to reduce the area, 상기 역모서리부는 면적이 증가되게 코너 라운드지도록 형성하는 것을 특징으로 하는 반도체 소자의 컨택홀 형성용 마스크 패턴 형성방법. The inverse edge portion is formed to form a corner round so as to increase the area of the contact hole forming mask pattern of a semiconductor device. 삭제delete 삭제delete
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100929733B1 (en) * 2007-12-24 2009-12-03 주식회사 동부하이텍 Manufacturing method of photo mask and fine pattern forming method using photo mask
US20210231840A1 (en) * 2018-05-03 2021-07-29 Visera Technologies Company Limited Method for forming micro-lens array and photomask therefor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990031211U (en) * 1997-12-30 1999-07-26 김영환 Contact Mask of Semiconductor Device
KR20030001560A (en) * 2001-06-27 2003-01-06 주식회사 하이닉스반도체 Photo mask of contact of semiconductor device
KR20040044502A (en) * 2001-08-28 2004-05-28 인피네온 테크놀로지스 아게 Phase-shift mask

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990031211U (en) * 1997-12-30 1999-07-26 김영환 Contact Mask of Semiconductor Device
KR20030001560A (en) * 2001-06-27 2003-01-06 주식회사 하이닉스반도체 Photo mask of contact of semiconductor device
KR20040044502A (en) * 2001-08-28 2004-05-28 인피네온 테크놀로지스 아게 Phase-shift mask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100929733B1 (en) * 2007-12-24 2009-12-03 주식회사 동부하이텍 Manufacturing method of photo mask and fine pattern forming method using photo mask
US20210231840A1 (en) * 2018-05-03 2021-07-29 Visera Technologies Company Limited Method for forming micro-lens array and photomask therefor

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