JP5798089B2 - センサ積層体、シールド、および第1のシールド安定化構造を備える装置、センサ積層体、シールド、および磁性層を備える装置、データ記憶媒体、記録ヘッド、およびアームを備える装置 - Google Patents
センサ積層体、シールド、および第1のシールド安定化構造を備える装置、センサ積層体、シールド、および磁性層を備える装置、データ記憶媒体、記録ヘッド、およびアームを備える装置 Download PDFInfo
- Publication number
- JP5798089B2 JP5798089B2 JP2012134721A JP2012134721A JP5798089B2 JP 5798089 B2 JP5798089 B2 JP 5798089B2 JP 2012134721 A JP2012134721 A JP 2012134721A JP 2012134721 A JP2012134721 A JP 2012134721A JP 5798089 B2 JP5798089 B2 JP 5798089B2
- Authority
- JP
- Japan
- Prior art keywords
- shield
- layer
- magnetic
- magnetic layer
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 169
- 230000006641 stabilisation Effects 0.000 title claims description 49
- 238000011105 stabilization Methods 0.000 title claims description 49
- 238000013500 data storage Methods 0.000 title claims description 8
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 106
- 230000008878 coupling Effects 0.000 claims description 24
- 238000010168 coupling process Methods 0.000 claims description 24
- 238000005859 coupling reaction Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 16
- 239000002885 antiferromagnetic material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 195
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 22
- 229910003321 CoFe Inorganic materials 0.000 description 15
- 230000005415 magnetization Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 230000004907 flux Effects 0.000 description 11
- 238000000137 annealing Methods 0.000 description 9
- 239000002131 composite material Substances 0.000 description 7
- 239000000696 magnetic material Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 230000000087 stabilizing effect Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000005381 magnetic domain Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- 229910015136 FeMn Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/10—Structure or manufacture of housings or shields for heads
- G11B5/11—Shielding of head against electric or magnetic fields
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/398—Specially shaped layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/167,142 US20120327537A1 (en) | 2011-06-23 | 2011-06-23 | Shield Stabilization Configuration With Applied Bias |
| US13/167,142 | 2011-06-23 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013008439A JP2013008439A (ja) | 2013-01-10 |
| JP2013008439A5 JP2013008439A5 (enExample) | 2013-05-02 |
| JP5798089B2 true JP5798089B2 (ja) | 2015-10-21 |
Family
ID=47361623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012134721A Expired - Fee Related JP5798089B2 (ja) | 2011-06-23 | 2012-06-14 | センサ積層体、シールド、および第1のシールド安定化構造を備える装置、センサ積層体、シールド、および磁性層を備える装置、データ記憶媒体、記録ヘッド、およびアームを備える装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US20120327537A1 (enExample) |
| JP (1) | JP5798089B2 (enExample) |
| MY (1) | MY156154A (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8630069B1 (en) * | 2012-10-04 | 2014-01-14 | HGST Netherlands B.V. | Magnetic shield having improved resistance to the hard bias magnetic field |
| US9593696B2 (en) | 2013-02-27 | 2017-03-14 | Woodward, Inc. | Rotary piston type actuator with hydraulic supply |
| US20140268417A1 (en) * | 2013-03-16 | 2014-09-18 | Seagate Technology Llc | Bottom shield stabilized magnetic seed layer |
| US9478239B2 (en) | 2013-06-27 | 2016-10-25 | Seagate Technology Llc | Reader structure with barrier layer contacting shield |
| US9691417B1 (en) | 2013-06-28 | 2017-06-27 | Seagate Technology Llc | Magnetoresistive sensor having a synthetic antiferromagnetic bottom shield |
| US9251815B2 (en) * | 2013-06-28 | 2016-02-02 | Seagate Technology Llc | Magnetoresistive sensor with AFM-stabilized bottom shield |
| US9153250B2 (en) | 2013-07-31 | 2015-10-06 | Seagate Technology Llc | Magnetoresistive sensor |
| US9230575B2 (en) * | 2013-12-13 | 2016-01-05 | Seagate Technology Llc | Magnetoresistive sensor with SAF structure having crystalline layer and amorphous layer |
| US9183858B2 (en) * | 2014-01-28 | 2015-11-10 | HGST Netherlands B.V. | Dual capping layer utilized in a magnetoresistive effect sensor |
| US9047893B1 (en) * | 2014-01-31 | 2015-06-02 | HGST Netherlands B.V. | Magnetic sensor having narrow trackwidth and small read gap |
| US9513349B2 (en) * | 2014-02-06 | 2016-12-06 | HGST Netherlands B.V. | Scissor type magnetic sensor with high magnetic moment bias structure for reduced signal asymmetry |
| US9368136B2 (en) * | 2014-02-27 | 2016-06-14 | Seagate Technology Llc | Magnetoresistive sensor having synthetic antiferromagnetic layer in top and bottom shields |
| US9633679B2 (en) | 2014-05-06 | 2017-04-25 | Seagate Technology Llc | Sensor stack structure with RKKY coupling layer between free layer and capping layer |
| US9412401B2 (en) | 2014-05-13 | 2016-08-09 | Seagate Technology Llc | Data reader magnetic shield with CoFeNiB material |
| US9230576B1 (en) * | 2014-09-08 | 2016-01-05 | HGST Netherlands B.V. | Scissor reader with side shield decoupled from bias material |
| US9269381B1 (en) | 2014-09-15 | 2016-02-23 | Seagate Technology Llc | Sensor structure having layer with high magnetic moment |
| US9454979B1 (en) * | 2014-11-14 | 2016-09-27 | Seagate Technology Llc | Sensor structure with multilayer top shield |
| US9653102B1 (en) * | 2014-12-19 | 2017-05-16 | Seagate Technology Llc | Data reader with pinned front shield |
| US10074387B1 (en) | 2014-12-21 | 2018-09-11 | Western Digital (Fremont), Llc | Method and system for providing a read transducer having symmetric antiferromagnetically coupled shields |
| US20160365104A1 (en) * | 2015-06-15 | 2016-12-15 | Seagate Technology Llc | Magnetoresistive sensor fabrication |
| US9646639B2 (en) | 2015-06-26 | 2017-05-09 | Western Digital (Fremont), Llc | Heat assisted magnetic recording writer having integrated polarization rotation waveguides |
| US9685177B2 (en) * | 2015-07-08 | 2017-06-20 | Seagate Technology Llc | Sensor stabilization in a multiple sensor magnetic reproducing device |
| US9601138B1 (en) * | 2015-09-09 | 2017-03-21 | Headway Technologies, Inc. | Bias layer and shield biasing design |
| US9666214B1 (en) * | 2015-09-23 | 2017-05-30 | Western Digital (Fremont), Llc | Free layer magnetic reader that may have a reduced shield-to-shield spacing |
| US9947344B2 (en) * | 2016-04-12 | 2018-04-17 | International Business Machines Corporation | Stabilizing layered structure for magnetic tape heads |
| US10068601B1 (en) * | 2016-08-09 | 2018-09-04 | Western Digital (Fremont), Llc | Free layer only magnetic reader that may have a reduced shield-to-shield spacing and a multilayer side bias |
| US10559412B2 (en) * | 2017-12-07 | 2020-02-11 | Tdk Corporation | Magnetoresistance effect device |
| US10522173B1 (en) * | 2018-06-13 | 2019-12-31 | Headway Technologies, Inc. | Magnetic read head structure with improved bottom shield design for better reader performance |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1091920A (ja) * | 1996-09-11 | 1998-04-10 | Nec Corp | 磁気抵抗効果型ヘッド |
| JPH11134620A (ja) * | 1997-10-30 | 1999-05-21 | Nec Corp | 強磁性トンネル接合素子センサ及びその製造方法 |
| US6597545B2 (en) | 2000-05-25 | 2003-07-22 | Seagate Technology Llc | Shield design for magnetoresistive sensor |
| GB2380052B (en) | 2000-07-13 | 2004-07-28 | Seagate Technology Llc | Domain control in shields of a magnetic transducer |
| JP2003303406A (ja) * | 2002-04-08 | 2003-10-24 | Hitachi Ltd | 磁気抵抗効果ヘッド及び磁気ヘッド |
| US6930865B2 (en) | 2002-05-14 | 2005-08-16 | Seagate Technology Llc | Magnetoresistive read sensor with short permanent magnets |
| JP4051271B2 (ja) * | 2002-11-26 | 2008-02-20 | 株式会社日立グローバルストレージテクノロジーズ | 磁気記録ヘッド及び磁気記録再生装置 |
| JP2004334921A (ja) * | 2003-04-30 | 2004-11-25 | Sony Corp | 磁気抵抗効果型磁気ヘッド |
| US7782574B1 (en) | 2005-04-11 | 2010-08-24 | Seagate Technology Llc | Magnetic heads disk drives and methods with thicker read shield structures for reduced stray field sensitivity |
| US7177122B2 (en) | 2003-10-27 | 2007-02-13 | Seagate Technology Llc | Biasing for tri-layer magnetoresistive sensors |
| JP2005203063A (ja) * | 2004-01-19 | 2005-07-28 | Hitachi Global Storage Technologies Netherlands Bv | 磁気ヘッド及び磁気記録再生装置 |
| JP4008456B2 (ja) * | 2005-04-27 | 2007-11-14 | Tdk株式会社 | 磁界検出センサ、薄膜磁気ヘッド、薄膜磁気ヘッドのウエハ、ヘッドジンバルアセンブリ、およびハードディスク装置 |
| US7918014B2 (en) * | 2005-07-13 | 2011-04-05 | Headway Technologies, Inc. | Method of manufacturing a CPP structure with enhanced GMR ratio |
| US7606007B2 (en) * | 2006-02-17 | 2009-10-20 | Hitachi Global Storage Technologies Netherlands B.V. | Shield stabilization for magnetoresistive sensors |
| US7974048B2 (en) * | 2007-11-28 | 2011-07-05 | Tdk Corporation | Magneto-resistive effect device of CPP type having shield layers coupled with ferromagnetic layers |
| US9442171B2 (en) | 2008-01-09 | 2016-09-13 | Seagate Technology Llc | Magnetic sensing device with reduced shield-to-shield spacing |
| US7881023B2 (en) * | 2008-01-24 | 2011-02-01 | Tdk Corporation | Magnetoresistive device of the CPP type, and magnetic disk system |
| US8514524B2 (en) * | 2008-05-09 | 2013-08-20 | Headway Technologies, Inc. | Stabilized shields for magnetic recording heads |
| US8477461B2 (en) * | 2008-07-29 | 2013-07-02 | Tdk Corporation | Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers |
| US8189303B2 (en) * | 2008-08-12 | 2012-05-29 | Tdk Corporation | Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers |
| US20100067148A1 (en) * | 2008-09-16 | 2010-03-18 | Tdk Corporation | Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers |
| US8049997B2 (en) * | 2008-09-29 | 2011-11-01 | Tdk Corporation | Magnetoresistive element including a pair of free layers coupled to a pair of shield layers |
| US8023230B2 (en) * | 2008-10-27 | 2011-09-20 | Tdk Corporation | Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers |
| US7615996B1 (en) * | 2009-01-21 | 2009-11-10 | Tdk Corporation | Examination method for CPP-type magnetoresistance effect element having two free layers |
| US8320075B2 (en) | 2009-01-27 | 2012-11-27 | Seagate Technology Llc | Biasing structure for write element domain control in a magnetic writer |
| US8194360B2 (en) | 2009-02-24 | 2012-06-05 | Seagate Technology Llc | Domain control in bottom shield of MR sensor |
| US8369048B2 (en) * | 2009-08-31 | 2013-02-05 | Tdk Corporation | CPP-type thin film magnetic head provided with side shields including a pair of antimagnetically exchanged-coupled side shield magnetic layers |
| US8179642B2 (en) * | 2009-09-22 | 2012-05-15 | Tdk Corporation | Magnetoresistive effect element in CPP structure and magnetic disk device |
| US8130475B2 (en) * | 2009-10-20 | 2012-03-06 | Tdk Corporation | Method for manufacturing CPP-type thin film magnetic head provided with a pair of magnetically free layers |
| US8089734B2 (en) * | 2010-05-17 | 2012-01-03 | Tdk Corporation | Magnetoresistive element having a pair of side shields |
| US8437106B2 (en) * | 2010-10-08 | 2013-05-07 | Tdk Corporation | Thin film magnetic head including spin-valve film with free layer magnetically connected with shield |
| US8462467B2 (en) * | 2010-10-08 | 2013-06-11 | Tdk Corporation | Thin film magnetic head including soft layer magnetically connected with shield |
| US8451567B2 (en) * | 2010-12-13 | 2013-05-28 | Headway Technologies, Inc. | High resolution magnetic read head using top exchange biasing and/or lateral hand biasing of the free layer |
| US20120250189A1 (en) * | 2011-03-29 | 2012-10-04 | Tdk Corporation | Magnetic head including side shield layers on both sides of a mr element |
-
2011
- 2011-06-23 US US13/167,142 patent/US20120327537A1/en not_active Abandoned
-
2012
- 2012-06-14 JP JP2012134721A patent/JP5798089B2/ja not_active Expired - Fee Related
- 2012-06-22 MY MYPI2012002881A patent/MY156154A/en unknown
-
2013
- 2013-12-17 US US14/109,184 patent/US9001472B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013008439A (ja) | 2013-01-10 |
| US9001472B2 (en) | 2015-04-07 |
| US20120327537A1 (en) | 2012-12-27 |
| MY156154A (en) | 2016-01-15 |
| US20140104729A1 (en) | 2014-04-17 |
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| LAPS | Cancellation because of no payment of annual fees |