JP5794687B2 - フォトニック結晶面発光レーザ - Google Patents

フォトニック結晶面発光レーザ Download PDF

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Publication number
JP5794687B2
JP5794687B2 JP2011177292A JP2011177292A JP5794687B2 JP 5794687 B2 JP5794687 B2 JP 5794687B2 JP 2011177292 A JP2011177292 A JP 2011177292A JP 2011177292 A JP2011177292 A JP 2011177292A JP 5794687 B2 JP5794687 B2 JP 5794687B2
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Japan
Prior art keywords
photonic crystal
lattice
surface emitting
emitting laser
length
Prior art date
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Application number
JP2011177292A
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English (en)
Japanese (ja)
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JP2013041948A (ja
JP2013041948A5 (enExample
Inventor
野田　進
進 野田
清太 岩橋
清太 岩橋
俊之 信岡
俊之 信岡
拓生 坂口
拓生 坂口
宮井　英次
英次 宮井
渡 國師
渡 國師
大西　大
大 大西
和也 長瀬
和也 長瀬
義勝 三浦
義勝 三浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Kyoto University NUC
Original Assignee
Rohm Co Ltd
Kyoto University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd, Kyoto University NUC filed Critical Rohm Co Ltd
Priority to JP2011177292A priority Critical patent/JP5794687B2/ja
Priority to US13/571,985 priority patent/US8619830B2/en
Publication of JP2013041948A publication Critical patent/JP2013041948A/ja
Publication of JP2013041948A5 publication Critical patent/JP2013041948A5/ja
Application granted granted Critical
Publication of JP5794687B2 publication Critical patent/JP5794687B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2011177292A 2011-08-12 2011-08-12 フォトニック結晶面発光レーザ Active JP5794687B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011177292A JP5794687B2 (ja) 2011-08-12 2011-08-12 フォトニック結晶面発光レーザ
US13/571,985 US8619830B2 (en) 2011-08-12 2012-08-10 Photonic crystal surface emission laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011177292A JP5794687B2 (ja) 2011-08-12 2011-08-12 フォトニック結晶面発光レーザ

Publications (3)

Publication Number Publication Date
JP2013041948A JP2013041948A (ja) 2013-02-28
JP2013041948A5 JP2013041948A5 (enExample) 2014-05-22
JP5794687B2 true JP5794687B2 (ja) 2015-10-14

Family

ID=47677541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011177292A Active JP5794687B2 (ja) 2011-08-12 2011-08-12 フォトニック結晶面発光レーザ

Country Status (2)

Country Link
US (1) US8619830B2 (enExample)
JP (1) JP5794687B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014136962A1 (ja) 2013-03-07 2014-09-12 浜松ホトニクス株式会社 レーザ素子及びレーザ装置
US9614352B2 (en) 2013-03-07 2017-04-04 Hamamatsu Photonics K.K. Laser element and laser device
US9627850B2 (en) 2013-03-08 2017-04-18 Japan Science And Technology Agency Two-dimensional photonic crystal surface-emitting laser
EP2966737B1 (en) * 2013-03-08 2019-05-01 Japan Science and Technology Agency Two-dimensional photonic crystal surface-emitting laser
CN105143923B (zh) * 2013-04-17 2018-03-09 国立研究开发法人科学技术振兴机构 光子晶体以及利用该光子晶体的光学功能设备
JP6202572B2 (ja) * 2014-02-06 2017-09-27 国立大学法人京都大学 半導体レーザモジュール
JP6305855B2 (ja) * 2014-07-11 2018-04-04 オリンパス株式会社 画像表示装置
US11637409B2 (en) * 2017-03-27 2023-04-25 Hamamatsu Photonics K.K. Semiconductor light-emitting module and control method therefor
US11646546B2 (en) 2017-03-27 2023-05-09 Hamamatsu Photonics K.K. Semiconductor light emitting array with phase modulation regions for generating beam projection patterns
JP6959042B2 (ja) 2017-06-15 2021-11-02 浜松ホトニクス株式会社 発光装置
CN111448725B (zh) 2017-12-08 2023-03-31 浜松光子学株式会社 发光装置及其制造方法
JP6925249B2 (ja) * 2017-12-08 2021-08-25 浜松ホトニクス株式会社 発光装置
CN112272906B (zh) 2018-06-08 2024-03-15 浜松光子学株式会社 发光元件
US11923655B2 (en) * 2018-08-27 2024-03-05 Hamamatsu Photonics K.K. Light emission device
US12184036B2 (en) 2019-08-30 2024-12-31 Kyoto University Two-dimensional photonic-crystal surface-emitting laser
US12489271B2 (en) * 2020-03-31 2025-12-02 Kyoto University Two-dimensional photonic-crystal laser
US20230027930A1 (en) * 2021-07-22 2023-01-26 Epistar Corporation Semiconductor device
CN113644548B (zh) * 2021-08-18 2023-11-07 业成科技（成都）有限公司 光子晶体面射型激光结构
GB2625726B (en) * 2022-12-21 2025-09-24 Vector Photonics Ltd Surface Emitting Laser Devices and Methods for Manufacturing Same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3983933B2 (ja) * 1999-05-21 2007-09-26 進 野田 半導体レーザ、および半導体レーザの製造方法
US6778581B1 (en) * 2002-09-24 2004-08-17 Finisar Corporation Tunable vertical cavity surface emitting laser
KR20080049734A (ko) * 2005-09-05 2008-06-04 고쿠리츠 다이가쿠 호진 교토 다이가쿠 2차원 포토닉 결정 면발광 레이저 광원
JP5070161B2 (ja) * 2007-08-31 2012-11-07 独立行政法人科学技術振興機構 フォトニック結晶レーザ

Also Published As

Publication number Publication date
US8619830B2 (en) 2013-12-31
US20130039375A1 (en) 2013-02-14
JP2013041948A (ja) 2013-02-28

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