JP2013041948A5 - - Google Patents
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- Publication number
- JP2013041948A5 JP2013041948A5 JP2011177292A JP2011177292A JP2013041948A5 JP 2013041948 A5 JP2013041948 A5 JP 2013041948A5 JP 2011177292 A JP2011177292 A JP 2011177292A JP 2011177292 A JP2011177292 A JP 2011177292A JP 2013041948 A5 JP2013041948 A5 JP 2013041948A5
- Authority
- JP
- Japan
- Prior art keywords
- lattice
- photonic crystal
- slab
- substrate
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004038 photonic crystal Substances 0.000 claims description 15
- 230000000737 periodic effect Effects 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 description 14
- 230000004927 fusion Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011177292A JP5794687B2 (ja) | 2011-08-12 | 2011-08-12 | フォトニック結晶面発光レーザ |
| US13/571,985 US8619830B2 (en) | 2011-08-12 | 2012-08-10 | Photonic crystal surface emission laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011177292A JP5794687B2 (ja) | 2011-08-12 | 2011-08-12 | フォトニック結晶面発光レーザ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013041948A JP2013041948A (ja) | 2013-02-28 |
| JP2013041948A5 true JP2013041948A5 (enExample) | 2014-05-22 |
| JP5794687B2 JP5794687B2 (ja) | 2015-10-14 |
Family
ID=47677541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011177292A Active JP5794687B2 (ja) | 2011-08-12 | 2011-08-12 | フォトニック結晶面発光レーザ |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8619830B2 (enExample) |
| JP (1) | JP5794687B2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014136962A1 (ja) | 2013-03-07 | 2014-09-12 | 浜松ホトニクス株式会社 | レーザ素子及びレーザ装置 |
| US9614352B2 (en) | 2013-03-07 | 2017-04-04 | Hamamatsu Photonics K.K. | Laser element and laser device |
| US9627850B2 (en) | 2013-03-08 | 2017-04-18 | Japan Science And Technology Agency | Two-dimensional photonic crystal surface-emitting laser |
| EP2966737B1 (en) * | 2013-03-08 | 2019-05-01 | Japan Science and Technology Agency | Two-dimensional photonic crystal surface-emitting laser |
| CN105143923B (zh) * | 2013-04-17 | 2018-03-09 | 国立研究开发法人科学技术振兴机构 | 光子晶体以及利用该光子晶体的光学功能设备 |
| JP6202572B2 (ja) * | 2014-02-06 | 2017-09-27 | 国立大学法人京都大学 | 半導体レーザモジュール |
| JP6305855B2 (ja) * | 2014-07-11 | 2018-04-04 | オリンパス株式会社 | 画像表示装置 |
| US11637409B2 (en) * | 2017-03-27 | 2023-04-25 | Hamamatsu Photonics K.K. | Semiconductor light-emitting module and control method therefor |
| US11646546B2 (en) | 2017-03-27 | 2023-05-09 | Hamamatsu Photonics K.K. | Semiconductor light emitting array with phase modulation regions for generating beam projection patterns |
| JP6959042B2 (ja) | 2017-06-15 | 2021-11-02 | 浜松ホトニクス株式会社 | 発光装置 |
| CN111448725B (zh) | 2017-12-08 | 2023-03-31 | 浜松光子学株式会社 | 发光装置及其制造方法 |
| JP6925249B2 (ja) * | 2017-12-08 | 2021-08-25 | 浜松ホトニクス株式会社 | 発光装置 |
| CN112272906B (zh) | 2018-06-08 | 2024-03-15 | 浜松光子学株式会社 | 发光元件 |
| US11923655B2 (en) * | 2018-08-27 | 2024-03-05 | Hamamatsu Photonics K.K. | Light emission device |
| US12184036B2 (en) | 2019-08-30 | 2024-12-31 | Kyoto University | Two-dimensional photonic-crystal surface-emitting laser |
| US12489271B2 (en) * | 2020-03-31 | 2025-12-02 | Kyoto University | Two-dimensional photonic-crystal laser |
| US20230027930A1 (en) * | 2021-07-22 | 2023-01-26 | Epistar Corporation | Semiconductor device |
| CN113644548B (zh) * | 2021-08-18 | 2023-11-07 | 业成科技(成都)有限公司 | 光子晶体面射型激光结构 |
| GB2625726B (en) * | 2022-12-21 | 2025-09-24 | Vector Photonics Ltd | Surface Emitting Laser Devices and Methods for Manufacturing Same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3983933B2 (ja) * | 1999-05-21 | 2007-09-26 | 進 野田 | 半導体レーザ、および半導体レーザの製造方法 |
| US6778581B1 (en) * | 2002-09-24 | 2004-08-17 | Finisar Corporation | Tunable vertical cavity surface emitting laser |
| KR20080049734A (ko) * | 2005-09-05 | 2008-06-04 | 고쿠리츠 다이가쿠 호진 교토 다이가쿠 | 2차원 포토닉 결정 면발광 레이저 광원 |
| JP5070161B2 (ja) * | 2007-08-31 | 2012-11-07 | 独立行政法人科学技術振興機構 | フォトニック結晶レーザ |
-
2011
- 2011-08-12 JP JP2011177292A patent/JP5794687B2/ja active Active
-
2012
- 2012-08-10 US US13/571,985 patent/US8619830B2/en active Active
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