JP5792831B2 - 貼り合せ装置および貼り合せ方法 - Google Patents
貼り合せ装置および貼り合せ方法 Download PDFInfo
- Publication number
- JP5792831B2 JP5792831B2 JP2013548190A JP2013548190A JP5792831B2 JP 5792831 B2 JP5792831 B2 JP 5792831B2 JP 2013548190 A JP2013548190 A JP 2013548190A JP 2013548190 A JP2013548190 A JP 2013548190A JP 5792831 B2 JP5792831 B2 JP 5792831B2
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- disk
- pressure
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- diameter dimension
- vacuum
- Prior art date
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Links
- 238000000034 method Methods 0.000 title claims description 30
- 230000007246 mechanism Effects 0.000 claims description 95
- 239000000853 adhesive Substances 0.000 claims description 20
- 230000001070 adhesive effect Effects 0.000 claims description 20
- 238000010030 laminating Methods 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 230000003028 elevating effect Effects 0.000 claims description 12
- 239000012790 adhesive layer Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000006837 decompression Effects 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013548190A JP5792831B2 (ja) | 2011-12-07 | 2012-11-28 | 貼り合せ装置および貼り合せ方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011267432 | 2011-12-07 | ||
JP2011267432 | 2011-12-07 | ||
PCT/JP2012/080675 WO2013084761A1 (ja) | 2011-12-07 | 2012-11-28 | 貼り合せ装置および貼り合せ方法 |
JP2013548190A JP5792831B2 (ja) | 2011-12-07 | 2012-11-28 | 貼り合せ装置および貼り合せ方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013084761A1 JPWO2013084761A1 (ja) | 2015-04-27 |
JP5792831B2 true JP5792831B2 (ja) | 2015-10-14 |
Family
ID=48574133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013548190A Active JP5792831B2 (ja) | 2011-12-07 | 2012-11-28 | 貼り合せ装置および貼り合せ方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5792831B2 (zh) |
KR (1) | KR101906509B1 (zh) |
TW (1) | TWI503232B (zh) |
WO (1) | WO2013084761A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11728200B2 (en) | 2019-05-23 | 2023-08-15 | Samsung Electronics Co., Ltd. | Wafer bonding apparatuses |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105957817A (zh) * | 2016-07-12 | 2016-09-21 | 武汉新芯集成电路制造有限公司 | 一种晶圆键合方法 |
CN109545692B (zh) * | 2018-11-22 | 2020-06-26 | 武汉新芯集成电路制造有限公司 | 一种降低晶圆键合边缘扭曲度的方法 |
JP7394638B2 (ja) * | 2020-01-28 | 2023-12-08 | 東京エレクトロン株式会社 | 研削装置、及び研削方法 |
KR102345736B1 (ko) * | 2020-02-28 | 2022-01-03 | 대한민국 | 밸브 연마장치 및 방법 |
JP7488738B2 (ja) * | 2020-09-18 | 2024-05-22 | 日機装株式会社 | 真空積層装置及び積層体の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090017248A1 (en) * | 2007-07-13 | 2009-01-15 | 3M Innovative Properties Company | Layered body and method for manufacturing thin substrate using the layered body |
JP2009032082A (ja) * | 2007-07-27 | 2009-02-12 | Canon Inc | データ処理装置、制御方法、及びプログラム |
CN103258762B (zh) * | 2007-08-10 | 2016-08-03 | 株式会社尼康 | 基板贴合装置及基板贴合方法 |
JP5798721B2 (ja) * | 2010-04-07 | 2015-10-21 | 株式会社ニコン | 基板位置合せ装置、基板貼り合せ装置、基板位置合せ方法および積層半導体の製造方法 |
-
2012
- 2012-11-28 WO PCT/JP2012/080675 patent/WO2013084761A1/ja active Application Filing
- 2012-11-28 KR KR1020147014634A patent/KR101906509B1/ko active IP Right Grant
- 2012-11-28 JP JP2013548190A patent/JP5792831B2/ja active Active
- 2012-12-04 TW TW101145402A patent/TWI503232B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11728200B2 (en) | 2019-05-23 | 2023-08-15 | Samsung Electronics Co., Ltd. | Wafer bonding apparatuses |
Also Published As
Publication number | Publication date |
---|---|
JPWO2013084761A1 (ja) | 2015-04-27 |
WO2013084761A1 (ja) | 2013-06-13 |
KR101906509B1 (ko) | 2018-10-10 |
TW201341194A (zh) | 2013-10-16 |
TWI503232B (zh) | 2015-10-11 |
KR20140099463A (ko) | 2014-08-12 |
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