JP5788738B2 - 放射線検出器の製造方法 - Google Patents
放射線検出器の製造方法 Download PDFInfo
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- JP5788738B2 JP5788738B2 JP2011185238A JP2011185238A JP5788738B2 JP 5788738 B2 JP5788738 B2 JP 5788738B2 JP 2011185238 A JP2011185238 A JP 2011185238A JP 2011185238 A JP2011185238 A JP 2011185238A JP 5788738 B2 JP5788738 B2 JP 5788738B2
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- Japan
- Prior art keywords
- layer
- photoelectric conversion
- film
- light
- scintillator
- Prior art date
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- 238000004381 surface treatment Methods 0.000 claims description 27
- 238000009832 plasma treatment Methods 0.000 claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 4
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- 239000010410 layer Substances 0.000 description 113
- 239000004065 semiconductor Substances 0.000 description 35
- 230000001681 protective effect Effects 0.000 description 20
- 239000000463 material Substances 0.000 description 19
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 16
- 239000013078 crystal Substances 0.000 description 16
- 238000003384 imaging method Methods 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 14
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- 238000001514 detection method Methods 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 239000003086 colorant Substances 0.000 description 9
- 238000000059 patterning Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 229910004205 SiNX Inorganic materials 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- -1 thallium activated sodium iodide Chemical class 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
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- 239000011368 organic material Substances 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000006124 Pilkington process Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
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- 239000000049 pigment Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- IRERQBUNZFJFGC-UHFFFAOYSA-L azure blue Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[S-]S[S-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] IRERQBUNZFJFGC-UHFFFAOYSA-L 0.000 description 1
- 125000005626 carbonium group Chemical group 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000276 potassium ferrocyanide Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 235000009518 sodium iodide Nutrition 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XOGGUFAVLNCTRS-UHFFFAOYSA-N tetrapotassium;iron(2+);hexacyanide Chemical compound [K+].[K+].[K+].[K+].[Fe+2].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] XOGGUFAVLNCTRS-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 235000013799 ultramarine blue Nutrition 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/36—Devices specially adapted for detecting X-ray radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
図2に示すように、シンチレータ70の柱状部72の厚みをt1とし、非柱状部71の厚みをt2としたとき、t1とt2との関係が下記(1)式を満たすことが好ましい。
なお、長波長成分をよりカットするために、平坦化層18にも上述の着色剤を混入するようにしてもよい。
10 放射線検出器
30 導電膜
34 グランド接続端子
60 光電変換基板
70 シンチレータ
100 放射線画像撮影装置
103 センサ部
Claims (5)
- 照射された光に応じて発生した電荷が読み出される光電変換素子を含むセンサ部を基板上に形成する工程と、
前記センサ部が設けられた前記基板の表面を平坦化する平坦化層を、前記基板上に形成する工程と、
前記平坦化層の上に帯電防止膜を形成する工程と、
前記帯電防止膜をグランドに接続した状態で前記帯電防止膜の表面にプラズマ処理またはコロナ放電処理を含む表面処理を施す工程と、
を含む放射線検出器の製造方法。 - 前記表面処理が施された前記帯電防止膜の上に発光層を形成する工程を更に含む
請求項1に記載の製造方法。 - 前記発光層は、前記帯電防止膜をグランドに接続した状態で形成される
請求項2に記載の製造方法。 - 前記帯電防止膜は、前記表面処理が施された後に、グランドと非接続状態とされる
請求項1から請求項3のいずれか1項に記載の製造方法。 - 前記発光層は、蒸着により形成される
請求項2または請求項3に記載の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011185238A JP5788738B2 (ja) | 2011-08-26 | 2011-08-26 | 放射線検出器の製造方法 |
US13/561,102 US8829447B2 (en) | 2011-08-26 | 2012-07-30 | Photoelectric conversion substrate, radiation detector, radiographic image capture device, and manufacturing method of radiation detector |
CN201210270199.0A CN102956665B (zh) | 2011-08-26 | 2012-07-31 | 光电转换基底、辐射检测器、射线照相图像捕获装置以及辐射检测器的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011185238A JP5788738B2 (ja) | 2011-08-26 | 2011-08-26 | 放射線検出器の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013046043A JP2013046043A (ja) | 2013-03-04 |
JP5788738B2 true JP5788738B2 (ja) | 2015-10-07 |
Family
ID=47742270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011185238A Expired - Fee Related JP5788738B2 (ja) | 2011-08-26 | 2011-08-26 | 放射線検出器の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8829447B2 (ja) |
JP (1) | JP5788738B2 (ja) |
CN (1) | CN102956665B (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013065825A (ja) * | 2011-08-26 | 2013-04-11 | Fujifilm Corp | 光電変換基板、放射線検出器、及び放射線画像撮影装置 |
US9806132B2 (en) | 2013-11-22 | 2017-10-31 | General Electric Company | Organic X-ray detector with barrier layer |
JP2016004002A (ja) * | 2014-06-18 | 2016-01-12 | キヤノン株式会社 | 放射線撮影装置及び放射線撮影システム |
FR3046297B1 (fr) * | 2015-12-23 | 2018-02-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique matriciel presentant une electrode superieure transparente |
US20170301735A1 (en) * | 2016-04-19 | 2017-10-19 | General Electric Company | Charge integrating devices and related systems |
US10481280B2 (en) * | 2016-07-07 | 2019-11-19 | Canon Kabushiki Kaisha | Radiation detecting apparatus, radiation detecting system, and manufacturing method for radiation detecting apparatus |
DE102016217431A1 (de) * | 2016-09-13 | 2018-03-15 | Robert Bosch Gmbh | Verfahren zum Betrieb einer Sicherheitsvorrichtung |
CN110100311B (zh) | 2016-12-27 | 2023-06-27 | 夏普株式会社 | 摄像面板及其制造方法 |
WO2018123907A1 (ja) * | 2016-12-27 | 2018-07-05 | シャープ株式会社 | 撮像パネル及びその製造方法 |
JP6796150B2 (ja) | 2017-02-10 | 2020-12-02 | シャープ株式会社 | 撮像パネル及びその製造方法 |
KR102461817B1 (ko) * | 2017-09-05 | 2022-10-31 | 엘지디스플레이 주식회사 | 엑스레이 검출기용 어레이 기판과 이를 포함하는 엑스레이 검출기 및 그 제조 방법 |
JP2019145595A (ja) * | 2018-02-16 | 2019-08-29 | シャープ株式会社 | アクティブマトリクス基板及びそれを備えたx線撮像パネルと製造方法 |
KR102659426B1 (ko) * | 2018-12-27 | 2024-04-19 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출기 |
US20220020787A1 (en) * | 2020-07-17 | 2022-01-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, semiconductor image sensor, and method of manufacturing the same |
JP7449264B2 (ja) * | 2021-08-18 | 2024-03-13 | 株式会社東芝 | 放射線検出器 |
CN115172397A (zh) * | 2022-01-19 | 2022-10-11 | 友达光电股份有限公司 | 感测装置 |
Family Cites Families (16)
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JPS63300576A (ja) * | 1987-05-29 | 1988-12-07 | Mitsubishi Electric Corp | カラ−センサ |
JP4298081B2 (ja) | 1999-09-01 | 2009-07-15 | キヤノン株式会社 | 半導体装置及びそれを備えた放射線撮像システム |
JP2004325442A (ja) | 2003-04-07 | 2004-11-18 | Canon Inc | 放射線検出装置、及びその製造方法 |
US6940107B1 (en) * | 2003-12-12 | 2005-09-06 | Marvell International Ltd. | Fuse structures, methods of making and using the same, and integrated circuits including the same |
JP4972288B2 (ja) * | 2004-08-30 | 2012-07-11 | 富士フイルム株式会社 | 撮像素子 |
JP2006100766A (ja) * | 2004-08-31 | 2006-04-13 | Fuji Photo Film Co Ltd | 光電変換素子、及び撮像素子、並びに、これらに電場を印加する方法。 |
JP4464260B2 (ja) * | 2004-11-24 | 2010-05-19 | キヤノン株式会社 | 半導体装置、放射線撮像装置、及びその製造方法 |
CN101146479A (zh) * | 2005-03-25 | 2008-03-19 | 柯尼卡美能达医疗印刷器材株式会社 | 射线照相成像系统 |
WO2007099796A1 (ja) * | 2006-02-22 | 2007-09-07 | Nippon Sheet Glass Company, Limited. | 発光ユニット、照明装置及び画像読取装置 |
JP2008103478A (ja) * | 2006-10-18 | 2008-05-01 | Fujifilm Corp | 固体撮像装置及びその製造方法 |
FR2914499B1 (fr) * | 2007-04-02 | 2009-05-29 | St Microelectronics Sa | Procede et circuit d'obtention d'un echantillon dans un capteur d'images |
JP2011017683A (ja) * | 2009-07-10 | 2011-01-27 | Fujifilm Corp | 放射線画像検出器及びその製造方法 |
JP5650898B2 (ja) * | 2009-09-07 | 2015-01-07 | 株式会社東芝 | 放射線検出器及びその製造方法 |
JP5523803B2 (ja) * | 2009-11-27 | 2014-06-18 | 富士フイルム株式会社 | 放射線センサおよび放射線画像撮影装置 |
JP2011176274A (ja) * | 2010-01-28 | 2011-09-08 | Fujifilm Corp | 放射線検出素子 |
JP2013046042A (ja) * | 2011-08-26 | 2013-03-04 | Fujifilm Corp | 光電変換基板、放射線検出器、及び放射線画像撮影装置 |
-
2011
- 2011-08-26 JP JP2011185238A patent/JP5788738B2/ja not_active Expired - Fee Related
-
2012
- 2012-07-30 US US13/561,102 patent/US8829447B2/en not_active Expired - Fee Related
- 2012-07-31 CN CN201210270199.0A patent/CN102956665B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20130048863A1 (en) | 2013-02-28 |
CN102956665B (zh) | 2016-08-17 |
JP2013046043A (ja) | 2013-03-04 |
CN102956665A (zh) | 2013-03-06 |
US8829447B2 (en) | 2014-09-09 |
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