JP5778460B2 - Rolled copper foil, method for producing the same, and copper-clad laminate - Google Patents
Rolled copper foil, method for producing the same, and copper-clad laminate Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/02—Alloys based on copper with tin as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
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Description
本発明は、例えばフレキシブル配線板(FPC:Flexible Printed Circuit)に使用され、銅張積層板に適した圧延銅箔及びその製造方法、並びに銅張積層板に関する。 The present invention relates to a rolled copper foil suitable for a copper-clad laminate, a method for manufacturing the same, and a copper-clad laminate, for example, used in flexible printed circuits (FPCs).
フレキシブル配線板(FPC)は樹脂層と銅箔を積層してなり、繰り返し屈曲部に好適に用いられる。このようなFPCに用いられる銅箔としては、屈曲性に優れた圧延銅箔が広く用いられている。圧延銅箔の屈曲性を向上させる方法として、再結晶焼鈍後の立方体集合組織を発達させる技術(特許文献1)や、銅箔の板厚方向に貫通する結晶粒の割合を多くする技術(特許文献2)が報告されている。
ところが、これらの銅箔を用いてFPCを製造する際、カバーレイとの密着性を向上させるために表面(圧延面)をエッチングすると、表面(圧延面)に直径20μm程度のくぼみが発生することがある。これは、再結晶焼鈍後に立方体組織が発達するように結晶方位が制御されているため、均一な組織のなかに単独で性質の異なる結晶粒が存在することに起因するとされている。そして、エッチングされる結晶面によって金属のエッチング速度は異なるため、上記結晶粒が周囲よりも深くエッチングされ、大きなくぼみとなる。このくぼみは、回路のエッチング性を低下させたり、外観検査で不良と判定され歩留を低下させたりする原因となる。
A flexible wiring board (FPC) is formed by laminating a resin layer and a copper foil, and is preferably used for repeated bending portions. As a copper foil used for such FPC, a rolled copper foil excellent in flexibility is widely used. As a method for improving the flexibility of the rolled copper foil, a technique for developing a cubic texture after recrystallization annealing (Patent Document 1) and a technique for increasing the proportion of crystal grains penetrating in the thickness direction of the copper foil (patent) Reference 2) has been reported.
However, when manufacturing the FPC using these copper foils, if the surface (rolled surface) is etched to improve the adhesion to the coverlay, a depression with a diameter of about 20 μm will be generated on the surface (rolled surface). There is. This is attributed to the fact that the crystal orientation is controlled so that the cubic structure develops after the recrystallization annealing, and therefore crystal grains having different properties exist in the uniform structure. Since the etching rate of the metal differs depending on the crystal plane to be etched, the crystal grains are etched deeper than the surroundings, resulting in a large depression. This indentation causes the circuit etchability to deteriorate, or causes the appearance to be judged to be defective by appearance inspection and decreases the yield.
このようなことから、圧延の前または圧延後に銅箔の表面(圧延面)に機械研磨を行うことで、ひずみを与え、これを加工変質層として再結晶後に表面(圧延面)に不均一な結晶粒を群発させ、単独で性質の異なる結晶粒を存在させない技術(特許文献3)が報告されている。 Therefore, mechanical polishing is performed on the surface (rolled surface) of the copper foil before or after rolling to give strain, and this is used as a work-affected layer and is nonuniform on the surface (rolled surface) after recrystallization. There has been reported a technique (Patent Document 3) in which crystal grains are clustered and crystal grains having different properties alone do not exist.
しかしながら、特許文献3記載の技術の場合、機械研磨によって薄い銅箔が破断したり、生産性が低下したりするという問題がある。又、機械研磨によって生成される加工変質層は3μm以下と薄いため、機械研磨をし過ぎて加工変質層自身を削り落とす可能性があり、適正な厚みで安定して加工変層を形成することが難しい。さらに、銅箔を製造するための圧延設備等と別に、機械研磨のための各種設備が必要となる。 However, in the case of the technique described in Patent Document 3, there is a problem that a thin copper foil is broken by mechanical polishing or productivity is lowered. In addition, since the work-affected layer generated by mechanical polishing is as thin as 3 μm or less, there is a possibility that the work-affected layer itself may be scraped off due to excessive mechanical polishing. Is difficult. Furthermore, various equipment for mechanical polishing is required separately from rolling equipment for producing copper foil.
すなわち、本発明は上記の課題を解決するためになされたものであり、屈曲性に優れると共に、表面エッチング特性が良好な圧延銅箔およびその製造方法、並びに銅張積層板の提供を目的とする。 That is, the present invention has been made to solve the above-described problems, and an object thereof is to provide a rolled copper foil having excellent flexibility and surface etching characteristics, a method for producing the same, and a copper-clad laminate. .
本発明者らは種々検討した結果、銅箔素材の仕上げ冷間圧延の最終パスを低い加工度とすることで、圧延銅箔の最表層に、圧延集合組織とは異なる加工組織を安定して形成可能であることを見出した。この加工組織を再結晶させることで、銅箔表面(圧延面)に不均一な結晶粒を群発させ、直径20μm程度のくぼみの発生が抑制される。 As a result of various studies, the inventors of the present invention have made the final pass of the finish cold rolling of the copper foil material a low degree of processing, so that the outermost layer of the rolled copper foil has a stable processing structure different from the rolling texture. It was found that it can be formed. By recrystallizing this processed structure, non-uniform crystal grains are clustered on the surface of the copper foil (rolled surface), and the generation of a recess having a diameter of about 20 μm is suppressed.
すなわち本発明の圧延銅箔は、(A)JIS-H3100(C1100)に規格するタフピッチ銅、(B)JIS-H3100(C1020)に規格する無酸素銅、(C)添加元素としてSnを100〜500質量ppm含有し、及び/又はAgを100〜200質量ppm含有し、残部を前記タフピッチ銅又は前記無酸素銅、又は、(D)添加元素としてSn、Ag、In、Ti、Zn、Zr、Fe、P、Ni、Si、Ag、Te、Cr、Nb、Vからなる元素の一種以上を合計で20〜500質量ppm含有し、残部を前記タフピッチ銅又は前記無酸素銅とする組成からなり、200℃で0.5時間焼鈍後にI(200)/I0(200)が50以上であり、かつ触針式表面粗さ計で測定したJIS-B0601に規定する輪郭曲線要素の平均長さをRsmとしたとき、圧延平行方向に測定した値RsmRDと、圧延直角方向に測定した値RsmTDとの比(RsmTD/RsmRD)が2.0以上であり、200℃で0.5時間焼鈍後に、表面(圧延面)の0.5mm四方内に長径20μm以下の結晶粒が占める面積率が20%以上であり、かつ圧延平行断面において圧延方向長さ0.5mmをSEM観察した場合に、銅箔厚み中心を跨ぎかつ長径が20μm以下である結晶粒が占める面積率が観察視野の20%以下である。
ここでI(200)/I0(200)とは、X線回折法による2θ/θ測定における試料の(200)面回折ピークの積分強度I(200)を、X線回折法による2θ/θ測定における銅粉末の(200)面回折ピークの積分強度I0(200)で除した値であり、立方体方位への集合度の指標として用いる値である。つまり上記のI(200)/I0(200)が50以上という規定は立方体方位が一定以上発達していることを示している。
That is, the rolled copper foil of the present invention comprises (A) tough pitch copper standardized to JIS-H3100 (C1100), (B) oxygen-free copper standardized to JIS-H3100 (C1020), and (C) Sn as an additive element from 100 to 100 500 ppm by mass and / or 100 to 200 ppm by mass of Ag, the balance being the tough pitch copper or the oxygen-free copper, or (D) Sn, Ag, In, Ti, Zn, Zr, It contains a total of 20 to 500 ppm by mass of one or more elements composed of Fe, P, Ni, Si, Ag, Te, Cr, Nb, and V, and the balance is the tough pitch copper or the oxygen-free copper. Rsm is the average length of contour curve elements specified in JIS-B0601 with I (200) / I0 (200) of 50 or more after annealing at 200 ° C for 0.5 hour and measured with a stylus type surface roughness meter When measured in the rolling parallel direction The ratio (RsmTD / RsmRD) of the measured value RsmRD and the value RsmTD measured in the direction perpendicular to the rolling (RsmTD / RsmRD) is 2.0 or more. When the area ratio occupied by the crystal grains is 20% or more and the length in the rolling direction is 0.5 mm in the rolling parallel cross section by SEM observation, the area ratio occupied by the crystal grains straddling the copper foil thickness center and having a major axis of 20 μm or less Is 20% or less of the observation field.
Here, I (200) / I0 (200) means the integrated intensity I (200) of the (200) plane diffraction peak of the sample in 2θ / θ measurement by X-ray diffraction method, and 2θ / θ measurement by X-ray diffraction method. Is a value divided by the integrated intensity I0 (200) of the (200) plane diffraction peak of the copper powder at, and is a value used as an index of the degree of assembly in the cube orientation. In other words, the above-mentioned rule that I (200) / I0 (200) is 50 or more indicates that the cube orientation is developed to a certain level or more.
銅箔厚みの2〜5%をエッチングにより除去した後の銅箔の一方の表面(圧延面)において、表面(圧延面)の0.5mm四方を7視野観察したとき、長径が20μmを超える凹部が0.5個/mm2以下であることが好ましい。 On one surface of the copper foil (rolled surface) after removing 2 to 5% of the copper foil thickness by etching, a concave portion with a major axis exceeding 20 μm is observed when seven fields of 0.5 mm square of the surface (rolled surface) are observed. The number is preferably 0.5 pieces / mm 2 or less.
本発明の圧延銅箔の製造方法は、前記圧延銅箔の製造方法であって、銅箔素材を最終冷間圧延加工度97%以上で冷間圧延し、かつ最終冷間圧延の最終パスにおいて1パス加工度2%以上10%未満の冷間圧延を施す。 The method for producing a rolled copper foil of the present invention is a method for producing the rolled copper foil, wherein the copper foil material is cold-rolled at a final cold rolling degree of 97% or more, and in the final pass of the final cold rolling Cold rolling is performed at a pass degree of 2% or more and less than 10%.
本発明の銅張積層板は、請求項1又は2に記載の圧延銅箔と樹脂層とを積層してなる。
Copper-clad laminate of the present invention, ing by laminating the rolled copper foil and a resin layer according to claim 1 or 2.
本発明によれば、屈曲性に優れると共に、表面エッチング特性が良好な圧延銅箔を安定して得ることができる。 According to the present invention, it is possible to stably obtain a rolled copper foil having excellent flexibility and excellent surface etching characteristics.
以下、本発明の実施形態に係る圧延銅箔について説明する。 Hereinafter, the rolled copper foil which concerns on embodiment of this invention is demonstrated.
<成分組成>
銅箔の成分組成としては、JISに規格するタフピッチ銅(TPC)又は無酸素銅(OFC)を好適に用いることができる。又、添加元素としてSnを100〜500質量ppm含有し、及び/又はAgを100〜200質量ppm含有し、残部をタフピッチ銅又は無酸素銅としてもよい。
又、添加元素としてSn、Ag、In、Ti、Zn、Zr、Fe、P、Ni、Si、Ag、Te、Cr、Nb、Vからなる元素の一種以上を合計で20〜500質量ppm含有し、残部をタフピッチ銅又は無酸素銅としてもよい。
なお、FPCに用いられる圧延銅箔は屈曲性を要求されるとともに、表面がエッチングされることから、圧延銅箔の厚みは20μm以下が好ましい。又、無酸素銅はJIS-H3100(C1020)に規格され、タフピッチ銅はJIS-H3100(C1100)に規格されている。
<Ingredient composition>
As the component composition of the copper foil, tough pitch copper (TPC) or oxygen-free copper (OFC) specified in JIS can be suitably used. Further, Sn as an additive element may be contained in an amount of 100 to 500 ppm by mass and / or Ag may be contained in an amount of 100 to 200 ppm by mass, and the remainder may be made of tough pitch copper or oxygen-free copper.
Further, it contains 20 to 500 ppm by mass in total of one or more elements consisting of Sn, Ag, In, Ti, Zn, Zr, Fe, P, Ni, Si, Ag, Te, Cr, Nb, and V as additive elements. The balance may be tough pitch copper or oxygen-free copper.
In addition, since the rolled copper foil used for FPC is requested | required of flexibility and the surface is etched, the thickness of the rolled copper foil is preferably 20 μm or less. Oxygen-free copper is standardized by JIS-H3100 (C1020), and tough pitch copper is standardized by JIS-H3100 (C1100).
<結晶方位>
本発明の圧延銅箔は、200℃で0.5時間焼鈍後にI(200)/I0(200)が50以上である必要がある。圧延銅箔に200℃で0.5時間の焼鈍を行うと再結晶組織が生じるが、I(200)/I0(200)=50は、再結晶焼鈍後に立方体集合組織(200)が発達して圧延銅箔の屈曲性を向上させる指標となる。従って、200℃で0.5時間焼鈍後にI(200)/I0(200)が50未満である圧延銅箔は、そもそも高屈曲性の材料として適さない。
200℃で0.5時間焼鈍後にI(200)/I0(200)を50以上とする方法としては、上記特許文献1に記載されている方法を採用することができる。例えば、最終冷間圧延の直前の焼鈍を、この焼鈍で得られる再結晶粒の平均粒径が5〜20μmになる条件下で行い、最終冷間圧延での圧延加工度を90%以上とすることができる、焼鈍条件は、焼鈍を連続焼鈍炉で行う場合、500〜800℃の温度で、当該温度に依存して5〜600秒加熱することにより実施され、焼鈍をバッチで行う場合は、130〜500℃の温度で1〜24時間加熱することにより実施される。
<Crystal orientation>
The rolled copper foil of the present invention needs to have I (200) / I0 (200) of 50 or more after annealing at 200 ° C. for 0.5 hour. Annealing the rolled copper foil at 200 ° C for 0.5 hours produces a recrystallized structure. When I (200) / I0 (200) = 50, the cube texture (200) develops after the recrystallized annealing and the rolled copper This is an index for improving the flexibility of the foil. Therefore, a rolled copper foil whose I (200) / I0 (200) is less than 50 after annealing at 200 ° C. for 0.5 hour is not suitable as a highly flexible material in the first place.
As a method of setting I (200) / I0 (200) to 50 or more after annealing at 200 ° C. for 0.5 hour, the method described in Patent Document 1 can be employed. For example, the annealing immediately before the final cold rolling is performed under the condition that the average grain size of recrystallized grains obtained by this annealing is 5 to 20 μm, and the rolling degree in the final cold rolling is 90% or more. The annealing conditions can be carried out by heating at a temperature of 500 to 800 ° C. depending on the temperature for 5 to 600 seconds when annealing is performed in a continuous annealing furnace, and when annealing is performed in batches, It is carried out by heating at a temperature of 130 to 500 ° C. for 1 to 24 hours.
<表面(圧延面)形状>
本発明の圧延銅箔は、後述するように仕上げ冷間圧延の加工度を低くすることで製造することができ、これにより圧延銅箔の最表層に圧延集合組織とは異なる加工組織が形成される。そして、この加工組織が再結晶することで、銅箔表面(圧延面)に不均一な結晶粒を群発しやすくなり、直径20μm程度のくぼみの発生が抑制される。
本発明の圧延銅箔においては、このようにくぼみの発生が抑制された表面(圧延面)の形状を以下のように規定している。
<Surface (rolled surface) shape>
As described later, the rolled copper foil of the present invention can be produced by lowering the degree of finish cold rolling, thereby forming a processed structure different from the rolled texture on the outermost layer of the rolled copper foil. The And by recrystallizing this processed structure, it becomes easy to cluster non-uniform crystal grains on the surface (rolled surface) of the copper foil, and the generation of a recess having a diameter of about 20 μm is suppressed.
In the rolled copper foil of the present invention, the shape of the surface (rolled surface) in which the generation of the dents is thus suppressed is defined as follows.
まず、最終圧延後の銅箔表面(圧延面)について触針式表面粗さ計で測定したJIS-B0601に規定する輪郭曲線要素の平均長さをRsmとしたとき、圧延平行方向に測定した値RsmRDと、圧延直角方向に測定した値RsmTDとの比(RsmTD/RsmRD)が2.0以上であることが必要である。上記した低加工度で仕上げ冷間圧延(スキンパス)を行うと、図1に示すように表面(圧延面)に圧延方向Lに沿う筋状の凹凸が生じる。この場合、圧延方向Lに沿う凹凸が小さく、圧延直角方向nに沿う凹凸が大きくなり、(RsmTD/RsmRD)が2.0以上であれば、低加工度で仕上げ冷間圧延(スキンパス)を行ったものと考えられる。
(RsmTD/RsmRD)が2.0未満の場合、低加工度でのスキンパスを行わなかったか、又はスキンパスが不十分であり、圧延銅箔の最表層に圧延集合組織と異なる加工組織を十分に形成することが困難である。(RsmTD/RsmRD)の上限は特に規定されないが、通常3.5程度である。
First, the value measured in the rolling parallel direction when the average length of the contour curve element defined in JIS-B0601 measured with a stylus type surface roughness meter is Rsm on the copper foil surface (rolled surface) after final rolling. The ratio (RsmTD / RsmRD) between RsmRD and the value RsmTD measured in the direction perpendicular to the rolling needs to be 2.0 or more. When finish cold rolling (skin pass) is performed at the above-described low degree of processing, streaky irregularities along the rolling direction L are generated on the surface (rolled surface) as shown in FIG. In this case, if the unevenness along the rolling direction L is small, the unevenness along the rolling perpendicular direction n is large, and (RsmTD / RsmRD) is 2.0 or more, finish cold rolling (skin pass) is performed at a low workability. it is conceivable that.
When (RsmTD / RsmRD) is less than 2.0, the skin pass at low workability has not been performed or the skin pass is insufficient, and a work structure different from the rolling texture should be sufficiently formed on the outermost layer of the rolled copper foil. Is difficult. The upper limit of (RsmTD / RsmRD) is not particularly specified, but is usually about 3.5.
<加工組織>
そして、圧延銅箔の最表層の加工組織と、圧延銅箔内部の圧延集合組織との相違を、圧延銅箔の表面(圧延面)及び内部における長径20μm以下の結晶粒の面積率で規定する。
つまり、図1に示すように、200℃で0.5時間焼鈍後に、圧延銅箔表面(圧延面)Dの0.5mm四方内の領域Sにおいて、長径20μm以下の結晶粒が占める面積率を20%以上とし、さらに、圧延平行断面Cにおいて圧延方向長さ0.5mm(図1の符号ML)をSEM観察した場合に、銅箔厚み中心Oを跨ぎかつ長径が20μm以下である結晶粒が占める面積率を観察視野の20%以下とする。このように、圧延銅箔表面(圧延面)の結晶粒を圧延銅箔内部の結晶粒に比べて微細とする(長径20μmを超える粗大粒を少なくする)ことで、圧延銅箔をエッチングする際に多数の微細な結晶がランダムに溶解するので、粗大粒が選択的に溶解して直径20μm程度のくぼみが発生することが抑制される。
<Processing organization>
And the difference between the processed structure of the outermost layer of the rolled copper foil and the rolled texture inside the rolled copper foil is defined by the surface ratio (rolled surface) of the rolled copper foil and the area ratio of crystal grains having a major axis of 20 μm or less inside. .
That is, as shown in FIG. 1, after annealing at 200 ° C. for 0.5 hour, in the region S within 0.5 mm square of the rolled copper foil surface (rolled surface) D, the area ratio occupied by crystal grains having a major axis of 20 μm or less is 20% or more. Furthermore, when the length in the rolling direction of 0.5 mm (symbol ML in FIG. 1) is observed by SEM in the rolling parallel section C, the area ratio occupied by crystal grains straddling the copper foil thickness center O and having a major axis of 20 μm or less is 20% or less of the observation field. In this way, when the rolled copper foil is etched by making the grains on the rolled copper foil surface (rolled surface) finer than the grains inside the rolled copper foil (reducing coarse grains having a major axis exceeding 20 μm). In addition, since a large number of fine crystals are dissolved at random, it is possible to suppress the coarse particles from being selectively dissolved to generate a dent having a diameter of about 20 μm.
ここで、図1において、圧延(平行)方向をL、圧延直角方向(Lに直角な方向)をNとし、厚み方向をTとする。圧延平行断面Cは、圧延(平行)方向Lに平行で、圧延面に垂直な(Tに平行な)断面である。そして、観察視野Vは、圧延平行断面Cにおいて、(圧延銅箔の厚みt)×(圧延方向長さML)で表される矩形の領域である。又、銅箔厚み中心Oとは、圧延銅箔の厚みtの1/2となる厚み部分を通る線であり、圧延面に平行である。
長径が20μm以下の結晶粒が占める面積率は、以下のようにして求める。まず、観察視野Vにおいて、銅箔厚み中心Oを跨ぐ結晶粒を抽出すると、図1に示すように結晶粒g1〜g4の4個が抽出される。これら結晶粒g1〜g4のうち、長径が20μm以下の結晶粒は、g1、g2、g4である。従って、{(結晶粒g1、g2、g4の合計面積)/(観察視野Vの面積)}×100により、上記面積率が求められる。なお、観察視野Vの面積は、t×MLで表される。
Here, in FIG. 1, the rolling (parallel) direction is L, the rolling perpendicular direction (direction perpendicular to L) is N, and the thickness direction is T. The rolling parallel section C is a section parallel to the rolling (parallel) direction L and perpendicular to the rolling surface (parallel to T). The observation visual field V is a rectangular region represented by (rolled copper foil thickness t) × (rolling direction length ML) in the rolling parallel section C. Moreover, the copper foil thickness center O is a line passing through a thickness portion that is ½ of the thickness t of the rolled copper foil, and is parallel to the rolling surface.
The area ratio occupied by crystal grains having a major axis of 20 μm or less is determined as follows. First, in the observation visual field V, when crystal grains straddling the copper foil thickness center O are extracted, four crystal grains g1 to g4 are extracted as shown in FIG. Among these crystal grains g1 to g4, crystal grains having a major axis of 20 μm or less are g1, g2, and g4. Therefore, the area ratio is determined by {(total area of crystal grains g1, g2, g4) / (area of observation field of view V)} × 100. In addition, the area of the observation visual field V is represented by t × ML.
圧延銅箔表面(圧延面)の0.5mm四方内の領域Sにおいて、長径20μm以下の結晶粒が占める面積率(表面(圧延面)における長径20μm以下の結晶粒の面積率)が20%未満であるか、又は、銅箔厚み中心Oを跨ぎかつ長径が20μm以下である結晶粒が占める面積率(内部における長径20μm以下の結晶粒の面積率)が観察視野の20%を超えると、圧延銅箔表面(圧延面)の結晶粒が圧延銅箔内部の結晶粒に比べて十分に微細とならず、圧延銅箔をエッチングする際、表面(圧延面)の粗大粒が選択的に溶解して直径20μm程度のくぼみが発生する。
なお、上記した圧延銅箔のI(200)/I0(200)、表面(圧延面)及び内部における長径20μm以下の結晶粒の面積率は、圧延銅箔を200℃で0.5時間焼鈍した後の値である。そして、この焼鈍は、圧延銅箔と樹脂層とを積層して銅張積層板(CCL)を製造する工程において、積層時の熱処理を想定(シミュレート)したものであり、圧延銅箔はCCLの積層時の熱処理で再結晶し、I(200)/I0(200)、表面(圧延面)及び内部における長径20μm以下の結晶粒の面積率が上記範囲となる。
In the area S within 0.5 mm square of the rolled copper foil surface (rolled surface), the area ratio occupied by crystal grains having a major axis of 20 μm or less (area ratio of crystal grains having a major axis of 20 μm or less on the surface (rolled surface)) is less than 20%. If the area ratio occupied by crystal grains straddling the copper foil thickness center O and having a major axis of 20 μm or less (area ratio of crystal grains having a major axis of 20 μm or less inside) exceeds 20% of the observation field, rolled copper The crystal grains on the foil surface (rolled surface) are not sufficiently fine compared to the crystal grains inside the rolled copper foil, and when the rolled copper foil is etched, coarse grains on the surface (rolled surface) are selectively dissolved. An indentation with a diameter of about 20μm occurs.
In addition, I (200) / I0 (200) of the above-mentioned rolled copper foil, the surface ratio (rolled surface), and the area ratio of the crystal grains having a major axis of 20 μm or less are obtained after annealing the rolled copper foil at 200 ° C. for 0.5 hour. Value. And this annealing assumes the heat treatment at the time of lamination (simulation) in the process of laminating a rolled copper foil and a resin layer and manufacturing a copper clad laminated board (CCL). The area ratio of crystal grains having a major axis of 20 μm or less in the I (200) / I0 (200), surface (rolled surface) and inside is within the above range.
以上のように、(RsmTD/RsmRD)が2.0以上となるように低加工度で仕上げ冷間圧延(スキンパス)を行い、圧延銅箔の表面(圧延面)及び内部における長径20μm以下の結晶粒の面積率の差を上記のように規定することで、圧延銅箔をエッチングする際に多数の微細な結晶がランダムに溶解し、直径20μm程度のくぼみが発生することが抑制される。好ましくは、銅箔厚みの2〜5%をエッチングにより除去した後の銅箔の一方の表面(圧延面)において、表面(圧延面)の0.5mm四方を7視野観察したとき、長径が20μmを超える凹部が0.5個/mm2以下である。なお、銅箔を用いて製造されたCCLの場合、銅箔の片面には樹脂が積層され、この面はエッチングされない。従って、圧延銅箔の片面を2〜5%エッチングしたときの凹部を規定している。 As described above, finish cold rolling (skin pass) is performed at a low workability so that (RsmTD / RsmRD) is 2.0 or more, and the surface of the rolled copper foil (rolled surface) and the inside of the crystal grains with a major axis of 20 μm or less By defining the difference in area ratio as described above, it is possible to suppress the occurrence of a depression having a diameter of about 20 μm by randomly dissolving a large number of fine crystals when the rolled copper foil is etched. Preferably, on one surface (rolled surface) of the copper foil after removing 2 to 5% of the copper foil thickness by etching, when the 0.5 mm square of the surface (rolled surface) is observed in seven visual fields, the major axis is 20 μm. The number of recesses exceeds 0.5 / mm 2 . In addition, in the case of CCL manufactured using copper foil, resin is laminated | stacked on the single side | surface of copper foil, and this surface is not etched. Therefore, a concave portion is defined when one side of the rolled copper foil is etched by 2 to 5%.
次に、本発明の圧延銅箔の製造方法について説明する。まず、上記した成分組成の銅インゴットを鋳造し、熱間圧延を行う。その後、焼鈍と冷間圧延を繰り返し、圧延板を得る。この圧延板を焼鈍して再結晶させ,所定の厚みまで最終冷間圧延して箔を得る。このとき、圧延板(銅箔素材)を最終冷間圧延加工度97%以上で冷間圧延し、かつ最終冷間圧延の最終パスにおいて1パス加工度2%以上10%未満の冷間圧延を施す。最終冷間圧延の最終パスは、仕上げ圧延の最終パスに相当する。
最終冷間圧延の最終パスにおいて、1パス加工度を2%以上10%未満の低加工度とすることで、圧延銅箔表面(圧延面)の結晶粒を圧延銅箔内部の結晶粒に比べて微細とする(長径20μmを超える粗大粒を少なくする)ことができ、上記したように直径20μm程度のくぼみが発生することが抑制される。一方、最終冷間圧延の最終パスにおいて、1パス加工度が10%以上であると強加工になり過ぎ、圧延銅箔表面(圧延面)の結晶粒が圧延銅箔内部の結晶粒に比べて十分に微細とならず、圧延銅箔をエッチングする際、表面(圧延面)の粗大粒が選択的に溶解して直径20μm程度のくぼみが発生する。又、最終冷間圧延の最終パスにおいて、1パス加工度が2%未満であると、加工が不十分となり、圧延銅箔表面(圧延面)の結晶粒が圧延銅箔内部の結晶粒に比べて十分に微細とならない。
Next, the manufacturing method of the rolled copper foil of this invention is demonstrated. First, a copper ingot having the above-described component composition is cast and hot-rolled. Thereafter, annealing and cold rolling are repeated to obtain a rolled sheet. The rolled sheet is annealed and recrystallized, and finally cold-rolled to a predetermined thickness to obtain a foil. At this time, the rolled sheet (copper foil material) is cold-rolled at a final cold rolling degree of 97% or higher, and cold rolled at a final pass of the final cold rolling of 2% or higher and lower than 10%. Apply. The final pass of final cold rolling corresponds to the final pass of finish rolling.
In the final pass of final cold rolling, the grain size on the surface of the rolled copper foil (rolled surface) is compared with the grain size inside the rolled copper foil by reducing the degree of one-pass processing to 2% or more and less than 10%. Can be made fine (reducing coarse grains having a major axis exceeding 20 μm), and the occurrence of a depression having a diameter of about 20 μm is suppressed as described above. On the other hand, in the final pass of the final cold rolling, if the degree of processing of one pass is 10% or more, it becomes too strong and the crystal grains on the surface of the rolled copper foil (rolled surface) are larger than the crystal grains inside the rolled copper foil. When the rolled copper foil is not sufficiently fine, coarse grains on the surface (rolled surface) are selectively dissolved to generate a dent having a diameter of about 20 μm. In the final pass of the final cold rolling, if the degree of processing for one pass is less than 2%, the processing becomes insufficient, and the crystal grains on the surface of the rolled copper foil (rolled surface) are compared with the crystal grains inside the rolled copper foil. And not fine enough.
最終冷間圧延の最終パスにおいて1パス加工度2%以上10%未満の冷間圧延を行う方法は特に限定されず、一般的に用いられる圧延方法であれば、圧延油を用いた湿式圧延、圧延油を用いないドライ圧延のいずれでもよい。また、最終冷間圧延の最終パスは1パスでもよく、圧延する材料の性質や圧延機の性能に合わせて複数パス(最終パスとその前のパス)としてもよい。
なお、最終冷間圧延の加工度rは、r=(t0−t)/t0(t:圧延後の厚み,t0:圧延前の厚み)で定義される。
There is no particular limitation on the method of performing cold rolling at a final pass of the final cold rolling of 1 pass processing degree of 2% or more and less than 10%, and if it is a commonly used rolling method, wet rolling using rolling oil, Any of dry rolling without using rolling oil may be used. Further, the final pass of the final cold rolling may be one pass, and may be a plurality of passes (final pass and previous pass) in accordance with the properties of the material to be rolled and the performance of the rolling mill.
In addition, the workability r of final cold rolling is defined by r = (t 0 -t) / t 0 (t: thickness after rolling, t 0 : thickness before rolling).
まず、表1に記載の組成の銅インゴットを製造し、厚み10mmまで熱間圧延を行った。その後、焼鈍と冷間圧延を繰り返し、圧延板コイルを得た。この圧延板を750℃の連続焼鈍炉に通板し再結晶させた。その後、表1の厚みまで最終冷間圧延して銅箔を得た。なお、最終冷間圧延の最終パスの加工度を表1に示すように設定した。 First, a copper ingot having the composition shown in Table 1 was manufactured and hot-rolled to a thickness of 10 mm. Then, annealing and cold rolling were repeated to obtain a rolled plate coil. The rolled plate was passed through a continuous annealing furnace at 750 ° C. and recrystallized. Then, it finally cold-rolled to the thickness of Table 1, and obtained copper foil. In addition, the processing degree of the final pass of final cold rolling was set as shown in Table 1.
<Rsm>
得られた銅箔の表面(圧延面)を触針式表面粗さ計(小阪研究所製サーフコーダSE-3400)で測定し、JIS-B0601に規定する輪郭曲線要素の平均長さRsmを測定した。Rsmは、圧延方向(RsmRD)と、圧延直角方向(RsmTD)に沿ってそれぞれ測定し、それらの比(RsmTD/RsmRD)を算出した。
<Rsm>
Measure the surface (rolled surface) of the obtained copper foil with a stylus type surface roughness meter (Surfcoder SE-3400 manufactured by Kosaka Laboratories) and measure the average length Rsm of the contour curve element specified in JIS-B0601 did. Rsm was measured along the rolling direction (RsmRD) and the direction perpendicular to the rolling direction (RsmTD), and the ratio (RsmTD / RsmRD) was calculated.
<長径20μm以下の結晶粒が占める面積率>
得られた銅箔表面(圧延面)の3箇所につき、0.5mm四方の光学顕微鏡像を撮影し、撮影視野内に長径20μm以下の結晶粒が占める面積率を画像解析によって測定し、3箇所の平均値を算出した。なお、結晶粒の長径とは、結晶粒を取り囲む最小円(結晶粒の最小外接円)の直径を意味する。
同様に、圧延平行断面において圧延方向長さ0.5mmの領域(観察視野V)の3箇所につき、SEM(走査型電子顕微鏡)像を撮影し、銅箔厚み中心を跨ぎ長径が20μm以下である結晶粒を抽出した。そして、この結晶粒が観察視野に占める面積率を画像解析によって測定し、3箇所の平均値を算出した。結晶粒の長径は上記と同様に定義される。
<Area ratio occupied by crystal grains having a major axis of 20 μm or less>
An optical microscope image of 0.5 mm square was photographed at three locations on the surface of the obtained copper foil (rolled surface), and the area ratio occupied by crystal grains having a major axis of 20 μm or less in the field of view was measured by image analysis. The average value was calculated. The major axis of the crystal grain means the diameter of the smallest circle (the smallest circumscribed circle of the crystal grain) surrounding the crystal grain.
Similarly, SEM (scanning electron microscope) images were taken at three locations in the rolling parallel section of 0.5 mm in the rolling direction length (observation field of view V), and the major diameter was 20 μm or less across the copper foil thickness center. Grains were extracted. And the area ratio which this crystal grain occupied to the observation visual field was measured by image analysis, and the average value of three places was computed. The major axis of the crystal grain is defined as described above.
<200面の配向度>
得られた銅箔を200℃で0.5時間焼鈍後、圧延面のX線回折で求めた(200)面強度の積分値(I)を求めた。この値をあらかじめ測定しておいた微粉末銅(325mesh,水素気流中で300℃で1時間加熱してから使用)の(200)面強度の積分値(I0 )で割り、I(200)/I0(200)の値を計算した。なお、I(200)/I0(200)が50以上であれば、配向度の評価を良い(○)とし、50未満を×とした。I(200)/I0(200)が50以上であれば、立方晶が成長し、屈曲性が向上することが知られている。
<Orientation degree of 200 planes>
The obtained copper foil was annealed at 200 ° C. for 0.5 hour, and then the integral value (I) of (200) plane strength obtained by X-ray diffraction of the rolled surface was obtained. This value is divided by the integral value (I0) of the (200) plane strength of finely powdered copper (325 mesh, heated after heating at 300 ° C for 1 hour in a hydrogen stream), and I (200) / The value of I0 (200) was calculated. In addition, when I (200) / I0 (200) was 50 or more, the evaluation of the degree of orientation was good (◯), and less than 50 was rated as x. It is known that when I (200) / I0 (200) is 50 or more, cubic crystals grow and the flexibility is improved.
<エッチング後の銅箔表面(圧延面)の窪み>
得られた銅箔を200℃で0.5時間焼鈍後、液温30℃のエッチング液(ADEKA社製テックCL-8の20質量%溶液)に攪拌しながら2分間浸漬してエッチングし、洗浄後の表面(圧延面)を光学顕微鏡で観察した。0.5mm四方の観察面を7視野観察し、長径が20μmを超える窪み(凹部)が見られた場合を評価×とし、長径が20μmを超える凹部が見られなかった場合を評価○とした。なお、凹部の長径は、窪みの輪郭を取り囲む最小円(窪みの輪郭の最小外接円)の直径を意味する。
ここで、0.5mm四方の7視野につき、長径が20μmを超える凹部が1個見られた場合、この凹部は表面(圧延面)に0.57個/mm2存在すると計算される(=1/(0.5×0.5×7))。従って、上記評価が○の場合(つまり、長径が20μmを超える窪みが0個の場合)、長径が20μmを超える凹部が表面(圧延面)に0.5個/mm2以下(具体的には0個/mm2)となる。
一方、上記評価が×の場合、上述の計算により、凹部は表面(圧延面)に0.57個/mm2以上存在することになる。
<Indentation on copper foil surface (rolled surface) after etching>
The obtained copper foil was annealed at 200 ° C. for 0.5 hour, then immersed in an etching solution (20% by mass solution of TECHKA CL-8 manufactured by ADEKA) for 2 minutes while being etched, etched and washed. The surface (rolled surface) was observed with an optical microscope. Seven fields of observation of a 0.5 mm square observation surface were evaluated, and a case where a depression (concave portion) having a major axis exceeding 20 μm was observed was evaluated as x, and a case where a concave portion having a major axis exceeding 20 μm was not observed was evaluated as “Good”. The major axis of the recess means the diameter of the smallest circle that surrounds the contour of the recess (the minimum circumscribed circle of the contour of the recess).
Here, if one recess having a major axis exceeding 20 μm is seen for 7 fields of view of 0.5 mm square, it is calculated that 0.57 / mm 2 exists on the surface (rolled surface) (= 1 / (0.5 × 0.5 × 7)). Therefore, when the above evaluation is ○ (that is, when there are no dents whose major axis exceeds 20 μm), the number of concaves whose major axis exceeds 20 μm is 0.5 / mm 2 or less (specifically, 0) on the surface (rolling surface). / mm 2 ).
On the other hand, when the evaluation is x, the above-described calculation indicates that there are 0.57 or more recesses / mm 2 on the surface (rolled surface).
得られた結果を表1に示す。 The obtained results are shown in Table 1.
表1から明らかなように、最終冷間圧延の加工度を97%以上とし、(RsmTD/RsmRD)≧2.0となるよう、最終冷間圧延の最終パスの1パス加工度を2%以上10%未満に調整した各実施例の場合、200℃で0.5時間焼鈍後、表面(圧延面)の0.5mm四方内に長径20μm以下の結晶粒が占める面積率が20%以上であり、かつ圧延平行断面から圧延方向長さ0.5mmをSEM観察した場合に、銅箔厚み中心を跨ぐ結晶粒のうち、長径が20μm以下である結晶粒が占める面積率が20%以下となった。そして、200℃で0.5時間焼鈍後にエッチングしても、直径20μmを超える窪みが表面(圧延面)に発生しなかった。又、各実施例の場合、200℃で0.5時間焼鈍後にI(200)/I0(200)が50以上になった。 As is clear from Table 1, the final cold rolling work degree is 97% or more, and the final cold rolling final pass degree is 2% or more and 10% so that (RsmTD / RsmRD) ≧ 2.0. In the case of each example adjusted to less than, after annealing at 200 ° C. for 0.5 hour, the area ratio occupied by crystal grains having a major axis of 20 μm or less within 0.5 mm square of the surface (rolled surface) is 20% or more, and the rolling parallel section When the length in the rolling direction was 0.5 mm, the area ratio of the crystal grains having a major axis of 20 μm or less among the crystal grains straddling the copper foil thickness center was 20% or less. And even if it etched after annealing at 200 degreeC for 0.5 hour, the hollow exceeding a diameter of 20 micrometers did not generate | occur | produce on the surface (rolling surface). In each example, I (200) / I0 (200) was 50 or more after annealing at 200 ° C. for 0.5 hour.
最終冷間圧延の最終パスの1パス加工度を10%とした比較例1,3の場合、200℃で0.5時間焼鈍後、表面(圧延面)の0.5mm四方内に長径20μm以下の結晶粒が占める面積率が20%未満となった。そして、200℃で0.5時間焼鈍後の試料をエッチングすると、直径20μmを超える窪みが表面(圧延面)に発生した。なお、比較例1,3はそれぞれ最終厚みが異なるため、最終冷間圧延の最終パスより前の圧延パス配分が異なり、(RsmTD/RsmRD)の値が異なるものとなった。つまり、比較例3の場合、最終冷間圧延で最終パスまで10%以上の加工度で圧延し、かつ箔厚が薄いために最終パスでの油膜当量が大きくなり、粗さの異方性が小さくなったため、(RsmTD/RsmRD)の値が2未満になった。
最終冷間圧延の加工度を97%未満とした比較例2の場合、200℃で0.5時間焼鈍後、I(200)/I0(200)が50未満となり、配向度が劣った。
なお、図2は、比較例1の試料の表面(圧延面)の窪みの光学顕微鏡像を示す。直径20μmを超える窪みが表面に発生したことがわかる。
In Comparative Examples 1 and 3, where the final pass of the final cold rolling is 10%, after annealing at 200 ° C for 0.5 hour, the crystal grains with a major axis of 20μm or less within 0.5mm square of the surface (rolled surface) The area ratio occupied by became less than 20%. Then, when the sample after annealing at 200 ° C. for 0.5 hour was etched, a depression exceeding 20 μm in diameter was generated on the surface (rolled surface). Since Comparative Examples 1 and 3 had different final thicknesses, the distribution of rolling passes before the final pass of final cold rolling was different, and the values of (RsmTD / RsmRD) were different. That is, in the case of Comparative Example 3, the final cold rolling is performed at a working degree of 10% or more until the final pass, and the foil thickness is thin, so the oil film equivalent in the final pass is increased, and the roughness anisotropy is increased. Since it became smaller, the value of (RsmTD / RsmRD) became less than 2.
In the case of Comparative Example 2 in which the workability of the final cold rolling was less than 97%, after annealing at 200 ° C. for 0.5 hour, I (200) / I0 (200) was less than 50 and the degree of orientation was inferior.
FIG. 2 shows an optical microscope image of a depression on the surface (rolled surface) of the sample of Comparative Example 1. It can be seen that a depression exceeding 20 μm in diameter has occurred on the surface.
Claims (4)
200℃で0.5時間焼鈍後にI(200)/I0(200)が50以上であり、かつ触針式表面粗さ計で測定したJIS-B0601に規定する輪郭曲線要素の平均長さをRsmとしたとき、圧延平行方向に測定した値RsmRDと、圧延直角方向に測定した値RsmTDとの比(RsmTD/RsmRD)が2.0以上であり、
200℃で0.5時間焼鈍後に、表面(圧延面)の0.5mm四方内に長径20μm以下の結晶粒が占める面積率が20%以上であり、かつ圧延平行断面において圧延方向長さ0.5mmをSEM観察した場合に、銅箔厚み中心を跨ぎかつ長径が20μm以下である結晶粒が占める面積率が観察視野の20%以下である圧延銅箔。 (A) Tough pitch copper standardized to JIS-H3100 (C1100), (B) oxygen-free copper standardized to JIS-H3100 (C1020), (C) containing 100 to 500 ppm by mass of Sn as an additive element, and / or Containing 100 to 200 ppm by mass of Ag, and the balance is Sn, Ag, In, Ti, Zn, Zr, Fe, P, Ni, Si, Ag as the tough pitch copper or oxygen-free copper, or (D) additive element , Te, Cr, Nb, V contains a total of one or more elements of 20 to 500 ppm by mass, the balance consists of the tough pitch copper or the oxygen-free copper,
Rsm is the average length of contour curve elements specified in JIS-B0601 with I (200) / I0 (200) of 50 or more after annealing at 200 ° C for 0.5 hour and measured with a stylus type surface roughness meter When the ratio of the value RsmRD measured in the rolling parallel direction to the value RsmTD measured in the direction perpendicular to the rolling (RsmTD / RsmRD) is 2.0 or more,
After annealing at 200 ° C for 0.5 hour, the area ratio of the crystal grains with the major axis of 20μm or less in the 0.5mm square of the surface (rolled surface) is 20% or more, and the rolling parallel length of 0.5mm is observed by SEM In this case, the rolled copper foil has an area ratio occupied by crystal grains having a major axis of 20 μm or less straddling the copper foil thickness center and 20% or less of the observation field.
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