JP5745250B2 - 発光デバイス - Google Patents
発光デバイス Download PDFInfo
- Publication number
- JP5745250B2 JP5745250B2 JP2010234051A JP2010234051A JP5745250B2 JP 5745250 B2 JP5745250 B2 JP 5745250B2 JP 2010234051 A JP2010234051 A JP 2010234051A JP 2010234051 A JP2010234051 A JP 2010234051A JP 5745250 B2 JP5745250 B2 JP 5745250B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- emitting device
- film structure
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010410 layer Substances 0.000 claims description 103
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 17
- 239000012790 adhesive layer Substances 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000000889 atomisation Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
Landscapes
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099117667 | 2010-06-01 | ||
| TW099117667A TWI449210B (zh) | 2010-06-01 | 2010-06-01 | 發光元件 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011254061A JP2011254061A (ja) | 2011-12-15 |
| JP5745250B2 true JP5745250B2 (ja) | 2015-07-08 |
Family
ID=45417726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010234051A Active JP5745250B2 (ja) | 2010-06-01 | 2010-10-18 | 発光デバイス |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5745250B2 (zh) |
| TW (1) | TWI449210B (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104112805B (zh) * | 2014-07-16 | 2017-09-26 | 厦门乾照光电股份有限公司 | 一种具有防扩层的发光二极管及其制造方法 |
| TWI811725B (zh) * | 2021-07-06 | 2023-08-11 | 晶元光電股份有限公司 | 發光元件 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5336075B2 (ja) * | 2004-04-28 | 2013-11-06 | バーティクル，インク | 縦構造半導体装置 |
| JP4825003B2 (ja) * | 2005-12-28 | 2011-11-30 | ローム株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子製造方法 |
| JP2007258277A (ja) * | 2006-03-20 | 2007-10-04 | Matsushita Electric Works Ltd | 半導体発光素子 |
| TW200834969A (en) * | 2007-02-13 | 2008-08-16 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
| JP5326383B2 (ja) * | 2007-07-10 | 2013-10-30 | 豊田合成株式会社 | 発光装置 |
| TWI418056B (zh) * | 2007-11-01 | 2013-12-01 | Epistar Corp | 發光元件 |
| JP2009164423A (ja) * | 2008-01-08 | 2009-07-23 | Nichia Corp | 発光素子 |
| JP5057398B2 (ja) * | 2008-08-05 | 2012-10-24 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
-
2010
- 2010-06-01 TW TW099117667A patent/TWI449210B/zh active
- 2010-10-18 JP JP2010234051A patent/JP5745250B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011254061A (ja) | 2011-12-15 |
| TWI449210B (zh) | 2014-08-11 |
| TW201145561A (en) | 2011-12-16 |
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