JP5740551B2 - 光電構成素子およびその製造方法 - Google Patents

光電構成素子およびその製造方法 Download PDF

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Publication number
JP5740551B2
JP5740551B2 JP2012507683A JP2012507683A JP5740551B2 JP 5740551 B2 JP5740551 B2 JP 5740551B2 JP 2012507683 A JP2012507683 A JP 2012507683A JP 2012507683 A JP2012507683 A JP 2012507683A JP 5740551 B2 JP5740551 B2 JP 5740551B2
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layer
dielectric layer
metal
photoelectric component
thickness
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Expired - Fee Related
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JP2012507683A
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Japanese (ja)
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JP2012525692A (ja
JP2012525692A5 (OSRAM
Inventor
シュレンカー ティルマン
シュレンカー ティルマン
ペッツォルト ラルフ
ペッツォルト ラルフ
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Osram Oled GmbH
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Osram Oled GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2012507683A 2009-04-30 2010-04-21 光電構成素子およびその製造方法 Expired - Fee Related JP5740551B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102009019520 2009-04-30
DE102009019520.3 2009-04-30
DE102009022900.0A DE102009022900B4 (de) 2009-04-30 2009-05-27 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102009022900.0 2009-05-27
PCT/EP2010/055289 WO2010124979A1 (de) 2009-04-30 2010-04-21 Optoelektronisches bauelement und verfahren zu dessen herstellung

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015000285A Division JP2015130344A (ja) 2009-04-30 2015-01-05 光電構成素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2012525692A JP2012525692A (ja) 2012-10-22
JP2012525692A5 JP2012525692A5 (OSRAM) 2013-05-02
JP5740551B2 true JP5740551B2 (ja) 2015-06-24

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ID=42979234

Family Applications (2)

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JP2012507683A Expired - Fee Related JP5740551B2 (ja) 2009-04-30 2010-04-21 光電構成素子およびその製造方法
JP2015000285A Granted JP2015130344A (ja) 2009-04-30 2015-01-05 光電構成素子およびその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015000285A Granted JP2015130344A (ja) 2009-04-30 2015-01-05 光電構成素子およびその製造方法

Country Status (7)

Country Link
US (2) US8680563B2 (OSRAM)
EP (1) EP2425037A1 (OSRAM)
JP (2) JP5740551B2 (OSRAM)
KR (1) KR20120042747A (OSRAM)
CN (1) CN102439197B (OSRAM)
DE (1) DE102009022900B4 (OSRAM)
WO (1) WO2010124979A1 (OSRAM)

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DE102009022900B4 (de) * 2009-04-30 2026-02-26 Pictiva Displays International Limited Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102010040839B4 (de) * 2010-09-15 2013-10-17 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektronsichen Bauelements und elektronisches Bauelement
US20130242533A1 (en) * 2011-09-12 2013-09-19 Appotronics Corporation Limited Method and apparatus for a color filter
WO2013133264A1 (ja) * 2012-03-06 2013-09-12 独立行政法人科学技術振興機構 多重量子井戸型太陽電池及び多重量子井戸型太陽電池の製造方法
KR101387918B1 (ko) * 2012-04-30 2014-04-23 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조 방법
FR2992098A1 (fr) * 2012-06-19 2013-12-20 Commissariat Energie Atomique Dispositif optoelectronique organique et son procede de fabrication.
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US9570662B2 (en) * 2012-07-10 2017-02-14 Osram Opto Semiconductors Gmbh Method of encapsulating an optoelectronic device and light-emitting diode chip
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JP2014149994A (ja) * 2013-02-01 2014-08-21 Denso Corp 表示装置の製造方法
CN104009180A (zh) * 2013-02-26 2014-08-27 海洋王照明科技股份有限公司 有机电致发光器件及其制备方法
US20160043247A1 (en) * 2013-03-15 2016-02-11 Arkema Inc. Nitrogen-containing transparent conductive oxide cap layer composition
JP6119408B2 (ja) * 2013-05-09 2017-04-26 ソニー株式会社 原子層堆積装置
EP2918701A1 (en) * 2014-03-14 2015-09-16 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Method of manufacturing a stacked organic light emitting diode, stacked OLED device, and apparatus for manufacturing thereof
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DE102014111346B4 (de) * 2014-08-08 2022-11-03 Pictiva Displays International Limited Optoelektronische Bauelementevorrichtung und Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung
US9490453B2 (en) * 2014-10-06 2016-11-08 Winbond Electronics Corp. Quasi-crystal organic light-emitting display panel and method for simulating optical efficiency of the same
DE102015112681B4 (de) * 2015-08-03 2025-08-28 Pictiva Displays International Limited Organisches optoelektronisches Bauelement und Verfahren zum Herstellen eines organischen optoelektronischen Bauelements
DE102016103059A1 (de) * 2016-02-22 2017-08-24 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
CN106784350A (zh) * 2016-12-23 2017-05-31 京东方科技集团股份有限公司 一种有机电致发光显示面板及其制作方法、显示装置
CN108123050B (zh) * 2017-12-04 2020-05-12 武汉华美晨曦光电有限责任公司 一种以交流驱动的白光oled器件
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Also Published As

Publication number Publication date
KR20120042747A (ko) 2012-05-03
JP2012525692A (ja) 2012-10-22
US20120119253A1 (en) 2012-05-17
DE102009022900B4 (de) 2026-02-26
WO2010124979A1 (de) 2010-11-04
CN102439197A (zh) 2012-05-02
DE102009022900A1 (de) 2010-11-18
CN102439197B (zh) 2015-04-01
EP2425037A1 (de) 2012-03-07
US20140117345A1 (en) 2014-05-01
US9130189B2 (en) 2015-09-08
US8680563B2 (en) 2014-03-25
JP2015130344A (ja) 2015-07-16

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