JP5725501B2 - 検査装置 - Google Patents

検査装置 Download PDF

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Publication number
JP5725501B2
JP5725501B2 JP2011035751A JP2011035751A JP5725501B2 JP 5725501 B2 JP5725501 B2 JP 5725501B2 JP 2011035751 A JP2011035751 A JP 2011035751A JP 2011035751 A JP2011035751 A JP 2011035751A JP 5725501 B2 JP5725501 B2 JP 5725501B2
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JP
Japan
Prior art keywords
defect
image
defects
silicon carbide
differential interference
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JP2011035751A
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English (en)
Japanese (ja)
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JP2012174896A5 (enExample
JP2012174896A (ja
Inventor
寛和 関
寛和 関
賢次 是村
賢次 是村
允 鳥澤
允 鳥澤
小林　正典
正典 小林
寿幸 轟
寿幸 轟
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Lasertec Corp
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Lasertec Corp
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Priority to JP2011035751A priority Critical patent/JP5725501B2/ja
Priority to US13/073,130 priority patent/US20110242312A1/en
Publication of JP2012174896A publication Critical patent/JP2012174896A/ja
Publication of JP2012174896A5 publication Critical patent/JP2012174896A5/ja
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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2011035751A 2010-03-30 2011-02-22 検査装置 Active JP5725501B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011035751A JP5725501B2 (ja) 2011-02-22 2011-02-22 検査装置
US13/073,130 US20110242312A1 (en) 2010-03-30 2011-03-28 Inspection system and inspection method

Applications Claiming Priority (1)

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JP2011035751A JP5725501B2 (ja) 2011-02-22 2011-02-22 検査装置

Related Child Applications (1)

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JP2012106055A Division JP5114808B2 (ja) 2012-05-07 2012-05-07 検査装置及び欠陥検査方法

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JP2012174896A JP2012174896A (ja) 2012-09-10
JP2012174896A5 JP2012174896A5 (enExample) 2014-03-27
JP5725501B2 true JP5725501B2 (ja) 2015-05-27

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JP2011035751A Active JP5725501B2 (ja) 2010-03-30 2011-02-22 検査装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10429315B2 (en) 2017-07-18 2019-10-01 Samsung Electronics Co., Ltd. Imaging apparatus and imaging method

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9551672B2 (en) 2013-12-18 2017-01-24 Lasertec Corporation Defect classifying method and optical inspection apparatus for silicon carbide substrate
CN108701623B (zh) * 2015-11-05 2022-10-04 米朋克斯株式会社 基板评价方法
CN108169228A (zh) * 2017-11-28 2018-06-15 中国工程物理研究院电子工程研究所 一种准确辨别碳化硅单晶位错类型的方法
US11017520B2 (en) * 2018-09-04 2021-05-25 Kla Corporation Multi-wavelength interferometry for defect classification
JP7056515B2 (ja) * 2018-10-30 2022-04-19 株式会社デンソー 炭化珪素半導体装置の製造方法
JP6914990B2 (ja) * 2019-05-09 2021-08-04 アンリツ株式会社 物品検査装置及び物品検査方法
JP7750648B2 (ja) * 2020-10-23 2025-10-07 レーザーテック株式会社 測定装置、及び測定方法
CN112446857A (zh) * 2020-11-06 2021-03-05 长江存储科技有限责任公司 缺陷图像自动分类标记系统、建立方法及分类标记方法
JP7669772B2 (ja) * 2021-04-15 2025-04-30 富士電機株式会社 炭化珪素半導体装置の製造方法
CN114280009A (zh) * 2021-12-31 2022-04-05 北京天科合达半导体股份有限公司 一种碳化硅晶片的综合缺陷检测装置及方法
JP2024177762A (ja) * 2023-06-12 2024-12-24 浜松ホトニクス株式会社 干渉観察装置及び干渉観察方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6514779B1 (en) * 2001-10-17 2003-02-04 Cree, Inc. Large area silicon carbide devices and manufacturing methods therefor
JP4357355B2 (ja) * 2004-05-07 2009-11-04 株式会社日立ハイテクノロジーズ パターン検査方法及びその装置
US7554656B2 (en) * 2005-10-06 2009-06-30 Kla-Tencor Technologies Corp. Methods and systems for inspection of a wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10429315B2 (en) 2017-07-18 2019-10-01 Samsung Electronics Co., Ltd. Imaging apparatus and imaging method

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JP2012174896A (ja) 2012-09-10

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