JP5722297B2 - 発光ダイオードパッケージ及びそれに用いられるレンズモジュール - Google Patents
発光ダイオードパッケージ及びそれに用いられるレンズモジュール Download PDFInfo
- Publication number
- JP5722297B2 JP5722297B2 JP2012265048A JP2012265048A JP5722297B2 JP 5722297 B2 JP5722297 B2 JP 5722297B2 JP 2012265048 A JP2012265048 A JP 2012265048A JP 2012265048 A JP2012265048 A JP 2012265048A JP 5722297 B2 JP5722297 B2 JP 5722297B2
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- Prior art keywords
- light emitting
- emitting diode
- lens
- concave
- diode chip
- Prior art date
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- 230000003287 optical effect Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 description 20
- 238000005286 illumination Methods 0.000 description 7
- 238000007789 sealing Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Liquid Crystal (AREA)
Description
10 基板
11 第一表面
12 第二表面
20 回路構造
21 第一電極
22 第二電極
30 発光ダイオードチップ
31 金属線
40 レンズモジュール
41 凹レンズ
411 第一凹面
412 第二凹面
413 側面
42 凸レンズ
421 第一凸面
422 第二凸面
43 収容空間
50 封止体
60 インナーレンズ
Claims (4)
- 発光ダイオードチップと、該発光ダイオードチップの上方に覆設されるレンズモジュールとを備える発光ダイオードパッケージにおいて、該レンズモジュールは、発光ダイオードチップの上方に覆設される凹レンズと、該凹レンズの発光ダイオードチップから離れる表面に貼設され且つ半径方向に沿うサイズが該凹レンズの半径方向に沿うサイズより小さい凸レンズとを備え、前記凹レンズ及び凸レンズの光軸は、前記発光ダイオードチップの中心軸と同一直線上にあり、
前記凹レンズは、発光ダイオードチップに近い第一凹面と、該第一凹面に対向する第二凹面とを備え、第一凹面は、発光ダイオードチップから離れる方向へ凹み、且つ収容空間を形成し、発光ダイオードチップは、該収容空間に収容され、第二凹面は、発光ダイオードチップの方向へ凹み、
前記第一凹面の曲率半径と前記第二凹面の曲率半径とが等しいことを特徴とする発光ダイオードパッケージ。 - 前記凸レンズは、前記凹レンズの第二凹面の中央部に設置され、第一凸面と、該第一凸面に対向する第二凸面とを備え、該第一凸面は、凹レンズの第二凹面に貼設され且つ該第二凹面と同じ曲率半径を有し、該第二凸面は、発光ダイオードチップから離れる方向へ突出することを特徴とする請求項1に記載の発光ダイオードパッケージ。
- 前記発光ダイオードパッケージは、発光ダイオードチップの上方に覆設されるインナーレンズをさらに備え、該インナーレンズは、凹レンズと発光ダイオードチップとの間に設置され、且つ発光ダイオードチップから離れる方向へ突出していることを特徴とする請求項2に記載の発光ダイオードパッケージ。
- 凹レンズ及び凸レンズを備えるレンズモジュールにおいて、該凸レンズは、該凹レンズの表面に貼設され且つ半径方向に沿うサイズが該凹レンズの半径方向に沿うサイズより小さく、前記凹レンズ及び凸レンズの光軸は、同一直線上にあり、
前記凹レンズは、第一凹面と、該第一凹面に対向し前記凸レンズが設けられた第二凹面とを備え、
前記第一凹面の曲率半径と前記第二凹面の曲率半径とが等しいことを特徴とするレンズモジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110408497.7 | 2011-12-09 | ||
CN201110408497.7A CN103165798B (zh) | 2011-12-09 | 2011-12-09 | 发光二极管封装结构及其透镜 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013123051A JP2013123051A (ja) | 2013-06-20 |
JP5722297B2 true JP5722297B2 (ja) | 2015-05-20 |
Family
ID=48571173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012265048A Active JP5722297B2 (ja) | 2011-12-09 | 2012-12-04 | 発光ダイオードパッケージ及びそれに用いられるレンズモジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US8759860B2 (ja) |
JP (1) | JP5722297B2 (ja) |
CN (1) | CN103165798B (ja) |
TW (1) | TW201324878A (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI582344B (zh) * | 2013-08-05 | 2017-05-11 | 鴻海精密工業股份有限公司 | 透鏡及使用該透鏡的光源裝置 |
US10145529B2 (en) * | 2014-05-30 | 2018-12-04 | Lumileds Llc | Optical lens package for automotive lighting application |
CN104134743A (zh) * | 2014-06-17 | 2014-11-05 | 京东方光科技有限公司 | Led封装结构及封装方法、显示装置、照明装置 |
US11237459B2 (en) | 2019-06-12 | 2022-02-01 | Avigilon Corporation | Camera comprising a light-refracting apparatus for dispersing light |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59226381A (ja) * | 1983-06-08 | 1984-12-19 | 株式会社東芝 | 発光表示装置 |
JPH01287973A (ja) | 1988-05-13 | 1989-11-20 | Takiron Co Ltd | ドットマトリックス発光表示体 |
WO2005027576A2 (en) * | 2003-09-08 | 2005-03-24 | Nanocrystal Lighting Corporation | Light efficient packaging configurations for led lamps using high refractive index encapsulants |
JP2005175048A (ja) * | 2003-12-09 | 2005-06-30 | Sanken Electric Co Ltd | 半導体発光装置 |
KR100754169B1 (ko) * | 2004-11-24 | 2007-09-03 | 삼성전자주식회사 | 측 발광 디바이스 및 이를 광원으로 사용하는 백라이트유닛 및 이를 채용한 액정표시장치 |
JP2007102139A (ja) * | 2004-12-03 | 2007-04-19 | Sony Corp | 光取出しレンズ、発光素子組立体、面状光源装置、及び、カラー液晶表示装置組立体 |
DE102005020908A1 (de) * | 2005-02-28 | 2006-08-31 | Osram Opto Semiconductors Gmbh | Beleuchtungsvorrichtung |
JP4725176B2 (ja) * | 2005-04-25 | 2011-07-13 | パナソニック電工株式会社 | 光学部品及び光学部品を用いた照明器具 |
JP4029918B2 (ja) * | 2005-09-09 | 2008-01-09 | 松下電工株式会社 | Led照明装置 |
KR100649758B1 (ko) | 2005-11-15 | 2006-11-27 | 삼성전기주식회사 | 균일한 광량 분포를 위한 렌즈 및 이를 이용한 발광 장치 |
JP2008130487A (ja) * | 2006-11-24 | 2008-06-05 | Morikawa Seisakusho:Kk | 照明器具用集光レンズ及びそれを用いた照明器具 |
KR101396658B1 (ko) * | 2006-12-29 | 2014-05-19 | 엘지디스플레이 주식회사 | 광원 큐브 및 이를 이용한 평면 광원 장치 및 액정 표시장치 |
US20090159915A1 (en) * | 2007-12-19 | 2009-06-25 | Shaul Branchevsky | Led insert module and multi-layer lens |
JP4993616B2 (ja) * | 2008-03-05 | 2012-08-08 | 株式会社エンプラス | 発光装置、面光源装置、及び表示装置 |
JP5301899B2 (ja) * | 2008-07-04 | 2013-09-25 | 株式会社朝日ラバー | 光源装置及びそれを用いた照明器具 |
JP2010157653A (ja) * | 2008-12-26 | 2010-07-15 | Makoto Saito | 光学レンズ |
US8039862B2 (en) * | 2009-03-10 | 2011-10-18 | Nepes Led Corporation | White light emitting diode package having enhanced white lighting efficiency and method of making the same |
US8602605B2 (en) * | 2010-01-07 | 2013-12-10 | Seoul Semiconductor Co., Ltd. | Aspherical LED lens and light emitting device including the same |
US20120305973A1 (en) * | 2010-02-08 | 2012-12-06 | Yoshihiko Chosa | Light-emitting device and surface light source device using the same |
US10500770B2 (en) * | 2010-03-02 | 2019-12-10 | So-Semi Technologies, Llc | LED packaging with integrated optics and methods of manufacturing the same |
JP5010010B2 (ja) * | 2010-04-16 | 2012-08-29 | フェニックス電機株式会社 | 発光装置 |
JP5496757B2 (ja) * | 2010-04-16 | 2014-05-21 | 交和電気産業株式会社 | 照明装置 |
KR20120131955A (ko) * | 2011-05-27 | 2012-12-05 | 삼성전자주식회사 | 발광장치 |
-
2011
- 2011-12-09 CN CN201110408497.7A patent/CN103165798B/zh active Active
- 2011-12-16 TW TW100146936A patent/TW201324878A/zh unknown
-
2012
- 2012-08-27 US US13/596,028 patent/US8759860B2/en active Active
- 2012-12-04 JP JP2012265048A patent/JP5722297B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2013123051A (ja) | 2013-06-20 |
TW201324878A (zh) | 2013-06-16 |
US20130146911A1 (en) | 2013-06-13 |
CN103165798B (zh) | 2015-11-25 |
CN103165798A (zh) | 2013-06-19 |
US8759860B2 (en) | 2014-06-24 |
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