JP5709404B2 - 固体撮像装置およびその駆動方法 - Google Patents

固体撮像装置およびその駆動方法 Download PDF

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Publication number
JP5709404B2
JP5709404B2 JP2010108786A JP2010108786A JP5709404B2 JP 5709404 B2 JP5709404 B2 JP 5709404B2 JP 2010108786 A JP2010108786 A JP 2010108786A JP 2010108786 A JP2010108786 A JP 2010108786A JP 5709404 B2 JP5709404 B2 JP 5709404B2
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Japan
Prior art keywords
pixel
transistor
reset
control electrode
imaging device
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Expired - Fee Related
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JP2010108786A
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English (en)
Japanese (ja)
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JP2011238768A5 (OSRAM
JP2011238768A (ja
Inventor
篠原　真人
真人 篠原
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Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2010108786A priority Critical patent/JP5709404B2/ja
Priority to PCT/JP2011/002548 priority patent/WO2011142104A1/en
Priority to US13/696,902 priority patent/US9197832B2/en
Priority to CN201180022660.4A priority patent/CN102884785B/zh
Priority to DE112011101626T priority patent/DE112011101626T5/de
Publication of JP2011238768A publication Critical patent/JP2011238768A/ja
Publication of JP2011238768A5 publication Critical patent/JP2011238768A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2010108786A 2010-05-10 2010-05-10 固体撮像装置およびその駆動方法 Expired - Fee Related JP5709404B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010108786A JP5709404B2 (ja) 2010-05-10 2010-05-10 固体撮像装置およびその駆動方法
PCT/JP2011/002548 WO2011142104A1 (en) 2010-05-10 2011-05-06 Solid-state image pickup apparatus and drive method therefor
US13/696,902 US9197832B2 (en) 2010-05-10 2011-05-06 Solid-state image pickup apparatus and drive method therefor
CN201180022660.4A CN102884785B (zh) 2010-05-10 2011-05-06 固态图像拾取装置及其驱动方法
DE112011101626T DE112011101626T5 (de) 2010-05-10 2011-05-06 Festkörperbildaufnahmevorrichtug und Ansteuerverfahren dafür

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010108786A JP5709404B2 (ja) 2010-05-10 2010-05-10 固体撮像装置およびその駆動方法

Publications (3)

Publication Number Publication Date
JP2011238768A JP2011238768A (ja) 2011-11-24
JP2011238768A5 JP2011238768A5 (OSRAM) 2013-06-27
JP5709404B2 true JP5709404B2 (ja) 2015-04-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010108786A Expired - Fee Related JP5709404B2 (ja) 2010-05-10 2010-05-10 固体撮像装置およびその駆動方法

Country Status (5)

Country Link
US (1) US9197832B2 (OSRAM)
JP (1) JP5709404B2 (OSRAM)
CN (1) CN102884785B (OSRAM)
DE (1) DE112011101626T5 (OSRAM)
WO (1) WO2011142104A1 (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202633312U (zh) * 2012-01-11 2012-12-26 格科微电子（上海）有限公司 图像传感器及源跟随器
JP2015177034A (ja) * 2014-03-14 2015-10-05 キヤノン株式会社 固体撮像装置、その製造方法、及びカメラ
US9456157B2 (en) * 2014-11-25 2016-09-27 Semiconductor Components Industries, Llc Image sensor pixels having p-channel source follower transistors and increased photodiode charge storage capacity
US9773832B2 (en) 2014-12-10 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6218799B2 (ja) * 2015-01-05 2017-10-25 キヤノン株式会社 撮像素子及び撮像装置
JP6924703B2 (ja) * 2015-03-05 2021-08-25 ダートマス カレッジ イメージセンサ画素のゲートレスリセット
US9716852B2 (en) 2015-04-03 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Broadcast system
KR20170061602A (ko) 2015-11-26 2017-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2019146316A1 (ja) * 2018-01-24 2019-08-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
CN119562624B (zh) * 2025-01-24 2025-05-16 合肥晶合集成电路股份有限公司 像素单元及驱动方法、图像传感器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5210434A (en) * 1983-07-02 1993-05-11 Canon Kabushiki Kaisha Photoelectric converter with scanning circuit
JPH084131B2 (ja) 1987-01-29 1996-01-17 キヤノン株式会社 光電変換装置
JPH08125868A (ja) 1994-10-19 1996-05-17 Canon Inc 画像処理装置及び方法
US5933188A (en) * 1994-10-19 1999-08-03 Canon Kabushiki Kaisha Photoelectric conversion apparatus and method with reset
US6552323B2 (en) * 2000-12-06 2003-04-22 Eastman Kodak Company Image sensor with a shared output signal line
JP2004104116A (ja) * 2002-08-21 2004-04-02 Canon Inc 撮像装置
CN1225897C (zh) * 2002-08-21 2005-11-02 佳能株式会社 摄像装置
JP4916101B2 (ja) * 2004-09-01 2012-04-11 キヤノン株式会社 光電変換装置、固体撮像装置及び固体撮像システム
JP4752447B2 (ja) * 2005-10-21 2011-08-17 ソニー株式会社 固体撮像装置およびカメラ
JP4361072B2 (ja) * 2006-06-15 2009-11-11 日本テキサス・インスツルメンツ株式会社 固体撮像装置及びその製造方法
JP4425950B2 (ja) * 2007-06-01 2010-03-03 シャープ株式会社 固体撮像装置および電子情報機器
WO2009031301A1 (ja) * 2007-09-05 2009-03-12 Tohoku University 固体撮像素子
US7745773B1 (en) * 2008-04-11 2010-06-29 Foveon, Inc. Multi-color CMOS pixel sensor with shared row wiring and dual output lines
JP2010108786A (ja) 2008-10-30 2010-05-13 Yazaki Corp 大電流用ヒューズ
US8130302B2 (en) * 2008-11-07 2012-03-06 Aptina Imaging Corporation Methods and apparatus providing selective binning of pixel circuits

Also Published As

Publication number Publication date
CN102884785B (zh) 2016-02-24
CN102884785A (zh) 2013-01-16
US9197832B2 (en) 2015-11-24
JP2011238768A (ja) 2011-11-24
DE112011101626T5 (de) 2013-03-21
US20130056619A1 (en) 2013-03-07
WO2011142104A1 (en) 2011-11-17

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