JP5707682B2 - エピタキシャルシリコンウェーハの製造方法 - Google Patents

エピタキシャルシリコンウェーハの製造方法 Download PDF

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Publication number
JP5707682B2
JP5707682B2 JP2009192450A JP2009192450A JP5707682B2 JP 5707682 B2 JP5707682 B2 JP 5707682B2 JP 2009192450 A JP2009192450 A JP 2009192450A JP 2009192450 A JP2009192450 A JP 2009192450A JP 5707682 B2 JP5707682 B2 JP 5707682B2
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Japan
Prior art keywords
polishing
silicon wafer
abrasive grains
aqueous solution
epitaxial
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JP2009192450A
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English (en)
Japanese (ja)
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JP2011042536A (ja
JP2011042536A5 (https=
Inventor
弘徳 西村
弘徳 西村
晋一 緒方
晋一 緒方
俊介 御厨
俊介 御厨
高石　和成
和成 高石
雄一 中吉
雄一 中吉
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Sumco Corp
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Sumco Corp
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Priority to JP2009192450A priority Critical patent/JP5707682B2/ja
Priority to TW099127773A priority patent/TWI498954B/zh
Priority to DE112010003353.6T priority patent/DE112010003353B4/de
Priority to PCT/JP2010/064076 priority patent/WO2011021691A1/ja
Priority to US13/390,764 priority patent/US8728942B2/en
Priority to KR1020127000974A priority patent/KR101286171B1/ko
Publication of JP2011042536A publication Critical patent/JP2011042536A/ja
Publication of JP2011042536A5 publication Critical patent/JP2011042536A5/ja
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  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2009192450A 2009-08-21 2009-08-21 エピタキシャルシリコンウェーハの製造方法 Active JP5707682B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009192450A JP5707682B2 (ja) 2009-08-21 2009-08-21 エピタキシャルシリコンウェーハの製造方法
TW099127773A TWI498954B (zh) 2009-08-21 2010-08-19 磊晶矽晶圓的製造方法
PCT/JP2010/064076 WO2011021691A1 (ja) 2009-08-21 2010-08-20 エピタキシャルシリコンウェーハの製造方法
US13/390,764 US8728942B2 (en) 2009-08-21 2010-08-20 Method for producing epitaxial silicon wafer
DE112010003353.6T DE112010003353B4 (de) 2009-08-21 2010-08-20 Verfahren zur Herstellung von epitaktischen Siliziumwafern
KR1020127000974A KR101286171B1 (ko) 2009-08-21 2010-08-20 에피택셜 실리콘 웨이퍼의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009192450A JP5707682B2 (ja) 2009-08-21 2009-08-21 エピタキシャルシリコンウェーハの製造方法

Publications (3)

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JP2011042536A JP2011042536A (ja) 2011-03-03
JP2011042536A5 JP2011042536A5 (https=) 2012-03-29
JP5707682B2 true JP5707682B2 (ja) 2015-04-30

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106463403B (zh) 2014-06-02 2020-05-05 胜高股份有限公司 硅晶片及其制造方法
JP6206360B2 (ja) 2014-08-29 2017-10-04 株式会社Sumco シリコンウェーハの研磨方法
JP6418174B2 (ja) * 2016-02-03 2018-11-07 株式会社Sumco シリコンウェーハの片面研磨方法
US10584412B2 (en) * 2016-03-08 2020-03-10 Ii-Vi Delaware, Inc. Substrate comprising a layer of silicon and a layer of diamond having an optically finished (or a dense) silicon-diamond interface
JP6635088B2 (ja) * 2017-04-24 2020-01-22 信越半導体株式会社 シリコンウエーハの研磨方法
KR102287116B1 (ko) * 2017-08-31 2021-08-05 가부시키가이샤 사무코 실리콘 웨이퍼의 양면 연마 방법
CN112652526A (zh) * 2020-12-14 2021-04-13 西安奕斯伟硅片技术有限公司 一种硅片抛光方法和硅片
CN113967872A (zh) * 2021-09-16 2022-01-25 北京航空航天大学 一种用于单晶硅晶圆的激光辅助抛光方法
JP7801886B2 (ja) * 2021-12-17 2026-01-19 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハ表面の結晶欠陥検出方法
CN116110776B (zh) * 2023-03-09 2024-07-23 通威太阳能（安徽）有限公司 微晶片的返工处理方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09306881A (ja) * 1996-05-15 1997-11-28 Kobe Steel Ltd シリコン用研磨液組成物および研磨方法
JP3578263B2 (ja) * 1999-06-22 2004-10-20 三菱住友シリコン株式会社 シリコンウェーハの研磨方法及びこの方法により研磨されたシリコンウェーハ
DE19938340C1 (de) * 1999-08-13 2001-02-15 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe

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JP2011042536A (ja) 2011-03-03

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