JP5705971B2 - 導電性パターンによって浮いた領域を備える太陽電池及びその製造方法 - Google Patents
導電性パターンによって浮いた領域を備える太陽電池及びその製造方法 Download PDFInfo
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- JP5705971B2 JP5705971B2 JP2013508531A JP2013508531A JP5705971B2 JP 5705971 B2 JP5705971 B2 JP 5705971B2 JP 2013508531 A JP2013508531 A JP 2013508531A JP 2013508531 A JP2013508531 A JP 2013508531A JP 5705971 B2 JP5705971 B2 JP 5705971B2
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- 238000000034 method Methods 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000463 material Substances 0.000 claims description 52
- 238000002161 passivation Methods 0.000 claims description 46
- 210000004027 cell Anatomy 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 44
- 230000001681 protective effect Effects 0.000 claims description 29
- 239000007769 metal material Substances 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 210000004692 intercellular junction Anatomy 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 230000035699 permeability Effects 0.000 description 4
- 229910000676 Si alloy Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/1868—Passivation
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Description
− 基板と、
− 導電性集電層(electrically conductive collection layer)と、
− 前記基板から前記集電層を離す導電性パッシベーション膜と。
− 集電層の中に浮いた領域(suspended area)を形成し、且つ、接続パターンを形成するように、この犠牲領域を分解するステップと。
Claims (8)
- − 太陽電池接合を備える基板(1)と、
− 導電性集電層(3)と、
− 前記基板(1)の裏面から前記集電層(3)を離す導電性パッシベーション膜(2)と、
を備える太陽電池であって、
導電性接続パターン(4)が、前記集電層(3)の領域を前記パッシベーション膜(2)に対して浮いた状態に保持し、
前記集電層(3)は保護パターン(5)に部分的に覆われており、前記接続パターン(4)と前記保護パターン(5)とは、前記集電層(3)の各サイドにおいて互いに向かい合うように配置されており、
前記集電層(3)は多孔質材料により形成され、且つ、前記保護パターンにより部分的に充填されている、
ことを特徴とする太陽電池。 - − 太陽電池接合を備える基板(1)と、
− 導電性集電層(3)と、
− 前記基板(1)の裏面から前記集電層(3)を離す導電性パッシベーション膜(2)と、
を備える太陽電池であって、
導電性接続パターン(4)が、前記集電層(3)の領域を前記パッシベーション膜(2)に対して浮いた状態に保持し、
− シリコン基板(1)と、
− p型にドープされたシリコンから形成されたパッシベーション膜(2)と、
− アルミニウムの集電層(3)と、
− 酸化シリコンから形成された複数の保護パターン(5)と、
− シリコン−アルミニウム合金から形成された接続パターン(4)と、
を備える、
ことを特徴とする太陽電池。 - 前記パッシベーション膜(2)は半導体材料から形成される、ことを特徴とする請求項1又は2に記載の太陽電池。
- 半導体材料と金属材料との合金から形成された接続パターン(4)を備える、ことを特徴とする請求項1乃至3の1つに記載の太陽電池。
- 前記集電層(3)はアルミニウム又はアルミニウムから形成された領域を含むものから形成される、ことを特徴とする請求項1乃至3の1つに記載の太陽電池。
- − 太陽電池接続が設けられており、且つ、導電性パッシベーション膜(2)と犠牲材料領域と導電性集電層(3)とにより裏面が覆われている基板(1)を与えるステップと、
− 前記集電層(3)の中に浮いた領域を形成し、且つ、前記パッシベーション膜(2)と前記集電層(3)との間に接続パターン(4)を形成するように、前記犠牲領域をエッチングするステップと、
を備えることを特徴とする太陽電池の製造方法。 - 前記犠牲領域は、アルミニウムとシリコンとの合金から形成され、前記集電層(3)の透過性領域を通じて塩酸溶液によりエッチングされる、ことを特徴とする請求項6に記載の方法。
- 前記集電層(3)と前記保護パターン(5)とはスクリーンプリントにより堆積される、ことを特徴とする請求項7に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR10/01948 | 2010-05-06 | ||
FR1001948A FR2959870B1 (fr) | 2010-05-06 | 2010-05-06 | Cellule photovoltaique comportant une zone suspendue par un motif conducteur et procede de realisation. |
PCT/FR2011/000264 WO2011138519A2 (fr) | 2010-05-06 | 2011-04-29 | Cellule photovoltaïque comportant une zone suspendue par un motif conducteur et procédé de réalisation |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013526072A JP2013526072A (ja) | 2013-06-20 |
JP5705971B2 true JP5705971B2 (ja) | 2015-04-22 |
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Application Number | Title | Priority Date | Filing Date |
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JP2013508531A Expired - Fee Related JP5705971B2 (ja) | 2010-05-06 | 2011-04-29 | 導電性パターンによって浮いた領域を備える太陽電池及びその製造方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20130037101A1 (ja) |
EP (1) | EP2567407B1 (ja) |
JP (1) | JP5705971B2 (ja) |
KR (1) | KR20130073916A (ja) |
CN (1) | CN102884636A (ja) |
BR (1) | BR112012028093A2 (ja) |
ES (1) | ES2459315T3 (ja) |
FR (1) | FR2959870B1 (ja) |
WO (1) | WO2011138519A2 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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FR2959870B1 (fr) * | 2010-05-06 | 2012-05-18 | Commissariat Energie Atomique | Cellule photovoltaique comportant une zone suspendue par un motif conducteur et procede de realisation. |
US9722105B2 (en) * | 2014-03-28 | 2017-08-01 | Sunpower Corporation | Conversion of metal seed layer for buffer material |
KR101616178B1 (ko) * | 2014-04-01 | 2016-05-13 | 고려대학교 산학협력단 | 태양열 흡수체의 제조방법 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4315097A (en) * | 1980-10-27 | 1982-02-09 | Mcdonnell Douglas Corporation | Back contacted MIS photovoltaic cell |
JP2999867B2 (ja) * | 1991-11-07 | 2000-01-17 | シャープ株式会社 | 太陽電池およびその製造方法 |
US5641362A (en) * | 1995-11-22 | 1997-06-24 | Ebara Solar, Inc. | Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell |
US6180869B1 (en) * | 1997-05-06 | 2001-01-30 | Ebara Solar, Inc. | Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
JP2000138386A (ja) * | 1998-11-04 | 2000-05-16 | Shin Etsu Chem Co Ltd | 太陽電池の製造方法およびこの方法で製造された太陽電池 |
US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
AUPR719801A0 (en) * | 2001-08-23 | 2001-09-13 | Pacific Solar Pty Limited | Glass beads coating process |
US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
JP2005340362A (ja) * | 2004-05-25 | 2005-12-08 | Sharp Corp | 太陽電池セルおよび太陽電池モジュール |
WO2006003830A1 (ja) * | 2004-07-01 | 2006-01-12 | Toyo Aluminium Kabushiki Kaisha | ペースト組成物およびそれを用いた太陽電池素子 |
US20060130891A1 (en) * | 2004-10-29 | 2006-06-22 | Carlson David E | Back-contact photovoltaic cells |
EP1763086A1 (en) * | 2005-09-09 | 2007-03-14 | Interuniversitair Micro-Elektronica Centrum | Photovoltaic cell with thick silicon oxide and silicon nitride passivation and fabrication method |
JP2006310368A (ja) * | 2005-04-26 | 2006-11-09 | Shin Etsu Handotai Co Ltd | 太陽電池の製造方法及び太陽電池 |
JP4481869B2 (ja) * | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 |
US20070169806A1 (en) * | 2006-01-20 | 2007-07-26 | Palo Alto Research Center Incorporated | Solar cell production using non-contact patterning and direct-write metallization |
US8575474B2 (en) * | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
US20080092944A1 (en) * | 2006-10-16 | 2008-04-24 | Leonid Rubin | Semiconductor structure and process for forming ohmic connections to a semiconductor structure |
WO2008115814A2 (en) * | 2007-03-16 | 2008-09-25 | Bp Corporation North America Inc. | Solar cells |
KR20090095314A (ko) * | 2008-03-05 | 2009-09-09 | 삼성전자주식회사 | 비정질막의 결정화 방법 및 이를 적용한 박막 태양전지 및박막 태양 전지의 제조 방법 |
DE102008017312B4 (de) * | 2008-04-04 | 2012-11-22 | Universität Stuttgart | Verfahren zur Herstellung einer Solarzelle |
DE102008024053A1 (de) * | 2008-05-16 | 2009-12-17 | Deutsche Cell Gmbh | Punktkontakt-Solarzelle |
US20100096011A1 (en) * | 2008-10-16 | 2010-04-22 | Qualcomm Mems Technologies, Inc. | High efficiency interferometric color filters for photovoltaic modules |
FR2959870B1 (fr) * | 2010-05-06 | 2012-05-18 | Commissariat Energie Atomique | Cellule photovoltaique comportant une zone suspendue par un motif conducteur et procede de realisation. |
-
2010
- 2010-05-06 FR FR1001948A patent/FR2959870B1/fr not_active Expired - Fee Related
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2011
- 2011-04-29 ES ES11722846.0T patent/ES2459315T3/es active Active
- 2011-04-29 BR BR112012028093A patent/BR112012028093A2/pt not_active IP Right Cessation
- 2011-04-29 WO PCT/FR2011/000264 patent/WO2011138519A2/fr active Application Filing
- 2011-04-29 CN CN2011800226962A patent/CN102884636A/zh active Pending
- 2011-04-29 US US13/641,721 patent/US20130037101A1/en not_active Abandoned
- 2011-04-29 EP EP11722846.0A patent/EP2567407B1/fr not_active Not-in-force
- 2011-04-29 JP JP2013508531A patent/JP5705971B2/ja not_active Expired - Fee Related
- 2011-04-29 KR KR1020127031920A patent/KR20130073916A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
FR2959870A1 (fr) | 2011-11-11 |
EP2567407A2 (fr) | 2013-03-13 |
EP2567407B1 (fr) | 2014-03-19 |
ES2459315T3 (es) | 2014-05-09 |
KR20130073916A (ko) | 2013-07-03 |
WO2011138519A3 (fr) | 2012-05-10 |
FR2959870B1 (fr) | 2012-05-18 |
WO2011138519A2 (fr) | 2011-11-10 |
JP2013526072A (ja) | 2013-06-20 |
CN102884636A (zh) | 2013-01-16 |
US20130037101A1 (en) | 2013-02-14 |
BR112012028093A2 (pt) | 2016-08-02 |
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