CN109906516B - 具有区分开的p型和n型区架构的太阳能电池 - Google Patents
具有区分开的p型和n型区架构的太阳能电池 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 239000002019 doping agent Substances 0.000 claims description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 229920005591 polysilicon Polymers 0.000 claims description 23
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 57
- 230000008569 process Effects 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 238000000926 separation method Methods 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 239000006117 anti-reflective coating Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 239000011888 foil Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000873 masking effect Effects 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 238000011065 in-situ storage Methods 0.000 description 5
- 238000000608 laser ablation Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000011112 process operation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
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- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
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- 238000007650 screen-printing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 aluminum regions) Chemical compound 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
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- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
本发明描述了制造具有区分开的P型和N型区架构的太阳能电池发射极区的方法以及所得的太阳能电池。在某个示例中,太阳能电池可以包括具有光接收表面和背表面的基板。第一导电类型的第一掺杂区,其中所述第一掺杂区设置在所述背表面的第一部分中。第一薄介电层,所述第一薄介电层设置在所述基板的所述背表面上方,其中所述第一薄介电层的一部分设置在所述第一导电类型的所述第一掺杂区上方。第一半导体层,所述第一半导体层设置在所述第一薄介电层上方。第二导电类型的第二掺杂区,所述第二掺杂区在所述第一半导体层中,其中所述第二掺杂区设置在所述背表面的第二部分上方。
Description
背景技术
光伏(PV)电池(常称为太阳能电池)是用于将太阳辐射转化为电能的装置。一般来讲,照射在太阳能电池基板表面上并进入基板内的太阳辐射在基板主体中形成电子和空穴对。电子和空穴对迁移至基板中的p型掺杂区和n型掺杂区,从而在掺杂区之间形成电压差。将掺杂区连接到太阳能电池上的导电区,以将电流从电池引导至外部电路。当将PV电池组合在诸如PV模块的阵列中时,从所有的PV电池收集的电能可以按串联和并联布置加以组合,以提供具有某一电压和电流的电源。
效率是太阳能电池的重要特性,因其直接与太阳能电池发电能力有关。同样,制备太阳能电池的效率直接与此类太阳能电池的成本效益有关。因此,提高太阳能电池效率的技术或提高制造太阳能电池效率的技术是普遍需要的。本公开的一些实施例允许通过提供制造太阳能电池结构的新工艺而提高太阳能电池的制造效率。本公开的一些实施例允许通过提供新型太阳能电池结构来提高太阳能电池效率。
附图说明
图1为根据一些实施例的流程图,该流程图列出对应于图2-10的太阳能电池的制造方法中的操作。
图2-9示出了根据一些实施例的太阳能电池的制造中各个阶段的剖视图。
图10示出了根据一些实施例的由图1-9的方法形成的示例性太阳能电池的剖视图。
具体实施方式
以下具体实施方式在本质上只是说明性的,而并非意图限制本申请的主题的实施例或此类实施例的用途。如本文所用,词语“示例性”意指“用作示例、实例或举例说明”。本文描述为示例性的任何实施方式未必理解为相比其他实施方式是优选的或有利的。此外,并不意图受前述技术领域、背景技术、发明内容或以下具体实施方式中提出的任何明示或暗示的理论的约束。
本说明书包括提及“一个实施例”或“某个实施例”。短语“在一个实施例中”或“在某个实施例中”的出现不一定是指同一实施例。特定的特征、结构或特性可以任何与本公开一致的合适方式加以组合。
术语。以下段落提供存在于本公开(包括所附权利要求书)中术语的定义和/或语境:
“包括”。该术语是开放式的。如在所附权利要求书中所用,该术语并不排除其他结构或步骤。
“配置为”。各个单元或部件可描述或声明成“配置为”执行一项或多项任务。在此类语境下,“配置为”用于通过指示所述单元/部件包括在操作期间执行一项或多项那些任务的结构而暗示结构。因此,可以说是将所述单元/部件配置成即使当指定的单元/部件目前不在操作(例如,未开启/激活)时也可执行任务。详述某一单元/电路/部件“配置为”执行一项或多项任务明确地意在对该单元/部件而言不援用35U.S.C.§112第六段。
“第一”、“第二”等。如本文所用,这些术语用作其之后的名词的标记,而并不暗示任何类型的顺序(例如,空间、时间和逻辑等)。例如,提及“第一”掺杂区不一定意味着该掺杂区在某一序列中;相反,术语“第一”用于区分该掺杂区与太阳能电池的另一掺杂区(例如,“第二”掺杂区)。在一个示例中,第一掺杂区可为P型掺杂区,而第二掺杂区可为N型掺杂区。在一些示例中,第一掺杂区可以设置在半导体基板的一部分中(例如,太阳能电池的硅基板)。在一个示例中,第二掺杂区可以设置在半导体层中(例如,多晶硅层、非晶硅层等),该半导体层设置在半导体基板上方。
“基于”。如本文所用,该术语用于描述影响确定结果的一个或多个因素。该术语并不排除可影响确定结果的另外因素。也就是说,确定结果可以仅基于那些因素或至少部分地基于那些因素。考虑短语“基于B确定A”。尽管B可以是影响A的确定结果的因素,但这样的短语并不排除A的确定结果还基于C。在其他实例中,A可以仅基于B来确定。
“耦接”—以下描述是指元件或节点或结构特征“耦接”在一起。如本文所用,除非另外明确指明,否则“耦接”意指一个元件/节点/特征直接或间接连接至另一个元件/节点/特征(或直接或间接与其连通),并且不一定是机械连接。
“阻止”—如本文所用,阻止用于描述减小影响或使影响降至最低。当部件或特征描述为阻止行为、运动或条件时,它完全可以彻底地防止某种结果或后果或未来的状态。另外,“阻止”还可以指减少或减小可能会发生的某种后果、性能和/或效应。因此,当部件、元件或特征称为阻止结果或状态时,它不一定完全防止或消除该结果或状态。
此外,以下描述中还仅为了参考的目的使用了某些术语,因此这些术语并非意图进行限制。例如,诸如“上部”、“下部”、“上方”和“下方”之类的术语是指附图中提供参考的方向。诸如“正面”、“背面”、“后面”、“侧面”、“外侧”和“内侧”之类的术语描述部件的某些部分在一致但任意的参照系内的取向和/或位置,通过参考描述所讨论的部件的文字和相关的附图可以清楚地了解所述取向和/或位置。此类术语可包括上面具体提及的词语、它们的衍生词语以及类似意义的词语。
在以下描述中,给出了许多具体细节,诸如具体的操作,以便提供对本公开的实施例的透彻理解。对本领域的技术人员将显而易见的是,可在没有这些具体细节的情况下实践本公开的实施例。在其他实例中,没有详细地描述熟知的技术,以避免不必要地使本公开的实施例难以理解。
本文描述了制造具有区分开的P型和N型区架构的太阳能电池发射极区的方法,以及所得太阳能电池。在下面的描述中,阐述了诸如具体的工艺流程操作的许多具体细节,以便提供对本公开实施例的透彻理解。对本领域的技术人员将显而易见的是,可在没有这些具体细节的情况下实践本公开的实施例。在其他实例中,没有详细地描述熟知的制造技术,诸如平版印刷和图案化技术,以避免不必要地使本公开的实施例难以理解。此外,应当理解在图中示出的多种实施例是例证性的展示并且未必按比例绘制。
本发明公开了太阳能电池。在一个实施例中,背面接触太阳能电池包括具有光接收表面和背表面的基板。在某个实施例中,第一导电类型的第一掺杂区设置在背表面的第一部分中。在一个实施例中,第一薄介电层设置在基板的背表面上方,其中第一薄介电层的一部分设置在第一导电类型的第一掺杂区上方。在某个实施例中,第一导电率可为P型或N型。在某个示例中,第一薄介电层可为隧道氧化物。在某个实施例中,第一半导体层设置在第一薄介电层上方,其中第一半导体层的一部分设置在第一导电类型的第一掺杂区上方。在一个示例中,第一半导体层可为多晶硅层。在某个实施例中,第二导电类型的第二掺杂区设置在第一半导体层中,其中第二掺杂区设置在背表面的第二部分上方。在一个实施例中,第一导电触点设置在第一掺杂区上方,而第二导电触点设置在第二掺杂区上方。
现在转到图1,提出了根据一些实施例的流程图100,该流程图列出对应于图2-10的太阳能电池的制造方法200中的操作。在各种实施例中,图1的方法可包括与图示相比额外的(或更少)的框。例如,在一些实施例中,在框104处,不需要将半导体基板的背表面的暴露区纹理化。
图2-4提供了对应于流程图100的操作102的在半导体基板的背表面的第一部分中形成第一掺杂区的示例性方法。尽管在图2-4中提出了一种方法中的若干步骤(例如,掩模和蚀刻工艺),但应当了解,可以使用其他方法来形成第一掺杂区。
再次参考图2,根据一些实施例,可以在半导体基板210上方形成第一掺杂物层208。
参考图2,在一个实施例中,半导体基板210可为硅基板。在一些实施例中,可对硅基板进行清洗、抛光、平整化和/或薄化或以其他方式加工。在某个实施例中,半导体基板210可为单晶硅基板或多晶硅基板。在某个实施例中,硅基板可为N型硅基板或P型硅基板。在某个示例中,半导体基板可为单晶硅基板,诸如块体单晶N型掺杂硅基板。然而,应当理解,基板210可以是设置在整个太阳能电池基板上的层,诸如多晶硅层。在某个实施例中,基板210可具有正面202和背面204,其中正面202与背面204相对。在一个实施例中,正面202可称为光接收表面202,并且背面204可称为背表面204。在某个实施例中,基板可称为半导体基板210。
参考图2,在某个实施例中,可以在沉积工艺中形成第一掺杂物层208。在某个示例中,可使用化学气相沉积工艺来形成第一掺杂物层208。在一个示例中,形成第一掺杂物层208可以包括使硼或磷沉积。
参考图3,根据一些实施例,在某个实施例中,可以将图2的掺杂物层208图案化以形成第一掺杂物区209。在一个实施例中,将图2的第一掺杂物层图案化可包括光刻或丝网印刷掩模工艺。在一个示例中,可以执行掩模工艺,之后执行随后的蚀刻工艺以将第一掺杂物层208图案化。在某个实施例中,可以在半导体基板210的背表面204的第一部分216上方形成第一掺杂物区209。在某个实施例中,第一掺杂物区209可包括诸如硼或磷的掺杂物。在某个实施例中,可以在第一掺杂物区209上方形成无掺杂的电介质。在某个示例中,形成第一掺杂物区可包括使无掺杂的电介质沉积在第一掺杂物区209上方。在一个示例中,设置在第一掺杂物区209上方的无掺杂的电介质可以阻止将掺杂物驱入第一掺杂物区209(例如,从沉积在第一掺杂物区209上方的第二掺杂物区)。在一个实施例中,图案化可以形成半导体基板210的暴露区214,其中暴露区214形成在半导体基板210的背表面204的第二部分218上方。在某个实施例中,可使用激光烧蚀工艺(例如,直接写入)来将图2的第一掺杂物层208图案化。
参考图4,在某个实施例中,根据一些实施例,可以执行加热工艺以在半导体基板210中形成第一掺杂区217。在一个实施例中,加热220可以将掺杂物从第一掺杂物层208驱动到半导体基板210的背表面204的第一部分216中,例如参考图2和图3。在某个实施例中,加热可包括进行热工艺(例如,在烘箱中加热半导体基板)。在一些实施例中,图4的加热是可选的,不需要包括在内。
尽管图2-4示出了形成第一掺杂区217的示例性方法,但可以执行其他方法和/或工艺。在某个示例中,第一掺杂区209可以直接沉积为图案,例如,与预成形掩模和随后的蚀刻工艺形成对比,如图2和图3所示。
参考图5和流程图100的对应操作104,根据一些实施例,可以将半导体基板210的背表面204上的暴露区214纹理化224。在某个实施例中,可以在半导体基板210的背表面204的第二部分218上方形成纹理化表面224。在某个示例中,可执行纹理化工艺以形成纹理化表面224。在某个实施例中,可使用基于氢氧化物的湿法蚀刻剂来形成纹理化表面224的至少一部分和/或将半导体基板210的暴露部分214纹理化。纹理化表面可为具有规则或不规则形状的表面,其用于散射入射光、减少从太阳能电池200的光接收表面和/或暴露表面反射离开的光量。在相同或类似工艺中,还可将基板210的光接收表面(例如,图3和图4的212)纹理化222,如图5所示。然而,应当理解,可从工艺流程中省略背表面224的纹理化。在某个示例中,不需要将图3和图4的暴露区214纹理化。
参考图6和流程图100的对应操作106,根据一些实施例,可在半导体基板210的背表面204上形成第一薄介电层230。在某个实施例中,第一薄介电层230可在氧化工艺中形成并且可为薄氧化物层诸如隧穿介电层(例如,氧化硅)。在一个实施例中,可在沉积工艺中形成第一薄介电层230。在某个实施例中,第一薄介电层230为薄氧化物层或硅氧氮化物层。在某个实施例中,第一薄介电层230可具有大约2纳米或更小的厚度。在某个实施例中,可在第一掺杂区217上方形成第一薄介电层230的部分231。在一个实施例中,第一薄介电层230可以与纹理化表面(例如,图4的224)共形,如图6所描绘。在某个实施例中,可以在用于形成第一薄介电层230的相同或类似的工艺操作中,在半导体基板210的光接收表面204上形成对应的第二薄介电层226,如图6所描绘。在某个实施例中,第二薄介电层226可以与纹理化表面(例如,图4的222)共形,如图6所描绘。在某个实施例中,第二薄介电层226为隧道介电层(例如,氧化硅)。
参考图7和流程图100的对应操作108,可以在第一薄介电层230上方形成第二半导体层232。在某个实施例中,可以在第一掺杂区217上方形成第一半导体层232的部分235。在某个实施例中,第一半导体层232可为多晶硅层。在一个示例中,可以在第一薄介电层230上方形成多晶硅层,例如,第一半导体层232。在一个实施例中,第一半导体层232(例如,多晶硅层)通过原位掺杂、后沉积注入或其组合加以掺杂以具有导电类型(例如,P型或N型导电性)。在某个示例中,第一半导体层232可为使用原位掺杂工艺形成的N型多晶硅层。在另一实施例中,第一半导体层232可为非晶硅层诸如由a-Si:H表示的氢化硅层,其在沉积非晶硅层之后,用第一导电类型(例如,N型或P型导电性)的掺杂物进行注入。在某个实施例中,对于多晶硅层或非晶硅层中的任一者而言,如果可以执行后沉积注入,则通过使用离子束注入或等离子体浸没注入执行该注入。在一个此实施例中,可使用阴影掩模进行注入。在特定实施例中,第一半导体层的导电类型可为N型(例如,使用磷杂质原子形成)。
在某个实施例中,可以在用于形成第一半导体层232的相同或类似的工艺操作中,在半导体基板210的光接收表面202上形成对应的第二半导体层228,如图7所描绘。在一个实施例中,第二半导体层228可为多晶硅层或非晶硅层。在某个示例中,第二半导体层228可为多晶硅层。
另外,尽管未示出,但可以在太阳能电池200的正面202和/或背面204上形成抗反射(ARC)层。在某个示例中,可以在第一半导体层232上形成背抗反射涂层(BARC)层,诸如氮化硅层。在类似的示例中,可以在太阳能电池的正面202上方设置抗反射涂层(ARC)层诸如氮化硅层。在一些实施例中,第一半导体层232可为背面抗反射涂层(BARC)。
参考图8和流程图100的对应操作110,根据一些实施例,可以在第一半导体层232中形成第二导电类型的第二掺杂区244。在某个实施例中,可以执行加热工艺240以在第一半导体层232中形成第二掺杂区244。在一个此实施例中,随后可以对第一半导体层232进行退火以形成多晶硅层。在某个示例中,图7的第一半导体层232可为非晶硅层,并且在随后的退火工艺之后,可以形成多晶硅层。在特定实施例中,第二导电类型(例如,第二掺杂区244的第二导电类型)可为N型。在某个示例中,多晶硅层通过原位掺杂、后沉积注入或它们的组合加以掺杂以具有第二导电类型。在一个实施例中,可以在半导体基板210的第二部分218上方形成第二导电类型的第二掺杂区244。在另一实施例(未示出)中,可以在第一半导体层232上方形成第二掺杂物层(例如,包括磷),并且加热240可以将掺杂物从第二掺杂物层驱动到第一半导体层232中以形成第二导电类型的第二掺杂层区244。在某个实施例中,加热240可包括执行热工艺(例如,在烘箱中加热半导体基板)。在加热和/或掺杂之后,在某个实施例中,可以在第一掺杂区217上方形成第一半导体层232的部分245。
在一个实施例中,第二半导体层244使用原位掺杂工艺、后沉积注入或其组合加以掺杂以具有导电类型(例如,P型或N型导电性)。在某个示例中,第一半导体层232和/或第二掺杂区244可为使用原位掺杂工艺形成的N型多晶硅。
尽管如图所示,图4和图8的加热步骤是分开的,但在另一实施例中,可以使用相同的加热步骤来形成第一掺杂区217和第二掺杂区244。在某个示例中,不需要执行图4的加热220,并且图8的加热240相反可以将掺杂物从第一掺杂物区209驱动到第一部分(例如,图2-4中的216)中以形成第一掺杂区217并且还加热第一半导体层232以形成第二掺杂区244(例如,加热非晶硅层以形成多晶硅层)。
参考图9和流程图100的对应操作112,根据一些实施例,可在金属层217上方形成接触开口。在某个实施例中,可以穿过第一掺杂区209形成接触开口216,如图所示,因此,可以在接触开口246内形成第一导电触点250(例如,图10中所示)。在某个示例中,可通过激光烧蚀和/或通过掩模和蚀刻工艺等等其他工艺形成接触开口246。在某个实施例中,接触开口246允许导电触点(下面的图10中的250)和第一掺杂区217之间的电连接。在一个示例中,可以使用激光器来烧蚀第一半导体层244的部分245,随后,可以执行湿法化学蚀刻工艺来去除第一薄介电层230和第一掺杂区209的部分以形成接触开口246。
在某个实施例中,根据一些实施例,可以在第一掺杂区217上方穿过半导体层232的部分245形成分离区253。在某个示例中,可通过激光烧蚀和/或通过掩模和蚀刻工艺等等其他工艺形成分离区253。在某个实施例中,分离区253允许导电触点(下面的图10中的250)和第二掺杂区244之间的电绝缘和/或电分离。在一个示例中,可以使用激光器来烧蚀第一半导体层244的部分245,并且随后,可以执行湿法化学蚀刻工艺以去除半导体层232的部分以形成分离区253。在一些实施例中,可以在相同的工艺步骤中(例如,相同的激光烧蚀)中和/或通过掩模和蚀刻工艺步骤形成分离区253和接触开口246。在某个实施例中,形成分离区253是可选的,其中不需要形成分离区253。
参考图10和流程图100的对应操作114,可以在第一掺杂区217上方形成第一导电触点250,并且可以在第二掺杂区244上方形成第二导电触点252。在某个实施例中,形成第一导电触点250和第二导电触点252可包括执行一个或多个金属化工艺。在某个示例中,形成第一导电触点250和第二导电触点252可以包括:形成金属晶种层;在金属晶种层上方电镀另一金属层;以及执行掩模和蚀刻工艺以将第一导电触点250与第二导电触点252隔离。在某个实施例中,金属晶种层可以是沉积的和/或印刷的金属层。在一个示例中,金属晶种层可以是通过物理气相沉积工艺或热蒸发工艺沉积在半导体基板210上的金属层。在一个示例中,形成第一导电触点250和第二导电触点252可以包括:将导电箔置于在金属晶种层上方;将导电箔接合到金属晶种层;以及将第一导电触点250与第二导电触点252隔离(例如,经由激光烧蚀工艺)。在某个示例中,可将铝(例如,铝箔)置于金属晶种层上方。在某个实施例中,将金属箔置于金属晶种层上方可包括执行压缩工艺,以将金属箔置于金属晶种层上方。在一些实施例中,无需形成金属晶种层,其中可将金属箔直接置于第一掺杂区217和/或第二掺杂区244上。在某个实施例中,第一导电触点250和第二导电触点252可包括铝(例如,铝区)、铝/硅、镍、铜、钛、钨和/或它们的合金等等。在某个示例中,可以通过毯式沉积、通过印刷技术(例如,丝网印刷、喷墨印刷和/或旋涂)、电镀、热压缩等其他金属化技术来形成第一导电触点250和第二导电触点252。
在某个示例中,图10示出了根据一些实施例的由图1-9的方法形成的太阳能电池200的剖视图。在某个实施例中,太阳能电池200可包括具有光接收表面202和背表面204的半导体基板210。在某个实施例中,半导体基板210可为硅基板。在某个实施例中,硅基板可为N型硅基板或P型硅基板。在某个示例中,半导体基板210可为单晶硅基板,诸如块体单晶N型掺杂硅基板。在一个实施例中,可以将第一导电类型的第一掺杂区217设置在半导体基板210的一部分中。在一个具体实施例中,第一导电类型为P型(例如,使用硼杂质原子形成)。在一个实施例中,将第一薄介电层230设置在半导体基板210的背表面204上方,其中第一薄介电层230的一部分231设置在第一导电类型的第一掺杂区217上方。在某个示例中,第一薄介电层可为隧道氧化物。在某个实施例中,将第一半导体层232设置在第一薄介电层230上方,其中第一半导体层244的部分245设置在第一掺杂区217上方。在一个实施例中,第一半导体层232可为多晶硅层或非晶硅层。在某个示例中,第一半导体层包括多晶硅。在某个实施例中,可以将第二不同导电类型的第二掺杂区244设置在第二半导体层242中,其中第二掺杂区244设置在半导体基板210的第二部分218上方。在一个具体实施例中,第二导电类型为N型(例如,使用磷原子形成)。在某个实施例中,第一导电性可为正,并且第二导电性可为负。在一个实施例中,第一导电类型可为P型,并且第二导电类型可为N型。在某个实施例中,将第一导电触点250设置在第一掺杂区217上方。在某个实施例中,接触开口(例如,图9中所示的接触开口246)可以允许第一导电触点250和第一掺杂区217之间的电连接。在某个实施例中,分离区253允许第一导电触点250和第二掺杂区244之间的电绝缘和/或电分离。在一个实施例中,分离区253是可选的,其中不需要形成分离区253。在某个实施例中,第一导电触点250和第二导电触点252可包括电镀金属。在一个示例中,第一导电触点250和第二导电触点252可包括铜、锡和镍等等其他金属。在一些实施例中,第一导电触点250和第二导电触点252可包括导电箔。在某个示例中,第一导电触点250和第二导电触点252可包括铝或铝箔。
在某个实施例中,可以将纹理化区224设置在半导体基板的背表面204上方。在一个实施例中,可以将纹理化区224设置在半导体基板210的背表面204的第二部分218上。纹理化表面可为具有规则或不规则形状的表面,其用于散射入射光、减少从太阳能电池200的光接收表面和/或暴露表面反射离开的光量。在相同或类似工艺中,还可将基板210的光接收表面202纹理化222,如图5所描绘。
在某个实施例中,可以将对应的第二薄介电层226设置在半导体基板210的光接收表面204上。在某个示例中,第二薄介电层226可为隧道氧化物。在某个实施例中,可以在用于形成第一半导体层232的相同或类似的工艺操作中,在半导体基板210的光接收表面202上形成对应的第二半导体层228,如图7所描绘。在一个实施例中,第二半导体层228可为多晶硅层或非晶硅层。在某个示例中,第二半导体层228包括多晶硅。
尽管未描绘,但可以在太阳能电池200的正面202和/或背面204上形成抗反射(ARC)层。在某个示例中,可以在第一半导体层232上形成背面抗反射涂层(BARC)层,诸如氮化硅层。在类似的示例中,可以在太阳能电池的正面202上方设置抗反射涂层(ARC)层诸如氮化硅层。
描述了制造具有区分开的P型区和N型区架构的太阳能电池发射极区的方法,以及所得的太阳能电池。在某个示例中,太阳能电池可以包括具有光接收表面和背表面的基板。太阳能电池可以包括第一导电类型的第一掺杂区,其中第一掺杂区在背表面的第一部分中。在某个示例中,太阳能电池可以包括第一薄介电层,该第一薄介电层设置在基板的背表面上方,其中第一薄介电层的一部分设置在第一导电类型的第一掺杂区上方。太阳能电池可以包括第一半导体层,该第一半导体层设置在第一薄介电层上方。太阳能电池可以包括第二导电类型的第二掺杂区,该第二掺杂区在第一半导体层中,其中第二掺杂区设置在背表面的第二部分上方。而且,太阳能电池可以包括设置在第一掺杂区上方的第一导电触点和设置在第二掺杂区上方的第二导电触点。
一种制造太阳能电池的方法可包括在基板的背表面的第一部分中形成第一导电类型的第一掺杂区。该方法可以包括在基板的背表面上方形成第一薄介电层,其中第一薄介电层的一部分形成在第一导电类型的第一掺杂区上方。该方法还可以包括在第一薄介电层上方形成第一半导体层。该方法可以包括在第一半导体层中形成第二导电类型的第二掺杂区,其中第二掺杂区设置在基板的背表面的第二部分上方。该方法可以包括在第一掺杂区上方形成第一导电触点和在第二掺杂区上方形成第二导电触点。
尽管上面已经描述了具体实施例,但即使相对于特定的特征仅描述了单个实施例,这些实施例也并非旨在限制本公开的范围。除非另有说明,否则本公开中所提供的特征的示例旨在为例证性的而非限制性的。以上描述旨在涵盖将对本领域的技术人员显而易见的具有本公开的有益效果的那些替代形式、修改形式和等效形式。
本公开的范围包括本文所公开的任何特征或特征组合(明示或暗示),或其任何概括,不管它是否减轻本文所解决的任何或全部问题。因此,可以在本申请(或要求其优先权的申请)的审查过程期间针对任何此类特征组合提出新的权利要求。具体地,参考所附权利要求书,来自从属权利要求的特征可与独立权利要求的那些特征相结合,来自相应的独立权利要求的特征可以按任何适当的方式组合,而并非只是以所附权利要求中枚举的特定形式组合。
Claims (18)
1.一种太阳能电池,包括:
基板,所述基板具有光接收表面和背表面,其中,所述基板包括在所述基板的背表面处的第一部分和第二部分,并且所述第一部分包括具有第一导电类型的第一掺杂区;
设置在所述第一掺杂区上方的掺杂物区;
第一薄介电层,所述第一薄介电层设置在所述基板的背表面上方,其中所述第一薄介电层的第一部分设置在所述掺杂物区和所述具有第一导电类型的第一掺杂区上方,并且其中所述第一薄介电层的第二部分设置在所述基板的所述第二部分上;
第一半导体层,所述第一半导体层设置在所述第一薄介电层上方,其中所述第一半导体层的第一部分设置在所述第一薄介电层的第一部分上方,并且其中所述第一半导体层的第二部分是具有第二导电类型的第二掺杂区,所述第二掺杂区设置在所述第一薄介电层的第二部分上方,使得所述第一掺杂区形成在所述基板的背表面处的第一部分中并且第二掺杂区形成在所述基板的背表面处的第二部分上方,其中,所述第二掺杂区不与所述第一掺杂区横向交叠;
第一导电触点,所述第一导电触点设置在所述第一掺杂区上方;以及
第二导电触点,所述第二导电触点设置在所述第二掺杂区上方。
2.根据权利要求1所述的太阳能电池,其中所述基板包含单晶硅基板。
3.根据权利要求1所述的太阳能电池,其中所述第一导电类型为P型,并且所述第二导电类型为N型。
4.根据权利要求1所述的太阳能电池,其中所述第一薄介电层包含隧道氧化物。
5.根据权利要求1所述的太阳能电池,进一步包括设置在所述第一掺杂区和所述第一导电触点之间的接触开口,其中所述接触开口允许所述第一掺杂区和所述第一导电触点之间的电连接。
6.根据权利要求1所述的太阳能电池,其中所述第一半导体层包含多晶硅。
7.根据权利要求1所述的太阳能电池,进一步包括设置在所述光接收表面上的第二半导体层。
8.根据权利要求7所述的太阳能电池,其中所述第二半导体层包含多晶硅。
9.根据权利要求1所述的太阳能电池,其中所述第二掺杂区的最低面与所述第一掺杂区的最高面竖直地间隔开。
10.一种太阳能电池,包括:
基板,所述基板具有光接收表面和背表面,其中,所述基板包括在所述基板的所述背表面处的第一部分和第二部分,并且所述第一部分包括具有第一导电类型的第一掺杂区;
掺杂物区,所述掺杂物区在所述第一掺杂区上方;
第一薄介电层,所述第一薄介电层设置在所述基板的背表面上方,其中所述第一薄介电层的第一部分设置在所述掺杂物区和所述具有第一导电类型的第一掺杂区上方,并且其中所述第一薄介电层的第二部分设置在所述基板的第二部分上;
第一半导体层,所述第一半导体层设置在所述第一薄介电层上方,所述第一半导体层包括第一部分和第二部分,所述第一半导体层的第一部分设置在所述第一薄介电层的第一部分上方,其中所述第一半导体层的第二部分是具有第二导电类型的第二掺杂区,所述第二掺杂区设置在所述第一薄介电层的第二部分上方并且与所述第一半导体层的第一部分分离,使得所述第一掺杂区形成在所述基板的背表面处的第一部分中并且第二掺杂区形成在所述基板的背表面处的第二部分上方,其中,所述第二掺杂区不与所述第一掺杂区横向交叠;
第一导电触点,所述第一导电触点设置在所述第一掺杂区上方;以及
第二导电触点,所述第二导电触点设置在所述第二掺杂区上方。
11.根据权利要求10所述的太阳能电池,其中所述基板包括单晶硅基板。
12.根据权利要求10所述的太阳能电池,其中所述第一导电类型为P型,并且所述第二导电类型为N型。
13.根据权利要求10所述的太阳能电池,其中所述第一薄介电层包含隧道氧化物。
14.根据权利要求10所述的太阳能电池,进一步包括设置在所述第一掺杂区和所述第一导电触点之间的接触开口,其中所述接触开口允许所述第一掺杂区和所述第一导电触点之间的电连接。
15.根据权利要求10所述的太阳能电池,其中所述第一半导体层包含多晶硅。
16.根据权利要求10所述的太阳能电池,进一步包括设置在所述光接收表面上的第二半导体层。
17.根据权利要求16所述的太阳能电池,其中所述第二半导体层包含多晶硅。
18.根据权利要求10所述的太阳能电池,其中所述第二掺杂区的最低面与所述第一掺杂区的最高面竖直地间隔开。
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US12009441B2 (en) | 2024-06-11 |
CN116435398A (zh) | 2023-07-14 |
WO2018063842A1 (en) | 2018-04-05 |
CN109906516A (zh) | 2019-06-18 |
DE112017004982T5 (de) | 2019-08-29 |
DE112017004982B4 (de) | 2024-02-15 |
US20200251601A1 (en) | 2020-08-06 |
US20180097131A1 (en) | 2018-04-05 |
US11594648B2 (en) | 2023-02-28 |
US10629758B2 (en) | 2020-04-21 |
US20230155039A1 (en) | 2023-05-18 |
KR102550395B1 (ko) | 2023-06-30 |
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