JP5702315B2 - ナノコンポジット熱電材料の合成 - Google Patents
ナノコンポジット熱電材料の合成 Download PDFInfo
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- JP5702315B2 JP5702315B2 JP2012024719A JP2012024719A JP5702315B2 JP 5702315 B2 JP5702315 B2 JP 5702315B2 JP 2012024719 A JP2012024719 A JP 2012024719A JP 2012024719 A JP2012024719 A JP 2012024719A JP 5702315 B2 JP5702315 B2 JP 5702315B2
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- Prior art keywords
- micelles
- bismuth
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- containing compound
- micelle
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- 239000000463 material Substances 0.000 title claims description 73
- 239000002114 nanocomposite Substances 0.000 title claims description 11
- 230000015572 biosynthetic process Effects 0.000 title description 18
- 238000003786 synthesis reaction Methods 0.000 title description 8
- 239000000693 micelle Substances 0.000 claims description 167
- 230000002441 reversible effect Effects 0.000 claims description 82
- 239000002105 nanoparticle Substances 0.000 claims description 75
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 69
- 150000001875 compounds Chemical class 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 62
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 60
- 239000011162 core material Substances 0.000 claims description 59
- 229910052797 bismuth Inorganic materials 0.000 claims description 58
- 239000004094 surface-active agent Substances 0.000 claims description 34
- 239000002131 composite material Substances 0.000 claims description 33
- 229910052714 tellurium Inorganic materials 0.000 claims description 33
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 33
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 28
- 239000000908 ammonium hydroxide Substances 0.000 claims description 28
- KKMOSYLWYLMHAL-UHFFFAOYSA-N 2-bromo-6-nitroaniline Chemical compound NC1=C(Br)C=CC=C1[N+]([O-])=O KKMOSYLWYLMHAL-UHFFFAOYSA-N 0.000 claims description 25
- 239000011877 solvent mixture Substances 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- 239000011258 core-shell material Substances 0.000 claims description 21
- 238000005755 formation reaction Methods 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 18
- 239000002904 solvent Substances 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 239000003638 chemical reducing agent Substances 0.000 claims description 9
- 238000005406 washing Methods 0.000 claims description 9
- 239000011669 selenium Substances 0.000 claims description 8
- 239000011257 shell material Substances 0.000 claims description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 7
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052711 selenium Inorganic materials 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 5
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 4
- 239000008346 aqueous phase Substances 0.000 claims description 3
- 229910001451 bismuth ion Inorganic materials 0.000 claims description 3
- 239000003153 chemical reaction reagent Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000012074 organic phase Substances 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 230000002269 spontaneous effect Effects 0.000 claims description 3
- IIQJBVZYLIIMND-UHFFFAOYSA-J potassium;antimony(3+);2,3-dihydroxybutanedioate Chemical compound [K+].[Sb+3].[O-]C(=O)C(O)C(O)C([O-])=O.[O-]C(=O)C(O)C(O)C([O-])=O IIQJBVZYLIIMND-UHFFFAOYSA-J 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 description 31
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 16
- 229910052787 antimony Inorganic materials 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 13
- 239000000243 solution Substances 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000003756 stirring Methods 0.000 description 8
- -1 bismuth citrate Chemical class 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000000839 emulsion Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910019018 Mg 2 Si Inorganic materials 0.000 description 4
- 238000003917 TEM image Methods 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- DJKHDIWPSBMISY-UHFFFAOYSA-N [Na].[TeH2] Chemical compound [Na].[TeH2] DJKHDIWPSBMISY-UHFFFAOYSA-N 0.000 description 4
- 150000001768 cations Chemical class 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 150000001462 antimony Chemical class 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 150000001621 bismuth Chemical class 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000000977 initiatory effect Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- PITRRWWILGYENJ-UHFFFAOYSA-N 2-[2-[2-[2-[2-(4-nonylphenoxy)ethoxy]ethoxy]ethoxy]ethoxy]ethanol Chemical compound CCCCCCCCCC1=CC=C(OCCOCCOCCOCCOCCO)C=C1 PITRRWWILGYENJ-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910018989 CoSb Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003637 basic solution Substances 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910021474 group 7 element Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910001291 heusler alloy Inorganic materials 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 229910052752 metalloid Inorganic materials 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910002059 quaternary alloy Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229940026189 antimony potassium tartrate Drugs 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000012043 crude product Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- WBTCZEPSIIFINA-MSFWTACDSA-J dipotassium;antimony(3+);(2r,3r)-2,3-dioxidobutanedioate;trihydrate Chemical compound O.O.O.[K+].[K+].[Sb+3].[Sb+3].[O-]C(=O)[C@H]([O-])[C@@H]([O-])C([O-])=O.[O-]C(=O)[C@H]([O-])[C@@H]([O-])C([O-])=O WBTCZEPSIIFINA-MSFWTACDSA-J 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012065 filter cake Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 229910021472 group 8 element Inorganic materials 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- KLDGLPRBBANWAW-UHFFFAOYSA-J potassium;antimony(3+);2,3-dihydroxybutanedioate;trihydrate Chemical compound O.O.O.[K+].[Sb+3].[O-]C(=O)C(O)C(O)C([O-])=O.[O-]C(=O)C(O)C(O)C([O-])=O KLDGLPRBBANWAW-UHFFFAOYSA-J 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000013014 purified material Substances 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 150000003497 tellurium Chemical class 0.000 description 1
- 150000003498 tellurium compounds Chemical class 0.000 description 1
- VZZHAYFWMLLWGG-UHFFFAOYSA-K triazanium;bismuth;2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [NH4+].[NH4+].[NH4+].[Bi+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O VZZHAYFWMLLWGG-UHFFFAOYSA-K 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/023,746 US8518288B2 (en) | 2010-07-27 | 2011-02-09 | Synthesis of nanocomposite thermoelectric material |
| US13/023,746 | 2011-02-09 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012169619A JP2012169619A (ja) | 2012-09-06 |
| JP2012169619A5 JP2012169619A5 (enExample) | 2013-11-28 |
| JP5702315B2 true JP5702315B2 (ja) | 2015-04-15 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012024719A Expired - Fee Related JP5702315B2 (ja) | 2011-02-09 | 2012-02-08 | ナノコンポジット熱電材料の合成 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5702315B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8419980B2 (en) * | 2011-04-26 | 2013-04-16 | Toyota Motor Engineering And Manufacturing North America | Ternary thermoelectric material containing nanoparticles and process for producing the same |
| US8641917B2 (en) * | 2011-12-01 | 2014-02-04 | Toyota Motor Engineering & Manufacturing North America, Inc. | Ternary thermoelectric material containing nanoparticles and process for producing the same |
| US8840799B2 (en) * | 2011-12-01 | 2014-09-23 | Toyota Motor Engineering & Manufacturing North America, Inc. | Binary thermoelectric material containing nanoparticles and process for producing the same |
| KR101423525B1 (ko) | 2013-02-26 | 2014-08-01 | 국민대학교산학협력단 | 코어-쉘 나노섬유 구조의 열전재료의 제조방법 |
| JP6001578B2 (ja) * | 2014-01-31 | 2016-10-05 | トヨタ自動車株式会社 | コア/シェル型ナノ粒子の製造方法およびその方法を用いた焼結体の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3864226B2 (ja) * | 2003-02-14 | 2006-12-27 | 独立行政法人物質・材料研究機構 | 中空状のホウ酸アルミニウムの単結晶ウイスカーとその製造方法 |
| JP2007191789A (ja) * | 2005-12-19 | 2007-08-02 | Fujifilm Corp | コア/シェル型粒子およびその製造方法 |
| KR100768632B1 (ko) * | 2006-10-30 | 2007-10-18 | 삼성전자주식회사 | 나노입자의 분산방법 및 이를 이용한 나노입자 박막의제조방법 |
| US9718043B2 (en) * | 2009-02-24 | 2017-08-01 | Toyota Motor Engineering & Manufacturing North America, Inc. | Core-shell nanoparticles and process for producing the same |
| JP2010199276A (ja) * | 2009-02-25 | 2010-09-09 | Konica Minolta Holdings Inc | 熱電変換素子およびその製造方法 |
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2012
- 2012-02-08 JP JP2012024719A patent/JP5702315B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012169619A (ja) | 2012-09-06 |
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