JP5694949B2 - 光起電力素子を形成するための組成物と方法 - Google Patents

光起電力素子を形成するための組成物と方法 Download PDF

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JP5694949B2
JP5694949B2 JP2011542528A JP2011542528A JP5694949B2 JP 5694949 B2 JP5694949 B2 JP 5694949B2 JP 2011542528 A JP2011542528 A JP 2011542528A JP 2011542528 A JP2011542528 A JP 2011542528A JP 5694949 B2 JP5694949 B2 JP 5694949B2
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metal
exchange
contact
layer
silicon
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Expired - Fee Related
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JP2012513676A (ja
JP2012513676A5 (https=
Inventor
ボーランド ウィリアム
ボーランド ウィリアム
デイビッド グリックスマン ハワード
デイビッド グリックスマン ハワード
マリア ジョン−ポール
マリア ジョン−ポール
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EIDP Inc
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EI Du Pont de Nemours and Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0121—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2011542528A 2008-12-22 2009-12-21 光起電力素子を形成するための組成物と方法 Expired - Fee Related JP5694949B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13975808P 2008-12-22 2008-12-22
US61/139,758 2008-12-22
PCT/US2009/068914 WO2010075247A2 (en) 2008-12-22 2009-12-21 Compositions and processes for forming photovoltaic devices

Publications (3)

Publication Number Publication Date
JP2012513676A JP2012513676A (ja) 2012-06-14
JP2012513676A5 JP2012513676A5 (https=) 2013-02-14
JP5694949B2 true JP5694949B2 (ja) 2015-04-01

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JP2011542528A Expired - Fee Related JP5694949B2 (ja) 2008-12-22 2009-12-21 光起電力素子を形成するための組成物と方法

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Country Link
US (1) US8710355B2 (https=)
EP (1) EP2380204A2 (https=)
JP (1) JP5694949B2 (https=)
KR (1) KR20110101218A (https=)
CN (1) CN102301485A (https=)
TW (1) TW201034227A (https=)
WO (1) WO2010075247A2 (https=)

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US9024367B2 (en) 2012-02-24 2015-05-05 The Regents Of The University Of California Field-effect P-N junction
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KR101396444B1 (ko) * 2013-05-06 2014-05-22 한화케미칼 주식회사 태양전지의 전극의 제조방법 및 이를 이용한 태양전지
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CN103383916B (zh) * 2013-08-08 2016-03-02 扬州晶新微电子有限公司 可用于共晶焊的p型硅器件芯片背面金属化方法
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Also Published As

Publication number Publication date
JP2012513676A (ja) 2012-06-14
US8710355B2 (en) 2014-04-29
TW201034227A (en) 2010-09-16
EP2380204A2 (en) 2011-10-26
WO2010075247A2 (en) 2010-07-01
WO2010075247A3 (en) 2011-07-07
US20100154875A1 (en) 2010-06-24
CN102301485A (zh) 2011-12-28
KR20110101218A (ko) 2011-09-15

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