JP5681930B2 - Display device and thin film transistor substrate - Google Patents

Description

  The present invention relates to a display device, and more particularly to a display device having a structure in which a decrease in yield due to dielectric breakdown due to static electricity in a manufacturing process is prevented.

  In a liquid crystal display device, a TFT substrate having pixels having a pixel electrode and a thin film transistor (TFT) formed in a matrix, and a color filter or the like is formed at a position corresponding to the pixel electrode of the TFT substrate so as to face the TFT substrate. A counter substrate is disposed, and a liquid crystal is sandwiched between the TFT substrate and the counter substrate. An image is formed by controlling the light transmittance of the liquid crystal molecules for each pixel.

  Various photolithography processes exist in a liquid crystal display device, particularly in a TFT substrate. In the photolithography process, static electricity is likely to occur in processes such as film formation by a spinner and drying. On the TFT substrate, a large number of scanning lines and video signal lines cross each other through an interlayer insulating film. In addition, a large number of TFTs are formed to control these wirings. When static electricity is generated in the manufacturing process, the interlayer insulating film is broken, and the scanning line and the video signal line are short-circuited, or the TFT is broken. Therefore, the generation of static electricity in the manufacturing process has a great influence on the manufacturing yield.

  In order to prevent dielectric breakdown or TFT breakdown due to static electricity, there is a means for preventing static electricity from entering the display area by, for example, dropping it to the ground before the static electricity enters the display area where the pixels are formed. It has been taken. In “Patent Document 1”, in order to protect the scanning line driving circuit and the like provided around the display area from external static electricity, a conductive film is coated on the surface of the scanning line driving circuit and the like through an insulating film. A configuration is described in which the scanning line driving circuit and the like are protected by grounding the conductive film. Further, “Patent Document 2” describes an example of a diode circuit for protection from static electricity formed around the display area.

JP 2008-203761 A Japanese Patent Laid-Open No. 2001-21909

  TFTs using an a-Si film are used for relatively large displays such as TVs. On the other hand, TFTs using poly-Si are used in relatively small displays such as mobile phones and portable game machines. In a liquid crystal display device using a poly-Si TFT, since the mobility of poly-Si is high, a driving circuit is formed of a TFT and a scanning line GL driving circuit or the like is built in the substrate.

  In a large liquid crystal display device using an a-Si TFT and a small liquid crystal display device using a poly-Si TFT, different configurations are used to protect against static electricity due to space problems in the substrate. . In a large liquid crystal display device using an a-Si TFT, since there is a relatively large space, a diode circuit for protecting from static electricity is formed outside the display region 500 in which pixels are formed in a matrix. This circuit configuration is shown in FIG.

  In FIG. 7, an electrostatic protection circuit is formed between the terminal 200 connected to the scanning line GL and the display region 500. In FIG. 7, the electrostatic protection circuit is formed by a diode, but the diode is formed by connecting the gate and drain or source of the TFT. In FIG. 7, when a large positive static electricity enters from the terminal 200, the diode 130 is turned on. When a large negative static electricity enters, the diode 140 is turned on, and the static electricity flows to the ground. The dielectric breakdown of the insulating film 300 can be prevented.

  In a small liquid crystal display device using a poly-Si TFT, since the substrate is small and part of the drive circuit formed by the TFT is built in the substrate, it is difficult to arrange the electrostatic protection circuit in the substrate. It is. On the other hand, in a small liquid crystal display device, a large number of substrates are formed on a mother substrate, and then the mother substrate is separated by scribing or the like to form individual liquid crystal display devices.

  Therefore, in a small liquid crystal display device using poly-Si TFTs, a small space is formed between individual substrates, an antistatic circuit is formed in this portion, and this small space is separated when scribing or the like is performed. And then being destroyed. This is because a large amount of static electricity is generated in the manufacturing process, and thus an antistatic circuit is not required after the product is completed.

  FIG. 8 shows a configuration of an antistatic circuit in such a small liquid crystal display device. In FIG. 8, the upper side of the scribing line 210 is the substrate. A terminal 200, a display area 500, and the like are formed in the substrate, but only one terminal is displayed in FIG.

  In FIG. 8, an antistatic wire 230 extends beyond the scribing line 210 to the outside of the substrate. The antistatic wire 230 is connected to the diode 150 and the diode 160. Both the diode 150 and the diode 160 are formed by connecting the gate and drain or source of the TFT. Here, if large static electricity is induced in the vicinity of the terminal 200, the diode 150 and the diode 160 are turned on to release the static electricity to the ground, and the TFT or the interlayer insulating film in the display region 500 in the substrate is protected.

  However, when a high resolution is required in the display, the number of pixels increases, and the number of scanning lines GL, video signal lines DL, and the like increases accordingly. For example, as the number of scanning lines GL increases, it becomes difficult to form an antistatic circuit for each scanning line GL.

  On the other hand, a selector type driving method has been developed in order to cope with an increase in scanning lines GL accompanying an increase in resolution. In the selector type driving method, the scanning lines GL are divided into a plurality of blocks, and the scanning lines GL are scanned for each block, thereby reducing the number of lead lines of the scanning lines GL. However, in the selector type driving method, the number of control TFTs is increased in order to control the scanning line GL for each block. Then, since space is required for the control TFT, the problem that the space for the antistatic circuit is insufficient remains.

  An object of the present invention is to realize a configuration that can prevent the TFT or the interlayer insulating film 300 from being damaged by static electricity even when the resolution is increased and the number of pixels is increased.

  The present invention overcomes the above problems, and specific means are as follows.

  (1) The scanning lines extend in the first direction and arranged in the second direction, the video signal lines extend in the second direction and arranged in the first direction, and the scanning lines A display area in which pixels are formed in an area surrounded by the video signal line, and a scanning line lead line connected to the scanning line adjacent to the display area extends in the first direction. Arranged in the second direction, a control line extends in the second direction, has a control region arranged in the first direction, and has a substrate on which terminals connected to the control line are formed In the liquid crystal display device, an interlayer insulating film and an a-Si film are provided below the video signal line in the display region and below the wiring formed in the same layer as the video signal line in the control region. Formed on the outer side of the terminal in the same layer as the video signal line, and electrically connected to the terminal. A liquid crystal display device characterized in that there is a continuous wiring, the interlayer insulating film is formed under the wiring existing outside the terminal, and the a-Si film is not formed .

  (2) The width of the a-Si film is larger than the width of the video signal line or the width of the wiring formed in the same layer as the video signal line in the control region (1) ) Liquid crystal display device.

  (3) The scanning lines extend in the first direction and are arranged in the second direction, the video signal lines extend in the second direction and are arranged in the first direction, and the scanning lines A display area in which pixels are formed in an area surrounded by the video signal line, and a scanning line lead line connected to the scanning line adjacent to the display area extends in the first direction. Arranged in the second direction, a control line extends in the second direction, has a control region arranged in the first direction, and has a substrate on which terminals connected to the control line are formed In the method for manufacturing a liquid crystal display device, an interlayer insulating film and an a− are formed below the video signal line in the display region and below the wiring formed in the same layer as the video signal line in the control region. A Si film is formed, and a scribing line for separating the substrate is formed outside the terminal, The ground line is formed in the same layer as the scanning line on the outer side of the scribe line, the interlayer insulating film is formed on the outer side of the terminal, and the a-Si film is formed on the interlayer insulating film. Without forming an antistatic wire electrically connected to the terminal, and the antistatic wire is formed so as to be connected to another antistatic wire outside the ground wire, and then the scribing line. A method of manufacturing a liquid crystal display device, wherein the substrate is separated along the line.

  (4) The width of the a-Si film below the video signal line in the display area is made larger than the width of the video signal line, and the wiring formed in the same layer as the video signal line in the control area The width of the lower a-Si film is formed larger than the width of the wiring formed in the same layer as the video signal line. The method for manufacturing a liquid crystal display device according to (3),

  (5) The scanning lines extend in the first direction and arranged in the second direction, the video signal lines extend in the second direction and arranged in the first direction, and the scanning lines A liquid crystal display device comprising: a display area in which pixels are formed in an area surrounded by the video signal line; and a substrate on which a terminal for supplying a signal to the display area is formed, wherein the video in the display area An interlayer insulating film and an a-Si film are formed between the signal line and the scanning line, and are formed in the same layer as the video signal line outside the terminal and are electrically connected to the terminal. A liquid crystal display device, wherein wiring is present, the interlayer insulating film is formed under the wiring existing outside the terminal, and the a-Si film is not formed.

  (6) The scanning lines extend in the first direction and are arranged in the second direction, the video signal lines extend in the second direction and are arranged in the first direction, and the scanning lines A method for manufacturing a liquid crystal display device, comprising: a display area in which pixels are formed in an area surrounded by the video signal lines; and a substrate on which a terminal for supplying a signal to the display area is formed. An interlayer insulating film and an a-Si film are formed under the video signal line in FIG. 5, a scribing line for separating the substrate is formed outside the terminal, and the scanning line is formed outside the scribing line. A ground wire is formed in the same layer as the wire, the interlayer insulating film is formed outside the terminal, and the a-Si film is not formed on the interlayer insulating film, and the terminal is electrically A connected antistatic wire is formed, and the antistatic wire is connected to the ground. In the outer, formed so as to be connected to the other antistatic line, then along the scribing line, a manufacturing method of a liquid crystal display device and separating the substrate.

  According to the present invention, since the antistatic circuit can be formed without using the diode circuit, the space for the antistatic circuit can be largely omitted. In addition, according to the present invention, since the antistatic circuit can be realized substantially without using circuit elements, the manufacturing cost is greatly reduced.

  Furthermore, according to the present invention, since the space can be greatly reduced for the antistatic circuit, a high-resolution display having a large number of pixels can be realized with high reliability and at low cost.

1 is a schematic plan view of a liquid crystal display device according to the present invention. 6 is a cross-sectional view in a scanning line control region according to Embodiment 1. FIG. It is sectional drawing of the cross | intersection part of the antistatic wire and ground wire by Example 1. FIG. 7 is a cross-sectional view in a scanning line control region according to Embodiment 2. FIG. It is sectional drawing of the cross | intersection part of the static electricity prevention line by Example 2, and an earth wire. It is a circuit diagram of the liquid crystal display device by a selector type drive method. It is an example of the protection circuit which uses a diode. It is another example of the protection circuit using a diode.

  The contents of the present invention will be described in detail below with reference to examples.

  FIG. 1 is a circuit diagram showing an antistatic circuit according to the present invention. FIG. 1 shows only a part of the liquid crystal display device. FIG. 1 shows a liquid crystal display device by a selector type driving method. The selector type driving method can reduce the number of lines connecting the scanning line GL and the scanning line GL driving circuit as compared with the conventional driving method. However, although the number of lines for controlling the scanning line GL or the scanning line GL can be reduced, the number of TFTs for controlling the scanning line GL increases. Therefore, countermeasures against static electricity remain a demanding issue.

  Before describing the contents of FIG. 1, the selector type driving method will be described with reference to FIG. In FIG. 6, a driving circuit 1000 for the scanning lines GL and the video signal lines DL is arranged on the upper side of the drawing, and a control area for driving the scanning lines GL is arranged on the left side. In FIG. 6, the right side is a display area 500, and pixels including the pixel electrode 103, the pixel TFT 101, and the like are formed in a matrix. In the display area 500 of FIG. 6, the scanning lines GL extend in the horizontal direction and are arranged in the vertical direction. The video signal lines DL extend in the vertical direction and are arranged in the horizontal direction. Pixels are formed in a region surrounded by the scanning lines GL and the video signal lines DL.

  A pixel TFT 101 is formed in each pixel, the drain of the pixel TFT 101 is connected to the video signal line DL, and the gate of the pixel TFT 101 is connected to the scanning line GL. The source of the pixel TFT 101 is connected to the pixel electrode 103. A liquid crystal layer 102 exists between the pixel electrode 103 and the common electrode 104. A constant voltage is applied to the common electrode 104, and a voltage corresponding to the video signal from the video signal line DL is applied to the pixel electrode 103, thereby changing the alignment state of the liquid crystal layer 102, and the liquid crystal layer for each pixel. An image is formed by controlling the transmittance of 102.

  The left side of FIG. 6 is a scanning signal line control circuit. In the conventional driving method, it is necessary to wire the control lines of the scanning lines GL as many as the number of the scanning lines GL on the lower side of the drawing of FIG. 6, so that a large space is required to route the control lines of the scanning lines GL. I was trying. On the other hand, in the selector driving method shown in FIG. 6, the number of control lines of the scanning line GL is greatly reduced by dividing the scanning line GL into blocks and scanning the scanning lines GL for each block. Yes.

  In FIG. 6, the scanning line GL is composed of 72 scanning lines GL as one block. In this specification, the scanning line GL in the display area 500 is called a scanning line GL, and the portion extending laterally outward from the display area 500 is called a scanning line lead-out line GLL. A first control TFT 111 and a second control TFT 121 are connected to the scanning line lead line GLL connected to the scanning line GL in the display region 500. On the left side of FIG. 6, 72 first control lines G1 extend in the vertical direction. In addition, 72 second control lines G2 extend in the vertical direction. Furthermore, 36 first gate lines 112 and 36 second gate lines 122 connected to the second control line G2 extend in the horizontal direction. Each of the 72 scanning line blocks is selected by the first gate line 112 and the second gate line 122.

  As shown in FIG. 6, the 72 first control TFTs 111 are simultaneously controlled by the first gate lines 112, and the 72 second control TFTs 121 are simultaneously controlled by the second gate lines 122. When the first control TFT 111 is turned on, the second control TFT 121 is turned off, and when the first control TFT 111 is turned off, the second control TFT 121 is turned on.

  Here, for example, assuming that the uppermost 72 scanning lines GL are the first block, when the first control TFT 111 in the first block is turned on, the first control TFT 111 in the second block and thereafter is turned off. It has become. In the first block, while the scanning line GL is scanned, the scanning lines GL below the second block are kept in the OFF state.

  When the scanning of the first block is completed, all the first control TFTs 111 of the first block are turned off, the first control TFTs 111 of the second block are turned on, and the scanning lines GL of the second block are scanned. At this time, the scanning lines GL below the first block and the third block are kept in the OFF state.

  For example, while the first control TFT 111 in the first block is ON and the scanning line GL of the first block is being scanned, the second control TFT 121 is OFF, so that the scanning signal is displayed in the display area. Sent to 500 scanning lines GL. When the scanning of the first block is completed and the writing to the pixels existing in the first block is completed, the second control TFT 121 is turned on and the scanning line GL is at the VSS level.

  As described above, also in the selector type driving method, the scanning of the scanning line GL is performed in the same manner as the normal driving method. However, in normal driving, for example, 72 × 36 = 2592 control lines for controlling the scanning line GL are required, whereas in the selector type driving method shown in FIG. 6, only 72 × 2 = 144 is required. Therefore, in the selector driving method, the control lines for the scanning lines GL can be significantly reduced as compared with the conventional method.

  However, the selector type driving method requires a large number of first control TFTs 111 and second control TFTs 121 for controlling the control lines of the scanning lines GL. For example, in FIG. 6, the first control TFT 111 of 72 × 36 = 2589 and the second control TFT 121 of 72 × 36 = 2589 are required. The space occupied by both the first control TFT 111 and the second control TFT 121 is much smaller than the space for drawing the control line of the scanning line GL. However, when the size of the substrate 100 is limited and the number of pixels increases, a space problem occurs.

  As shown in FIG. 1, the present invention prevents the destruction of the TFT or the interlayer insulating film 300 due to static electricity only by the configuration of the antistatic wire 230 without using a diode circuit as a circuit for countermeasures against static electricity. Is. FIG. 1 is an enlarged view of the 36th block portion at the bottom of the scanning line GL in FIG. 6, and a terminal 200, a scribing line 210, a grounding wire 220, and an antistatic wire 230 are added and displayed. . That is, FIG. 1 is an enlarged view of the lower left portion of the liquid crystal display device. Note that VSS, which is a specific potential in FIG. 6, is a ground potential in FIG.

  In FIG. 1, on the right side, a display region 500 is formed in which pixels including a pixel TFT 101, a pixel electrode 103, a liquid crystal layer 102, a common electrode 104, and the like are formed in a matrix. A scanning line lead line GLL extends from the scanning line GL in the display area 500 to the left side. A first TFT and a second control TFT 121 are connected to each scanning line lead line GLL.

  The 72 first control TFTs 111 are controlled by a second control line G2 that sends a 36th positive signal, and the 72 second control TFTs 121 are controlled by a second control line G2 that sends a 36th negative signal. Is done. When the first control TFT 111 is ON, the second control TFT 121 is OFF. When the first control TFT 111 is OFF, the second control TFT 121 is ON. The selector type driving method is as described in FIG.

  In FIG. 1, 72 first control lines G1 extend in the vertical direction, and 72 second control lines G2 extend in the vertical direction. Both the first control TFT 111 and the second control TFT 121 are connected to the terminal 200 formed at the end of the substrate 100. A dotted line drawn outside the terminal 200 indicates the scribing line 210. That is, after the substrate 100 is completed, the substrate 100 is separated from the mother substrate along the scribing line 210.

  In FIG. 1, a ground wire 220 is formed outside the scribing line 210 so as to surround the scribing line 210. FIG. 1 shows only the lower left of the liquid crystal display device, but the ground wire 220 surrounds the entire circumference of the scribing line 210. The ground line 220 is formed in the same layer as the scanning line GL in the display region 500.

  From each terminal 200, an antistatic wire 230 extends outward beyond the scribing line 210 and the ground wire 220, and each antistatic wire 230 is connected to the outside of the ground wire 220. In FIG. 1, the antistatic wire 230 is connected to the outside of the ground wire 220. This is a state in the manufacturing process, and after the substrate 100 is completed, the portion outside the substrate 100 is scribed. Separated along line 210. Therefore, after the substrate 100 is completed, the terminals 200 are insulated from each other.

  The antistatic line 230 is formed in the same layer as the video signal line DL in the display area 500. Accordingly, the interlayer insulating film 300 is formed between the ground wire 220 and the antistatic wire 230. The interlayer insulating film 300 is generally made of SiN. The lower wiring formed in the same layer as the scanning line GL, that is, the ground line 220 is formed of, for example, MoW, and the upper wiring formed in the same layer as the video signal line DL, that is, static electricity. The prevention wire 230 is made of, for example, an Al alloy.

  In FIG. 1, the first control line G1, the second control line G2, the scanning line lead line GLL, the first gate line 112, and the second gate are inside the terminal 200, that is, in the region indicated by C in FIG. The lines 122 and the like are formed so as to intersect with each other through the interlayer insulating film 300 and the a-Si film 400. Further, the scanning lines GL and the video signal lines DL in the display region 500 are also formed so as to intersect with each other through the interlayer insulating film 300 and the a-Si film 400.

  As described above, in order to prevent the upper wiring and the lower wiring intersecting each other from shorting at the intersection, the a-Si film 400 is formed in addition to the interlayer insulating film 300 inside the terminal 200. It is sandwiched. That is, the a-Si film 400 has a high resistivity unless it is doped with impurities and is the same as an insulator, and thus has the same effect as the interlayer insulating film 300. Therefore, at the intersection, the same effect is obtained as when two layers of the interlayer insulating film 300 are formed.

  This is shown in FIG. 2 is a cross-sectional view taken along the line AA in FIG. 1, for example. In FIG. 2, a scanning line lead line GLL, which is a lower wiring, extends in the horizontal direction on the substrate 100. An interlayer insulating film 300 is formed on the scanning line lead line GLL. An a-Si film 400 is formed on the interlayer insulating film 300. On the a-Si film 400, the first control line G1, which is an upper wiring, extends in the direction perpendicular to the paper surface. Note that the intersection of the scanning line GL and the video signal line DL in the display region 500 is the same as the configuration in FIG.

  The a-Si film 400 is formed slightly wider than the first control line G1, and extends below the first control line G1 in the same direction as the first control line G1. As shown in FIG. 2, the width of the a-Si film 400 is formed to be larger by about w1 = 1 μm on one side than the width of the first control line G1. Here, the thickness of the interlayer insulating film 300 is, for example, 200 nm, and the thickness of the a-Si film 400 is, for example, about 50 nm. As described above, the withstand voltage between the upper wiring G1 and the lower wiring GLL is improved by the amount of the a-Si film 400 even if a certain amount of static electricity enters inside the terminal 200.

  On the other hand, in the outside of the terminal 200, that is, in the region indicated by D in FIG. 1, the ground wire 220 as the lower wiring and the antistatic wire 230 as the upper wiring are arranged so as to intersect each other. An interlayer insulating film 300 is formed between the ground wire 220 and the antistatic wire 230. However, unlike the region C, the a-Si film 400 is not formed on the interlayer insulating film 300 in this portion.

  This is shown in FIG. In FIG. 3, a ground wire 220 as a lower wiring extends in the horizontal direction on the substrate 100. An interlayer insulating film 300 exists on the ground wire 220, and an antistatic wire 230 extends on the interlayer insulating film 300 in a direction perpendicular to the paper surface. Between the ground wire 220 and the antistatic wire 230, only the interlayer insulating film 300 exists, and the a-Si film 400 does not exist.

  Comparing FIG. 2 and FIG. 3, since only the interlayer insulating film 300 exists between the lower wiring and the upper wiring in FIG. 3, when static electricity enters, insulation is compared with the configuration of FIG. 2. Easy to destroy. That is, when static electricity enters, dielectric breakdown occurs at the intersection X of the ground wire 220 and the static electricity prevention wire 230 in FIG. 1, and the static electricity escapes to the ground wire 220. Therefore, the control region and display formed in the region C in FIG. The interlayer insulating film and the TFT in the region 500 are protected.

  As shown in FIG. 1, a feature of the present invention is that such protection from static electricity is performed only by a three-dimensional structure of wiring without using a diode circuit. According to the configuration of the present invention, since no diode circuit is used, the space of the protection circuit against static electricity can be saved greatly. In addition, since the structure is simple without using a diode circuit or the like, the protection circuit can be formed at low cost, and a reduction in manufacturing yield due to the protection circuit can be suppressed.

  Depending on the process, the interlayer insulating film 300 may be slightly etched when the a-Si film 400 is etched. In this case, FIG. 4 shows a portion corresponding to the AA cross section in the portion of the region C inside the terminal 200 portion in FIG. Moreover, the part corresponding to the BB cross section in the area | region D outside the terminal 200 part in FIG. 1 is shown in FIG.

  In FIG. 4, below the a-Si film 400, the interlayer insulating film 300 maintains the initial film thickness, but the part not covered by the a-Si film 400, that is, the part 301 is the interlayer insulating film. The film thickness is thinner than the original film thickness. However, in FIG. 4, since the a-Si film 400 is formed wider than the upper wiring, the withstand voltage between the lower wiring GLL and the upper wiring G1 hardly decreases.

  On the other hand, in FIG. 5, the interlayer insulating film 300 is the original film in the lower portion of the antistatic wire 230 in the cross-sectional shape of the portion where the ground wire 220 and the antistatic wire 230 intersect with each other. Although the thickness is maintained, the interlayer insulating film is thinner than the initial film thickness as indicated by 301 except for the lower portion of the antistatic wire 230. In FIG. 5, since the interlayer insulating film 300 is thin at the end of the antistatic wire 230, the withstand voltage at this portion is lowered.

  Thus, in the etching of the a-Si film 400, by adopting a process in which the interlayer insulating film 300 is also slightly thinned, the withstand voltage in the region inside the terminal 200 in FIG. The difference in the withstand voltage in the region outside the terminal 200 in FIG.

  Therefore, according to this embodiment, it is possible to more reliably protect the TFT or the interlayer insulating film in the display area 500 and the control area when static electricity is generated.

  In the above description, the liquid crystal display device of the selector type driving method has been described. However, the present invention is not limited to this, and the lower wiring such as the scanning line GL and the upper wiring such as the video signal line DL. Can be applied to a liquid crystal display device having a configuration in which and are arranged so as to cross each other with an interlayer insulating film 300 interposed therebetween.

  In the above description, in the display region 500 and the control region, the a-Si film 400 is formed on the interlayer insulating film 300 below the upper wiring. Even if it is formed, the same effect can be obtained.

  DESCRIPTION OF SYMBOLS 100 ... Substrate, 101 ... Pixel TFT, 102 ... Liquid crystal layer, 103 ... Pixel electrode, 104 ... Common electrode, 111 ... First control TFT, 112 ... First gate line, 121 ... Second control TFT, 122 ... Second gate Wire 130, first diode, 140 second diode, 150 third diode, 160 fourth diode, 200 terminal, 210 scribing line, 220 ground wire, 230 antistatic wire, 300 interlayer insulation Film: 301 ... Interlayer insulating film thinned portion, 400 ... a-Si film, 500 ... display area, 1000 ... drive circuit, G1 ... first control line, G2 ... second control line, DL ... video signal line, GL ... Scan line, GLL ... Scan line leader line

Claims (10)

A liquid crystal display device comprising a substrate having a display area in which a plurality of pixels are formed and a control area adjacent to the display area, and a terminal formed in the control area on the substrate,
In the control region, a first wiring extending from the terminal to an end of the substrate;
A second wiring formed in the same layer as the first wiring and extending from the terminal to the side opposite to the end of the substrate;
A third wiring formed in a layer closer to the substrate than the first wiring and intersecting the second wiring in plan view;
Each of the plurality of pixels has a thin film transistor,
The third wiring is electrically connected to the gate electrode of the thin film transistor,
In the control region, a drive circuit for driving the plurality of pixels is provided,
The second wiring and the third wiring are electrically connected to the drive circuit,
On the substrate, scanning lines extend in a first direction and are arranged in a second direction, video signal lines extend in the second direction and are arranged in the first direction,
The drive circuit divides the scanning line into a plurality of blocks, scans the scanning line GL for each block,
When the number of scanning lines is m, the second wiring includes n first control lines where m / n is an integer, and m / n second control lines. And a plurality of m / n third control lines,
M third wirings are formed, and each of the third wirings is connected to each of the scanning lines and each of the first control lines,
The drive circuit is
A first thin film transistor in which a source electrode and a drain electrode are connected to the third wiring, and a gate electrode is connected to the second control line;
A second thin film transistor in which one of a source electrode and a drain electrode is connected to the third wiring, the other is connected to a power supply line to which a predetermined potential is applied, and a gate electrode is connected to a third control line And having
The second control line selects one of the plurality of blocks by the first thin film transistor,
The third control line selects a block other than the one block by the second thin film transistor, and applies the predetermined potential to the third wiring,
Each of the first control lines inputs a scanning signal to each of the scanning lines of the one block via the third wiring,
An a-Si film and an insulating film are formed between the second wiring and the third wiring,
The liquid crystal display device, wherein the insulating film is formed under the first wiring, and the a-Si film is not formed.   The liquid crystal display device according to claim 1, wherein a width of the a-Si film is larger than a width of the second wiring. The insulating film has a first film thickness in a region overlapping with the a-Si film and a second film thickness in a region not overlapping with the a-Si film,
The liquid crystal display device according to claim 1, wherein the first film thickness is larger than the second film thickness.   The liquid crystal display device according to claim 1, wherein the insulating film is made of SiN.   A display device comprising a substrate having a display region in which a plurality of pixels are formed and a control region adjacent to the display region, and a terminal formed in the control region on the substrate,
  In the control region, a first wiring extending from the terminal to an end of the substrate;
  A second wiring formed in the same layer as the first wiring and extending from the terminal to the side opposite to the end of the substrate;
  A third wiring formed in a layer closer to the substrate than the first wiring and intersecting the second wiring in plan view;
  Each of the plurality of pixels has a thin film transistor,
  The third wiring is electrically connected to the gate electrode of the thin film transistor,
  In the control region, a drive circuit for driving the plurality of pixels is provided,
  The second wiring and the third wiring are electrically connected to the drive circuit,
  On the substrate, scanning lines extend in a first direction and are arranged in a second direction, video signal lines extend in the second direction and are arranged in the first direction,
  The drive circuit divides the scanning line into a plurality of blocks, scans the scanning line GL for each block,
  When the number of scanning lines is m, the second wiring includes n first control lines where m / n is an integer, and m / n second control lines. And a plurality of m / n third control lines,
  M third wirings are formed, and each of the third wirings is connected to each of the scanning lines and each of the first control lines,
  The drive circuit is
  A first thin film transistor in which a source electrode and a drain electrode are connected to the third wiring, and a gate electrode is connected to the second control line;
  A second thin film transistor in which one of a source electrode and a drain electrode is connected to the third wiring, the other is connected to a power supply line to which a predetermined potential is applied, and a gate electrode is connected to a third control line And having
  The second control line selects one of the plurality of blocks by the first thin film transistor,
  The third control line selects a block other than the one block by the second thin film transistor, and applies the predetermined potential to the third wiring,
  Each of the first control lines inputs a scanning signal to each of the scanning lines of the one block via the third wiring,
  An a-Si film and an insulating film are formed between the second wiring and the third wiring,
  The display device, wherein the insulating film is formed under the first wiring and the a-Si film is not formed.   6. The display device according to claim 5, wherein a width of the a-Si film is larger than a width of the second wiring.   The insulating film has a first film thickness in a region overlapping with the a-Si film and a second film thickness in a region not overlapping with the a-Si film,
  The display device according to claim 5, wherein the first film thickness is larger than the second film thickness.   A thin film transistor substrate having a pixel region in which a plurality of pixels each including a thin film transistor are formed, a control region adjacent to the pixel region, and a terminal formed in the control region;
  In the control region, a first wiring extending from the terminal to an end of the substrate;
  A second wiring formed in the same layer as the first wiring and extending from the terminal to the side opposite to the end of the substrate;
  A third wiring formed in a layer closer to the substrate than the first wiring and intersecting the second wiring in plan view;
  Each of the plurality of pixels has a thin film transistor,
  The third wiring is electrically connected to the gate electrode of the thin film transistor,
  In the control region, a drive circuit for driving the plurality of pixels is provided,
  The second wiring and the third wiring are electrically connected to the drive circuit,
  On the substrate, scanning lines extend in a first direction and are arranged in a second direction, video signal lines extend in the second direction and are arranged in the first direction,
  The drive circuit divides the scanning line into a plurality of blocks, scans the scanning line GL for each block,
  When the number of scanning lines is m, the second wiring includes n first control lines where m / n is an integer, and m / n second control lines. And a plurality of m / n third control lines,
  M third wirings are formed, and each of the third wirings is connected to each of the scanning lines and each of the first control lines,
  The drive circuit is
  A first thin film transistor in which a source electrode and a drain electrode are connected to the third wiring, and a gate electrode is connected to the second control line;
  A second thin film transistor in which one of a source electrode and a drain electrode is connected to the third wiring, the other is connected to a power supply line to which a predetermined potential is applied, and a gate electrode is connected to a third control line And having
  The second control line selects one of the plurality of blocks by the first thin film transistor,
  The third control line selects a block other than the one block by the second thin film transistor, and applies the predetermined potential to the third wiring,
  Each of the first control lines inputs a scanning signal to each of the scanning lines of the one block via the third wiring,
  An a-Si film and an insulating film are formed between the second wiring and the third wiring,
  A thin film transistor substrate, wherein the insulating film is formed under the first wiring, and the a-Si film is not formed.   9. The thin film transistor substrate according to claim 8, wherein the width of the a-Si film is larger than the width of the second wiring.   The insulating film has a first film thickness in a region overlapping with the a-Si film and a second film thickness in a region not overlapping with the a-Si film,
  The thin film transistor substrate according to claim 8, wherein the first film thickness is larger than the second film thickness.

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