JP5676273B2 - パンチスルー効果を利用した半導体発光デバイス - Google Patents

パンチスルー効果を利用した半導体発光デバイス Download PDF

Info

Publication number
JP5676273B2
JP5676273B2 JP2010543598A JP2010543598A JP5676273B2 JP 5676273 B2 JP5676273 B2 JP 5676273B2 JP 2010543598 A JP2010543598 A JP 2010543598A JP 2010543598 A JP2010543598 A JP 2010543598A JP 5676273 B2 JP5676273 B2 JP 5676273B2
Authority
JP
Japan
Prior art keywords
region
junction
junction region
emitting device
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010543598A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011510511A (ja
JP2011510511A5 (enExample
Inventor
プレシス，モヌコ ドゥ
プレシス，モヌコ ドゥ
ウィレム スニマン，ルカス
ウィレム スニマン，ルカス
Original Assignee
インシアヴァ （ピーテーワイ） リミテッド
インシアヴァ （ピーテーワイ） リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by インシアヴァ （ピーテーワイ） リミテッド, インシアヴァ （ピーテーワイ） リミテッド filed Critical インシアヴァ （ピーテーワイ） リミテッド
Publication of JP2011510511A publication Critical patent/JP2011510511A/ja
Publication of JP2011510511A5 publication Critical patent/JP2011510511A5/ja
Application granted granted Critical
Publication of JP5676273B2 publication Critical patent/JP5676273B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
JP2010543598A 2008-01-21 2009-01-21 パンチスルー効果を利用した半導体発光デバイス Expired - Fee Related JP5676273B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA2008/00593 2008-01-21
ZA200800593 2008-01-21
PCT/IB2009/050209 WO2009093177A1 (en) 2008-01-21 2009-01-21 Semiconductor light emitting device utilising punch-through effects

Publications (3)

Publication Number Publication Date
JP2011510511A JP2011510511A (ja) 2011-03-31
JP2011510511A5 JP2011510511A5 (enExample) 2011-05-12
JP5676273B2 true JP5676273B2 (ja) 2015-02-25

Family

ID=40586889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010543598A Expired - Fee Related JP5676273B2 (ja) 2008-01-21 2009-01-21 パンチスルー効果を利用した半導体発光デバイス

Country Status (5)

Country Link
US (1) US8759845B2 (enExample)
EP (1) EP2245676A1 (enExample)
JP (1) JP5676273B2 (enExample)
WO (1) WO2009093177A1 (enExample)
ZA (1) ZA201004753B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8729582B2 (en) * 2007-11-01 2014-05-20 Insiava (Pty) Limited Optoelectronic device with light directing arrangement and method of forming the arrangement
EP2245676A1 (en) 2008-01-21 2010-11-03 Insiava (Pty) Limited Semiconductor light emitting device utilising punch-through effects
WO2009095886A2 (en) * 2008-02-01 2009-08-06 Insiava (Pty) Limited Semiconductor light emitting device comprising heterojunction
CN102292834A (zh) 2008-12-15 2011-12-21 因西亚瓦(控股)有限公司 利用穿通效应的硅发光器件
JP6008742B2 (ja) 2010-01-22 2016-10-19 インシアヴァ （ピーテーワイ） リミテッド シリコン発光デバイス及び該デバイスを製造する方法
JP5665504B2 (ja) * 2010-11-24 2015-02-04 キヤノン株式会社 垂直共振器型面発光レーザおよび垂直共振器型面発光レーザアレイ
US9515227B2 (en) 2011-09-16 2016-12-06 Insiava (Pty) Limited Near infrared light source in bulk silicon
CN109844967B (zh) 2016-09-06 2024-07-05 南非大学 650nm硅雪崩发光二极管

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167390A (ja) 1984-02-09 1985-08-30 Matsushita Electric Ind Co Ltd 半導体発光素子
JPS63181486A (ja) 1987-01-23 1988-07-26 Hiroshima Univ 半導体発光装置
US5136353A (en) * 1990-05-10 1992-08-04 The University Of Colorado Foundation, Inc. Optical switch
US5510627A (en) * 1994-06-29 1996-04-23 The United States Of America As Represented By The Secretary Of The Navy Infrared-to-visible converter
US5994720A (en) * 1996-03-04 1999-11-30 University Of Pretoria Indirect bandgap semiconductor optoelectronic device
US6111271A (en) * 1996-03-28 2000-08-29 University Of Pretoria Optoelectronic device with separately controllable carrier injection means
JP4024431B2 (ja) * 1999-07-23 2007-12-19 株式会社東芝 双方向半導体発光素子及び光伝送装置
JP2002246639A (ja) * 2001-02-20 2002-08-30 Fujitsu Ltd 半導体発光装置
WO2005020287A2 (en) 2003-08-22 2005-03-03 The Board Of Trustees Of The University Of Illinois Semiconductor device and method
JP5420550B2 (ja) * 2007-10-08 2014-02-19 インシアヴァ （ピーテーワイ） リミテッド キャリア注入を用いるシリコン発光素子
US8729582B2 (en) * 2007-11-01 2014-05-20 Insiava (Pty) Limited Optoelectronic device with light directing arrangement and method of forming the arrangement
EP2245676A1 (en) 2008-01-21 2010-11-03 Insiava (Pty) Limited Semiconductor light emitting device utilising punch-through effects
WO2009095886A2 (en) * 2008-02-01 2009-08-06 Insiava (Pty) Limited Semiconductor light emitting device comprising heterojunction
CN102292834A (zh) * 2008-12-15 2011-12-21 因西亚瓦(控股)有限公司 利用穿通效应的硅发光器件
WO2010086798A1 (en) * 2009-01-27 2010-08-05 Insiava (Pty) Limited Microchip-based moems and waveguide device
JP6008742B2 (ja) * 2010-01-22 2016-10-19 インシアヴァ （ピーテーワイ） リミテッド シリコン発光デバイス及び該デバイスを製造する方法

Also Published As

Publication number Publication date
ZA201004753B (en) 2011-08-31
EP2245676A1 (en) 2010-11-03
JP2011510511A (ja) 2011-03-31
US20110031893A1 (en) 2011-02-10
US8759845B2 (en) 2014-06-24
WO2009093177A1 (en) 2009-07-30

Similar Documents

Publication Publication Date Title
JP5676273B2 (ja) パンチスルー効果を利用した半導体発光デバイス
KR102357920B1 (ko) 전계 효과에 의해 도펀트들을 이온화하기 위한 p-n 접합 광전 소자
US9306113B2 (en) Silicon light emitting device utilising reach-through effects
US20140225059A1 (en) LED with Improved Injection Efficiency
US8362679B2 (en) Silicon light emitting device with carrier injection
US8674382B2 (en) Semiconductor light emitting device comprising heterojunction
EP2919282B1 (en) Nitride semiconductor stacked body and semiconductor light emitting device comprising the same
CN112466954B (zh) 一种半导体器件及其制造方法
Zavada et al. Efficient nitride-based short-wavelength emitters with enhanced hole injection
Ali et al. Design Analysis of Linear Graded Quantum barriers in Ultavoilet-C Laser Diodes
WO2009093170A1 (en) Silicon light emitting device utilising reach-through effects
Kim et al. P–N Junction Diode: I–V Behavior and Applications

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111208

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20120710

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130306

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130402

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130702

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130709

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131002

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140304

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140603

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141202

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141225

R150 Certificate of patent or registration of utility model

Ref document number: 5676273

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees