ZA201004753B - Semiconductor light emitting device utilising punch-through effects - Google Patents

Semiconductor light emitting device utilising punch-through effects

Info

Publication number
ZA201004753B
ZA201004753B ZA2010/04753A ZA201004753A ZA201004753B ZA 201004753 B ZA201004753 B ZA 201004753B ZA 2010/04753 A ZA2010/04753 A ZA 2010/04753A ZA 201004753 A ZA201004753 A ZA 201004753A ZA 201004753 B ZA201004753 B ZA 201004753B
Authority
ZA
South Africa
Prior art keywords
punch
effects
light emitting
emitting device
semiconductor light
Prior art date
Application number
ZA2010/04753A
Other languages
English (en)
Inventor
Plessis Monuko Du
Lukas Willem Snyman
Original Assignee
Insiava (Pty) Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Insiava (Pty) Ltd filed Critical Insiava (Pty) Ltd
Publication of ZA201004753B publication Critical patent/ZA201004753B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
ZA2010/04753A 2008-01-21 2010-07-06 Semiconductor light emitting device utilising punch-through effects ZA201004753B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ZA200800593 2008-01-21
PCT/IB2009/050209 WO2009093177A1 (en) 2008-01-21 2009-01-21 Semiconductor light emitting device utilising punch-through effects

Publications (1)

Publication Number Publication Date
ZA201004753B true ZA201004753B (en) 2011-08-31

Family

ID=40586889

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA2010/04753A ZA201004753B (en) 2008-01-21 2010-07-06 Semiconductor light emitting device utilising punch-through effects

Country Status (5)

Country Link
US (1) US8759845B2 (enExample)
EP (1) EP2245676A1 (enExample)
JP (1) JP5676273B2 (enExample)
WO (1) WO2009093177A1 (enExample)
ZA (1) ZA201004753B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5550558B2 (ja) * 2007-11-01 2014-07-16 インシアヴァ （ピーテーワイ） リミテッド 光誘導機構を有するオプトエレクトロニック・デバイスおよびその機構を形成する方法
WO2009093177A1 (en) 2008-01-21 2009-07-30 Insiava (Pty) Limited Semiconductor light emitting device utilising punch-through effects
CN101933169B (zh) * 2008-02-01 2012-07-11 Insiava(控股)有限公司 包括异质结的半导体发光器件
CN102292834A (zh) 2008-12-15 2011-12-21 因西亚瓦(控股)有限公司 利用穿通效应的硅发光器件
EP2526571B1 (en) 2010-01-22 2019-05-01 Insiava (Pty) Limited Silicon light emitting device and method of fabricating same
JP5665504B2 (ja) * 2010-11-24 2015-02-04 キヤノン株式会社 垂直共振器型面発光レーザおよび垂直共振器型面発光レーザアレイ
EP2756527B1 (en) 2011-09-16 2015-11-18 Insiava (Pty) Limited Near infrared light source in bulk silicon
US20210280736A1 (en) * 2016-09-06 2021-09-09 University Of South Africa OPTIMISED 650 nm SILICON AVALANCHE LED

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167390A (ja) 1984-02-09 1985-08-30 Matsushita Electric Ind Co Ltd 半導体発光素子
JPS63181486A (ja) 1987-01-23 1988-07-26 Hiroshima Univ 半導体発光装置
US5136353A (en) * 1990-05-10 1992-08-04 The University Of Colorado Foundation, Inc. Optical switch
US5510627A (en) * 1994-06-29 1996-04-23 The United States Of America As Represented By The Secretary Of The Navy Infrared-to-visible converter
US5994720A (en) 1996-03-04 1999-11-30 University Of Pretoria Indirect bandgap semiconductor optoelectronic device
US6111271A (en) * 1996-03-28 2000-08-29 University Of Pretoria Optoelectronic device with separately controllable carrier injection means
JP4024431B2 (ja) 1999-07-23 2007-12-19 株式会社東芝 双方向半導体発光素子及び光伝送装置
JP2002246639A (ja) * 2001-02-20 2002-08-30 Fujitsu Ltd 半導体発光装置
JP2007503710A (ja) * 2003-08-22 2007-02-22 ザ ボード オブ トラスティース オブ ザ ユニバーシティ オブ イリノイ 半導体素子及び方法
CA2702002C (en) 2007-10-08 2014-02-25 Insiava (Pty) Limited Silicon light emitting device with carrier injection
JP5550558B2 (ja) 2007-11-01 2014-07-16 インシアヴァ （ピーテーワイ） リミテッド 光誘導機構を有するオプトエレクトロニック・デバイスおよびその機構を形成する方法
WO2009093177A1 (en) 2008-01-21 2009-07-30 Insiava (Pty) Limited Semiconductor light emitting device utilising punch-through effects
CN101933169B (zh) 2008-02-01 2012-07-11 Insiava(控股)有限公司 包括异质结的半导体发光器件
CN102292834A (zh) 2008-12-15 2011-12-21 因西亚瓦(控股)有限公司 利用穿通效应的硅发光器件
US8395226B2 (en) 2009-01-27 2013-03-12 Insiava (Pty) Limited Microchip-based MOEMS and waveguide device
EP2526571B1 (en) 2010-01-22 2019-05-01 Insiava (Pty) Limited Silicon light emitting device and method of fabricating same

Also Published As

Publication number Publication date
WO2009093177A1 (en) 2009-07-30
JP5676273B2 (ja) 2015-02-25
EP2245676A1 (en) 2010-11-03
US20110031893A1 (en) 2011-02-10
JP2011510511A (ja) 2011-03-31
US8759845B2 (en) 2014-06-24

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