JP5675626B2 - 研磨パッド端部の延伸 - Google Patents
研磨パッド端部の延伸 Download PDFInfo
- Publication number
- JP5675626B2 JP5675626B2 JP2011532105A JP2011532105A JP5675626B2 JP 5675626 B2 JP5675626 B2 JP 5675626B2 JP 2011532105 A JP2011532105 A JP 2011532105A JP 2011532105 A JP2011532105 A JP 2011532105A JP 5675626 B2 JP5675626 B2 JP 5675626B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing pad
- polishing
- support member
- processing
- conditioning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 title claims description 139
- 239000000463 material Substances 0.000 claims description 40
- 230000002093 peripheral effect Effects 0.000 claims description 21
- 230000003750 conditioning effect Effects 0.000 description 78
- 239000000758 substrate Substances 0.000 description 34
- 238000000034 method Methods 0.000 description 22
- 230000008569 process Effects 0.000 description 12
- 239000012530 fluid Substances 0.000 description 10
- 239000003082 abrasive agent Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 3
- 239000000872 buffer Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- -1 PTFA Polymers 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012160 loading buffer Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
Claims (10)
- 基底部の上側表面に連結されたプラテンを有する基底部と、
前記プラテンの上側表面に結合された研磨パッドであって、研磨面を有する研磨パッドと、
前記研磨パッドの周辺端に隣接して前記基底部に連結された支持部材と、
前記支持部材の上側表面に結合された受け材料であって、前記研磨パッドの前記研磨面と同一平面内にある上側表面を有する受け材料と
を備え、
前記研磨パッドおよび前記受け材料が同じポリマー材料を含む装置。 - 前記プラテンが、円形であり、前記基底部に対して回転可能である、請求項1に記載の装置。
- 前記支持部材が、前記研磨パッドの前記周辺端に対して横におよび/または垂直に前記支持部材を動かすための駆動システムに連結されている、請求項1に記載の装置。
- 前記研磨パッドが可動であり、前記受け材料が、前記研磨面に対して固定されており、且つギャップによって前記研磨面から離間している、請求項1に記載の装置。
- 基底部の上側表面に回転可能に連結されたプラテンを有する基底部と、
前記プラテンの上側表面に結合された研磨パッドであって、研磨面を有する研磨パッドと、
前記研磨パッドの周辺端に隣接して前記基底部に連結された支持部材であって、前記研磨パッドの前記研磨面に対して調節可能な支持部材と、
前記支持部材の上側表面に結合された受け材料と
を備え、
前記研磨パッドおよび前記受け材料が同じ材料を含む、装置。 - 前記研磨パッドが円形である、請求項5に記載の装置。
- 前記受け材料が犠牲材料である、請求項5に記載の装置。
- 前記研磨パッドに対してX方向およびZ方向に直線的に前記支持部材を動かすために前記支持部材に連結された駆動システム
をさらに備えた、請求項5に記載の装置。 - 前記駆動システムが空気モータを備える、請求項8に記載の装置。
- 前記受け材料が、前記研磨パッドに対して固定されており、且つギャップによって前記研磨パッドから離間している、請求項5に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/253,034 | 2008-10-16 | ||
US12/253,034 US9238293B2 (en) | 2008-10-16 | 2008-10-16 | Polishing pad edge extension |
PCT/US2009/054527 WO2010044953A1 (en) | 2008-10-16 | 2009-08-20 | Polishing pad edge extension |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012505762A JP2012505762A (ja) | 2012-03-08 |
JP2012505762A5 JP2012505762A5 (ja) | 2012-10-04 |
JP5675626B2 true JP5675626B2 (ja) | 2015-02-25 |
Family
ID=42106817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011532105A Expired - Fee Related JP5675626B2 (ja) | 2008-10-16 | 2009-08-20 | 研磨パッド端部の延伸 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9238293B2 (ja) |
JP (1) | JP5675626B2 (ja) |
KR (1) | KR20110083673A (ja) |
TW (1) | TW201029798A (ja) |
WO (1) | WO2010044953A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9902038B2 (en) * | 2015-02-05 | 2018-02-27 | Toshiba Memory Corporation | Polishing apparatus, polishing method, and semiconductor manufacturing method |
CN113199391A (zh) * | 2021-06-09 | 2021-08-03 | 安徽格楠机械有限公司 | 一种融合机器人的双工位全自动双面研磨机 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7097544B1 (en) * | 1995-10-27 | 2006-08-29 | Applied Materials Inc. | Chemical mechanical polishing system having multiple polishing stations and providing relative linear polishing motion |
JP3231659B2 (ja) * | 1997-04-28 | 2001-11-26 | 日本電気株式会社 | 自動研磨装置 |
US6132298A (en) * | 1998-11-25 | 2000-10-17 | Applied Materials, Inc. | Carrier head with edge control for chemical mechanical polishing |
JP2001170857A (ja) * | 1999-04-01 | 2001-06-26 | Mitsubishi Materials Corp | ウェーハ研磨パッドのドレッシング装置およびドレッシング方法 |
JP2000334655A (ja) * | 1999-05-26 | 2000-12-05 | Matsushita Electric Ind Co Ltd | Cmp加工装置 |
JP2001062714A (ja) * | 1999-08-26 | 2001-03-13 | Hiroshima Nippon Denki Kk | 研磨装置 |
US6432823B1 (en) * | 1999-11-04 | 2002-08-13 | International Business Machines Corporation | Off-concentric polishing system design |
US6399501B2 (en) * | 1999-12-13 | 2002-06-04 | Applied Materials, Inc. | Method and apparatus for detecting polishing endpoint with optical monitoring |
US6428386B1 (en) * | 2000-06-16 | 2002-08-06 | Micron Technology, Inc. | Planarizing pads, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
JP2002134448A (ja) * | 2000-10-24 | 2002-05-10 | Nikon Corp | 研磨装置 |
US6866566B2 (en) * | 2001-08-24 | 2005-03-15 | Micron Technology, Inc. | Apparatus and method for conditioning a contact surface of a processing pad used in processing microelectronic workpieces |
US6586337B2 (en) * | 2001-11-09 | 2003-07-01 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection during chemical mechanical polishing |
JP2003229388A (ja) * | 2002-02-01 | 2003-08-15 | Nikon Corp | 研磨装置、研磨方法、半導体デバイス及び半導体デバイス製造方法 |
US7341502B2 (en) * | 2002-07-18 | 2008-03-11 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US7288165B2 (en) * | 2003-10-24 | 2007-10-30 | Applied Materials, Inc. | Pad conditioning head for CMP process |
KR20050114529A (ko) | 2004-06-01 | 2005-12-06 | 동부아남반도체 주식회사 | 연마 패드의 컨디셔너 장치 |
US7066792B2 (en) * | 2004-08-06 | 2006-06-27 | Micron Technology, Inc. | Shaped polishing pads for beveling microfeature workpiece edges, and associate system and methods |
KR20060030257A (ko) | 2004-10-05 | 2006-04-10 | 삼성전자주식회사 | 반도체 소자 제조에 사용되는 화학적 기계적 연마 장치 |
JP4079151B2 (ja) * | 2005-01-24 | 2008-04-23 | ヤマハ株式会社 | 研磨方法 |
JP4762647B2 (ja) * | 2005-02-25 | 2011-08-31 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
TWI386989B (zh) * | 2005-02-25 | 2013-02-21 | Ebara Corp | 研磨裝置及研磨方法 |
JP4851795B2 (ja) * | 2006-01-13 | 2012-01-11 | 株式会社ディスコ | ウエーハの分割装置 |
US20070212983A1 (en) * | 2006-03-13 | 2007-09-13 | Applied Materials, Inc. | Apparatus and methods for conditioning a polishing pad |
JP4803167B2 (ja) * | 2007-12-10 | 2011-10-26 | ヤマハ株式会社 | 研磨装置 |
US7967661B2 (en) * | 2008-06-19 | 2011-06-28 | Micron Technology, Inc. | Systems and pads for planarizing microelectronic workpieces and associated methods of use and manufacture |
JP5267918B2 (ja) * | 2008-07-15 | 2013-08-21 | 株式会社ニコン | 保持装置および研磨装置 |
-
2008
- 2008-10-16 US US12/253,034 patent/US9238293B2/en not_active Expired - Fee Related
-
2009
- 2009-08-20 WO PCT/US2009/054527 patent/WO2010044953A1/en active Application Filing
- 2009-08-20 JP JP2011532105A patent/JP5675626B2/ja not_active Expired - Fee Related
- 2009-08-20 KR KR1020117010977A patent/KR20110083673A/ko not_active Application Discontinuation
- 2009-10-12 TW TW098134519A patent/TW201029798A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US9238293B2 (en) | 2016-01-19 |
TW201029798A (en) | 2010-08-16 |
WO2010044953A1 (en) | 2010-04-22 |
JP2012505762A (ja) | 2012-03-08 |
US20100099339A1 (en) | 2010-04-22 |
KR20110083673A (ko) | 2011-07-20 |
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