WO2016043931A1

WO2016043931A1 - Use of uv laser for pad conditioning in cu cmp

Info

Publication number: WO2016043931A1
Application number: PCT/US2015/046767
Authority: WO
Inventors: Huyen Tran; Rixin Peng; Abdul Wahab MOHAMMED; Mario Cornejo; Shi-Haur SHEN; Rajeev Bajaj; Fred C. Redeker
Original assignee: Applied Materials, Inc.
Priority date: 2014-09-18
Filing date: 2015-08-25
Publication date: 2016-03-24

Abstract

The present disclosure relates to a polishing station having laser pad conditioning. The polishing station includes a polishing table configured to support a polishing pad for polishing a substrate by chemical mechanical polishing, a laser source disposed adjacent the polishing table, and a scrubbing disk disposed on a supporting arm. The laser source is positioned to direct a laser beams towards the polishing table to regenerate the polishing pad through a conditioning process while the polishing pad is disposed on the polishing table. The supporting arm is movable relative to the polishing table so that the scrubbing disk selectively contacts the polishing pad disposed on the polishing table to scrub of the polishing pad.

Description

USE OF UV LASER FOR PAD CONDITIONING IN CU CMP

BACKGROUND

Field

[0001] Embodiments of the present disclosure relate to generally relate to control methods and apparatus for conditioning a substrate polishing pad using optical conditioning devices, such as laser conditioning devices.

Description of the Related Art

[0002] In the fabrication of integrated circuits and other electronic devices on substrates, multiple layers of conductive, semiconductive, and dielectric materials are deposited on or removed from a feature side, i.e., a deposit receiving surface, of a substrate. As layers of materials are sequentially deposited and removed, the feature side of the substrate may become non- planar and require planarization. Chemical mechanical polishing (CMP) is a procedure where previously deposited material is removed from the feature side of the substrate to form a generally even, planar or level surface. CMP is useful in removing undesired surface topography and surface defects, such as rough surfaces, agglomerated materials, crystal lattice damage, and scratches. The procedures are also useful in forming features on a substrate by removing excess deposited material used to fill the features and to provide an even or level surface for subsequent deposition and processing.

[0003] During polishing processes, a polishing surface of a polishing pad contacts the device side of the substrate and moves relative to the substrate to planarize the substrate. The polishing surface usually experiences a deformation during polishing. The deformation may include smoothing of the polishing surface and/or unevenness in the plane of the polishing surface, as well as clogging or blockage of pores in the polishing surface that may lessen the ability of the pad to properly and efficiently remove material from the substrate. Periodic conditioning of the polishing surface is performed to regenerate a worn polishing pad, and thus maintain a consistent roughness, porosity and/or a generally flat profile across the polishing surface.

[0004] One method to condition the polishing surface is to use an abrasive conditioning disk that is urged against the polishing surface while being rotated and/or swept across the polishing surface. The abrasive portion of the conditioning disk, which may be diamond particles or other hard materials, typically cut into the pad surface, which forms grooves in, and otherwise roughens, the polishing surface. However, while the rotation and/or downforce applied to the conditioning disk is controlled, the abrasive portion may not cut into the polishing surface evenly, which creates non-uniformity in the roughness across the polishing surface. Additionally, as the cutting action is not readily controlled, the pad service life may be shortened. Further, the cutting action of these conditioning devices and systems sometimes produce large asperities in the polishing surface. While the asperities are beneficial in the polishing process, the asperities may break loose during polishing, which creates debris that may contribute to defects in the substrate.

[0005] Therefore, there is a need for an improved pad conditioning process and associated control methods.

SUMMARY

[0006] Embodiments of the present disclosure relate to methods and apparatus for polishing a substrate.

[0007] One embodiment provides a polishing station. The polishing station includes a polishing table configured to support a polishing pad for polishing a substrate by chemical mechanical polishing, a laser source disposed adjacent the polishing table, and a scrubbing disk disposed on a supporting arm. The laser source is positioned to direct a laser beams towards the polishing table to regenerate the polishing pad through a conditioning process while the polishing pad is disposed on the polishing table. The supporting arm is movable relative to the polishing table so that the scrubbing disk selectively contacts the polishing pad disposed on the polishing table to scrub of the polishing pad.

[0008] Another embodiment provides a polishing station. The polishing station includes a polishing table configured to support a polishing pad for polishing a substrate by chemical mechanical polishing, and an ultraviolet laser source disposed adjacent the polishing table. The laser source is positioned to direct a laser beam towards the polishing table to regenerate the polishing pad through a conditioning process while the polishing pad is disposed on the polishing table.

[0009] Another embodiment provides a method for conditioning a polishing pad for chemical mechanical polishing. The method includes directing a laser beam toward the polishing pad while the laser beam and the polishing pad move relative to each other, cutting a predetermined amount of material from a polishing surface of the polishing pad with the laser beam, and contacting the polishing surface with a scrubbing disk to remove material cut by the laser beam from the polishing surface.

BRIEF DESCRIPTION OF THE DRAWINGS

[0010] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.

[0011] Figure 1 is a partial sectional view of one embodiment of a processing station according to one embodiment of the present disclosure.

[0012] Figure 2 is a top plan view of the processing station of Figure 1 . [0013] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.

DETAILED DESCRIPTION

[0014] Embodiments of the present disclosure relate to generally relate to control methods and apparatus for conditioning a polishing pad using optical conditioning devices, such as laser conditioning devices. During polishing pad conditioning using a laser conditioning device, the majority of the pad material removed by the laser conditioning device evaporates while a small portion of the removed material remains loose on the polishing pad. In one embodiment, a scrubbing disk may be used to scrub away the loose material on the polishing pad. In one embodiment, when additional cutting of the polishing pad is desired, a scrubbing disk may be used to cut material from the polishing pad as well. Embodiments of the present disclosure provide minimal wear to the polishing pad during conditioning since there is no aggressive removal of the polishing pad's bulk materials, thus, extending the lifetime of polishing pads.

[0015] Figure 1 is a partial sectional view of one embodiment of a polishing station 100. Figure 2 is a schematic top view of the polishing station 100. The polishing station 100 may be used to perform a polishing process, such as a chemical mechanical polishing (CMP) process or an electrochemical mechanical polishing (ECMP) process. The polishing station 100 may be a stand-alone unit or part of a larger processing system. Even though a polishing station having a circular polishing pad is described in Figure 1 , other polishing modules, including those that use other types of processing pads, belts, indexable web-type pads, or a combination thereof, and those that move a substrate relative to a polishing surface in a rotational, linear or other planar motion may also be adapted to benefit from embodiments described herein. [0016] The polishing station 100 includes a platen 102 rotatably supported on a base 104. The platen 102 is operably coupled to a drive motor 106 adapted to rotate the platen 102 about a rotational axis A. The platen 102 supports a polishing pad 108. The polishing pad 108 may include a commercially available pad material, such as polymer based pad materials typically utilized in CMP processes, or other polishing article suitable for CMP. The polymer material may be a polyurethane, a polycarbonate, fluoropolymers, polytetrafluoroethylene (PTFE), polyphenylene sulfide (PPS), or combinations thereof. The polishing pad 108 may further include open or closed cell foamed polymers, elastomers, felt, impregnated felt, plastics, and like materials compatible with the processing chemistries. While the polishing pad 108 may be dielectric, it is contemplated that polishing pads having at least partially conductive polishing surfaces may also benefit from the invention.

[0017] The polishing pad 108 has a polishing surface 1 12 which includes a nap that may include microscopic pore structures. The nap and/or pore structures effect material removal from the feature side of a substrate polished on the polishing surface 1 12. Attributes of the polishing surface 1 12, such as polishing compound retention, polishing or removal activity, and material and fluid transportation, affect the removal rate. To facilitate optimal removal of material from the substrate, the polishing surface 1 12 may be periodically conditioned to roughen and/or fully and evenly open the nap or the pore structures. When the polishing surface 1 12 is conditioned in this manner, the polishing surface 1 12 provides a uniform and stable removal rate. The roughened polishing surface 1 12 facilitates removal by enhancing pad surface wetability and dispersing polishing compounds, such as, for example, abrasive particles supplied from a polishing medium.

[0018] A carrier head 1 14 is disposed above the polishing surface 1 12 of the polishing pad 108. The carrier head 1 14 retains a substrate 1 16 and controllably urges the substrate 1 16 against the polishing surface 1 12 (along the Z axis) of the polishing pad 108 during processing. The carrier head 1 14 is mounted to a support member 1 18 that supports the carrier head 1 14 and facilitates movement of the carrier head 1 14 relative to the polishing pad 108. The support member 1 18 may be coupled to the base 104 or mounted above the polishing station 100 in a manner that suspends the carrier head 1 14 above the polishing pad 108. In another embodiment, the support member 1 18 is a support arm that couples to a central support member (not shown) that may rotate the support member 1 18 relative to the polishing station 100. In one embodiment, the support member 1 18 is a circular track that is mounted above the polishing station 100.

[0019] The carrier head 1 14 is coupled to a drive system 120 that provides at least rotational movement of the carrier head 1 14 about a rotational axis B. The drive system 120 may additionally be configured to move the carrier head 1 14 along the support member 1 18 laterally (X and/or Y axes) relative to the polishing pad 108. In one embodiment, the drive system 120 moves the carrier head 1 14 vertically (Z axis) relative to the polishing pad 108 in addition to lateral movement. For example, the drive system 120 may be utilized to urge the substrate 1 16 against the polishing pad 108 in addition to providing rotational and/or lateral movement of the substrate 1 16 relative to the polishing pad 108. The lateral movement of the carrier head 1 14 may be a linear, or an arcing or sweeping motion.

[0020] A fluid applicator 122 may be positioned over the polishing surface 1 12 of the polishing pad 108. The fluid applicator 122 is adapted to provide polishing medium, such as polishing fluids or a polishing compound, to at least a portion of the radius of the polishing pad 108. The polishing fluid or polishing compound may be a chemical solution, a slurry, a cleaning solution, or a combination thereof. The polishing compound may consist primarily of water (e.g., about 70% to about 99%, or greater, content of de-ionized water (DIW)). For example, the medium may be an abrasive containing or abrasive free polishing compound adapted to aid in removal of material from the feature side of the substrate 1 16. Reductants and oxidizing agents, such as hydrogen peroxide, may also be added to the medium. Alternatively, the medium may be a rinsing agent, such as DIW, which is used to rinse or flush polishing byproducts from the polishing material of the polishing pad 108.

[0021] A system controller 1 10 may be connected to the drive motor 106 of the platen 102, the drive system 120 of the carrier head 1 14, and/or the fluid applicator 122 to control operation of the polishing station 100.

[0022] The polishing station 100 also includes a laser conditioner device 124 configured to condition the polishing surface 1 12 to achieve desired processing results, such as uniform and stable removal rate. The laser conditioner device 124 may include a conditioner head 126 coupled to the base 104 of the polishing station 100. The conditioner head 126 may include a laser source 128 positioned to direct a laser beam towards the polishing surface 1 12. The laser source 128 may include a laser emitter, a lens, a mirror, or other suitable device for emitting, transmitting, or directing a laser beam 140 toward the polishing surface 1 12 of the polishing pad 108. In one embodiment, the laser source 128 comprises a laser emitter 129. The laser emitter 129 may alternatively be located remotely from the laser conditioner device 124. Utilizing this architecture, the laser source 128 comprises optics necessary to deliver the laser beam 140 to the polishing surface 1 12 of the polishing pad 108.

[0023] The conditioner head 126 may be coupled to a support member 130 by a support arm 132. The support member 130 is disposed through the base 104 of the polishing station 100. Bearings (not shown) are provided between the base 104 and the support member 130 to facilitate rotation of the support member 130 about a rotational axis C relative to the base 104. An actuator 134 may be coupled between the base 104 and the support member 130 to control the rotational orientation of the support member 130 about the rotational axis C to allow the conditioner head 126 to move in an arc or sweeping motion above the polishing surface 1 12 of the polishing pad 108.

[0024] In one embodiment, the laser emitter 129 may emit the laser beam 140 that impinges the polishing pad 108 to condition the polishing surface 1 12. For example, the laser beam 140 may be utilized to form groove patterns in or on the polishing surface 1 12 of the polishing pad 108. The laser beam 140 may be a primary beam or a secondary beam that is emitted from a reflective component (not shown) that may be part of the laser source 128. The groove patterns provided in or on the polishing surface 1 12 of the polishing pad 108 may be formed on polishing pads that have a relatively flat or planar polishing surface, and may also be formed on polishing pads that have a non-planar polishing surface. For example, the laser beam 140 may be used to condition polishing pads with a non-planar polishing surface without flattening the polishing surface.

[0025] The laser source 128 may be selected to emit laser beam at a wavelength suitable removing materials from the polishing pad 108. In one embodiment, the laser source 128 may be a laser source in the ultraviolet (UV) spectrum. For example, the laser source 128 may be a UV laser source configured to emitting a laser beam within a range of wavelength between about 400 nm to about 100 nm. In one embodiment, the laser source 128 may be a UV laser source configured to emitting a laser beam within a range of wavelength between about 200 nm to about 100 nm.

[0026] The support member 130 may house drive components to selectively control the vertical position (in the Z axis) and/or the angle a of one of the conditioner head 126 and the laser source 128 relative to the plane of the polishing surface 1 12 of the polishing pad 108.

[0027] In one embodiment, the laser conditioner device 124 may include a signal generator 138 configured to generate signals that control characteristics of the laser beam 140 to the laser source 128. For example, the signal generator 138 may generate signals to control a spot size of the laser beam 140, a pulse frequency of the laser beam 140, a length of pulse of the laser beam 140, an angle of incidence of the laser beam 140, an intensity of the laser beam 140, or combinations thereof. In one embodiment, the signal generator 138 may be a controllable power supply. The signal generator 138 may be connected to the system controller 1 10.

[0028] Signal members 136 may be coupled between the signal generator 138 and the laser source 128 to transfer signals that control characteristics of the laser beam 140 to the laser source 128. The signal members 138 may be disposed along the support member 130 and/or the support arm 132. In one embodiment, the signal members 136 may be wires or optical fibers.

[0029] The actuator 134 may also provide vertical positioning of the support member 130 (in the Z direction) to provide height control of the conditioner head 126 relative to the polishing pad 108. In some embodiments, the actuator 134 may also be used to provide contact between the polishing pad 108 and the conditioner head 126, as well as urge the conditioner head 126 against the polishing surface 1 12 of the polishing pad 108 with a controllable downforce. In one embodiment (not shown), the conditioner head 126 may include a housing that contacts the polishing pad 108 during conditioning. The housing may be coupled to a vacuum device (not shown) and/or a fluid source (not shown) to facilitate removal of materials that are released from the polishing surface 1 12 of the polishing pad 108 during conditioning. The actuator 134 may be coupled to the system controller 1 10.

[0030] The laser conditioner device 124 may be used to regenerate, modify, and or maintain the pattern on the polishing surface 1 12 of the polishing pad 108 by directing the laser beam 140 to the polishing surface 1 12 in a controlled manner. Various parameters may be controlled to achieve desired surface profile on the polishing surface 1 12. In one embodiment, at least one of spot size, pulse frequency, length of pulse, an angle of incidence, and/or intensity of the laser beam 140 may be adjusted. Additionally, relative speed and relative positions between the polishing pad 108 and the laser source 128 may be controlled to achieve desired results. The relative speed and relative position may be controlled by controlling the rotational speed and/or angle of the actuator 134 of the laser conditioner device 124 and the drive motor 106 of the platen 102.

[0031] In one embodiment, the polishing station 100 also includes a scrubbing assembly 144 positioned to selectively contact the polishing surface 1 12. The scrubbing assembly 144 may include a scrubbing head 146 having a scrubbing disk 148 disposed thereon. The scrubbing head 146 rotatable about an axis E so that the scrubbing disk 148 may be moved relative to the polishing pad 108 while in contact with the polishing pad 108. The scrubbing head 146 may be attached to a supporting arm 150. The supporting arm 150 may be movably coupled to the platen 104. An actuator 152 may be coupled to the supporting arm 150. The actuator 152 may rotate the supporting arm 150 about an axis D to position the scrubbing head 146 at various radial locations of the polishing pad 108. In one embodiment, the actuator 152 may also move the supporting arm 150 vertically to bring the scrubbing disk 148 into contact with the polishing pad 108 and to lift the scrubbing disk 148 out of the polishing pad 108. The actuator 152 may be also used to apply a down force to the polishing pad 108 through the supporting arm 150 and the scrubbing disk 148.

[0032] The scrubbing assembly 144 may be used to remove loose material from the polishing pad 108 and/or remove material from the polishing pad 108. As discussed above, the laser conditioner device 124 removes a portion of pad material from the polishing surface 1 12 to condition the polishing pad 108. A first portion, for example most, of the material removed by the laser conditioner device 124 evaporates while a second portion of the removed material may remain on the polishing pad 108. The second portion of material remaining on the polishing surface 1 12 may cause defect in the substrate during polishing. The scrubbing assembly 144 may be used to remove the second portion of material from the polishing pad 108. The scrubbing assembly 144 may also be used to remove additional material from the polishing surface 1 12 of the polishing pad 108 when using the laser conditioner device 124 alone cannot achieve desired material removal rate. [0033] In one embodiment, the scrubbing disk 148 may be a soft scrubbing disk so that loose material may be removed without any undesirable scratching of the polishing pad. The scrubbing disk 148 may be a brush with bristles 148a made of corrosion resistance polymeric materials. In one embodiment, the bristles 148a may be made of polymeric materials filled with abrasive materials, such as silicon carbide, silica, alumina, and other suitable materials. The bristles 148a may have a diameter between about 0.001 inch to about 0.1 inch. In one embodiment, the bristles may have a diameter may be between the range between about 0.005 inch to about 0.01 inch. The bristles 148a may have a length between about 0.1 inch to about 0.5 inch.

[0034] In another embodiment, the scrubbing disk 148 may be made of tough material so that a down force may be applied to the scrubbing disk 148 to cut material from the polishing pad 108. For example, the scrubbing disk 148 is made of a rigid material having an undulated surface. For example, the scrubbing disk 148 may be a disk made of rigid material, such as stainless steel or silicon carbide, having an undulated surface made of rigid materials. In another embodiment, the scrubbing disk 148 may be a diamond pad having diamond size between about 60 urn and about 250 urn.

[0035] Conditioning process according to the present disclosure may be performed during polishing (in situ) or during a rest period when polishing of the substrate is not performed.

[0036] Figure 2 is a top plan view of the polishing station 100 showing the polishing surface 1 12 of the polishing pad 108 being conditioned during polishing. The polishing surface 1 12 facilitates removal of material from a substrate 1 16 and/or fluid transport during polishing. The polishing surface 1 12 may include marks, such as grooves and channels, formed in the polishing pad 108 to a desired depth. The marks may be linear or curved, zigzagged, and may have a radial, grid, spiral or circular orientation on the polishing pad 108. The marks may be intersecting or non-intersecting. Alternatively or additionally, the polishing surface 1 12 of the polishing pad 108 may be embossed.

[0037] The depth of the marks affects the polishing removal rate of the polishing surface 1 12 from the substrate 1 16. The depth of the marks reduces as the polishing pad 108 becomes worn. The polishing removal rate will reduce and/or become non-uniform. The depth of the marks may be maintained by a conditioning processing.

[0038] According to the present disclosure, the polishing surface 1 12 may be conditioned using the laser conditioner device 124. The scrubbing assembly 144 may be used to remove the loose material from the polishing surface 1 12 by moving the scrubbing disk 148 relative to and while in contact with the polishing surface 1 12. In one embodiment, a high abrasive scrubbing disk 148 may include abrasives used to cut material from the polishing pad 108.

[0039] During conditioning, the polishing pad 108 may be rotated at about 0.5 revolutions per minute (rpm) to about 122 rpm while forming or maintaining the mark and/or groove patterns on the polishing surface 1 12 of the polishing pad 108. The pattern of marks on the polishing surface 1 12 of the polishing pad 108 may include a pitch of about 50 microns (μιη) to about 1000 μιη. In one embodiment, at least a portion of the marks formed in the polishing surface 1 12 of the polishing pad 108 may include a width of about 50 μιη to about 500 μιη. The marks formed in the polishing surface 1 12 of the polishing pad 108 may include a depth of about 5 μιη to about 250 μιη, such as about 25 μιη to about 1 12 μιη. The width and/or depth of the marks formed in the polishing surface 1 12 of the polishing pad 108 may be maintained during the entire lifetime of the polishing pad 108 using the laser source 128. For example, the laser source 128 may be used to refresh the width and/or depth of the marks during polishing processes, or in between polishing processes. In one embodiment, the laser source 128 is used to refresh the width and/or depth of the marks between each substrate 1 16 that is polished on the polishing pad 108, such as after polishing a first substrate and before polishing a second substrate. In another embodiment, the laser source 128 is used to refresh the width and/or depth of the marks, as necessary, which may be subsequent to a polishing process performed on more than one substrate 1 16 (e.g., two or more substrates).

[0040] In one example of operation of the laser conditioner device 124, the support member 130 may be rotatable in order to move the conditioner head 126 (with the laser beam 140 exerting therefrom) on the support arm 132 in a sweep pattern across the polishing surface 1 12 of the polishing pad 108. In one aspect, the rotational movement of the polishing pad 108 during processing is utilized in conjunction with the application of optical energy from the laser source 128 of the laser conditioner device 124 and/or the sweep pattern to form the pattern of marks on the polishing surface 1 12 of the polishing pad 108.

[0041] In one embodiment, the rotational movement of the polishing pad 108 during processing is utilized in conjunction with the application of the scrubbing disk 148 of the scrubbing assembly 144. In one embodiment, a scrubbing disk having bristles may be used to remove loose materials from the polishing pad 108.

[0042] In one embodiment, a rigid scrubbing disk may be used along with the laser conditioner device 124 to remove pad material from the polishing pad to achieve desired conditioning process.

[0043] In one embodiment, pad cleaning chemicals may be used to improve material removal in conjunction with the laser conditioner device 124 and the scrubbing assembly 144. The pad clean chemical may either be acidic or alkaline in nature.

[0044] Pad conditioning may be performed in ex-situ mode (performed before polishing), or in in-situ mode (performed during polishing). In ex-situ conditioning mode, a polishing pad may be conditioned by a laser conditioner device, such as the laser conditioner device 124, with pressurized water. Alternatively, when a pad clean chemical is used during pad conditioning, a pad rinse with pressurized water may follow to prevent cross contamination between pad clean chemical and polishing slurry.

[0045] In in-situ conditioning mode, a polishing pad is conditioned by a laser conditioner device during polishing. Due to the fact that different kinds of polishing pads have different polishing properties, a scrubbing disk, such as the scrubbing disk 148, may be used in either ex -situ mode, in-situ mode, or both to achieve desired polishing rate and defect performance.

[0046] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

Claims:

1 . A polishing station, comprising:

a polishing table configured to support a polishing pad for polishing a substrate by chemical mechanical polishing;

a laser source disposed adjacent the polishing table, wherein the laser source is positioned to direct a laser beams towards the polishing table to regenerate the polishing pad through a conditioning process while the polishing pad is disposed on the polishing table;

a scrubbing disk disposed on a supporting arm, wherein the supporting arm is movable relative to the polishing table so that the scrubbing disk selectively contacts the polishing pad disposed on the polishing table.

2. The polishing station of claim 1 , wherein the laser source is an ultraviolet laser source.

3. The polishing station of claim 1 , wherein the scrubbing disk comprises bristles made of a polymeric material.

4. The polishing station of claim 3, wherein the polymeric material is filled with an abrasive material.

5. The polishing station of claim 4, wherein the abrasive material comprises silicon carbide, silica, alumina, or combinations thereof.

6. The polishing station of claim 3, wherein the bristles have a diameter between about 0.001 inch to about 0.1 inch, and a length between 0.1 inch to about 0.5 inch.

7. The polishing station of claim 1 , wherein the scrubbing disk comprises an undulated surface.

8. The polishing station of claim 7, wherein the undulated surface is made of stainless steel or silicon carbide.

9. The polishing station of claim 1 , wherein the scrubbing disk comprises a diamond pad.

10. The polishing station of claim 9, wherein the diamond pad comprises diamond particles having a diameter between about 60 microns to about 250 microns.

1 1 . A method for conditioning a polishing pad for chemical mechanical polishing, comprising:

directing a laser beam in contact with the polishing pad while the laser beam and the polishing pad move relative to each other;

cutting material from a polishing surface of the polishing pad using the laser beam; and

contacting the polishing surface with a scrubbing disk to remove material cut by the laser beam from the polishing surface.

12. The method of claim 1 1 , further comprising scanning the polishing surface with the laser beam to form a groove pattern in the polishing surface.

13. The method of claim 12, further comprising adjusting one or more conditioning parameters to while scanning the polishing surface to form the groove pattern.

14. The method of claim 1 1 , wherein contacting the polishing surface comprises contacting the polishing surface with a scrubbing disk having bristles.

15. The method of claim 1 1 , further comprising:

increasing a material removal rate from the polishing pad by applying a down force to the polishing surface using the scrubbing disk.