JP5671243B2 - 投影露光方法、投影露光システム、及び投影対物系 - Google Patents

投影露光方法、投影露光システム、及び投影対物系 Download PDF

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JP5671243B2
JP5671243B2 JP2010047084A JP2010047084A JP5671243B2 JP 5671243 B2 JP5671243 B2 JP 5671243B2 JP 2010047084 A JP2010047084 A JP 2010047084A JP 2010047084 A JP2010047084 A JP 2010047084A JP 5671243 B2 JP5671243 B2 JP 5671243B2
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projection
field
projection objective
mirror
objective
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JP2010187002A (ja
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ユルゲンス ディルク
ユルゲンス ディルク
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/702Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
JP2010047084A 2009-02-12 2010-02-12 投影露光方法、投影露光システム、及び投影対物系 Active JP5671243B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09001938.1 2009-02-12
EP09001938A EP2219077A1 (en) 2009-02-12 2009-02-12 Projection exposure method, projection exposure system and projection objective

Related Child Applications (1)

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JP2014147060A Division JP5923559B2 (ja) 2009-02-12 2014-07-17 投影露光方法、投影露光システム、及び投影対物系

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JP2010187002A JP2010187002A (ja) 2010-08-26
JP5671243B2 true JP5671243B2 (ja) 2015-02-18

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JP2010047084A Active JP5671243B2 (ja) 2009-02-12 2010-02-12 投影露光方法、投影露光システム、及び投影対物系
JP2014147060A Active JP5923559B2 (ja) 2009-02-12 2014-07-17 投影露光方法、投影露光システム、及び投影対物系
JP2016082705A Active JP6407193B2 (ja) 2009-02-12 2016-04-18 投影露光方法、投影露光システム、及び投影対物系
JP2018173273A Abandoned JP2019020739A (ja) 2009-02-12 2018-09-18 投影露光方法、投影露光システム、及び投影対物系

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JP2014147060A Active JP5923559B2 (ja) 2009-02-12 2014-07-17 投影露光方法、投影露光システム、及び投影対物系
JP2016082705A Active JP6407193B2 (ja) 2009-02-12 2016-04-18 投影露光方法、投影露光システム、及び投影対物系
JP2018173273A Abandoned JP2019020739A (ja) 2009-02-12 2018-09-18 投影露光方法、投影露光システム、及び投影対物系

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US (5) US8873022B2 (OSRAM)
EP (1) EP2219077A1 (OSRAM)
JP (4) JP5671243B2 (OSRAM)
TW (1) TWI494705B (OSRAM)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2219077A1 (en) * 2009-02-12 2010-08-18 Carl Zeiss SMT AG Projection exposure method, projection exposure system and projection objective
CN103443863B (zh) 2011-03-23 2017-03-08 卡尔蔡司Smt有限责任公司 Euv反射镜布置、包括euv反射镜布置的光学系统以及操作包括euv反射镜布置的光学系统的方法
TWI587077B (zh) * 2012-03-07 2017-06-11 尼康股份有限公司 光罩、光罩單元、曝光裝置、基板處理裝置、及元件製造方法
DE102012211256A1 (de) * 2012-06-29 2014-01-02 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Projektionslithographie
US9651872B2 (en) 2013-03-13 2017-05-16 Carl Zeiss Smt Gmbh Projection lens with wavefront manipulator
US9298102B2 (en) * 2013-03-13 2016-03-29 Carl Zeiss Smt Gmbh Projection lens with wavefront manipulator
US9690189B2 (en) * 2013-06-21 2017-06-27 Hoya Corporation Mask blank substrate, mask blank, transfer mask, and method of manufacturing semiconductor device
JP6282742B2 (ja) * 2013-09-09 2018-02-21 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置及びそのような装置における光学波面変形を補正する方法
US9516729B2 (en) * 2014-12-16 2016-12-06 Asml Netherlands B.V. Variable radius mirror dichroic beam splitter module for extreme ultraviolet source
DE102015218329A1 (de) * 2015-09-24 2017-03-30 Carl Zeiss Smt Gmbh Optische Korrekturanordnung, Projektionsobjektiv mit einer solchen optischen Korrekturanordnung sowie mikrolithografische Apparatur mit einem solchen Projektionsobjektiv
DE102016205072A1 (de) * 2016-03-29 2017-03-16 Carl Zeiss Smt Gmbh Optisches System für die Mikrolithografie sowie Verfahren zum Betreiben eines optischen Systems für die Mikrolithografie
KR102199133B1 (ko) 2016-08-11 2021-01-07 에이에스엠엘 홀딩 엔.브이. 파면의 가변 정정기
WO2018113917A1 (de) * 2016-12-20 2018-06-28 Ev Group E. Thallner Gmbh Vorrichtung und verfahren zur belichtung einer lichtempfindlichen schicht
JP7340609B2 (ja) * 2019-01-18 2023-09-07 エーエスエムエル ネザーランズ ビー.ブイ. 投影システム及び投影システムを備えるリソグラフィ装置
JP7178932B2 (ja) * 2019-03-12 2022-11-28 キヤノン株式会社 露光装置、および物品製造方法
JP7730625B2 (ja) 2020-09-01 2025-08-28 キヤノン株式会社 成形装置、成形方法、およびテンプレート
KR20230130117A (ko) 2021-01-19 2023-09-11 칼 짜이스 에스엠티 게엠베하 투영 노광 시스템을 설정하는 방법, 마이크로리소그래피용투영 노광 방법 및 투영 노광 시스템
US11852980B2 (en) * 2021-03-05 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Techniques for correction of aberrations

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226507A (en) 1979-07-09 1980-10-07 The Perkin-Elmer Corporation Three actuator deformable specimen
US4647164A (en) 1985-11-21 1987-03-03 The United States Of America As Represented By The United States Department Of Energy Apparatus for and method of correcting for astigmatism in a light beam reflected off of a light reflecting surface
JP3341269B2 (ja) 1993-12-22 2002-11-05 株式会社ニコン 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法
JP3303758B2 (ja) * 1996-12-28 2002-07-22 キヤノン株式会社 投影露光装置及びデバイスの製造方法
DE69728126T2 (de) 1996-12-28 2005-01-20 Canon K.K. Projektionsbelichtungsapparat und Verfahren zur Herstellung einer Vorrichtung
JPH1145846A (ja) 1997-07-25 1999-02-16 Nikon Corp 走査型露光方法及び装置
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
US7112772B2 (en) 1998-05-29 2006-09-26 Carl Zeiss Smt Ag Catadioptric projection objective with adaptive mirror and projection exposure method
DE19824030A1 (de) 1998-05-29 1999-12-02 Zeiss Carl Fa Katadioptrisches Projektionsobjektiv mit adaptivem Spiegel und Projektionsbelichtungsverfahren
JPH11354410A (ja) * 1998-06-09 1999-12-24 Sony Corp 露光装置および露光方法
JP2000019165A (ja) 1998-06-30 2000-01-21 Shimadzu Corp ガスクロマトグラフ装置
TW490596B (en) 1999-03-08 2002-06-11 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the lithographic projection apparatus, device manufactured according to the method and method of calibrating the lithographic projection apparatus
TW575771B (en) * 2000-07-13 2004-02-11 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2002037545A (ja) 2000-07-26 2002-02-06 Matsushita Electric Works Ltd エレベータのブレーキ制御回路
DE10046379A1 (de) 2000-09-20 2002-03-28 Zeiss Carl System zur gezielten Deformation von optischen Elementen
WO2002037545A1 (en) 2000-10-31 2002-05-10 Nikon Corporation Exposure method and system
JP4191923B2 (ja) * 2001-11-02 2008-12-03 株式会社東芝 露光方法および露光装置
JP3799275B2 (ja) 2002-01-08 2006-07-19 キヤノン株式会社 走査露光装置及びその製造方法並びにデバイス製造方法
DE10222331A1 (de) 2002-05-18 2003-11-27 Zeiss Carl Smt Ag Verfahren zur gezielten Deformation eines optischen Elements
US20030234918A1 (en) 2002-06-20 2003-12-25 Nikon Corporation Adjustable soft mounts in kinematic lens mounting system
US6880942B2 (en) 2002-06-20 2005-04-19 Nikon Corporation Adaptive optic with discrete actuators for continuous deformation of a deformable mirror system
JP2004056125A (ja) 2002-06-20 2004-02-19 Nikon Corp 個別アクチュエータを有する反射投影光学系
US7158215B2 (en) * 2003-06-30 2007-01-02 Asml Holding N.V. Large field of view protection optical system with aberration correctability for flat panel displays
US7196772B2 (en) 2003-11-07 2007-03-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1705694A4 (en) * 2004-01-06 2007-10-31 Nikon Corp EXPOSURE METHOD AND DEVICE AND COMPONENTS MANUFACTURING METHOD
CN102207608B (zh) 2004-01-14 2013-01-02 卡尔蔡司Smt有限责任公司 反射折射投影物镜
WO2006001300A1 (ja) 2004-06-23 2006-01-05 Daiso Co., Ltd. 高耐久性液体クロマトグラフィー用充填剤
US7423765B2 (en) 2004-07-31 2008-09-09 Carl Zeiss Smt Ag Optical system of a microlithographic projection exposure apparatus
WO2006013100A2 (en) 2004-08-06 2006-02-09 Carl Zeiss Smt Ag Projection objective for microlithography
FR2877104B1 (fr) * 2004-10-27 2006-12-29 Sagem Dispositif d'imagerie ou d'insolation, notamment pour la realisation d'un micro-circuit electronique
US7184124B2 (en) 2004-10-28 2007-02-27 Asml Holding N.V. Lithographic apparatus having an adjustable projection system and device manufacturing method
JP4980922B2 (ja) * 2004-11-18 2012-07-18 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置及びマイクロリソグラフィ投影露光装置の像面湾曲を修正するための方法
JP4817702B2 (ja) * 2005-04-14 2011-11-16 キヤノン株式会社 光学装置及びそれを備えた露光装置
US7443484B2 (en) * 2005-05-13 2008-10-28 Infineon Technologies Ag Method for exposing a semiconductor wafer by applying periodic movement to a component
CN100474115C (zh) * 2006-04-04 2009-04-01 上海微电子装备有限公司 光刻机成像光学系统像差现场测量方法
US8197076B2 (en) * 2006-05-11 2012-06-12 Massachusetts Institute Of Technology Magnetic membrane mirror
DE102006024810A1 (de) 2006-05-27 2007-11-29 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage sowie adaptiver Spiegel hierfür
EP1890191A1 (en) * 2006-08-14 2008-02-20 Carl Zeiss SMT AG Catadioptric projection objective with pupil mirror
DE102006045075A1 (de) 2006-09-21 2008-04-03 Carl Zeiss Smt Ag Steuerbares optisches Element
EP1998223A2 (de) 2007-01-23 2008-12-03 Carl Zeiss SMT AG Projektionsobjektiv für die Lithographie
US20090042139A1 (en) 2007-04-10 2009-02-12 Nikon Corporation Exposure method and electronic device manufacturing method
US20090042115A1 (en) 2007-04-10 2009-02-12 Nikon Corporation Exposure apparatus, exposure method, and electronic device manufacturing method
DE102008001800A1 (de) * 2007-05-25 2008-11-27 Carl Zeiss Smt Ag Projektionsobjektiv für die Mikrolithographie, Mikrolithographie-Projektionsbelichtungsanlage mit einem derartigen Projektionsobjektiv, mikrolithographisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement
JP2008292801A (ja) * 2007-05-25 2008-12-04 Canon Inc 露光装置および方法
US8440375B2 (en) 2007-05-29 2013-05-14 Nikon Corporation Exposure method and electronic device manufacturing method
JP5406437B2 (ja) * 2007-06-22 2014-02-05 キヤノン株式会社 露光装置及びデバイス製造方法
JP5033724B2 (ja) * 2007-07-12 2012-09-26 株式会社沖データ 文書検索装置及び画像形成装置、文書検索システム
WO2009013230A1 (en) * 2007-07-23 2009-01-29 Carl Zeiss Smt Ag Optical system of a microlithographic projection exposure apparatus
JP5462791B2 (ja) 2007-08-03 2014-04-02 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィのための投影対物系、投影露光装置、及び投影露光方法
US7993780B2 (en) 2007-10-05 2011-08-09 Nanotek Instruments, Inc. Process for producing carbon anode compositions for lithium ion batteries
JP5105474B2 (ja) * 2007-10-19 2012-12-26 国立大学法人東京農工大学 露光装置及びデバイス製造方法
EP2219077A1 (en) * 2009-02-12 2010-08-18 Carl Zeiss SMT AG Projection exposure method, projection exposure system and projection objective

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Publication number Publication date
US20150049320A1 (en) 2015-02-19
JP2016164675A (ja) 2016-09-08
US20180059548A1 (en) 2018-03-01
EP2219077A1 (en) 2010-08-18
US20150227052A1 (en) 2015-08-13
JP5923559B2 (ja) 2016-05-24
US8873022B2 (en) 2014-10-28
US9678440B2 (en) 2017-06-13
US9036129B2 (en) 2015-05-19
US20160320707A1 (en) 2016-11-03
JP2010187002A (ja) 2010-08-26
TW201104358A (en) 2011-02-01
JP6407193B2 (ja) 2018-10-17
TWI494705B (zh) 2015-08-01
JP2019020739A (ja) 2019-02-07
JP2014239240A (ja) 2014-12-18
US20100201962A1 (en) 2010-08-12

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