JP5667748B2 - 光透過型太陽電池およびその製造方法 - Google Patents

光透過型太陽電池およびその製造方法 Download PDF

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Publication number
JP5667748B2
JP5667748B2 JP2009066169A JP2009066169A JP5667748B2 JP 5667748 B2 JP5667748 B2 JP 5667748B2 JP 2009066169 A JP2009066169 A JP 2009066169A JP 2009066169 A JP2009066169 A JP 2009066169A JP 5667748 B2 JP5667748 B2 JP 5667748B2
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layer
light incident
photoelectric conversion
incident surface
surface side
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JP2010219408A5 (enExample
JP2010219408A (ja
Inventor
栄 史 堤
栄 史 堤
永 く み 益
永 く み 益
川 良 太 北
川 良 太 北
西 務 中
西 務 中
本 明 藤
本 明 藤
沢 秀 之 西
沢 秀 之 西
川 鋼 児 浅
川 鋼 児 浅
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Toshiba Corp
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Toshiba Corp
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Priority to JP2009066169A priority Critical patent/JP5667748B2/ja
Priority to US12/700,063 priority patent/US9136405B2/en
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Publication of JP2010219408A5 publication Critical patent/JP2010219408A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Photovoltaic Devices (AREA)
JP2009066169A 2009-03-18 2009-03-18 光透過型太陽電池およびその製造方法 Expired - Fee Related JP5667748B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009066169A JP5667748B2 (ja) 2009-03-18 2009-03-18 光透過型太陽電池およびその製造方法
US12/700,063 US9136405B2 (en) 2009-03-18 2010-02-04 Light transmission type solar cell and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009066169A JP5667748B2 (ja) 2009-03-18 2009-03-18 光透過型太陽電池およびその製造方法

Publications (3)

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JP2010219408A JP2010219408A (ja) 2010-09-30
JP2010219408A5 JP2010219408A5 (enExample) 2011-05-06
JP5667748B2 true JP5667748B2 (ja) 2015-02-12

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JP2009066169A Expired - Fee Related JP5667748B2 (ja) 2009-03-18 2009-03-18 光透過型太陽電池およびその製造方法

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US (1) US9136405B2 (enExample)
JP (1) JP5667748B2 (enExample)

Families Citing this family (16)

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JP2010219407A (ja) 2009-03-18 2010-09-30 Toshiba Corp メッシュ構造を有する電極を具備した太陽電池及びその製造方法
JP5525314B2 (ja) * 2009-05-02 2014-06-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI424576B (zh) * 2010-04-30 2014-01-21 Axuntek Solar Energy 穿透式太陽能電池模組及其製造方法
US8563351B2 (en) * 2010-06-25 2013-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing photovoltaic device
CN102082186B (zh) * 2010-10-29 2013-05-08 华南师范大学 电极及其制造方法
KR102391529B1 (ko) * 2011-01-26 2022-04-28 메사추세츠 인스티튜트 오브 테크놀로지 투명 태양광 전지
JP5433609B2 (ja) 2011-03-03 2014-03-05 株式会社東芝 半導体発光素子及びその製造方法
JP5681607B2 (ja) * 2011-03-28 2015-03-11 株式会社東芝 光電変換素子
TWI455330B (zh) * 2011-03-31 2014-10-01 Gintech Energy Corp 太陽能電池結構及其製造方法
TWI470816B (zh) * 2011-12-28 2015-01-21 Au Optronics Corp 太陽能電池
KR101195927B1 (ko) * 2012-07-06 2012-10-30 한국기계연구원 박막 태양전지 및 그 제조방법
US9859452B1 (en) * 2016-06-30 2018-01-02 International Business Machines Corporation Fabrication of thin-film photovoltaic cells with reduced recombination losses
CN107564980B (zh) * 2016-07-01 2020-03-31 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
KR102365141B1 (ko) * 2019-09-17 2022-02-21 울산과학기술원 공극을 포함하는 투명 태양전지 및 이의 제조방법
US12046693B2 (en) * 2021-09-01 2024-07-23 Maxeon Solar Pte. Ltd. Solar device fabrication limiting power conversion losses
KR102791182B1 (ko) * 2023-01-03 2025-04-02 인천대학교 산학협력단 2차원나노물질을 포함하는 광음극층 기반 광전기화학전지 시스템 및 이의 제조방법

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US4795500A (en) * 1985-07-02 1989-01-03 Sanyo Electric Co., Ltd. Photovoltaic device
JPS63234567A (ja) 1987-03-24 1988-09-29 Nippon Denso Co Ltd 透光性太陽電池
JPH02286426A (ja) 1989-04-28 1990-11-26 Asahi Glass Co Ltd 太陽電池付窓ガラス
JPH02312285A (ja) 1989-05-26 1990-12-27 Fuji Electric Corp Res & Dev Ltd 光透過型薄膜太陽電池
GB2260220B (en) * 1991-09-10 1996-01-03 Sanyo Electric Co An amorphous silicon solar cell and method of the solar cell manufacture
JPH05145096A (ja) 1991-11-22 1993-06-11 Asahi Glass Co Ltd 透過型太陽電池
DE69831860T2 (de) * 1998-07-04 2006-07-20 Au Optronics Corp. Elektrode zur verwendung in elektrooptischen bauelementen
JP3940546B2 (ja) * 1999-06-07 2007-07-04 株式会社東芝 パターン形成方法およびパターン形成材料
US6441298B1 (en) * 2000-08-15 2002-08-27 Nec Research Institute, Inc Surface-plasmon enhanced photovoltaic device
JP2003160883A (ja) 2001-11-27 2003-06-06 Toshiba Corp 微粒子配列方法と微粒子配列装置
JP4068578B2 (ja) * 2004-02-18 2008-03-26 株式会社東芝 微細凸凹パターンの形成方法
JP4954498B2 (ja) * 2004-06-01 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI366218B (en) * 2004-06-01 2012-06-11 Semiconductor Energy Lab Method for manufacturing semiconductor device
US7964788B2 (en) * 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080142075A1 (en) * 2006-12-06 2008-06-19 Solexant Corporation Nanophotovoltaic Device with Improved Quantum Efficiency
JP2008275526A (ja) 2007-05-02 2008-11-13 Sony Corp 表面プラズモン共鳴測定用センサチップ、表面プラズモン共鳴測定装置、並びにその測定方法
US8372476B2 (en) * 2007-05-02 2013-02-12 Sony Corporation Method of plasmonic crystal
JP5038030B2 (ja) 2007-06-14 2012-10-03 キヤノン株式会社 センシング方法およびセンシング装置
JP5571870B2 (ja) * 2007-09-21 2014-08-13 株式会社東芝 極微細構造を有する光透過型金属電極およびその製造方法
JP5283926B2 (ja) * 2008-02-25 2013-09-04 株式会社東芝 光透過型金属電極およびその製造方法

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Publication number Publication date
US20100236619A1 (en) 2010-09-23
US9136405B2 (en) 2015-09-15
JP2010219408A (ja) 2010-09-30

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