JP5663658B2 - プラズマ評価方法、プラズマ処理方法及びプラズマ処理装置 - Google Patents
プラズマ評価方法、プラズマ処理方法及びプラズマ処理装置 Download PDFInfo
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- 238000011156 evaluation Methods 0.000 title claims description 30
- 238000003672 processing method Methods 0.000 title description 8
- 239000007789 gas Substances 0.000 claims description 147
- 150000004767 nitrides Chemical class 0.000 claims description 55
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 28
- 238000000231 atomic layer deposition Methods 0.000 claims description 23
- 238000001228 spectrum Methods 0.000 claims description 19
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 42
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 42
- 238000001039 wet etching Methods 0.000 description 27
- 238000010926 purge Methods 0.000 description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 16
- 238000003860 storage Methods 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 7
- 238000005121 nitriding Methods 0.000 description 7
- 239000002210 silicon-based material Substances 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- -1 NH 3 gas Chemical compound 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000012854 evaluation process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Description
(1)処理チャンバ内において成膜材料を基板上に吸着させる。
(2)余分に吸着した成膜材料をパージガスにより除去する。
(3)窒素原子を含むガスから生成されるプラズマを用いて成膜材料をプラズマ窒化処理する。
(4)処理チャンバ内に残存するガスをパージガスにより除去する。
Slot Antenna;RLSA:登録商標)26とを備える。マイクロ波発生器18は、導波管20を介して、マイクロ波のモードを変換するモード変換器22に接続されている。モード変換器22は、内側導波管24a及び外側導波管24bを有する同軸導波管24を介してラジアルラインスロットアンテナ26に接続されている。これにより、マイクロ波発生器18によって発生したマイクロ波は、モード変換器22においてモード変換され、ラジアルラインスロットアンテナ26に到達する。マイクロ波発生器18が発生するマイクロ波の周波数は、例えば2.45GHzである。
Control)バルブ38を介して真空ポンプ40が接続されている。基板ホルダ14には、基板ホルダ14の温度を調節するための温度調節器42が接続されている。基板ホルダ14の温度は、例えば200〜500℃が好ましく、より好ましくは300〜400℃に調節される。
まず、図2に示される光検出器70によって、ガスGから生成されるプラズマPからの発光を検出する(工程S1)。光検出器70によって得られたプラズマ発光強度の分光スペクトルデータは、記憶装置56bに記録される。
工程S1の後、制御部56によって、検出されたプラズマ発光強度の分光スペクトルにおいて水素原子に起因する第1のピークと第1のピークとは異なり水素原子に起因する第2のピークとの強度比を算出する。一方、当該強度比と窒化膜の膜質を表す指標(例えば0.5%フッ酸水溶液に対する窒化膜のウェットエッチングレート)との関係から、予め窒化膜の膜質が良好であるか否かの閾値に対応する基準値を算出しておく。その後、制御部56によって、強度比を基準値と比較した結果を用いてプラズマPの評価を行う(工程S2)。工程S2では、例えば強度比が基準値以上か否かを判断する。
工程S2の後、強度比I656/I486が基準値よりも小さい場合、強度比I656/I486が基準値以上となるようにプラズマPの条件を変更してもよい(工程S3)。これにより、プラズマ条件を、良好な膜質の窒化膜を形成可能なプラズマ条件に変更することができる。変更可能なプラズマPの条件としては、マイクロ波発生器18に供給されるマイクロ波出力、処理チャンバ12内の圧力、基板ホルダ14の温度、ガスGのガス種、ガス流量、流量比及びガスを流す時間、ガスGを供給する場所等が挙げられる。これらの中でプラズマPの状態に及ぼす影響が大きいのは、マイクロ波発生器18に供給されるマイクロ波出力、処理チャンバ12内の圧力である。
ガス1:NH3、Ar及びN2の混合ガス
ガス2:NH3及びArの混合ガス
ガス3:NH3及びN2の混合ガス
ガス4:NH3
ガス5:N2及びArの混合ガス
ガス6:N2
つまり、NH3を効率良く解離させて水素原子を生成させるためには、NH3にN2やArを混合することが有効である。この場合、プラズマ中でN2およびArが励起する際に高速電子が生成されるので、この電子がNH3を解離し易くし、効率良く水素原子が生成されると考えられる。
この場合、プラズマガス(Ar+N2)に対するNH3ガスの流量比は、ガス1では0.15、ガス2では0.5、ガス3では0.5、ガス4では1である。好ましい流量比は1未満であり、より好ましくは、0.8以下であり、0.5以下0.05以上が良い。
(ステップ1)処理チャンバ12内において、例えばジクロロシラン等の原料ガスを基板W上に吸着させてシリコン含有化合物を生成する(時刻t1〜t2)。一例において、原料ガスは、Ar(ガス供給口12bからの流量:900sccm)、N2(ガス供給口12bからの流量:900sccm)及びジクロロシラン(リング部44rからの流量:280sccm)を含む。
(ステップ2)必要に応じて処理チャンバ12内を真空引き(時刻t2〜t3)した後、余分に吸着した原料ガスをパージガスにより除去する(時刻t3〜t4)。一例において、パージガスは、Ar(ガス供給口12bからの流量:900sccm、ガス供給口12d及びエッジリング12eからの流量:500sccm、リング部44rからの流量:500sccm)、N2(ガス供給口12bからの流量:900sccm)及びアンモニア(ガス供給口12d及びエッジリング12eからの流量:400sccm)を含む。
(ステップ3)例えばアンモニア等のガスGから生成されるプラズマPを用いて、基板W上に吸着された原料ガス(シリコン含有化合物)からなる層をプラズマ窒化処理する(時刻t4〜t5)。プラズマPは、マイクロ波のパワー(例えば4000W)をONにすることにより生成される。
(ステップ4)必要に応じて処理チャンバ12内を真空引き(時刻t5〜t6)した後、処理チャンバ12内に残存するガスをパージガスにより除去する(時刻t6〜t7)。ステップ4のパージガスはステップ2のパージガスと同じであってもよい。
以上のようなステップ1〜4を1サイクルとして、所望の膜厚(例えば1〜15nm)のシリコン窒化膜が形成される。
Claims (7)
- 原子層堆積法により窒化膜を形成するためのプラズマを評価するプラズマ評価方法であって、
窒素原子及び水素原子を含むガスから生成される前記プラズマからの発光を検出する工程と、
検出された前記発光の強度の分光スペクトルにおいて水素原子に起因する第1のピークと前記第1のピークとは異なり水素原子に起因する第2のピークとの強度比を、予め前記強度比と前記窒化膜の膜質を表す指標との関係から算出された基準値と比較した結果を用いて、前記プラズマの評価を行う工程と、
を含み、
前記第1のピークのピーク波長が656.2nmであり、前記第2のピークのピーク波長が486.1nmである、プラズマ評価方法。 - 前記プラズマの評価を行う工程の後、前記強度比が前記基準値よりも小さい場合に、前記強度比が前記基準値以上となるように前記プラズマの条件を変更する工程を更に含む、請求項1に記載のプラズマ評価方法。
- 前記プラズマの条件を変更する工程の後、前記プラズマからの発光を検出する工程に戻る、請求項2に記載のプラズマ評価方法。
- 前記プラズマが、マイクロ波によって生成される、請求項1〜3のいずれか一項に記載のプラズマ評価方法。
- 前記プラズマが、ラジアルラインスロットアンテナによって生成される、請求項4に記載のプラズマ評価方法。
- 請求項1〜5のいずれか一項に記載のプラズマ評価方法によって評価された前記プラズマを用いて、基板上に吸着された層に対してプラズマ処理を施す工程を含む、プラズマ処理方法。
- 原子層堆積法により窒化膜を形成するためのプラズマ処理装置であって、
処理チャンバと、
前記処理チャンバ内に、窒素原子及び水素原子を含むガスを供給するガス供給源と、
前記処理チャンバ内に、前記ガスから生成されるプラズマを発生させるプラズマ発生器と、
前記プラズマからの発光を検出する光検出器と、
検出された前記発光の強度の分光スペクトルにおいて水素原子に起因する第1のピークと前記第1のピークとは異なり水素原子に起因する第2のピークとの強度比を、予め前記強度比と前記窒化膜の膜質を表す指標との関係から算出された基準値と比較した結果を用いて、前記プラズマの評価を行う制御部と、
を備え、
前記第1のピークのピーク波長が656.2nmであり、前記第2のピークのピーク波長が486.1nmである、プラズマ処理装置。
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JP5840268B1 (ja) * | 2014-08-25 | 2016-01-06 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
US9576792B2 (en) | 2014-09-17 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of SiN |
KR102186070B1 (ko) * | 2014-09-17 | 2020-12-07 | 세메스 주식회사 | 기판 처리 장치 및 플라즈마 처리 방법 |
US10410857B2 (en) | 2015-08-24 | 2019-09-10 | Asm Ip Holding B.V. | Formation of SiN thin films |
US11056353B2 (en) | 2017-06-01 | 2021-07-06 | Asm Ip Holding B.V. | Method and structure for wet etch utilizing etch protection layer comprising boron and carbon |
JP6823555B2 (ja) * | 2017-07-05 | 2021-02-03 | アークレイ株式会社 | プラズマ分光分析方法 |
US10580645B2 (en) | 2018-04-30 | 2020-03-03 | Asm Ip Holding B.V. | Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors |
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