JP5660122B2 - 放射線検出パネル、放射線画像検出器、放射線検出パネルの製造方法および放射線画像検出器の製造方法 - Google Patents

放射線検出パネル、放射線画像検出器、放射線検出パネルの製造方法および放射線画像検出器の製造方法 Download PDF

Info

Publication number
JP5660122B2
JP5660122B2 JP2012502961A JP2012502961A JP5660122B2 JP 5660122 B2 JP5660122 B2 JP 5660122B2 JP 2012502961 A JP2012502961 A JP 2012502961A JP 2012502961 A JP2012502961 A JP 2012502961A JP 5660122 B2 JP5660122 B2 JP 5660122B2
Authority
JP
Japan
Prior art keywords
substrate
scintillator
adhesive
radiation
detection panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012502961A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2011108156A1 (ja
Inventor
和弥 池田
和弥 池田
英明 宮川
英明 宮川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP2012502961A priority Critical patent/JP5660122B2/ja
Publication of JPWO2011108156A1 publication Critical patent/JPWO2011108156A1/ja
Application granted granted Critical
Publication of JP5660122B2 publication Critical patent/JP5660122B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20185—Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20187—Position of the scintillator with respect to the photodiode, e.g. photodiode surrounding the crystal, the crystal surrounding the photodiode, shape or size of the scintillator
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Toxicology (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2012502961A 2010-03-02 2010-11-19 放射線検出パネル、放射線画像検出器、放射線検出パネルの製造方法および放射線画像検出器の製造方法 Expired - Fee Related JP5660122B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012502961A JP5660122B2 (ja) 2010-03-02 2010-11-19 放射線検出パネル、放射線画像検出器、放射線検出パネルの製造方法および放射線画像検出器の製造方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2010044821 2010-03-02
JP2010044821 2010-03-02
JP2010046017 2010-03-03
JP2010046017 2010-03-03
PCT/JP2010/070660 WO2011108156A1 (fr) 2010-03-02 2010-11-19 Panneau de détection de rayonnement, détecteur d'image à rayonnement, procédé de fabrication de panneau de détection de rayonnement et procédé de fabrication de détecteur d'image à rayonnement
JP2012502961A JP5660122B2 (ja) 2010-03-02 2010-11-19 放射線検出パネル、放射線画像検出器、放射線検出パネルの製造方法および放射線画像検出器の製造方法

Publications (2)

Publication Number Publication Date
JPWO2011108156A1 JPWO2011108156A1 (ja) 2013-06-20
JP5660122B2 true JP5660122B2 (ja) 2015-01-28

Family

ID=44541831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012502961A Expired - Fee Related JP5660122B2 (ja) 2010-03-02 2010-11-19 放射線検出パネル、放射線画像検出器、放射線検出パネルの製造方法および放射線画像検出器の製造方法

Country Status (2)

Country Link
JP (1) JP5660122B2 (fr)
WO (1) WO2011108156A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109073765A (zh) * 2016-03-30 2018-12-21 浜松光子学株式会社 放射器检测器及闪烁器面板

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6241066B2 (ja) * 2013-05-15 2017-12-06 コニカミノルタ株式会社 放射線画像撮影装置
JP6725288B2 (ja) * 2016-03-30 2020-07-15 浜松ホトニクス株式会社 放射線検出器の製造方法
US20240204030A1 (en) * 2021-05-13 2024-06-20 Sony Semiconductor Solutions Corporation Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002518686A (ja) * 1998-06-15 2002-06-25 ゼネラル・エレクトリック・カンパニイ 放射線撮像装置用の丈夫なカバープレート
JP2005182000A (ja) * 2003-11-28 2005-07-07 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
JP2009244690A (ja) * 2008-03-31 2009-10-22 Toray Eng Co Ltd 基板貼合せ方法および基板貼合せ装置
JP2010043887A (ja) * 2008-08-11 2010-02-25 Konica Minolta Medical & Graphic Inc 放射線検出パネルの製造方法、放射線画像検出器の製造方法、放射線検出パネル、および放射線画像検出器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101026644B1 (ko) * 2003-01-08 2011-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
EP1542272B1 (fr) * 2003-10-06 2016-07-20 Semiconductor Energy Laboratory Co., Ltd. Dispositif semiconducteur et méthode pour sa fabrication

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002518686A (ja) * 1998-06-15 2002-06-25 ゼネラル・エレクトリック・カンパニイ 放射線撮像装置用の丈夫なカバープレート
JP2005182000A (ja) * 2003-11-28 2005-07-07 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
JP2009244690A (ja) * 2008-03-31 2009-10-22 Toray Eng Co Ltd 基板貼合せ方法および基板貼合せ装置
JP2010043887A (ja) * 2008-08-11 2010-02-25 Konica Minolta Medical & Graphic Inc 放射線検出パネルの製造方法、放射線画像検出器の製造方法、放射線検出パネル、および放射線画像検出器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109073765A (zh) * 2016-03-30 2018-12-21 浜松光子学株式会社 放射器检测器及闪烁器面板
CN109073765B (zh) * 2016-03-30 2022-07-08 浜松光子学株式会社 放射器检测器及闪烁器面板

Also Published As

Publication number Publication date
WO2011108156A1 (fr) 2011-09-09
JPWO2011108156A1 (ja) 2013-06-20

Similar Documents

Publication Publication Date Title
JP5728250B2 (ja) 放射線検出装置、シンチレータパネル、それらの製造方法、および放射線検出システム
US8822941B2 (en) Radiation detecting panel and radiographic detector
JP5905672B2 (ja) 放射線検出器及びその製造方法
JP5693173B2 (ja) 放射線検出装置及び放射線検出システム
JP2006220439A (ja) シンチレータパネル、放射線検出装置及びその製造方法
JP5906162B2 (ja) 放射線画像検出装置
JP2006189377A (ja) シンチレータパネル、放射線検出装置、及び放射線検出システム
JP2011191290A (ja) 放射線検出装置及び放射線検出システム
WO2014050861A1 (fr) Dispositif de détection d'image radiographique
TWI591368B (zh) Radiation detector and manufacturing method thereof
JP2007071836A (ja) 放射線検出装置及び放射線撮像システム
JP5660122B2 (ja) 放射線検出パネル、放射線画像検出器、放射線検出パネルの製造方法および放射線画像検出器の製造方法
WO2016111093A1 (fr) Détecteur de rayonnement et son procédé de fabrication
JP6005092B2 (ja) 放射線検出装置および放射線検出装置の製造方法
JP5774806B2 (ja) 放射線検出パネルの製造方法および放射線画像検出器の製造方法
JP2010286447A (ja) 放射線検出器及びその製造方法
JP2010261720A (ja) 放射線検出パネルの製造方法および放射線画像検出器の製造方法
JP2017090090A (ja) 放射線検出器及びその製造方法
JP2007057428A (ja) 放射線検出装置及び放射線撮像システム
JP2011174830A (ja) 放射線検出パネルおよび放射線画像検出器
TWI486618B (zh) Radiation detector and manufacturing method thereof
JP2012037454A (ja) 放射線検出器及びその製造方法
JP2012156204A (ja) 放射線検出器及びその製造方法
JP2014059246A (ja) 放射線検出器およびその製造方法
JP2011107002A (ja) 放射線検出パネル、放射線画像検出器、放射線検出パネルの製造方法および放射線画像検出器の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130917

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140930

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141007

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141104

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141117

R150 Certificate of patent or registration of utility model

Ref document number: 5660122

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees