WO2011108156A1 - Panneau de détection de rayonnement, détecteur d'image à rayonnement, procédé de fabrication de panneau de détection de rayonnement et procédé de fabrication de détecteur d'image à rayonnement - Google Patents

Panneau de détection de rayonnement, détecteur d'image à rayonnement, procédé de fabrication de panneau de détection de rayonnement et procédé de fabrication de détecteur d'image à rayonnement Download PDF

Info

Publication number
WO2011108156A1
WO2011108156A1 PCT/JP2010/070660 JP2010070660W WO2011108156A1 WO 2011108156 A1 WO2011108156 A1 WO 2011108156A1 JP 2010070660 W JP2010070660 W JP 2010070660W WO 2011108156 A1 WO2011108156 A1 WO 2011108156A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
scintillator
adhesive
radiation
image detector
Prior art date
Application number
PCT/JP2010/070660
Other languages
English (en)
Japanese (ja)
Inventor
和弥 池田
英明 宮川
Original Assignee
コニカミノルタエムジー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コニカミノルタエムジー株式会社 filed Critical コニカミノルタエムジー株式会社
Priority to JP2012502961A priority Critical patent/JP5660122B2/ja
Publication of WO2011108156A1 publication Critical patent/WO2011108156A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20185—Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20187—Position of the scintillator with respect to the photodiode, e.g. photodiode surrounding the crystal, the crystal surrounding the photodiode, shape or size of the scintillator
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a radiation detection panel, a radiation image detector, a method for manufacturing a radiation detection panel, and a method for manufacturing a radiation image detector.
  • a radiation image detector (Flat Panel Detector (FPD)) using a radiation detection panel in which a plurality of photoelectric conversion elements such as photodiodes are two-dimensionally arranged on a substrate and a scintillator is arranged on the radiation incident side of the photoelectric conversion element Has been developed (see, for example, Patent Document 1).
  • Such a radiation image detector usually converts radiation irradiated to the radiation detection panel into light of other wavelengths such as visible light with a scintillator, and makes the converted light incident on a photoelectric conversion element to charge inside the element. Is generated, and the generated charge is taken out to convert radiation information and finally detect it as an electrical signal.
  • cassette-type radiation image detectors that are portable and can be driven without a cable have been developed.
  • the radiation image detector is configured in this manner, it is possible to perform imaging with a high degree of freedom including portable imaging on the patient's bedside or the like.
  • it can be easily carried, so when there are multiple radiographing rooms, one radiographic image detector is moved to a different radiographing room depending on the application and so on. It is also possible.
  • the radiographic image detector comprised by the portable type in order to make it easier to carry, further weight reduction is desired.
  • the radiation detection panel included in the radiation image detector includes a scintillator substrate having a scintillator formed on one surface, and photoelectric conversion that detects light converted by the scintillator stacked on the lower side of the scintillator and converts it into an electrical signal.
  • the element is configured to include an element substrate formed on one surface, and the like, and has a stacked structure in which these are stacked.
  • a glass substrate having a thickness of about 0.6 mm is used for both the scintillator substrate and the element substrate (see, for example, Patent Document 2).
  • the weight of the radiation detection panel occupies about 1/4 of the total weight of the radiation image detector. ing. Therefore, if the radiation detection panel can be reduced in weight, the radiation image detector can be reduced in weight.
  • a lightweight plastic substrate (resin substrate) having a specific gravity smaller than that of the glass substrate, aluminum, titanium, nickel, copper
  • a method using a graphite substrate (see, for example, Patent Document 3) having a thin film formed on the surface thereof, a method using a thin glass substrate thinner than 0.6 mm, and the like are conceivable.
  • a plastic substrate instead of using a 0.6 mm thick glass substrate, a plastic substrate, a graphite substrate with a thin film of aluminum, titanium, nickel, copper or the like formed on the surface, or a thin glass substrate may be used. If this is done, there will be inconveniences such as inability to maintain the same performance as in the prior art, and inability to manufacture in the same manner as in the past.
  • the scintillator is disposed in an internal space sealed by an element substrate, a scintillator substrate, and an adhesive for bonding the element substrate and the scintillator substrate, but the plastic substrate is a glass substrate. Therefore, if a plastic substrate is used instead of the glass substrate, the inconvenience that the scintillator is likely to deteriorate is caused.
  • a graphite substrate with a thin film of aluminum, titanium, nickel, copper, etc. formed on the surface cannot transmit light, so a thin film of aluminum, titanium, nickel, copper, etc. is formed on the surface instead of a glass substrate.
  • a photo-curing adhesive cannot be used for bonding the element substrate and the scintillator substrate.
  • a thin glass substrate having a thickness of less than 0.6 mm requires less energy and is more easily broken than a glass substrate having a thickness of 0.6 mm. Therefore, a thin glass substrate is used instead of a glass substrate having a thickness of 0.6 mm. Due to the load when the element substrate and the scintillator substrate are bonded together, there arises a disadvantage that the thin glass substrate is cracked or cracked.
  • the present invention has been made in view of the above-described problems.
  • An object of the present invention is to provide a method for manufacturing an image detector.
  • the radiation detection panel of the present invention includes: A first substrate having a plurality of photoelectric conversion elements arranged two-dimensionally on the surface; A scintillator that converts radiation into light is formed on the surface, and the second substrate is disposed in a state where the scintillator and the plurality of photoelectric conversion elements face each other; An adhesive that is disposed in a portion around the plurality of photoelectric conversion elements and the scintillator, and that bonds the first substrate and the second substrate; The adhesive is a photocurable adhesive,
  • the second substrate includes a light transmissive plastic substrate and a light transmissive inorganic thin film formed on at least one surface of the plastic substrate.
  • the radiation detection panel of the present invention is A first substrate having a plurality of photoelectric conversion elements arranged two-dimensionally on the surface; A scintillator that converts radiation into light is formed on the surface, and the second substrate is disposed in a state where the scintillator and the plurality of photoelectric conversion elements face each other; An adhesive that is disposed in a portion around the plurality of photoelectric conversion elements and the scintillator, and that bonds the first substrate and the second substrate;
  • the second substrate includes a glass substrate that is thinner than the first substrate and has the scintillator formed on one surface thereof, and a plastic substrate that is bonded to the other surface of the glass substrate. To do.
  • the radiation image detector of the present invention includes the above-described radiation detection panel of the present invention.
  • the method for producing the radiation detection panel of the present invention comprises: A portion of the first substrate having a plurality of photoelectric conversion elements arranged two-dimensionally on the surface thereof, or a second substrate on the surface of which a scintillator for converting radiation into light is formed.
  • the second substrate includes the scintillator formed on one surface, a glass substrate thinner than the first substrate, a plastic substrate bonded to the other surface of the glass substrate, the glass substrate and the plastic An adhesive layer that releasably adheres to the substrate. Furthermore, after the said adhesive agent hardening process, it has the peeling process which peels the said plastic substrate from the said glass substrate, It is characterized by the above-mentioned.
  • the manufacturing method of the radiation image detector of the present invention is characterized in that the radiation image detector is manufactured using the radiation detection panel manufactured by the above-described manufacturing method of the radiation detection panel of the present invention.
  • the adhesive is a photo-curing adhesive
  • the second substrate is one of a light transmissive plastic substrate and a plastic substrate.
  • a light-transmitting inorganic thin film that forms the surface of the second substrate. That is, since a plastic substrate having a specific gravity smaller and lighter than that of the glass substrate is used as the second substrate, radiation detection is performed as compared with the case where the element substrate and the scintillator substrate are formed of the same thickness glass substrate.
  • the panel can be reduced in weight.
  • the radiation detection panel can be reduced in weight as described above, the radiation image detector can be easily carried especially when the radiation image detector is configured to be portable. It becomes.
  • the weight of the radiation detection panel can be reduced in this way, it is possible to improve the drop strength of the radiation image detector.
  • the plastic substrate is inferior in moisture resistance to the glass substrate, but the second substrate in the present invention has the surface of the second substrate formed of an inorganic thin film. It becomes the structure which can obstruct the inflow of moisture (water vapor
  • the adhesive is a photo-curing adhesive as in the present invention
  • the adhesive cannot be cured, but the second substrate in the present invention Since the plastic substrate and the inorganic thin film included in the second substrate are both light transmissive and can transmit light having a wavelength that cures the adhesive, the first substrate and the first thin film It is possible to prevent the occurrence of inconveniences such as the inability to use a photo-curing adhesive for bonding to the second substrate.
  • the second substrate has a scintillator formed on one surface, a glass substrate thinner than the first substrate, and a glass substrate. It comprises a plastic substrate bonded to the other surface, and an adhesive layer that bonds the glass substrate and the plastic substrate. That is, since a thin glass substrate that is thinner and lighter than the first substrate is used as the second substrate, the first substrate and the second substrate are configured by glass substrates having the same thickness. In comparison, the radiation detection panel can be reduced in weight. In addition, since the radiation detection panel can be reduced in weight as described above, the radiation image detector can be easily carried especially when the radiation image detector is configured to be portable. It becomes. Moreover, since the weight of the radiation detection panel can be reduced in this way, it is possible to improve the drop strength of the radiation image detector.
  • the second substrate in the present invention is formed by attaching a plastic substrate that is less brittle and less fragile than the glass substrate to the thin glass substrate.
  • the second substrate is cracked or cracked by the load when the first substrate and the second substrate are bonded to each other. It is possible to prevent such inconveniences.
  • the manufacturing method of the radiation detection panel of the system like this invention and the manufacturing method of a radiographic image detector, it has the peeling process which peels a plastic substrate from a glass substrate after an adhesive agent hardening process. Therefore, by performing the peeling step after the adhesive curing step, the plastic substrate can be peeled off from the glass substrate after the first substrate and the second substrate are bonded together. It becomes possible to make 2 board
  • FIG. 2 is a cross-sectional view taken along line AA in FIG. It is a top view which shows the structure of the 1st board
  • FIG. 4 is an enlarged view showing a configuration of a photoelectric conversion element, a thin film transistor, and the like formed in a small region on the first substrate in FIG. 3. It is a figure explaining the 1st board
  • each member in the radiation image detector 1 and the radiation detection panel 3 particularly the vertical relationship, in the housing 2 of the radiation image detector 1. Description will be made based on the positional relationship when the surface X side on which the radiation is incident is directed upward and the surface Y side opposite to the surface X on which the radiation is incident in the housing 2 is directed downward.
  • FIG. 1 is an external perspective view of the radiation image detector 1 according to the present embodiment
  • FIG. 2 is a cross-sectional view taken along the line AA in FIG.
  • the radiation image detector 1 includes a radiation detection panel 3 housed in a housing 2.
  • the housing 2 is formed of a material such as a carbon plate or plastic. 1 and 2 show a case where the housing 2 is a so-called lunch box type formed by a frame plate 51 and a back plate 52, but the housing 2 is formed in a rectangular tube shape. The so-called monocoque type can also be used.
  • an indicator 53 made of LEDs or the like, a lid 54, a terminal 55 connected to an external device, a power switch 56, and the like are disposed on the side surface of the housing 2.
  • a first substrate 4 (hereinafter referred to as “element substrate 4”), a second substrate 5 (hereinafter referred to as “scintillator substrate 5”), a scintillator 6 and the like.
  • the radiation detection panel 3 provided with is arranged.
  • a base 7 is arranged below the radiation detection panel 3 via a lead thin plate (not shown), and the base 7 has various types such as a CPU (Central Processing Unit) and a RAM (Random Access Memory).
  • a PCB substrate 9 on which electronic components 8 and the like are disposed, a buffer member 10 and the like are attached.
  • the element substrate 4 is composed of a light-transmissive glass substrate that transmits light such as radiation and ultraviolet rays.
  • the thickness of the element substrate 4 is set to about 0.6 mm.
  • the element substrate 4 is not limited to a glass substrate, For example, you may be comprised with the light transmissive plastic substrate. Further, the thickness of the element substrate 4 is not limited to 0.6 mm.
  • FIG. 3 is a plan view showing the configuration of the surface of the element substrate 4.
  • a plurality of scanning lines 11 and a plurality of signal lines 12 are arranged so as to cross each other.
  • a plurality of bias lines 13 are arranged in parallel with the plurality of signal lines 12.
  • each bias line 13 is connected to one end 14 on the element substrate 4 by a single connection 14. They are united.
  • photoelectric conversion elements 15 are respectively provided in the small regions R partitioned by the plurality of scanning lines 11 and the plurality of signal lines 12 on the surface 4a of the element substrate 4.
  • the element substrate (first substrate) 4 is formed by arranging a plurality of photoelectric conversion elements 15 in a two-dimensional manner on the surface 4a.
  • the photoelectric conversion elements 15 are connected to the bias lines 13 respectively.
  • a bias voltage is applied to the photoelectric conversion elements 15 from a bias power source (not shown) via the bias lines 13. .
  • the photoelectric conversion element 15 is charged with light energy by absorbing light energy and generating electron-hole pairs inside when irradiated with light output from the scintillator 6 that has been irradiated with radiation.
  • a photodiode is used to convert to.
  • each small region R is provided with one thin film transistor (hereinafter referred to as “TFT”) 16 for each photoelectric conversion element 15, and the source of the TFT 16.
  • TFT thin film transistor
  • the electrode 16s is connected to one electrode of the photoelectric conversion element 15, the drain electrode 16d is connected to the signal line 12, and the gate electrode 16g is connected to the scanning line 11.
  • the ends of the scanning lines 11, the signal lines 12, and the connection lines 14 are input / output, respectively. It is connected to a terminal (also referred to as a pad) 18.
  • a terminal also referred to as a pad
  • the scanning line 11, the signal line 12, the connection line 14, the photoelectric conversion element 15 and the like are provided with an insulating layer for protecting them from corrosion and damage, that is, a passivation layer 17 made of silicon nitride (SiNx) or the like. It is covered with.
  • each input / output terminal 18 has a COF (Chip On Film) 19 such as an anisotropic conductive adhesive film (Anisotropic Conductive Film) or an anisotropic conductive paste (Anisotropic Conductive Paste). Crimping is performed via the isotropic conductive adhesive material 20.
  • the COF 19 is routed to the back surface 4b side of the element substrate 4, and the PCB substrate 9 and the COF 19 are pressure-bonded and connected to the back surface 4b side.
  • the surface unevenness of the plurality of photoelectric conversion elements 15 etc. is flattened on the portion of the surface 4a of the element substrate 4 where the plurality of photoelectric conversion elements 15 etc. are formed.
  • a transparent resin or the like is provided so as to cover the plurality of photoelectric conversion elements 15 or the like via the passivation layer 17.
  • the planarizing layer 21 is formed by coating.
  • the planarization layer 21 is formed of a transparent acrylic photosensitive resin that transmits light output from the phosphor 6a of the scintillator 6.
  • FIG. 5 illustration of the electronic component 8 and the like in addition to the scintillator 6 is omitted.
  • the scintillator 6 converts incident radiation into light having a different wavelength, and includes a phosphor as a main component.
  • a phosphor as a main component.
  • the scintillator 6 when radiation such as X-rays is incident, an electromagnetic wave having a wavelength of 300 nm to 800 nm, that is, one that outputs light ranging from ultraviolet light to infrared light centering on visible light. It is used.
  • the phosphor for example, a material in which a luminescent center substance is activated in a base material such as CsI: Tl is preferably used.
  • the scintillator 6 is formed on a support film 6 b formed of various polymer materials such as a cellulose acetate film, a polyester film, and a polyethylene terephthalate film.
  • the phosphor 6a is grown by a phase growth method, and is made of a columnar crystal of the phosphor 6a.
  • a vapor deposition method, a sputtering method, or the like is preferably used as the vapor growth method.
  • the phosphor 6a can be vapor-phase grown as an independent elongated columnar crystal on the support film 6b.
  • Each columnar crystal of the phosphor 6a is thick in the vicinity of the support film 6b, and becomes thinner toward the tip (lower end in FIG. 6) Pa, and the tip Pa has an acute-angled substantially conical shape. Grown and formed.
  • the scintillator 6 in which the phosphor 6a is formed as a columnar crystal in this way has the acute-angled tip Pa of the columnar crystal of the phosphor 6a on the lower side, that is, the plurality of photoelectric conversions of the element substrate 4 described above.
  • the support film 6 b is attached to the lower surface 5 a of the scintillator substrate (second substrate) 5 so as to face the element 15 side. In this way, the scintillator 6 is supported by the scintillator substrate 5.
  • the scintillator 6 may be formed in a state where the entire columnar crystal of the phosphor 6a is covered with a film or the like. In this case, the thickness of the film is uniform, and the phosphor 6a is described later.
  • the tip Pa of the phosphor contacts the surface of the planarizing layer 21
  • the tip Pa of the phosphor 6a contacts the surface of the planarizing layer 21 through the film.
  • the scintillator substrate (second substrate) 5 is laminated on one surface of a plastic substrate 501 and a plastic substrate 501 as shown in FIG.
  • the thickness of the scintillator substrate 5 is set to be equal to or less than that of the element substrate 4, and the thicknesses of the inorganic thin films 502 and 503 are each set to about 1 ⁇ m.
  • a transparent resin substrate such as PET (polyethylene terephthalate), acrylic, nylon, or polycarbonate is preferably used.
  • a transparent silicon compound thin film made of SiN or SiO As the inorganic thin films 502 and 503, a transparent silicon compound thin film made of SiN or SiO, a transparent metal oxide thin film made of indium oxide, zinc oxide, tin oxide, or the like, or a transparent thin film made of a combination thereof. Is preferably used. That is, the scintillator substrate 5 can be formed by laminating transparent inorganic thin films 502 and 503 on both surfaces of a transparent plastic substrate 501.
  • the plastic substrate 501 is not limited to a transparent substrate as long as it can transmit at least radiation and light having a wavelength for curing an adhesive 22 (described later) that is a photo-curable adhesive. That is, for example, when the adhesive 22 is an ultraviolet curable adhesive, the plastic substrate 501 may be any substrate that can transmit at least radiation and ultraviolet rays. In addition, the plastic substrate 501 may be a flexible film-like substrate or a rigid plate-like substrate.
  • the inorganic thin films 502 and 503 are limited to transparent thin films as long as they can transmit at least radiation and light having a wavelength for curing the adhesive 22 (described later) that is a photo-curing adhesive. is not. That is, for example, when the adhesive 22 is an ultraviolet curable adhesive, the inorganic thin films 502 and 503 may be thin films that can transmit at least radiation and ultraviolet rays. Note that the inorganic thin films 502 and 503 may have electrical conductivity or may not have electrical conductivity.
  • the scintillator substrate 5 has at least the front surface 5a formed of the inorganic thin film 502
  • the plastic substrate 501 may be exposed without forming the back surface 5b of the inorganic thin film 503.
  • the inorganic thin film 503 can be appropriately installed according to the balance of stress applied to the plastic substrate 501 such as strain stress generated in the manufacturing process of the radiation detection panel 3.
  • the inorganic thin film 502 is laminated only on one surface of the plastic substrate 501, that is, on the surface of the plastic substrate 501 on the scintillator 6 side (front surface 5a side) If there is no inconvenience such as warping of the scintillator substrate 5 due to the strain stress generated in the manufacturing process of the detection panel 3, the other surface of the plastic substrate 501, that is, the scintillator 6 in the plastic substrate 501 is used.
  • the inorganic thin film 503 may not be laminated on the surface opposite to the side (the back surface 5b side).
  • the thickness of the scintillator substrate 5 is not limited to the same as or less than that of the element substrate 4 as long as the scintillator substrate 5 is lighter than the element substrate 4. Further, the thickness of the inorganic thin film 502 is not limited to 1 ⁇ m as long as the inorganic thin film 502 can block the inflow of moisture (water vapor) into the internal space C described later. The thickness of the inorganic thin film 503 is not limited to 1 ⁇ m as long as the inorganic thin film 503 can balance the stress applied to the plastic substrate 501.
  • FIG. 7 is an enlarged view of an end portion of the radiation detection panel 3 in FIG.
  • the relative size and thickness of each member of the radiation detection panel 3, the interval between the members, and the like do not necessarily reflect the actual structure of the radiation detection panel 3.
  • the radiation detection panel 3 is configured such that the scintillator substrate 5 is disposed such that the acute-angled tip Pa of the phosphor 6 a of the scintillator 6 faces the plurality of photoelectric conversion elements 15 and the planarization layer 21. Is formed.
  • an adhesive 22 is disposed over the entire periphery of the gap between the element substrate 4 and the scintillator substrate 5 and around the scintillator 6 and the plurality of photoelectric conversion elements 15.
  • the substrate 5 is bonded with an adhesive 22.
  • an internal space C partitioned from the outside is formed by a portion between the element substrate 4 and the scintillator substrate 5 and the adhesive 22.
  • the adhesive 22 is a photo-curing adhesive that cures when irradiated with light, and an adhesive that uses a photo-curing epoxy resin from the viewpoint of forming a highly moisture-proof seal.
  • an adhesive using a photocurable acrylic resin is preferably used.
  • the photocurable adhesive for example, an ultraviolet curable resin containing a photoinitiator, a photopolymerizable compound, or the like can be used. In the following, a case where an ultraviolet curable adhesive which is a kind of a photocurable adhesive is used as the adhesive 22 will be described, but the present embodiment is not limited to this.
  • a plurality of rod-shaped spacers S (Sa) having a circular cross section as shown in FIG. 8A and spherical spacers S (Sb) as shown in FIG. 8B are installed in the adhesive 22. Yes.
  • the acute-angled tip Pa of the phosphor 6a of the scintillator 6 is separated from the flattening layer 21 at a portion close to the adhesive 22, and the scintillator 6 and the photoelectric conversion element 15 are separated. And the distance will be longer.
  • the tip Pa of the phosphor 6 a comes into contact with the surface of the planarization layer 21 due to the atmospheric pressure, so that the distance between the scintillator 6 and the photoelectric conversion element 15 becomes short. Therefore, the distance between the acute-angled tip Pa of the phosphor 6a of the scintillator 6 and the photoelectric conversion element 15 is not uniform throughout the radiation detection panel 3, and the sharpness of the obtained radiographic image is impaired.
  • the spacer S for example, as shown in FIG. 9, the spacer S has a diameter arranged such that the sharp tip Pa of the phosphor 6 a of the scintillator 6 is in contact with the surface of the planarization layer 21. It is preferable to use a spacer that is substantially the same as the distance between the element substrate 4 and the scintillator substrate 5.
  • the spacer S is formed of an inorganic material such as a metal (including an alloy), ceramic, or glass.
  • the spacers S are not limited to those formed of an inorganic material, and may be spacers formed of an organic material such as a resin (plastic) spacer, or an organic material.
  • the surface of the spacer formed of the material may be provided with a coating layer formed of an inorganic material, or the surface of the spacer formed of an inorganic material may be coated with an organic material. May be provided.
  • the plurality of spacers S are disposed at substantially the same interval in the extending direction of the adhesive 22 disposed between the element substrate 4 and the scintillator substrate 5. .
  • the spacing between the spacers S is such that when the element substrate 4 and the scintillator substrate 5 are bonded together under reduced pressure, as will be described later, even if an external force is applied to the element substrate 4 or the scintillator substrate 5, no cracks or cracks are generated.
  • the distance is set appropriately according to the material of the element substrate 4 and the scintillator substrate 5 and the material of the spacer S itself.
  • the plurality of spacers S accurately disperse the external force applied to the element substrate 4 and the scintillator substrate 5. Therefore, it is possible to accurately prevent the element substrate 4 and the scintillator substrate 5 from being cracked or cracked. In addition, since the element substrate 4 and the scintillator substrate 5 are accurately prevented from being cracked or cracked as described above, the cracks and the like are generated, and the photoelectric conversion element 15 and the phosphor 6a of the scintillator 6 in the vicinity thereof are damaged.
  • the phosphor 6a of the scintillator 6 has a columnar crystal structure as described above is described.
  • the phosphor 6a of the scintillator 6 does not necessarily have a columnar crystal structure.
  • the present invention can be similarly applied to the case where a scintillator 6 * in which the phosphors 6a are formed in layers is used.
  • the scintillator 6 * is formed in layers by applying a phosphor 6a made of, for example, GOS (Gd 2 O 2 S: Tb) to the scintillator substrate 5. Then, the scintillator substrate 5 is placed on the element substrate 4 so that the scintillator 6 * faces the photoelectric conversion element 15, and the element substrate 4 and the scintillator substrate 5 are bonded by the adhesive 22. And the internal space C is pressure-reduced and sealed.
  • a phosphor 6a made of, for example, GOS (Gd 2 O 2 S: Tb)
  • tip (end surface) Pb by the side of the photoelectric conversion element 15 of the fluorescent substance 6a of the scintillator 6 * will become the planarization layer inside the internal space C by atmospheric pressure similarly to the case of said embodiment. 21 comes into contact with the entire surface. Therefore, the distance between the tip Pb of the phosphor 6a and the photoelectric conversion element 15 can be made uniform over the entire area of the radiation detection panel 3, and in all the photoelectric conversion elements 15 on the element substrate 4 of the radiation detection panel 3. The sharpness is uniform, and it is possible to detect a radiographic image with uniform sharpness in the entire image.
  • a plastic substrate 501 having a specific gravity smaller and lighter than that of a glass substrate is used as the scintillator substrate 5.
  • the plastic substrate 501 made of an organic material is inferior in moisture resistance to the glass substrate made of an inorganic material, and therefore moisture (water vapor) is externally introduced into the internal space C. It becomes easy to flow in, and inconveniences such as the scintillator 6 being easily deteriorated occur.
  • the inorganic thin film 502 may block the inflow of moisture (water vapor) into the internal space C. it can.
  • an adhesive an adhesive that can bond together inorganic materials with sufficient adhesiveness, and an adhesive that can bond organic materials with sufficient adhesiveness are known. There is no known adhesive capable of bonding an inorganic material and an organic material with adhesiveness.
  • the adhesive is coated with the glass surface of the element substrate surface (or the element substrate surface is covered with a passivation layer made of SiNx or the like as in the present embodiment). Since the passivation layer is bonded to the glass surface of the scintillator substrate, that is, the inorganic materials are bonded to each other, the element substrate and the scintillator substrate can be bonded to each other with sufficient adhesiveness.
  • the plastic substrate 501 is simply used as the scintillator substrate, the glass surface of the element substrate surface (or the passivation layer made of SiNx) and the plastic surface of the scintillator substrate surface are bonded with an adhesive, that is, an inorganic material and an organic material. Will be bonded.
  • an adhesive that is, an inorganic material and an organic material.
  • the adhesion is inferior to the adhesion between inorganic substances, the element substrate and the scintillator substrate cannot be bonded together with sufficient adhesion, and a gap is formed between the element substrate and the scintillator substrate. There is a fear. In this case, the outside air containing moisture (water vapor) flows into the internal space C from the outside and the scintillator 6 is likely to deteriorate.
  • the surface 5a of the scintillator substrate 5 is formed of the inorganic thin film 502
  • the adhesion between the element substrate 4 and the scintillator substrate 5 is caused by the passivation layer 17 on the element substrate surface and the scintillator substrate surface.
  • the element substrate 4 and the scintillator substrate 5 can be bonded to each other with sufficient adhesiveness.
  • the scintillator substrate is a graphite substrate having a thin film of aluminum, titanium, nickel, copper, etc. formed on the surface as described above. If a substrate that cannot transmit light is used, the adhesive 22 cannot be cured. Therefore, when a substrate that cannot transmit light is used as the scintillator substrate, there arises a disadvantage that the adhesive 22, that is, a photocurable adhesive cannot be used for bonding the element substrate and the scintillator substrate.
  • the scintillator substrate 5 includes the light-transmitting plastic substrate 501 and the light-transmitting inorganic thin films 502 and 503, the light having a wavelength for curing the adhesive 22 is transmitted. can do.
  • the thin glass substrate is fragile, so that the scintillator substrate is cracked or cracked by a load applied to the element substrate and the scintillator substrate. Such inconveniences occur.
  • the scintillator substrate 5 is made of the plastic substrate 501 that is less brittle and less fragile than the glass substrate, it can withstand the load when the element substrate and the scintillator substrate are bonded together.
  • the adhesive 22 is a photo-curing adhesive
  • the scintillator substrate (second substrate) 5 is: A light-transmitting plastic substrate 501 and a light-transmitting inorganic thin film 502 which is laminated on one surface of the plastic substrate 501 and forms the surface 5a of the scintillator substrate 5 are configured. That is, since the plastic substrate 501 having a specific gravity smaller and lighter than that of the glass substrate is used as the scintillator substrate 5, radiation detection is performed as compared with the case where the element substrate and the scintillator substrate are formed of the same thickness glass substrate.
  • the panel 3 can be reduced in weight.
  • the radiation detection panel 3 can be reduced in weight as described above, the radiation image detector 1 can be easily carried especially when the radiation image detector 1 is configured to be portable. It becomes possible. Further, since the weight of the radiation detection panel 3 can be reduced as described above, the drop strength of the radiation image detector 1 can be improved.
  • the scintillator substrate 5 in this embodiment has the surface 5a of the scintillator substrate 5 formed of an inorganic thin film 502. Since the structure can block the inflow of moisture (water vapor) into the space C, it is possible to prevent the occurrence of inconvenience such as the scintillator 6 being easily deteriorated.
  • the surface 5a of the scintillator substrate 5 is formed of the inorganic thin film 502, and the adhesive 22 Since the passivation layer 17 forming the surface 4a of the substrate 4 and the inorganic thin film 502 forming the surface 5a of the scintillator substrate 5 are bonded, that is, the inorganic substances are bonded to each other, both the element substrate and the scintillator substrate are glass substrates.
  • the element substrate 4 and the scintillator substrate 5 can be bonded together with sufficient adhesiveness equivalent to that in the case of the above.
  • the adhesive 22 is a photocurable adhesive as in the present embodiment
  • the adhesive 22 cannot be cured if a substrate that cannot transmit light is used.
  • the plastic substrate 501 and the inorganic thin films 502 and 503 included in the scintillator substrate 5 are both light transmissive, and can transmit light having a wavelength that cures the adhesive 22. Due to this configuration, it is possible to prevent the occurrence of inconveniences such as the inability to use a photo-curing adhesive for bonding the element substrate and the scintillator substrate.
  • the scintillator substrate 5 in the present embodiment is configured by a plastic substrate 501 that is less brittle and less fragile than a glass substrate, and can withstand a load when the element substrate and the scintillator substrate are bonded together. Therefore, it is possible to prevent the occurrence of inconvenience such as a crack or a crack in the scintillator substrate 5 due to a load when the element substrate and the scintillator substrate are bonded together.
  • the scintillator substrate (second substrate) 5 is further laminated on the other surface of the plastic substrate 501, and the light-transmitting inorganic thin film 503 that forms the back surface 5b of the scintillator substrate 5 is provided. It is prepared for. Therefore, since the inorganic thin films 502 and 503 are provided on both surfaces of the plastic substrate 501, the generation occurs in the manufacturing process as compared with the case where the inorganic thin film 502 is provided only on one surface of the plastic substrate 501. Since the balance of the stress applied to the plastic substrate 501 such as strain stress is made uniform, the occurrence of inconvenience such as the scintillator substrate 5 warping due to the strain stress generated in the manufacturing process of the radiation detection panel 3 is prevented. It becomes possible.
  • the manufacturing method of the radiation detection panel 3 and the radiation image detector 1 using the scintillator 6 in which the phosphor 6a has a columnar crystal structure will be described.
  • the scintillator 6 * in which the phosphor 6a is formed in a layer shape is described.
  • the used radiation detection panel 3 and radiation image detector are also described in the same manner, and the present invention is applied.
  • the adhesive 22 including a plurality of spacers S is disposed on the periphery of the plurality of photoelectric conversion elements 15 on the element substrate 4 or on the periphery of the scintillator 6 of the scintillator substrate 5 (adhesive placement step: step). S1).
  • a plurality of spacers S are provided at substantially the same interval in the extending direction of the adhesive 22 in the peripheral portion of the plurality of photoelectric conversion elements 15 of the element substrate 4 or the peripheral portion of the scintillator 6 of the scintillator substrate 5.
  • Various methods can be adopted as a method of arranging the adhesive 22 in a state of being arranged in the above.
  • a plurality of spacers S are put in the adhesive 22 in advance and stirred, and the adhesive 22 including the plurality of spacers S is used as a part around the plurality of photoelectric conversion elements 15 on the element substrate 4 or using a syringe or the like.
  • the method Can be adopted.
  • the adhesive 22 not including the spacer S is applied and disposed on the periphery of the plurality of photoelectric conversion elements 15 on the element substrate 4 or on the periphery of the scintillator 6 of the scintillator substrate 5.
  • a method in which a plurality of spacers S are arranged at substantially the same interval in the extending direction of the adhesive 22 with respect to the adhesive 22 arranged on the element substrate 4 can also be adopted.
  • step S1 the adhesive 22 is arranged around the plurality of photoelectric conversion elements 15 of the element substrate 4
  • step S1 the adhesive is used in each step after the adhesive arranging step.
  • the adhesive is used in each step after the adhesive arranging step (step S1).
  • step S1 the adhesive is used in each step after the adhesive arranging step.
  • 22 is arranged around the scintillator 6 of the scintillator substrate 5.
  • step S2 the element substrate 4 and the scintillator substrate 5 are temporarily bonded through the adhesive 22 in a state where the scintillator 6 and the plurality of photoelectric conversion elements 15 face each other.
  • the temporary bonding means that the scintillator substrate 5 is placed on the element substrate 4 before the element substrate 4 and the scintillator substrate 5 are bonded in a full-scale in the decompression bonding step (step S4) described later.
  • the element substrate 4 is placed on the scintillator substrate 5 and the element substrate 4 and the scintillator substrate 5 are temporarily bonded by the adhesive 22.
  • step S4 the radiation detection panel 3 temporarily bonded in this way is subjected to processes such as a reduced pressure bonding process.
  • these processes are performed as shown in FIG. This is done in the chamber 30.
  • the apparatus for performing the processing such as the decompression bonding step (step S4) is not limited to the chamber 30 illustrated in FIG.
  • the chamber 30 includes a base 31, a film 32, and a lid member 33 that can be attached to and detached from the base 31. Then, O-ring-shaped sealing members 34 a and 34 b are respectively disposed on the side surfaces of the base 31 and the lid member 33, and when the lid member 33 is attached to the base 31, the base The film 32 is sealed in a sealed manner so that the film 32 is sandwiched from above and below by the seal member 34 a of 31 and the seal member 34 b of the lid member 33.
  • the bottom of the base 31 is formed in a flat shape, and a decompression pump 35 is attached through an opening (not shown).
  • the film 32 is made of a material that transmits ultraviolet rays and has elasticity.
  • the ultraviolet irradiation device 36 is attached to the inside of the lid member 33, and further, a pump 37 is attached via an opening (not shown).
  • the lid member 33 can be simply provided with an opening.
  • step S2 the temporarily bonded radiation detection panel 3 is placed on the base 31 of the chamber 30 as shown in FIG. And the film 32 is mounted so that the scintillator board
  • the lid member 33 is attached to the base 31 from above the film 32 so that the film 32 is sandwiched from above and below by the seal member 34b.
  • the scintillator substrate 5 in order to remove moisture (water vapor) in the internal space C partitioned from the outside by the element substrate 4, the scintillator substrate 5, and the adhesive 22, air in the chamber 30, or at least radiation.
  • You may comprise so that the air in the space (henceforth "lower space R1") below the film 32 containing the detection panel 3 may be substituted with dry air or an inert gas.
  • the decompression pump 35 is driven to depressurize the lower space R1 of the film 32 including the radiation detection panel 3, thereby reducing the internal space C of the radiation detection panel 3 to a pressure lower than atmospheric pressure (for example, from 0.2 atmosphere to The pressure is gradually reduced to 0.5 atm).
  • a space between the lid member 33 of the chamber 30 and the film 32 (hereinafter referred to as “upper space R2”, see FIG. 12) has a higher pressure than the lower space R1, and therefore when the lower space R1 of the chamber 30 is reduced in pressure.
  • the film 32 comes to stick from above the scintillator substrate 5 of the radiation detection panel 3, and the radiation detection panel 3 is pressed by the pressure from the upper space R ⁇ b> 2 above through the film 32.
  • the element substrate 4 and the scintillator substrate 5 are bonded together (decompression bonding process: step S4).
  • the scintillator substrate 5 is formed of the plastic substrate 501 that is less brittle and less fragile than the glass substrate even when the reduced pressure bonding step (step S4) is performed, and when the element substrate and the scintillator substrate are bonded under reduced pressure. Therefore, the scintillator substrate 5 does not suffer from inconveniences such as cracks and cracks.
  • step S2 when the element substrate 4 and the scintillator substrate 5 come into close contact with the adhesive 22 at the end of the temporary bonding step (step S2), the internal space C is sealed with the internal pressure being atmospheric pressure.
  • the internal pressure being atmospheric pressure.
  • the gas in the internal space C breaks the seal by the adhesive 22.
  • the liquid is ejected to the outside, and the seal by the adhesive 22 is broken, resulting in poor adhesion.
  • the adhesive 22 is bonded to the peripheral portions of the plurality of photoelectric conversion elements 15 on the element substrate 4 as shown in FIG.
  • the agent 22 is applied and arranged so that a gap G is formed in the extending direction of the agent 22.
  • the adhesive 22 is disposed on the scintillator substrate 5 around the scintillator 6.
  • the illustration of the spacer S is omitted.
  • the gap G can be formed not only at one place but also at a plurality of places.
  • step S2 When the gap G is formed in this way, when the element substrate 4 and the scintillator substrate 5 are temporarily bonded in the temporary bonding step (step S2), as shown in FIG.
  • the opening 24 that communicates the internal space C with the space outside thereof is formed.
  • step S4 when the pressure in the lower space R1 is gradually reduced in the reduced pressure bonding step (step S4) using the chamber 30 or the like, the gas inside the inner space C is discharged through the opening 24 of the adhesive 22, and the inner space. The pressure inside C is reduced.
  • the size of the opening 24, that is, the gap G of the adhesive 22 is formed to an appropriate size, as shown in FIG. 16, it can be pressed by the atmospheric pressure from the upper space R2.
  • the adhesive 22 is spread in the extending direction, and the adhesives 22 are joined together to seal the opening 24, C can be sealed.
  • step S4 when the lower space R1 is decompressed, the gas inside the internal space C is discharged through the opening 24 and the internal space C is decompressed.
  • the scintillator substrate 5 gradually moves to the element substrate 4 side due to the pressing by the pressure from the upper space R2 through the film 32, and the tip Pa of the phosphor 6a of the scintillator 6 and the planarization layer 21 of the element substrate 4 are It contacts the state shown in FIG.
  • the opening 24 is sealed, and the element substrate 4 and the scintillator substrate 5 are bonded via the adhesive 22 in a state where the adhesive 22 and the element substrate 4 or the scintillator substrate 5 are in close contact with each other.
  • the internal space C is sealed in a state where the pressure is reduced to a predetermined pressure (for example, 0.2 atmospheric pressure to 0.5 atmospheric pressure).
  • the pump 37 on the lid member 33 side of the chamber 30 is driven to moderately pressurize or depressurize the upper space R2 of the chamber 30, and the element substrate 4 and the scintillator substrate 5 of the radiation detection panel 3 Can be configured to be securely bonded together, and pressure adjustment in the upper space R2 of the chamber 30 is appropriately performed.
  • the lid member 33 of the chamber 30 is provided with a simple opening instead of providing the pump 37, the internal pressure of the upper space R2 of the chamber 30 is maintained at the atmospheric pressure, which is higher than that of the lower space R1. Since the pressure is high, the element substrate 4 and the scintillator substrate 5 can be securely bonded together by appropriately pressing the radiation detection panel 3.
  • the bonded radiation detection panel 3 is irradiated with ultraviolet rays from an ultraviolet irradiation device 36 (see FIG. 13) provided on the lid member 33 of the chamber 30.
  • the radiation detection panel 3 is manufactured by curing the adhesive 22 and securely bonding the element substrate 4 and the scintillator substrate 5 (adhesive curing step: step S5).
  • step S5 Even if the adhesive curing step (step S5) is performed in this manner and the ultraviolet light, that is, the light having a wavelength for curing the adhesive 22 is irradiated from the scintillator substrate 5, the scintillator substrate 5 is separated from the light-transmitting plastic substrate 501. Since it is composed of the light-transmitting inorganic thin films 502 and 503 and can transmit ultraviolet rays, there is no inconvenience that the adhesive 22 cannot be cured.
  • the scintillator substrate 5 and the film 32 are formed of a material that transmits ultraviolet rays, the ultraviolet rays irradiated from the ultraviolet irradiation device 36 reach the adhesive 22, and the adhesive 22 is surely secured. Harden. However, when the ultraviolet rays that have passed through the film 32 and the scintillator substrate 5 reach the scintillator 6, the photoelectric conversion element 15, and the like, they may adversely affect them.
  • a light blocking layer that blocks light (ultraviolet rays) between the scintillator substrate 5 and the scintillator 6.
  • the light shielding layer is provided not between the scintillator substrate 5 and the scintillator 6, but between the scintillator substrate 5 and the scintillator 6, and on the surface of the scintillator substrate 5 opposite to the surface on which the scintillator 6 is provided. It is also possible to form.
  • the light shielding layer shields ultraviolet rays but needs to transmit radiation.
  • the manufactured radiation detection panel 3 is manufactured. Even if it is moved to atmospheric pressure, the outside air does not flow into the internal space C, and the decompressed state of the internal space C is maintained.
  • the element substrate 4 and the scintillator substrate 5 are constantly pressed in the thickness direction at atmospheric pressure. Therefore, as shown in FIG. 9, the radiation detection panel 3 is formed on the element substrate 4 with the acute-angled tip Pa of the phosphor 6 a of the scintillator 6 and the tip Pb of the layered phosphor 6 a of the scintillator 6 *.
  • the plurality of photoelectric conversion elements 15 and the planarizing layer 21 covering the photoelectric conversion elements 15 via the passivation layer 17 can be maintained in contact with each other.
  • the tip Pa, the phosphor Pa of the phosphor 6a without damage to the scintillators 6, 6 * .
  • the distance between Pb and the photoelectric conversion element 15 can be made uniform over the entire area of the radiation detection panel 3, and the radiation detection panel 3 having an effective function as described above can be manufactured.
  • the surface 5a of the scintillator substrate 5 is formed of the inorganic thin film 502. Therefore, moisture (into the internal space C) ( Can prevent the inflow of water vapor).
  • the surface 5 a of the scintillator substrate 5 is formed of an inorganic thin film 502, and the passivation layer 17 that forms the surface 4 a of the element substrate 4 and the inorganic thin film that forms the surface 5 a of the scintillator substrate 5 with the adhesive 22.
  • the element substrate 4 and the scintillator substrate 5 can be bonded to each other with sufficient adhesiveness.
  • step S10 when the manufacturing process of the radiation detection panel 3 (step S10) is completed as described above, the anisotropic input / output terminal 18 formed on the element substrate 4 bonded to the scintillator substrate 5 is then subjected to anisotropic conduction.
  • the COF 19 is pressure-bonded by attaching an adhesive film or applying an anisotropic conductive paste (COF pressure-bonding step: step S11), and further, the current-carrying between the input / output terminal 18 and the COF 19 is checked (COF current-carrying inspection).
  • Step S12 Process: Step S12).
  • the COF 19 is routed to the back surface 4b side of the element substrate 4, and the PCB substrate 9 and the COF 19 are crimped and connected (PCB substrate crimping step: step S13), and the exposed portion of the metal member in the element substrate 4 or the like
  • PCB substrate crimping step: step S13 PCB substrate crimping step
  • the exposed portion of the metal member in the element substrate 4 or the like For example, silicon rubber or resin is applied to a portion that may be corroded to prevent corrosion (corrosion prevention step: step S14).
  • a module is formed (module forming step: step S15), and then the module The converted radiation detection panel 3 is stored in the housing 2 (module storage step: step S16), and the radiation image detector 1 is manufactured.
  • the radiation detection panel 3, the radiation image detector 1, the manufacturing method of the radiation detection panel 3, and the manufacturing method of the radiation image detector 1 according to the second embodiment will be described.
  • the configurations of the adhesive 22 and the scintillator substrate 5A are different from those of the first embodiment. Therefore, only different parts will be described, and other common parts will be denoted by the same reference numerals and description thereof will be omitted.
  • the radiation detection panel 3 and the radiation image detector 1 using the scintillator 6 in which the phosphor 6a has a columnar crystal structure will be described.
  • the detection panel 3 and the radiation image detector 1 are also described in the same manner, and the present invention is applied.
  • the adhesive 22 is a thermosetting adhesive that is cured by heating or a photocurable adhesive that is cured when irradiated with light, and can form a highly moisture-proof seal.
  • an adhesive using an epoxy resin and an adhesive using an acrylic resin are preferably used.
  • the thermosetting adhesive for example, an adhesive using a thermosetting resin or an adhesive to which a curing accelerator or the like is added can be used.
  • the photocurable adhesive for example, an ultraviolet curable resin containing a photoinitiator, a photopolymerizable compound, or the like can be used. In the following, a case where an ultraviolet curable adhesive which is a kind of a photocurable adhesive is used as the adhesive 22 will be described, but the present embodiment is not limited to this.
  • the scintillator substrate (second substrate) 5A is made of, for example, a glass whose scintillator 6 is formed on one surface and is thinner than the element substrate (first substrate) 4 as shown in FIG.
  • the substrate 504 includes a plastic substrate 505 bonded to the other surface of the glass substrate 504, and an adhesive layer 506 that bonds the glass substrate 504 and the plastic substrate 505.
  • a transparent glass substrate having a thickness of half or less of the element substrate 4, that is, a thickness of 0.3 mm or less is preferably used.
  • the thickness of the glass substrate 504 is not limited to 0.3 mm or less as long as it is thinner than the element substrate 4 and the scintillator substrate 5A is lighter than the element substrate 4.
  • the glass substrate 504 is not limited to a transparent substrate as long as it can transmit at least radiation and light having a wavelength that cures the adhesive 22 that is a photocurable adhesive.
  • the glass substrate 504 should just be able to permeate
  • a transparent resin substrate such as PET, acrylic, nylon, or polycarbonate is preferably used.
  • the plastic substrate 505 may be a flexible film substrate or a rigid plate substrate.
  • the thickness of the plastic substrate 505 can prevent the scintillator substrate 5A from being cracked or cracked by the load when the element substrate 4 and the scintillator substrate 5A are bonded together, and the scintillator substrate 5A is more than the element substrate 4. If it is lightweight, it will not specifically limit.
  • the plastic substrate 505 is not limited to a transparent substrate as long as it can transmit at least radiation and light having a wavelength that cures the adhesive 22 that is a photocurable adhesive. Further, the plastic substrate 505 only needs to be able to transmit at least radiation when the adhesive 22 is not a photocurable adhesive.
  • the adhesive layer 506 a transparent adhesive layer capable of bonding the glass substrate 504 and the plastic substrate 505 is preferably used.
  • the adhesive layer 506 is not limited to a transparent layer as long as it can transmit at least radiation and light having a wavelength that cures the adhesive 22 that is a photocurable adhesive. In the case where the adhesive layer 506 and the adhesive 22 are not photo-curing adhesives, it is sufficient that at least radiation can be transmitted.
  • the plastic substrate 505 attached to the glass substrate 504 is provided to make the scintillator substrate 5A a substrate that can withstand the load when the element substrate and the scintillator substrate are attached to each other. Therefore, after the element substrate 4 and the scintillator substrate 5A are bonded, the plastic substrate 505 may be peeled off from the glass substrate 504 together with the adhesive layer 506 as shown in FIG.
  • the adhesive layer 506 is a predetermined layer such as an adhesive layer made of an ultraviolet peelable adhesive whose adhesive strength decreases when irradiated with ultraviolet light, or an adhesive layer made of a heat peelable adhesive whose adhesive strength decreases when heated. If an adhesive layer whose adhesive strength decreases when conditions are applied is adopted, the plastic substrate 505 can be easily peeled from the glass substrate 504.
  • a thin glass substrate 504 that is thinner and lighter than the element substrate 4 is used as the scintillator substrate 5A.
  • the thin glass substrate 504 is easily broken, and therefore, the scintillator substrate is cracked or cracked by a load when the element substrate and the scintillator substrate are bonded together. Inconvenience will occur.
  • the scintillator substrate 5A since the plastic substrate 505 that is less brittle and less fragile than the glass substrate is attached to the glass substrate 504, the scintillator substrate 5A has a load when the element substrate and the scintillator substrate are attached to each other. Can withstand.
  • the scintillator substrate (second substrate) 5A has the scintillator 6 formed on one surface and the element substrate (first substrate). 1 substrate) 4, a glass substrate 504 thinner than 4, a plastic substrate 505 bonded to the other surface of the glass substrate 504, and an adhesive layer 506 that bonds the glass substrate 504 and the plastic substrate 505 to each other. ing. That is, since the thin glass substrate 504 that is thinner and lighter than the element substrate 4 is used as the scintillator substrate 5A, the radiation of the radiation is higher than that in the case where the element substrate and the scintillator substrate are formed of the same thickness glass substrate.
  • the detection panel 3 can be reduced in weight.
  • the radiation detection panel 3 can be reduced in weight as described above, the radiation image detector 1 can be easily carried especially when the radiation image detector 1 is configured to be portable. It becomes possible. Further, since the weight of the radiation detection panel 3 can be reduced as described above, the drop strength of the radiation image detector 1 can be improved.
  • the scintillator substrate 5 in this embodiment is formed by attaching a plastic substrate 505 that is less brittle and less fragile than the glass substrate to the glass substrate 504. Since it has a structure capable of withstanding the load when the scintillator substrate is bonded, it prevents the occurrence of inconvenience such as a crack or a crack entering the scintillator substrate 5A due to the load when the element substrate and the scintillator substrate are bonded. It becomes possible.
  • the scintillator substrate 5A has a glass substrate 504 on the scintillator substrate 5A side, which is formed of an inorganic material. Therefore, the scintillator 6 is easily deteriorated, and the front ends Pa and Pb of the phosphor 6a are easily deteriorated. It is possible to prevent the occurrence of inconveniences such as the distance from the photoelectric conversion element 15 not being uniform over the entire area of the radiation detection panel 3.
  • the scintillator substrate 5A is used.
  • the scintillator substrate (second substrate) 5A is further provided with an adhesive layer 506 that adheres the glass substrate 504 and the plastic substrate 505 in a peelable manner. Therefore, since the glass substrate 504 and the plastic substrate 505 can be peeled, the element substrate 4 and the scintillator substrate 5A are bonded together, and then the plastic substrate 505 is peeled from the glass substrate 504, whereby the scintillator substrate 5A is removed from the glass substrate. It can be composed only of 504.
  • the manufacturing method of the radiation detection panel 3 and the radiation image detector 1 using the scintillator 6 in which the phosphor 6a has a columnar crystal structure will be described.
  • the scintillator 6 * in which the phosphor 6a is formed in a layer shape is described.
  • the manufacturing method of the used radiation detection panel 3 and the radiation image detector 1 is also described in the same manner, and the present invention is applied.
  • the adhesive placement step (step S1) is performed.
  • the adhesive placement step (step S1) to the adhesive curing step (step S5) are performed according to the first embodiment shown in the flowchart of FIG. Since this is the same as the adhesive placement step (step S1) to the adhesive curing step (step S5) in the method for manufacturing the panel 3, detailed description thereof is omitted.
  • An adhesive 22 including a plurality of spacers S is disposed on the periphery of the plurality of photoelectric conversion elements 15 on the element substrate 4 or on the periphery of the scintillator 6 of the scintillator substrate 5A (adhesive placement step: step S1). And a temporary bonding step (step S2) for temporarily bonding the element substrate 4 and the scintillator substrate 5A through the adhesive 22 in a state where the plurality of photoelectric conversion elements 15 and the scintillator 6 face each other, and radiation detection.
  • a film placement step for placing the film 32 so as to cover the scintillator substrate 5 from the upper side of the scintillator substrate 5 of the panel 3, and an interior formed by the element substrate 4, the scintillator substrate 5A and the adhesive 22
  • a reduced pressure bonding step in which the space C is decompressed and the element substrate 4 and the scintillator substrate 5A are bonded together; Radiation in a state where the plastic substrate 505 is adhered to the glass substrate 504 by performing an adhesive curing step (step S5) for curing the adhesive 22 in a state where the element substrate 4 and the scintillator substrate 5A are adhered to each other.
  • the detection panel 3 (see FIG. 18) is manufactured.
  • the plastic substrate 505 is glass substrate 504 further.
  • the peeling process which peels from is performed.
  • the radiation detection panel 3 in a state where the plastic substrate 505 is peeled off from the glass substrate 504 together with the adhesive layer 506 can be manufactured.
  • step S6 if the adhesive layer 506 is an adhesive layer made of an ultraviolet peelable adhesive, the radiation detection panel 3 with the plastic substrate 505 attached to the glass substrate 504 (see FIG. 18). ), For example, by irradiating ultraviolet rays from the back surface 5b side of the scintillator substrate 5A, the adhesive force of the adhesive layer 506 is reduced, and the plastic substrate 505 is peeled from the glass substrate 504.
  • the adhesive layer 506 is an adhesive layer made of a heat-peelable adhesive, by heating the radiation detection panel 3 (see FIG. 18) in a state where the plastic substrate 505 is attached to the glass substrate 504, The adhesive strength of the adhesive layer 506 is reduced, and the plastic substrate 505 is peeled from the glass substrate 504.
  • the plastic substrate 505 is removed from the glass substrate 504 after the adhesive curing step (step S5). You may perform the peeling process (step S6) which peels. Therefore, the plastic substrate 505 can be peeled from the glass substrate 504 after the element substrate 4 and the scintillator substrate 5A are bonded together by performing the peeling step (step S6) after the adhesive curing step (step S5). Therefore, the scintillator substrate 5A included in the radiation detection panel 3 can be configured only from the glass substrate 504.
  • the radiation image detector (radiation image capturing apparatus) is a portable type (that is, a so-called cassette type) will be described.
  • the radiation image detector formed integrally with a support stand or the like This also applies to
  • FIG. 21 is an external perspective view of the radiation image detector according to the present embodiment
  • FIG. 22 is a cross-sectional view taken along the line BB of FIG.
  • the radiation image detector 1001 is configured by housing a scintillator 1003, a first substrate 1004, and the like in a housing 1002, as shown in FIGS.
  • the housing 1002 is formed of a material such as a carbon plate or plastic that transmits at least the radiation incident surface X.
  • 21 and 22 show a case where the casing 1002 is a so-called lunch box type formed by a frame plate 1002A and a back plate 1002B.
  • the casing 1002 is integrally formed in a rectangular tube shape. It is also possible to use a so-called monocoque type.
  • the side portion of the housing 1002 can be opened and closed for replacement of a power switch 1036, an indicator 1037 composed of an LED or the like, and a battery 1024 (see FIG. 26).
  • a lid member 1038 and the like are disposed.
  • an antenna device 1039 that is a communication unit for wirelessly communicating with an external device (not shown) is embedded in the side surface of the lid member 1038.
  • a base 1031 is disposed inside the housing 1002 below a first substrate 1004 (hereinafter referred to as the first substrate 1004) via a lead thin plate (not shown).
  • a PCB substrate 1033 on which electronic components 1032 and the like are disposed, a buffer member 1034 and the like are attached to the base 1031.
  • a second substrate 1035 (hereinafter referred to as a second substrate 1035) for protecting the first substrate 1004 and the radiation incident surface X of the scintillator 1003 is disposed.
  • the scintillator 1003 is formed on a support film 1003b formed of various polymer materials such as a cellulose acetate film, a polyester film, and a polyethylene terephthalate film.
  • the phosphor 1003a is grown by a phase growth method, and is made of a columnar crystal of the phosphor 1003a.
  • the scintillator 1003 converts incident radiation into light of another wavelength, and includes a phosphor as a main component. Specifically, in this embodiment, the scintillator 1003 outputs electromagnetic waves having a wavelength of 300 nm to 800 nm, that is, light ranging from ultraviolet light to infrared light centering on visible light when radiation such as X-rays is incident. Is being used.
  • the phosphor 1003a of the scintillator 1003 is formed of a material containing a halide, and in particular, a material in which a luminescent center substance is activated in a base material such as CsI: Tl is preferably used.
  • the phosphor 1003a is formed as long and narrow columnar crystals independent of each other on the support film 1003b.
  • Each columnar crystal of the phosphor 1003a is thick in the vicinity of the support film 1003b and has a tip (in FIG. 23).
  • the lower end Pa) is narrowed toward Pa, and the tip Pa is formed to grow into an acute-angled substantially conical shape.
  • the scintillator 1003 is not limited to the case where the phosphor 1003a is formed as a columnar crystal as described above, and the present invention is applied to the scintillator 1003 on, for example, the support film 1003b or the surface of the second substrate 1035.
  • the present invention is also applied to a scintillator formed by curing the paste-like phosphor 1003a.
  • the scintillator 1003 is arranged so that the acute-angled tip Pa of the columnar crystal of the phosphor 1003a faces the lower side, that is, the first substrate 1004 side, and the support film 1003b is attached to the second substrate 1035. Thus, the scintillator 1003 is fixed to the second substrate 1035.
  • the second substrate 1035 is formed of a glass substrate in the same manner as the first substrate 1004 described later. This is because the first substrate 1004 and the second substrate 1035 expand according to the ambient temperature, and if the coefficients of thermal expansion differ from each other at that time, both the substrates 1004 and 1035 bonded together depending on the temperature bend. Problems occur. In order to avoid this problem, in the present embodiment, both the substrates 1004 and 1035 are made of the same glass substrate as described above, but at least the first substrate 1004 and the second substrate 1035 have the same thermal expansion. It is preferable that it is made of a material having a coefficient.
  • the first substrate 1004 is composed of the glass substrate as described above. As shown in FIG. 24, a plurality of surfaces on the surface 1004a of the first substrate 1004 facing the scintillator 1003 are provided. The scanning line 1005 and the plurality of signal lines 1006 are disposed so as to intersect each other. A photoelectric conversion element (radiation detection element) 1007 is provided in each small region r partitioned by a plurality of scanning lines 1005 and a plurality of signal lines 1006 on the surface 1004a of the first substrate 1004.
  • the region is a detection unit P.
  • a photodiode is used as the photoelectric conversion element 1007.
  • a phototransistor or the like can also be used.
  • Each photoelectric conversion element 1007 is connected to a source electrode of a TFT 1008 which is a switch means.
  • the drain electrode of the TFT 1008 is connected to the signal line 1006.
  • the TFT 1008 is turned on when an on-voltage is applied to the gate electrode from a scanning driving unit 1015 described later via the scanning line 1005, and the charge accumulated in the photoelectric conversion element 1007 is released to the signal line 1006. It is like that. Further, the TFT 1008 is turned off when a turn-off voltage is applied to the connected scanning line 1005, so that discharge of charge from the photoelectric conversion element 1007 to the signal line 1006 is stopped and the charge is held in the photoelectric conversion element 1007. It has become.
  • a bias line 1009 is connected to each of the plurality of photoelectric conversion elements 1007 arranged in a row, and each bias line 1009 is one position at a position outside the detection unit P of the first substrate 1004. It is bound to the connection 1010.
  • each scanning line 1005, each signal line 1006, and connection 1010 of the bias line 1009 are connected to input / output terminals (also referred to as pads) 1011 provided in the vicinity of the edge of the first substrate 1004.
  • each input / output terminal 1011 has a COF (Chip On Film) 1012 in which a chip such as an IC 1012a is incorporated, an anisotropic conductive adhesive film (Anisotropic Conductive Film) or an anisotropic conductive paste (Anisotropic). It is connected via an anisotropic conductive adhesive material 1013 such as Conductive Paste).
  • the COF 1012 is routed to the back surface 1004b side of the first substrate 1004, and is connected to the PCB substrate 1033 described above on the back surface 1004b side.
  • the first substrate 1004 portion of the radiation image detector 1001 is thus formed.
  • the electronic component 1032 and the like are not shown.
  • the scanning line 1005, the signal line 1006, the bias line 1009, and the like are formed of aluminum or an alloy containing aluminum.
  • a lower electrode 1007b is provided on the side closer to the first substrate 1004 of each photoelectric conversion element 1007, and an upper electrode 1007a is provided on the side farther from the first substrate 1004.
  • a bias line 1009 is connected to the upper electrode 1007 a of each photoelectric conversion element 1007, and each bias line 1009 is bound to a connection 1010 and connected to a bias power source 1014. Each bias line 1009 supplies a bias voltage (reverse bias voltage in this embodiment) from a bias power supply 1014 to the upper electrode 1007a of each photoelectric conversion element 1007.
  • each photoelectric conversion element 1007 is connected to the source electrode 1008s (denoted as S in FIG. 26) of the TFT 1008, and the gate electrode 1008g (denoted as G in FIG. 26) of each TFT 1008.
  • the drain electrode 1008d (denoted as D in FIG. 26) of each TFT 1008 is connected to each signal line 1006.
  • the scanning drive unit 1015 includes a power supply circuit 1015a that supplies an on-voltage and an off-voltage to the gate driver 1015b, and a gate driver 1015b that switches a voltage applied to each of the lines L1 to Lx of the scanning line 1005 between the on-voltage and the off-voltage. It has. As described above, the gate driver 1015b switches the voltage applied to the gate electrode 1008g of the TFT 1008 via the lines L1 to Lx of the scanning line 1005 between the on voltage and the off voltage, and sets the on state of each TFT 1008. It is designed to control the off state.
  • each signal line 1006 is connected to each readout circuit 1017 formed in the readout IC 1016.
  • the readout circuit 1017 includes an amplifier circuit 1018, a correlated double sampling (Correlated Double Sampling) circuit 1019, and the like.
  • the scintillator 1003 converts the radiation into an electromagnetic wave having a predetermined wavelength, and the photoelectric conversion element 1007 directly below the radiation is converted. Irradiated.
  • the photoelectric conversion element 1007 electric charges (electric signals) are generated according to the dose of irradiated radiation (the amount of electromagnetic waves).
  • the TFT 1008 In the process of reading charges from each photoelectric conversion element 1007, the TFT 1008 in which the on-voltage is applied to the gate electrode 1008g from the gate driver 1015b of the scanning driving means 1015 through the lines L1 to Lx of the scanning line 1005 is turned on. Electric charge is released from the photoelectric conversion element 1007 to the signal line 1006.
  • a voltage value is output from the amplifier circuit 1018 in accordance with the amount of charge released from the photoelectric conversion element 1007, and this is correlated double-sampled by the correlated double sampling circuit 1019, and analog value image data is output to the multiplexer 1021. Is done.
  • the image data sequentially output from the multiplexer 1021 is sequentially converted into digital value image data by the A / D converter 1020, output to the storage means 1023 and sequentially stored.
  • the control unit 1022 includes a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), a computer in which an input / output interface is connected to a bus, an FPGA (Field Programmable Gate Array), and the like. ing. It may be configured by a dedicated control circuit.
  • the control means 1022 controls the operation of each member of the radiation image detector 1001.
  • the control unit 1022 is connected to a storage unit 1023 configured by a DRAM (Dynamic RAM) or the like, and a battery 1024 that supplies power to each functional unit of the radiation image detector 1001.
  • the control unit 1022 is connected to the antenna device 1039 described above, and is connected to the power switch 1036, the indicator 1037, and the like (see FIG. 21), which are not illustrated.
  • the surface of the first substrate 1004 facing the second substrate 1035 that is, the surface 1004a of the first substrate 1004 described above,
  • An inorganic layer 1051 for protecting the photoelectric conversion element 1007, the scanning line 1005, the signal line 1006, the bias line 1009, the connection line 1010, and the like (hereinafter collectively referred to as the wiring 1050) formed on the photoelectric conversion element 1007a. It is covered.
  • the inorganic layer 1051 is formed of an inorganic material containing silicon nitride (SiN) as a main component.
  • the inorganic layer 1051 covers all parts of the surface 1004a of the first substrate 1004 shown in FIG. 24 other than the part of the input / output terminal 1011 to which the COF 1012 (see FIG. 25) is connected. It is formed to do.
  • a planarization layer 1052 is formed on the surface of the inorganic layer 1051 on the second substrate 1035 side in order to flatten the unevenness of the surface of the inorganic layer 1051 caused by each photoelectric conversion element 1007 and the wiring 1050.
  • the planarization layer 1052 is formed by laminating an acrylic resin on the inorganic layer 1051 and curing it.
  • the second substrate 1035 which is arranged and fixed so that the tip Pa of the phosphor 1003a faces the first substrate 1004 side, is formed of the phosphor 1003a of the scintillator 1003.
  • the tip Pa is arranged on the first substrate 1004 in a state where it abuts on the surface of the planarization layer 1052 formed on the first substrate 1004.
  • the phosphor 1003a of the scintillator 1003 and the planarization layer 1052 are not directly bonded.
  • the inorganic layer 1051 is not shown.
  • the first substrate 1004 and the second substrate 1035 are positions between the first substrate 1004 and the second substrate 1035 outside the detection unit P and the scintillator 1003. It is bonded with an adhesive 1053.
  • the first substrate 1004 and the second substrate 1035 are bonded to each other with the internal space C surrounded by the first substrate 1004, the second substrate 1035, and the adhesive 1053 being depressurized from the external atmospheric pressure. 1053 so that the first substrate 1004 and the second substrate 1035 are pressed from the outside by an external pressure, and the phosphor 1003a of the scintillator 1003 abuts (or presses) the planarization layer 1052. ) Is maintained.
  • the planarization layer 1052 is formed to extend to a position outside the detection portion P where each photoelectric conversion element 1007 and the like are formed, and the adhesive 1053 includes at least the planarization layer. It is arranged so as to cover the end face 1052a in the extending direction of 1052 (that is, in the horizontal direction in the drawing).
  • the adhesive 1053 is formed of a moisture-proof material, and an epoxy resin is particularly preferably used.
  • the adhesive 1053 is a photo-curing (ultraviolet-curing) adhesive that cures when irradiated with light (particularly ultraviolet rays), but is not limited thereto. It is also possible to use a thermosetting adhesive that is cured by heating.
  • a photocurable adhesive is used as the adhesive 1053, it is possible to use an adhesive containing a curing accelerator or the like in addition to a photoinitiator, a photopolymerizable compound, or the like.
  • the input / output terminals 1011 are not shown in FIG. 28, and are arranged on the first substrate 1004 further outside the adhesive 1053. That is, the adhesive 1053 is arranged between the end of the detection unit P and each input / output terminal 1011 in FIG. 24, and between the end of the detection unit P and each input / output terminal 1011. The interval is actually designed to be wider than the interval described in FIG. 24 by the amount that the adhesive 1053 is disposed.
  • the wiring 1050 and the like are covered with the inorganic layer 1051 (see FIG. 27).
  • the inorganic layer 1051 is formed densely, that is, without any small holes, or thickly formed, the first layer 1004 or the like is bent due to stress generated in the inorganic layer 1051. Such deformation will occur.
  • the inorganic layer 1051 is formed in a state having innumerable small holes at the microscopic level, and it is assumed that air containing moisture enters the internal space C and the phosphor 1003a of the scintillator 1003 is deliquescent.
  • the inorganic layer 1051 itself cannot reliably prevent the component containing halogen dissolved from the phosphor 1003a from reaching the wiring 1050, and the scanning line 1005 or signal line formed of aluminum or the like can be prevented.
  • the wiring 1050 such as 1006 and the bias line 1009 cannot be prevented from being corroded by a component containing halogen.
  • the radiation image detector 100 when configured as shown in FIG. 30 and the phosphor 106 of the scintillator 107 is formed of a material containing a halide, for example, the substrates 101 and 105 and the adhesive 108 are used.
  • the phosphor 106 When air containing moisture enters the internal space C in which each photoelectric conversion element 102 and scintillator 107 are enclosed, the phosphor 106 is deliquesced, and the components containing halogen are melted to form a signal line formed of aluminum or the like
  • the wiring 103 such as the above may be corroded. If the wiring 103 is corroded, the radiation image detector 100 may not function as designed due to disconnection or the like.
  • the photoelectric conversion elements 102 and the wirings 103 provided on the substrate 101 are covered with an inorganic layer (not shown) and the planarization layer 103 is formed on the upper side. It may be configured as follows. However, in order to prevent the halogen-containing component dissolved from the phosphor 106 from reaching the wiring 103 or the like as described above, the inorganic layer is formed densely (that is, without any small holes) or thickened. If formed, the substrate 101 may be bent or deformed due to stress generated in the inorganic layer.
  • each photoelectric conversion element 102 and the wiring 103 are configured to be covered with an inorganic layer, the inorganic layer cannot be formed more densely or thicker than necessary, and the inorganic layer is a microscopic small hole. It can be formed only in a state having Therefore, normally, it is not possible to reliably prevent a component containing halogen dissolved from the phosphor 106 from reaching the wiring 103 only by forming an inorganic layer covering the wiring 103 or the like.
  • the planarization layer 1052 is formed so as to extend to a position outside the detection portion P (see FIG. 24, FIG. 26, etc.) where the respective photoelectric conversion elements 1007 are formed. It extends to a position below the adhesive 1053. Therefore, as illustrated in FIG. 28, at least in the internal space C, the wiring 1050 and the photoelectric conversion element 1007 are further covered with the planarization layer 1052 from above the inorganic layer 1051.
  • the planarization layer 1052 can appropriately protect the wiring 1050 and the like from components containing halogen, and can reliably prevent the wiring 1050 from being corroded by components containing halogen and the like. It becomes possible.
  • planarization layer 1052 is provided so as to cover a wider area of the first substrate 1004.
  • the planarizing layer 1052 extends to the outside of the adhesive 1053.
  • the planarizing layer 1052 is now formed of an acrylic resin or the like.
  • moisture in the outside air enters the internal space C through the flattening layer 1052, that is, through the flattening layer 1052.
  • the outside air through the planarizing layer 1052 is used. The inflow of moisture inside is more likely to occur.
  • the air in the internal space C becomes damp and the phosphor 1003a of the scintillator 1003 is easily deliquescent. That is, as shown in FIG. 29, when the planarization layer 1052 is provided so as to extend to the outside of the adhesive 1053, the presence of the planarization layer 1052 extended to the outside of the adhesive 1053 causes the phosphor 1003a to In contrast, the deliquescent of the phosphor 1003a of the scintillator 1003, which is the cause of the component containing the halogen, is promoted.
  • the planarization layer 1052 extends from the outside of the detection part P where the photoelectric conversion elements 1007 and the like are formed to a position below the adhesive 1053 on the outside.
  • the flattening layer 1052 is configured not to extend to the outside of the adhesive 1053 but to be disposed so as to cover the end surface 1052a in the extending direction of the flattening layer 1052. Can be kept out of the open air.
  • the adhesive 1053 is formed of a moisture-proof material such as an epoxy-based resin as in the above-described embodiment, moisture in the outside air passes through the adhesive 1053 and the planarizing layer 1052 to the internal space. It is more preferable because it can be surely prevented from entering C.
  • the photoelectric conversion element 1007 formed in the detection unit P, the wiring such as the scanning line 1005, the signal line 1006, the bias line 1009, and the connection 1010 are provided.
  • the planarizing layer 1052 made of an organic material formed so as to cover 1050 or the like is extended to a position outside the detection portion P, and at least an end surface in the extending direction of the planarizing layer 1052 with an adhesive 1053 It was comprised so that 1052a (refer FIG. 28) might be coat
  • the components containing halogen and the like are caused by the planarization layer 1052 to the wiring 1050 and the like. It is blocked from reaching. Therefore, the wiring 1050 and the like are accurately protected by the planarization layer 1052, and the wiring 1050 can be reliably prevented from being corroded by a component containing halogen or the like.
  • the adhesive 1053 is disposed so as to cover the end surface 1052a in the extending direction of the planarization layer 1052, moisture in the outside air is prevented from entering the internal space C through the planarization layer 1052. . Therefore, it is possible to accurately prevent the occurrence of deliquescence of the phosphor 1003a, which is the cause of the component containing halogen from the phosphor 1003a of the scintillator 1003, and the wiring 1050 is corroded by the component containing halogen. It is possible to prevent this from happening more reliably.
  • the planarization layer 1052 made of an organic material is provided over the inorganic layer 1051 as described above, there is a case where the two cannot be formed so as to have strong adhesion.
  • the planarization layer 1052 is extended to a position outside the detection portion P, and at least the end surface 1052a in the extending direction of the planarization layer 1052 is covered with an adhesive 1053. Then, the adhesive 1053 and the planarization layer 1052 are in close contact, and the adhesive 1053 and the inorganic layer 1051 are in close contact.
  • the adhesive 1053 can reinforce the adhesion between the planarization layer 1052 and the inorganic layer 1051, and the planarization layer 1052 can be surely prevented from peeling off from the inorganic layer 1051. There is also an effect.
  • the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. Moreover, you may apply combining the structure of said each embodiment. That is, it is possible to combine the first embodiment and the third embodiment, and it is also possible to combine the second embodiment and the third embodiment.
  • It may be used in the field of radiographic imaging (especially in the medical field).
  • Radiation detection panel Element substrate (first substrate) 4a Surface 5, 5A Scintillator substrate (second substrate) 5a Front surface 5b Back surface 6, 6 * , 1003 Scintillator 15, 1007 Photoelectric conversion element 22, 1053 Adhesive agent 501 Plastic substrate 502 Inorganic thin film 503 Inorganic thin film 504 Glass substrate 505 Plastic substrate 506 Adhesive layer 1003a Phosphor 1004 First substrate ( First substrate) 1004a Surface (surface of the first substrate facing the second substrate) 1005 Scan line 1006 Signal line 1035 Second substrate (second substrate) 1051 Inorganic layer 1052 Flattening layer 1052a End face C Internal space P Detection part r Area

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Toxicology (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

La présente invention concerne un panneau de détection de rayonnement, un détecteur d'image à rayonnement, un procédé de fabrication d'un panneau de détection de rayonnement, et un procédé de fabrication d'un détecteur d'image à rayonnement qui peuvent empêcher l'apparition d'inconvénients indésirables tout en étant légers. Un panneau de détection de rayonnement (3) est pourvu d'un substrat d'élément (4) qui comporte une pluralité d'éléments de conversion photoélectrique (15) agencés sur la surface (4a) de façon bidimensionnelle ; d'un substrat de scintillateur (5) qui comporte un scintillateur (6) qui convertit un rayonnement en lumière, formé sur la surface (5a) de sorte que la pluralité d'éléments de conversion photoélectrique (15) soient disposés de façon opposée ; et d'un adhésif (22) qui est agencé sur la partie qui entoure la pluralité d'éléments de conversion photoélectrique (15) et le scintillateur (6) pour joindre le substrat d'élément (4) et le substrat de scintillateur (5), l'adhésif (22) étant un adhésif qui peut être photo-réticulé, et le substrat de scintillateur (5) est pourvu d'un substrat en plastique (501), qui permet une transmission de la lumière, et d'un film mince inorganique (502) qui permet une transmission de la lumière et qui est formé sur au moins une surface du substrat en plastique (501).
PCT/JP2010/070660 2010-03-02 2010-11-19 Panneau de détection de rayonnement, détecteur d'image à rayonnement, procédé de fabrication de panneau de détection de rayonnement et procédé de fabrication de détecteur d'image à rayonnement WO2011108156A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012502961A JP5660122B2 (ja) 2010-03-02 2010-11-19 放射線検出パネル、放射線画像検出器、放射線検出パネルの製造方法および放射線画像検出器の製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010044821 2010-03-02
JP2010-044821 2010-03-02
JP2010-046017 2010-03-03
JP2010046017 2010-03-03

Publications (1)

Publication Number Publication Date
WO2011108156A1 true WO2011108156A1 (fr) 2011-09-09

Family

ID=44541831

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/070660 WO2011108156A1 (fr) 2010-03-02 2010-11-19 Panneau de détection de rayonnement, détecteur d'image à rayonnement, procédé de fabrication de panneau de détection de rayonnement et procédé de fabrication de détecteur d'image à rayonnement

Country Status (2)

Country Link
JP (1) JP5660122B2 (fr)
WO (1) WO2011108156A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014224714A (ja) * 2013-05-15 2014-12-04 コニカミノルタ株式会社 放射線画像撮影装置
WO2017169049A1 (fr) * 2016-03-30 2017-10-05 浜松ホトニクス株式会社 Détecteur de rayonnement et panneau de scintillateur
WO2017169048A1 (fr) * 2016-03-30 2017-10-05 浜松ホトニクス株式会社 Procédé de fabrication de détecteur de rayonnement
WO2022239464A1 (fr) * 2021-05-13 2022-11-17 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteurs, procédé de production de dispositif d'imagerie à semi-conducteurs et instrument électronique

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004068582A1 (fr) * 2003-01-08 2004-08-12 Semiconductor Energy Laboratory Co., Ltd. Dispositif semi-conducteur et procede de production de ce dispositif
JP2005175436A (ja) * 2003-10-06 2005-06-30 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6172371B1 (en) * 1998-06-15 2001-01-09 General Electric Company Robust cover plate for radiation imager
JP4689249B2 (ja) * 2003-11-28 2011-05-25 株式会社半導体エネルギー研究所 表示装置の作製方法
JP5205107B2 (ja) * 2008-03-31 2013-06-05 東レエンジニアリング株式会社 基板貼合せ方法および基板貼合せ装置
JP5774806B2 (ja) * 2008-08-11 2015-09-09 コニカミノルタ株式会社 放射線検出パネルの製造方法および放射線画像検出器の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004068582A1 (fr) * 2003-01-08 2004-08-12 Semiconductor Energy Laboratory Co., Ltd. Dispositif semi-conducteur et procede de production de ce dispositif
JP2005175436A (ja) * 2003-10-06 2005-06-30 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014224714A (ja) * 2013-05-15 2014-12-04 コニカミノルタ株式会社 放射線画像撮影装置
WO2017169049A1 (fr) * 2016-03-30 2017-10-05 浜松ホトニクス株式会社 Détecteur de rayonnement et panneau de scintillateur
WO2017169048A1 (fr) * 2016-03-30 2017-10-05 浜松ホトニクス株式会社 Procédé de fabrication de détecteur de rayonnement
CN108885274A (zh) * 2016-03-30 2018-11-23 浜松光子学株式会社 放射线检测器的制造方法
US20190107634A1 (en) * 2016-03-30 2019-04-11 Hamamatsu Photonics K.K. Radiation detector and scintillator panel
US10436917B2 (en) 2016-03-30 2019-10-08 Hamamatsu Photonics K.K. Radiation detector and scintillator panel
TWI708958B (zh) * 2016-03-30 2020-11-01 日商濱松赫德尼古斯股份有限公司 放射線檢測器之製造方法
US10983225B2 (en) 2016-03-30 2021-04-20 Hamamatsu Photonics K.K. Radiation detector manufacturing method
TWI740894B (zh) * 2016-03-30 2021-10-01 日商濱松赫德尼古斯股份有限公司 放射器檢測器及閃爍體面板
WO2022239464A1 (fr) * 2021-05-13 2022-11-17 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteurs, procédé de production de dispositif d'imagerie à semi-conducteurs et instrument électronique

Also Published As

Publication number Publication date
JPWO2011108156A1 (ja) 2013-06-20
JP5660122B2 (ja) 2015-01-28

Similar Documents

Publication Publication Date Title
JP5905672B2 (ja) 放射線検出器及びその製造方法
JP5791281B2 (ja) 放射線検出装置及び放射線検出システム
JP5728250B2 (ja) 放射線検出装置、シンチレータパネル、それらの製造方法、および放射線検出システム
EP2672292B1 (fr) Capteur de rayonnement
US8822941B2 (en) Radiation detecting panel and radiographic detector
JP5693173B2 (ja) 放射線検出装置及び放射線検出システム
JP2006220439A (ja) シンチレータパネル、放射線検出装置及びその製造方法
JP2006189377A (ja) シンチレータパネル、放射線検出装置、及び放射線検出システム
JP5906162B2 (ja) 放射線画像検出装置
JP3880094B2 (ja) 放射線検出装置及びその製造方法
TWI591368B (zh) Radiation detector and manufacturing method thereof
JP2007071836A (ja) 放射線検出装置及び放射線撮像システム
WO2014050861A1 (fr) Dispositif de détection d'image radiographique
JP5660122B2 (ja) 放射線検出パネル、放射線画像検出器、放射線検出パネルの製造方法および放射線画像検出器の製造方法
WO2016111093A1 (fr) Détecteur de rayonnement et son procédé de fabrication
JP6005092B2 (ja) 放射線検出装置および放射線検出装置の製造方法
JP5774806B2 (ja) 放射線検出パネルの製造方法および放射線画像検出器の製造方法
JP2010286447A (ja) 放射線検出器及びその製造方法
JP2010261720A (ja) 放射線検出パネルの製造方法および放射線画像検出器の製造方法
JP2017090090A (ja) 放射線検出器及びその製造方法
JP2007057428A (ja) 放射線検出装置及び放射線撮像システム
JP2011174830A (ja) 放射線検出パネルおよび放射線画像検出器
TWI486618B (zh) Radiation detector and manufacturing method thereof
JP2012037454A (ja) 放射線検出器及びその製造方法
JP2014059246A (ja) 放射線検出器およびその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10847052

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2012502961

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10847052

Country of ref document: EP

Kind code of ref document: A1