JP5659632B2 - ボロンドープｐ型シリコンウェーハの鉄濃度分析方法および分析装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法 - Google Patents

ボロンドープｐ型シリコンウェーハの鉄濃度分析方法および分析装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法 Download PDF

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JP5659632B2
JP5659632B2 JP2010190398A JP2010190398A JP5659632B2 JP 5659632 B2 JP5659632 B2 JP 5659632B2 JP 2010190398 A JP2010190398 A JP 2010190398A JP 2010190398 A JP2010190398 A JP 2010190398A JP 5659632 B2 JP5659632 B2 JP 5659632B2
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silicon wafer
boron
iron concentration
wafer
pair
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JP2012049345A (ja
JP2012049345A5 (https=
Inventor
隆司 大野
隆司 大野
久雄 伊賀
久雄 伊賀
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Sumco Corp
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Sumco Corp
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Priority to JP2010190398A priority Critical patent/JP5659632B2/ja
Priority to US13/191,740 priority patent/US8481346B2/en
Priority to EP11178098.7A priority patent/EP2423956B1/en
Publication of JP2012049345A publication Critical patent/JP2012049345A/ja
Publication of JP2012049345A5 publication Critical patent/JP2012049345A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2010190398A 2010-08-27 2010-08-27 ボロンドープｐ型シリコンウェーハの鉄濃度分析方法および分析装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法 Active JP5659632B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010190398A JP5659632B2 (ja) 2010-08-27 2010-08-27 ボロンドープｐ型シリコンウェーハの鉄濃度分析方法および分析装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法
US13/191,740 US8481346B2 (en) 2010-08-27 2011-07-27 Method of analyzing iron concentration of boron-doped P-type silicon wafer and method of manufacturing silicon wafer
EP11178098.7A EP2423956B1 (en) 2010-08-27 2011-08-19 Method of analyzing iron concentration of boron-doped p-type silicon wafer and method of manufacturing silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010190398A JP5659632B2 (ja) 2010-08-27 2010-08-27 ボロンドープｐ型シリコンウェーハの鉄濃度分析方法および分析装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法

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JP2012049345A JP2012049345A (ja) 2012-03-08
JP2012049345A5 JP2012049345A5 (https=) 2013-09-12
JP5659632B2 true JP5659632B2 (ja) 2015-01-28

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US (1) US8481346B2 (https=)
EP (1) EP2423956B1 (https=)
JP (1) JP5659632B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5664591B2 (ja) * 2012-04-26 2015-02-04 信越化学工業株式会社 太陽電池セル及びその製造方法
CN103983540B (zh) * 2014-05-13 2016-03-16 北京七星华创电子股份有限公司 一种判断体铁测试值可信度的方法
JP6344168B2 (ja) 2014-09-11 2018-06-20 株式会社Sumco ボロンドープｐ型シリコンウェーハの金属汚染評価方法および評価装置、ならびにボロンドープｐ型シリコンウェーハの製造方法
CN106505004B (zh) * 2015-09-07 2019-05-03 中芯国际集成电路制造(上海)有限公司 检测晶圆中铁含量异常的装置及其方法
CN108140592B (zh) * 2015-10-07 2022-08-02 胜高股份有限公司 p型硅晶圆中的Fe浓度测量方法
FR3055563B1 (fr) * 2016-09-08 2018-09-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de tri de plaquettes en silicium en fonction de leur duree de vie volumique
JP6848849B2 (ja) * 2017-12-22 2021-03-24 株式会社Sumco ｐ型シリコンウェーハ中のＦｅ濃度測定方法及びＳＰＶ測定装置
JP6848850B2 (ja) * 2017-12-22 2021-03-24 株式会社Sumco ｐ型シリコンウェーハ中のＦｅ濃度測定方法及びＳＰＶ測定装置
DE112018006519T5 (de) * 2017-12-22 2020-09-24 Sumco Corporation Verfahren zur Messung der Fe-Konzentration in einem p-Typ-Siliziumwafer und SPV-Messvorrichtung
CN112908876A (zh) * 2021-01-18 2021-06-04 上海新昇半导体科技有限公司 硅片金属污染测试方法及装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0448713A (ja) * 1990-06-15 1992-02-18 Hitachi Ltd 半導体装置の形成方法及び露光装置
JP2843815B2 (ja) * 1992-08-12 1999-01-06 住友シチックス株式会社 ＢドープＰ型Ｓｉ中のＦｅ濃度測定方法
JPH07249666A (ja) * 1994-03-11 1995-09-26 Komatsu Electron Metals Co Ltd シリコンウェーハの鉄濃度測定方法
JPH0864650A (ja) * 1994-08-24 1996-03-08 Komatsu Electron Metals Co Ltd Ｆｅ−Ｂ濃度測定によるシリコンウェーハの評価方法
EP2077346B1 (en) * 2002-10-18 2012-09-26 Sumco Corporation Method for measuring point defect distribution of silicon single crystal lingot
JP2005064054A (ja) * 2003-08-18 2005-03-10 Sumitomo Mitsubishi Silicon Corp シリコンウェーハ中の鉄濃度の測定方法
JP4416566B2 (ja) 2004-04-26 2010-02-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 不純物金属濃度測定の方法
KR100533959B1 (ko) 2004-06-30 2005-12-06 삼성전자주식회사 반도체 장치 제조 방법

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Publication number Publication date
JP2012049345A (ja) 2012-03-08
US20120049329A1 (en) 2012-03-01
US8481346B2 (en) 2013-07-09
EP2423956A2 (en) 2012-02-29
EP2423956B1 (en) 2019-02-27
EP2423956A3 (en) 2014-04-23

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