JP5659632B2 - ボロンドープｐ型シリコンウェーハの鉄濃度分析方法および分析装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法 - Google Patents

ボロンドープｐ型シリコンウェーハの鉄濃度分析方法および分析装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法 Download PDF

Info

Publication number
JP5659632B2
JP5659632B2 JP2010190398A JP2010190398A JP5659632B2 JP 5659632 B2 JP5659632 B2 JP 5659632B2 JP 2010190398 A JP2010190398 A JP 2010190398A JP 2010190398 A JP2010190398 A JP 2010190398A JP 5659632 B2 JP5659632 B2 JP 5659632B2
Authority
JP
Japan
Prior art keywords
silicon wafer
boron
iron concentration
wafer
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010190398A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012049345A5 (OSRAM
JP2012049345A (ja
Inventor
隆司 大野
隆司 大野
久雄 伊賀
久雄 伊賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2010190398A priority Critical patent/JP5659632B2/ja
Priority to US13/191,740 priority patent/US8481346B2/en
Priority to EP11178098.7A priority patent/EP2423956B1/en
Publication of JP2012049345A publication Critical patent/JP2012049345A/ja
Publication of JP2012049345A5 publication Critical patent/JP2012049345A5/ja
Application granted granted Critical
Publication of JP5659632B2 publication Critical patent/JP5659632B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2010190398A 2010-08-27 2010-08-27 ボロンドープｐ型シリコンウェーハの鉄濃度分析方法および分析装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法 Active JP5659632B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010190398A JP5659632B2 (ja) 2010-08-27 2010-08-27 ボロンドープｐ型シリコンウェーハの鉄濃度分析方法および分析装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法
US13/191,740 US8481346B2 (en) 2010-08-27 2011-07-27 Method of analyzing iron concentration of boron-doped P-type silicon wafer and method of manufacturing silicon wafer
EP11178098.7A EP2423956B1 (en) 2010-08-27 2011-08-19 Method of analyzing iron concentration of boron-doped p-type silicon wafer and method of manufacturing silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010190398A JP5659632B2 (ja) 2010-08-27 2010-08-27 ボロンドープｐ型シリコンウェーハの鉄濃度分析方法および分析装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法

Publications (3)

Publication Number Publication Date
JP2012049345A JP2012049345A (ja) 2012-03-08
JP2012049345A5 JP2012049345A5 (OSRAM) 2013-09-12
JP5659632B2 true JP5659632B2 (ja) 2015-01-28

Family

ID=44582418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010190398A Active JP5659632B2 (ja) 2010-08-27 2010-08-27 ボロンドープｐ型シリコンウェーハの鉄濃度分析方法および分析装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法

Country Status (3)

Country Link
US (1) US8481346B2 (OSRAM)
EP (1) EP2423956B1 (OSRAM)
JP (1) JP5659632B2 (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5664591B2 (ja) * 2012-04-26 2015-02-04 信越化学工業株式会社 太陽電池セル及びその製造方法
CN103983540B (zh) * 2014-05-13 2016-03-16 北京七星华创电子股份有限公司 一种判断体铁测试值可信度的方法
JP6344168B2 (ja) 2014-09-11 2018-06-20 株式会社Sumco ボロンドープｐ型シリコンウェーハの金属汚染評価方法および評価装置、ならびにボロンドープｐ型シリコンウェーハの製造方法
CN106505004B (zh) * 2015-09-07 2019-05-03 中芯国际集成电路制造(上海)有限公司 检测晶圆中铁含量异常的装置及其方法
DE112016004633T5 (de) * 2015-10-07 2018-06-21 Sumco Corporation VERFAHREN ZUM MESSEN DER Fe-KONZENTRATION IN EINEM P-TYP-SILIZIUMWAFER
FR3055563B1 (fr) * 2016-09-08 2018-09-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de tri de plaquettes en silicium en fonction de leur duree de vie volumique
US11387151B2 (en) 2017-12-22 2022-07-12 Sumco Corporation Method of measuring concentration of Fe in p-type silicon wafer and SPV measurement apparatus
JP6848850B2 (ja) * 2017-12-22 2021-03-24 株式会社Sumco ｐ型シリコンウェーハ中のＦｅ濃度測定方法及びＳＰＶ測定装置
JP6848849B2 (ja) * 2017-12-22 2021-03-24 株式会社Sumco ｐ型シリコンウェーハ中のＦｅ濃度測定方法及びＳＰＶ測定装置
CN112908876A (zh) * 2021-01-18 2021-06-04 上海新昇半导体科技有限公司 硅片金属污染测试方法及装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0448713A (ja) * 1990-06-15 1992-02-18 Hitachi Ltd 半導体装置の形成方法及び露光装置
JP2843815B2 (ja) * 1992-08-12 1999-01-06 住友シチックス株式会社 ＢドープＰ型Ｓｉ中のＦｅ濃度測定方法
JPH07249666A (ja) * 1994-03-11 1995-09-26 Komatsu Electron Metals Co Ltd シリコンウェーハの鉄濃度測定方法
JPH0864650A (ja) * 1994-08-24 1996-03-08 Komatsu Electron Metals Co Ltd Ｆｅ−Ｂ濃度測定によるシリコンウェーハの評価方法
TWI231357B (en) * 2002-10-18 2005-04-21 Sumitomo Mitsubishi Silicon Method for measuring defect-distribution in silicon monocrystal ingot
JP2005064054A (ja) * 2003-08-18 2005-03-10 Sumitomo Mitsubishi Silicon Corp シリコンウェーハ中の鉄濃度の測定方法
JP4416566B2 (ja) 2004-04-26 2010-02-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 不純物金属濃度測定の方法
KR100533959B1 (ko) 2004-06-30 2005-12-06 삼성전자주식회사 반도체 장치 제조 방법

Also Published As

Publication number Publication date
EP2423956B1 (en) 2019-02-27
US20120049329A1 (en) 2012-03-01
EP2423956A3 (en) 2014-04-23
JP2012049345A (ja) 2012-03-08
EP2423956A2 (en) 2012-02-29
US8481346B2 (en) 2013-07-09

Similar Documents

Publication Publication Date Title
JP5659632B2 (ja) ボロンドープｐ型シリコンウェーハの鉄濃度分析方法および分析装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法
TWI844077B (zh) 藉助少數載子壽命表徵矽片捕獲金屬雜質效率的裝置和方法
US9559222B2 (en) Method and tool to reverse the charges in anti-reflection films used for solar cell applications
TWI611489B (zh) 半導體基板的評估方法及半導體基板的製造方法
JP4940737B2 (ja) 少数キャリア拡散長測定方法およびシリコンウェーハの製造方法
JP5407212B2 (ja) 熱処理炉評価方法および半導体ウェーハの製造方法
JP6702270B2 (ja) 半導体基板の評価方法
JP6605386B2 (ja) 金属汚染濃度分析方法
CN105247669B (zh) 半导体晶圆的评价方法
JP5577842B2 (ja) ボロンドープｐ型シリコンウェーハの鉄濃度測定方法および測定装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法
JP2005064054A (ja) シリコンウェーハ中の鉄濃度の測定方法
JP5471780B2 (ja) ボロンドープｐ型シリコン中の鉄濃度測定方法およびボロンドープｐ型シリコンウェーハの製造方法
Ochoa et al. Understanding the origin of Tabula Rasa-induced defects in n-type Cz c-Si: The case of nitrogen atmosphere
Abbott et al. Iron contamination in silicon solar cell production environments
Li et al. Applications of time-resolved photoluminescence for characterizing silicon photovoltaic materials
JP5556090B2 (ja) ボロンドープｐ型シリコン中の鉄濃度分析における定量分析限界決定方法
JP5545131B2 (ja) ボロンドープｐ型シリコン中の鉄濃度分析における定量分析限界決定方法
JP6421711B2 (ja) 再結合ライフタイム測定の前処理方法
JP7120189B2 (ja) 半導体基板の評価方法
JP2007053123A (ja) シリコンウェーハ表面の安定化判定方法およびシリコンウェーハの製造方法
Grant et al. Light enhanced hydrofluoric acid passivation for evaluating silicon bulk lifetimes
Ipri et al. The effect of heavy metal contamination in SIMOX on radiation hardness of MOS transistors
JP2007042942A (ja) シリコンウェーハの品質評価方法およびシリコンウェーハの製造方法
Juhl et al. Hydrogen Passivation for Estimating the Bulk Lifetime of Bare Silicon Wafers
Kang et al. Behaviour of total surface charge in SiO2–Si system under short-pulsed ultraviolet irradiation cycles characterised by surface photo voltage technique

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130726

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130726

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140319

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140408

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140609

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140715

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141007

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20141015

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141104

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141117

R150 Certificate of patent or registration of utility model

Ref document number: 5659632

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250