JP5656357B2 - 半導体光センサ素子およびその製造方法 - Google Patents
半導体光センサ素子およびその製造方法 Download PDFInfo
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 2
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Description
貼着体を接着部の一部にて切断して、各々が接着部にて接合されたセンサチップおよび光拡散チップからなる半導体光センサ素子の複数に個片化する工程と、を含むことを特徴とする。
センサチップに対して少なくともセンサ部の周囲にて接着部を介して固着され、かつ、ウエハ厚を隔ててセンサ部に対向する光拡散部を備えかつウエハ厚を有する光拡散チップと、からなることを特徴とする。
図2は半導体ウエハ101の模式的な概略平面図である。例えば、6インチもしくは8インチの半導体ウエハ101の表面に、半導体プロセスによりマトリクス状にセンサ部111の複数すなわちアレイが形成される。図においてセンサ部111を矩形で表しているが、これは概略であり、その形状や個数に限定されない。
上記半導体ウエハと同じサイズ、6インチもしくは8インチで、300〜2000μm厚のガラスウエハ(ガラス平板4)を準備する。ガラスはその屈折率の範囲が1.45〜2.00と目的波長に合わせて選択することができる。
次に、図5に示すように、センサ部を有する半導体ウエハ101とガラスウエハ4を接着部9を用いて接合する。図5は半導体ウエハ101とガラスウエハ4からなる貼着体の概略斜視図である。光拡散部を外側にしたガラスウエハ4とセンサ部を内側にした半導体ウエハ101とを貼り付け、圧着固定する。接着部の接着材料としては耐熱性のある、たとえばベンゾシクロブテン(Benzocyclobutene:BCB)、ポリイミドなどの感光性ポリマー材料が使用でき、紫外線硬化型或いは熱硬化型が用いられる。感光性接着剤を用いた場合、ガラスウエハ側から光照射を行い、接着部9が光硬化することにより接合を実行してもよい。接着部9は、半導体ウエハ101とガラスウエハ4の間の所定距離維持の接合と共に、以後のグラインディング工程、貫通電極形成工程、ダイシング工程などの、個々のセンサ部の封止機能を果たす。
ダイシング装置から取出したガラスウエハ4と一体となった半導体ウエハ101の裏面(露出面)を研削する。
ガラスウエハ4と一体となった半導体ウエハ101の第2主面に貫通電極、外部配線および外部端子を形成する。概要は、貫通穴を深堀エッチングを用いて設け、Cuメッキなどにより配線を引きだし電極パッドを形成するのである。
図12に示すように、第1ダイシングブレード51を用いたブレードダイシング法にて所定のサイズにガラスウエハ4部分とこれに近接する接着部9の一部をカットして、ダイシング領域に溝41を形成する。ここでは、ダイシング装置の支持テーブル(図示せず)に半導体ウエハ101とガラスウエハ4からなる貼着体を、その加工面がブレードで処理できるように配置する。カット幅(ブレード厚)としては、以後の工程で再度カットする必要があるため60〜100μm程度の幅が推奨される。図12に示さないが、ガラスウエハ4側から第1ダイシングブレード51にてガラスウエハ4を半導体ウエハ101までハーフカットすることもできる。なお、ダイシングブレードを用いないレーザー法によっても溝形成(ハーフカット)は可能である。
図14に示すように、ガラスウエハ4と一体となった半導体ウエハ101を、第2ダイシングブレード52(溝形成用ブレード51よりも薄い)により、遮光性樹脂層5のダイシング領域の中央に沿って厚さ方向にガラスウエハ4側から切断し、ダイシング領域に分割面411を形成して、個別の半導体光センサ素子の複数に分割する。この工程では、第2ダイシングブレードは、先の遮光性樹脂層形成工程でハーフカットした溝幅より狭くしてフルカットできかつ、ガラスウエハ4の側面に遮光性樹脂層5が残るように、厚さ、位置が設定される。ダイシング装置においては、ダイシングテープ(図示せず)を半導体ウエハ101側に貼着して、実行される。
第2の実施例としては、図15に示すように、半導体光センサ素子102は、透光性チップであるガラスウエハ4と、これに接着部9で貼り付けられた半導体チップ10とで構成され、ガラスウエハ4の側面全体と半導体チップ10の側面全体に遮光性樹脂層5が設けられた構造である以外、図1の半導体光センサ素子と同一である。
図16(D)に示すように、遮光性樹脂層5で一体となったガラスウエハ4と半導体ウエハ101を、所定の第2ダイシングブレード52により、遮光性樹脂層5の中央に沿って厚さ方向に個別の半導体光センサ素子に分割する。この工程では、第2ダイシングブレードは、先の遮光性樹脂層形成工程でカットした溝幅より狭くしてカットでき、ガラスウエハ4の側面に遮光性樹脂層5が残るように、設定される。
第1の実施例の変形例としては、図17に示すように、半導体光センサ素子102は、光拡散チップ40と、これに接着部9で貼り付けられた半導体チップ10とで構成され、光拡散チップ40の側面を階段形状SPに多段、たとえば2段として、その側面に遮光性樹脂層5が受光部に向けてせり出し開口を画定するように設けられた構造である以外、図1の半導体光センサ素子と同一である。
5 遮光性樹脂層
6 貫通電極
7 外部端子
8 金属パッド
9 接着部
10 センサチップ
11 受光部
14、16 絶縁膜
15 配線
41 溝
51 第1ダイシングブレード
52 第2ダイシングブレード
62 開口
100 半導体光センサ素子
101 半導体ウエハ
111 センサ部
121 光拡散部
SP 階段形状
CL 傾斜形状
Claims (8)
- 表面側に各々が光電変換素子の受光部を含む複数のセンサ部のアレイを有する半導体ウエハと表面側に光拡散部を有する透光性光学ウエハとを有する貼着体であって、前記半導体ウエハの前記表面と前記透光性光学ウエハの裏面とが前記センサ部の各々の周囲に設けられた接着部を介して固着された前記貼着体を形成する工程と、
前記貼着体を前記接着部の一部にて切断して、各々が前記接着部にて接合されたセンサチップおよび光拡散チップからなる半導体光センサ素子の複数に個片化する工程と、を含み、
前記個片化する工程は、前記貼着体の前記透光性光学ウエハを貫通してその底部が前記接着部からなる溝を形成し、前記溝に遮光性樹脂を充填して遮光性樹脂層を形成する工程と、前記溝より狭い幅で前記遮光性樹脂層および前記半導体ウエハを切断することにより、前記遮光性樹脂層を前記光拡散チップの側面および前記接着部の側面の一部に設ける工程と、を含むことを特徴とする半導体光センサ素子の製造方法。 - 前記透光性光学ウエハおよび半導体ウエハの前記貼着体を形成した後に、前記半導体ウエハを研削して半導体ウエハの厚さを減少させる工程を含むことを特徴とする請求項1に記載の半導体光センサ素子の製造方法。
- ガラス平板の主面に化学又は物理的エッチング処理を施して得られる前記光拡散部を有する前記透光性光学ウエハを形成する工程を含むことを特徴とする請求項1又は2に記載の半導体光センサ素子の製造方法。
- 前記化学又は物理的エッチング処理は、前記ガラス平板の主面に研磨粒子を圧搾空気で吹き付けて凹凸を形成する物理的エッチング処理のサンドブラスト粗面化方法であることを特徴とする請求項3記載の半導体光センサ素子の製造方法。
- 前記化学又は物理的エッチング処理は、前記ガラス平板の主面にフッ化水素水溶液を接触させて、ガラス表面を溶かして凹凸を形成する化学的エッチング処理の粗面化方法であることを特徴とする請求項3記載の半導体光センサ素子の製造方法。
- 光電変換素子の受光部を含むセンサ部を有するセンサチップと、
前記センサチップに対して少なくとも前記センサ部の周囲にて接着部を介して固着され、かつ、ウエハ厚を隔てて前記センサ部に対向する光拡散部を備えかつ前記ウエハ厚を有する光拡散チップと、
前記光拡散チップの側面および前記接着部の側面の前記光拡散チップに近接する一部が共通な外部平坦面として形成された遮光性樹脂層と、を有することを特徴とする半導体光センサ素子。 - 前記光拡散チップがガラス平板からなり、前記光拡散部は前記ガラス平板主面が粗面化された表面であることを特徴とする請求項6記載の半導体光センサ素子。
- 前記センサ部に電気的に接続されかつ前記センサチップを貫通して露出する貫通電極を備えたことを特徴とする請求項6又は7のいずれか1記載の半導体光センサ素子。
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