JP5641998B2 - 半導体装置の寿命推定方法 - Google Patents

半導体装置の寿命推定方法 Download PDF

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Publication number
JP5641998B2
JP5641998B2 JP2011067260A JP2011067260A JP5641998B2 JP 5641998 B2 JP5641998 B2 JP 5641998B2 JP 2011067260 A JP2011067260 A JP 2011067260A JP 2011067260 A JP2011067260 A JP 2011067260A JP 5641998 B2 JP5641998 B2 JP 5641998B2
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temperature
semiconductor device
lifetime
life
difference
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JP2011067260A
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Japanese (ja)
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JP2012202801A (ja
JP2012202801A5 (enExample
Inventor
真一 井浦
真一 井浦
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2011067260A priority Critical patent/JP5641998B2/ja
Priority to DE102011088728.8A priority patent/DE102011088728B4/de
Publication of JP2012202801A publication Critical patent/JP2012202801A/ja
Publication of JP2012202801A5 publication Critical patent/JP2012202801A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests

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  • Testing Of Individual Semiconductor Devices (AREA)
JP2011067260A 2011-03-25 2011-03-25 半導体装置の寿命推定方法 Active JP5641998B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011067260A JP5641998B2 (ja) 2011-03-25 2011-03-25 半導体装置の寿命推定方法
DE102011088728.8A DE102011088728B4 (de) 2011-03-25 2011-12-15 Lebensdauerschätzverfahren für eine Halbleitervorrichtung

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JP2011067260A JP5641998B2 (ja) 2011-03-25 2011-03-25 半導体装置の寿命推定方法

Publications (3)

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JP2012202801A JP2012202801A (ja) 2012-10-22
JP2012202801A5 JP2012202801A5 (enExample) 2013-07-04
JP5641998B2 true JP5641998B2 (ja) 2014-12-17

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JP (1) JP5641998B2 (enExample)
DE (1) DE102011088728B4 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103884927B (zh) * 2012-12-21 2016-05-25 中国科学院金属研究所 一种力电热多场耦合下微电子产品可靠性测试方法
CN108445371B (zh) * 2018-01-18 2021-02-19 国网浙江省电力公司舟山供电公司 绝缘栅双极型晶体管使用寿命预分拣方法
AT522383A1 (de) * 2019-03-12 2020-10-15 Schneider Electric Power Drives Gmbh Verfahren zur bewertung der thermischen belastung eines umrichters
CN111060798B (zh) * 2019-12-18 2021-10-15 中国测试技术研究院流量研究所 一种mos管自动功率老化测试系统及测试方法
JP2022077373A (ja) * 2020-11-11 2022-05-23 富士電機株式会社 寿命診断装置、半導体装置、寿命診断方法、
CN118676460B (zh) * 2024-07-04 2025-02-11 深圳永泰数能科技有限公司 一种具有防爆裂和寿命预测的电池模组及控制方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0392471B1 (en) * 1989-04-10 1997-01-02 Hitachi, Ltd. Method for evaluating life of connection
JP4591246B2 (ja) 2005-07-14 2010-12-01 株式会社日立製作所 電力変換器

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DE102011088728B4 (de) 2017-02-09
DE102011088728A1 (de) 2012-09-27
JP2012202801A (ja) 2012-10-22

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