JP5640011B2 - 高エネルギーイオンを使用する磁気薄膜のパターン化 - Google Patents

高エネルギーイオンを使用する磁気薄膜のパターン化 Download PDF

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Publication number
JP5640011B2
JP5640011B2 JP2011533240A JP2011533240A JP5640011B2 JP 5640011 B2 JP5640011 B2 JP 5640011B2 JP 2011533240 A JP2011533240 A JP 2011533240A JP 2011533240 A JP2011533240 A JP 2011533240A JP 5640011 B2 JP5640011 B2 JP 5640011B2
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JP
Japan
Prior art keywords
thin film
magnetic thin
resist
magnetic
pattern
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2011533240A
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English (en)
Japanese (ja)
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JP2012506601A5 (enExample
JP2012506601A (ja
Inventor
オムカラム ナラマス，
オムカラム ナラマス，
スティーヴン ヴァーハーヴァーベイク，
スティーヴン ヴァーハーヴァーベイク，
マジェード フォード，
マジェード フォード，
マハリンガム ヴェンカテサン，
マハリンガム ヴェンカテサン，
ネティ エム． クリシュナ，
ネティ エム． クリシュナ，
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Priority claimed from US12/255,865 external-priority patent/US8551578B2/en
Priority claimed from US12/255,833 external-priority patent/US8535766B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2012506601A publication Critical patent/JP2012506601A/ja
Publication of JP2012506601A5 publication Critical patent/JP2012506601A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/855—Coating only part of a support with a magnetic layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
    • G11B5/746—Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/82—Disk carriers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Heads (AREA)
JP2011533240A 2008-10-22 2009-10-15 高エネルギーイオンを使用する磁気薄膜のパターン化 Expired - Fee Related JP5640011B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/255,865 US8551578B2 (en) 2008-02-12 2008-10-22 Patterning of magnetic thin film using energized ions and thermal excitation
US12/255,833 US8535766B2 (en) 2008-10-22 2008-10-22 Patterning of magnetic thin film using energized ions
US12/255,833 2008-10-22
US12/255,865 2008-10-22
PCT/US2009/060868 WO2010048030A2 (en) 2008-10-22 2009-10-15 Patterning of magnetic thin film using energized ions

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014114835A Division JP5863882B2 (ja) 2008-10-22 2014-06-03 高エネルギーイオンを使用する磁気薄膜のパターン化

Publications (3)

Publication Number Publication Date
JP2012506601A JP2012506601A (ja) 2012-03-15
JP2012506601A5 JP2012506601A5 (enExample) 2012-11-29
JP5640011B2 true JP5640011B2 (ja) 2014-12-10

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JP2011533240A Expired - Fee Related JP5640011B2 (ja) 2008-10-22 2009-10-15 高エネルギーイオンを使用する磁気薄膜のパターン化
JP2014114835A Expired - Fee Related JP5863882B2 (ja) 2008-10-22 2014-06-03 高エネルギーイオンを使用する磁気薄膜のパターン化

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Country Status (5)

Country Link
JP (2) JP5640011B2 (enExample)
KR (1) KR101622568B1 (enExample)
CN (2) CN102197426B (enExample)
TW (1) TWI478159B (enExample)
WO (1) WO2010048030A2 (enExample)

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JP5238781B2 (ja) * 2010-09-17 2013-07-17 株式会社東芝 磁気記録媒体の製造方法
US8679356B2 (en) 2011-05-19 2014-03-25 Varian Semiconductor Equipment Associates, Inc. Mask system and method of patterning magnetic media
FR2991096B1 (fr) * 2012-05-22 2014-06-20 Centre Nat Rech Scient Procede de fabrication d'un film comprenant des microstructures magnetiques tridimensionnelles
US9384773B2 (en) * 2013-03-15 2016-07-05 HGST Netherlands, B.V. Annealing treatment for ion-implanted patterned media
KR102260263B1 (ko) 2014-10-14 2021-06-02 엘지디스플레이 주식회사 터치 패널 및 터치 패널 일체형 유기 발광 표시 장치
KR102299875B1 (ko) 2014-11-07 2021-09-07 엘지디스플레이 주식회사 터치 패널, 이의 제조 방법 및 터치 패널 일체형 유기 발광 표시 장치
KR20170012798A (ko) * 2015-07-24 2017-02-03 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법

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Also Published As

Publication number Publication date
JP2014209404A (ja) 2014-11-06
WO2010048030A4 (en) 2010-09-02
WO2010048030A3 (en) 2010-07-22
KR20110090943A (ko) 2011-08-10
CN103996404A (zh) 2014-08-20
WO2010048030A2 (en) 2010-04-29
TWI478159B (zh) 2015-03-21
CN102197426B (zh) 2014-11-05
JP5863882B2 (ja) 2016-02-17
CN103996404B (zh) 2017-08-04
CN102197426A (zh) 2011-09-21
JP2012506601A (ja) 2012-03-15
TW201029003A (en) 2010-08-01
KR101622568B1 (ko) 2016-05-19

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