TWI478159B - 使用能量化離子以圖案化磁性薄膜之方法、處理記錄媒體之裝置及磁性記錄媒體 - Google Patents
使用能量化離子以圖案化磁性薄膜之方法、處理記錄媒體之裝置及磁性記錄媒體 Download PDFInfo
- Publication number
- TWI478159B TWI478159B TW098135648A TW98135648A TWI478159B TW I478159 B TWI478159 B TW I478159B TW 098135648 A TW098135648 A TW 098135648A TW 98135648 A TW98135648 A TW 98135648A TW I478159 B TWI478159 B TW I478159B
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- Prior art keywords
- magnetic film
- magnetic
- resist
- pattern
- ions
- Prior art date
Links
- 150000002500 ions Chemical class 0.000 title claims description 97
- 239000010409 thin film Substances 0.000 title claims description 9
- 238000000059 patterning Methods 0.000 title claims description 8
- 238000012545 processing Methods 0.000 title claims description 4
- 239000010408 film Substances 0.000 claims description 165
- 238000000034 method Methods 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 42
- 229910052796 boron Inorganic materials 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 37
- 230000035515 penetration Effects 0.000 claims description 31
- -1 cerium ions Chemical class 0.000 claims description 27
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 21
- 230000005284 excitation Effects 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 14
- 239000001307 helium Substances 0.000 claims description 9
- 229910052734 helium Inorganic materials 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 8
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000001127 nanoimprint lithography Methods 0.000 claims description 7
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910000531 Co alloy Inorganic materials 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000011253 protective coating Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- 238000001376 thermoplastic nanoimprint lithography Methods 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000005224 laser annealing Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 description 50
- 239000006249 magnetic particle Substances 0.000 description 19
- 230000005415 magnetization Effects 0.000 description 17
- 239000007943 implant Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910019222 CoCrPt Inorganic materials 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000000696 magnetic material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- AZUYLZMQTIKGSC-UHFFFAOYSA-N 1-[6-[4-(5-chloro-6-methyl-1H-indazol-4-yl)-5-methyl-3-(1-methylindazol-5-yl)pyrazol-1-yl]-2-azaspiro[3.3]heptan-2-yl]prop-2-en-1-one Chemical compound ClC=1C(=C2C=NNC2=CC=1C)C=1C(=NN(C=1C)C1CC2(CN(C2)C(C=C)=O)C1)C=1C=C2C=NN(C2=CC=1)C AZUYLZMQTIKGSC-UHFFFAOYSA-N 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910002555 FeNi Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000001509 photo nanoimprint lithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910020708 Co—Pd Inorganic materials 0.000 description 1
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910001429 cobalt ion Inorganic materials 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005329 nanolithography Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/855—Coating only part of a support with a magnetic layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
- G11B5/746—Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/255,865 US8551578B2 (en) | 2008-02-12 | 2008-10-22 | Patterning of magnetic thin film using energized ions and thermal excitation |
| US12/255,833 US8535766B2 (en) | 2008-10-22 | 2008-10-22 | Patterning of magnetic thin film using energized ions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201029003A TW201029003A (en) | 2010-08-01 |
| TWI478159B true TWI478159B (zh) | 2015-03-21 |
Family
ID=42119905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098135648A TWI478159B (zh) | 2008-10-22 | 2009-10-21 | 使用能量化離子以圖案化磁性薄膜之方法、處理記錄媒體之裝置及磁性記錄媒體 |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JP5640011B2 (enExample) |
| KR (1) | KR101622568B1 (enExample) |
| CN (2) | CN102197426B (enExample) |
| TW (1) | TWI478159B (enExample) |
| WO (1) | WO2010048030A2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5238780B2 (ja) * | 2010-09-17 | 2013-07-17 | 株式会社東芝 | 磁気記録媒体とその製造方法及び磁気記録装置 |
| JP5238781B2 (ja) * | 2010-09-17 | 2013-07-17 | 株式会社東芝 | 磁気記録媒体の製造方法 |
| US8679356B2 (en) | 2011-05-19 | 2014-03-25 | Varian Semiconductor Equipment Associates, Inc. | Mask system and method of patterning magnetic media |
| FR2991096B1 (fr) * | 2012-05-22 | 2014-06-20 | Centre Nat Rech Scient | Procede de fabrication d'un film comprenant des microstructures magnetiques tridimensionnelles |
| US9384773B2 (en) * | 2013-03-15 | 2016-07-05 | HGST Netherlands, B.V. | Annealing treatment for ion-implanted patterned media |
| KR102260263B1 (ko) | 2014-10-14 | 2021-06-02 | 엘지디스플레이 주식회사 | 터치 패널 및 터치 패널 일체형 유기 발광 표시 장치 |
| KR102299875B1 (ko) | 2014-11-07 | 2021-09-07 | 엘지디스플레이 주식회사 | 터치 패널, 이의 제조 방법 및 터치 패널 일체형 유기 발광 표시 장치 |
| KR20170012798A (ko) * | 2015-07-24 | 2017-02-03 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
Citations (6)
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| TW234759B (enExample) * | 1992-07-28 | 1994-11-21 | Johnson Matthey Plc | |
| TW275123B (enExample) * | 1994-01-31 | 1996-05-01 | Tera Store Inc | |
| US6153281A (en) * | 1996-02-20 | 2000-11-28 | Seagate Technology Llc | Magnetic media with permanently defined non-magnetic tracks and servo-patterns |
| US6168845B1 (en) * | 1999-01-19 | 2001-01-02 | International Business Machines Corporation | Patterned magnetic media and method of making the same using selective oxidation |
| US6571729B2 (en) * | 1999-07-28 | 2003-06-03 | Anelva Corporation | Apparatus for depositing a thin film on a data recording disk |
| US20060222898A1 (en) * | 2005-04-05 | 2006-10-05 | Canon Kabushiki Kaisha | Magnetic recording medium and production method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0356668A (ja) * | 1989-07-24 | 1991-03-12 | Ricoh Co Ltd | スパッター装置 |
| JPH0636362A (ja) * | 1992-07-14 | 1994-02-10 | Kuraray Co Ltd | 光情報記録媒体の製造方法 |
| JPH06104172A (ja) * | 1992-09-18 | 1994-04-15 | Fujitsu Ltd | 薄膜パターンの形成方法 |
| JP2000298825A (ja) * | 1999-04-12 | 2000-10-24 | Sony Corp | 磁気記録媒体およびその製造方法 |
| JP4560693B2 (ja) * | 1999-05-27 | 2010-10-13 | ソニー株式会社 | 表面処理装置および表面処理方法 |
| KR20000075388A (ko) * | 1999-05-27 | 2000-12-15 | 이데이 노부유끼 | 표면 처리 장치 및 표면 처리 방법 |
| JP2001250217A (ja) * | 2000-03-07 | 2001-09-14 | Hitachi Maxell Ltd | 情報記録媒体及びその製造方法 |
| JP2002288813A (ja) * | 2001-03-26 | 2002-10-04 | Fuji Electric Co Ltd | 磁気記録媒体およびその製造方法 |
| JP3886802B2 (ja) * | 2001-03-30 | 2007-02-28 | 株式会社東芝 | 磁性体のパターニング方法、磁気記録媒体、磁気ランダムアクセスメモリ |
| SG122746A1 (en) * | 2001-10-01 | 2006-06-29 | Inst Data Storage | Method of magnetically patterning a thin film by mask-controlled local phase transition |
| US6849349B2 (en) * | 2001-10-22 | 2005-02-01 | Carnegie Mellon University | Magnetic films having magnetic and non-magnetic regions and method of producing such films by ion irradiation |
| US6849558B2 (en) * | 2002-05-22 | 2005-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Replication and transfer of microstructures and nanostructures |
| US7611911B2 (en) * | 2003-10-08 | 2009-11-03 | International Business Machines Corporation | Method and system for patterning of magnetic thin films using gaseous transformation to transform a magnetic portion to a non-magnetic portion |
| JP2005158095A (ja) * | 2003-11-20 | 2005-06-16 | Matsushita Electric Ind Co Ltd | マスター情報担体の製造方法 |
| US20050211264A1 (en) * | 2004-03-25 | 2005-09-29 | Tokyo Electron Limited Of Tbs Broadcast Center | Method and processing system for plasma-enhanced cleaning of system components |
| JP4145305B2 (ja) * | 2005-01-13 | 2008-09-03 | 光洋サーモシステム株式会社 | 熱処理装置およびその使用方法 |
| JP2006309841A (ja) * | 2005-04-27 | 2006-11-09 | Tdk Corp | 磁性パターン形成方法、磁気記録媒体、磁気記録再生装置 |
| US7323401B2 (en) * | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
| JP2007115323A (ja) * | 2005-10-19 | 2007-05-10 | Sony Corp | 磁気ディスクの製造方法 |
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| JP2008052860A (ja) * | 2006-08-28 | 2008-03-06 | Showa Denko Kk | 磁気記録媒体の製造方法、及び磁気記録再生装置 |
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2009
- 2009-10-15 WO PCT/US2009/060868 patent/WO2010048030A2/en not_active Ceased
- 2009-10-15 CN CN200980142620.6A patent/CN102197426B/zh not_active Expired - Fee Related
- 2009-10-15 KR KR1020117011703A patent/KR101622568B1/ko not_active Expired - Fee Related
- 2009-10-15 JP JP2011533240A patent/JP5640011B2/ja not_active Expired - Fee Related
- 2009-10-15 CN CN201410246897.6A patent/CN103996404B/zh not_active Expired - Fee Related
- 2009-10-21 TW TW098135648A patent/TWI478159B/zh not_active IP Right Cessation
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2014
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| TW234759B (enExample) * | 1992-07-28 | 1994-11-21 | Johnson Matthey Plc | |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2014209404A (ja) | 2014-11-06 |
| WO2010048030A4 (en) | 2010-09-02 |
| WO2010048030A3 (en) | 2010-07-22 |
| KR20110090943A (ko) | 2011-08-10 |
| CN103996404A (zh) | 2014-08-20 |
| WO2010048030A2 (en) | 2010-04-29 |
| JP5640011B2 (ja) | 2014-12-10 |
| CN102197426B (zh) | 2014-11-05 |
| JP5863882B2 (ja) | 2016-02-17 |
| CN103996404B (zh) | 2017-08-04 |
| CN102197426A (zh) | 2011-09-21 |
| JP2012506601A (ja) | 2012-03-15 |
| TW201029003A (en) | 2010-08-01 |
| KR101622568B1 (ko) | 2016-05-19 |
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