JP5632598B2 - 発振回路及び発振器 - Google Patents

発振回路及び発振器 Download PDF

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Publication number
JP5632598B2
JP5632598B2 JP2009205671A JP2009205671A JP5632598B2 JP 5632598 B2 JP5632598 B2 JP 5632598B2 JP 2009205671 A JP2009205671 A JP 2009205671A JP 2009205671 A JP2009205671 A JP 2009205671A JP 5632598 B2 JP5632598 B2 JP 5632598B2
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JP
Japan
Prior art keywords
oscillation
circuit
adjusting
oscillation circuit
resistance element
Prior art date
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Expired - Fee Related
Application number
JP2009205671A
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English (en)
Japanese (ja)
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JP2011061274A5 (enExample
JP2011061274A (ja
Inventor
泰史 小山
泰史 小山
亮太 関口
亮太 関口
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009205671A priority Critical patent/JP5632598B2/ja
Priority to US13/384,758 priority patent/US8896389B2/en
Priority to EP10750189A priority patent/EP2476206A1/en
Priority to PCT/JP2010/064037 priority patent/WO2011027672A1/en
Priority to CN201080039654.5A priority patent/CN102714485B/zh
Publication of JP2011061274A publication Critical patent/JP2011061274A/ja
Publication of JP2011061274A5 publication Critical patent/JP2011061274A5/ja
Application granted granted Critical
Publication of JP5632598B2 publication Critical patent/JP5632598B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode

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  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
JP2009205671A 2009-09-07 2009-09-07 発振回路及び発振器 Expired - Fee Related JP5632598B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009205671A JP5632598B2 (ja) 2009-09-07 2009-09-07 発振回路及び発振器
US13/384,758 US8896389B2 (en) 2009-09-07 2010-08-13 Oscillation circuit having negative resistance element and oscillator using the oscillation circuit
EP10750189A EP2476206A1 (en) 2009-09-07 2010-08-13 Oscillation circuit having negative differential resistance element and oscillator using the oscillation circuit
PCT/JP2010/064037 WO2011027672A1 (en) 2009-09-07 2010-08-13 Oscillation circuit having negative differential resistance element and oscillator using the oscillation circuit
CN201080039654.5A CN102714485B (zh) 2009-09-07 2010-08-13 具有负微分电阻元件的振荡电路和使用振荡电路的振荡器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009205671A JP5632598B2 (ja) 2009-09-07 2009-09-07 発振回路及び発振器

Publications (3)

Publication Number Publication Date
JP2011061274A JP2011061274A (ja) 2011-03-24
JP2011061274A5 JP2011061274A5 (enExample) 2012-10-25
JP5632598B2 true JP5632598B2 (ja) 2014-11-26

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ID=43127614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009205671A Expired - Fee Related JP5632598B2 (ja) 2009-09-07 2009-09-07 発振回路及び発振器

Country Status (5)

Country Link
US (1) US8896389B2 (enExample)
EP (1) EP2476206A1 (enExample)
JP (1) JP5632598B2 (enExample)
CN (1) CN102714485B (enExample)
WO (1) WO2011027672A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5808560B2 (ja) * 2011-04-01 2015-11-10 ローム株式会社 テラヘルツ発振検出素子
KR101773997B1 (ko) * 2011-05-30 2017-09-01 아코니어 에이비 송수신기 모듈
JP6099114B2 (ja) * 2011-06-14 2017-03-22 ローム株式会社 無線伝送装置
JP6280310B2 (ja) 2012-06-06 2018-02-14 キヤノン株式会社 発振器
US8816787B2 (en) 2012-07-18 2014-08-26 International Business Machines Corporation High frequency oscillator circuit and method to operate same
US9276524B2 (en) 2012-07-18 2016-03-01 International Business Machines Corporation High frequency oscillator circuit
US9088243B2 (en) * 2012-09-10 2015-07-21 Indian Institute Of Technology Bombay Magnetic field feedback based spintronic oscillator
JP6100024B2 (ja) * 2013-02-27 2017-03-22 キヤノン株式会社 発振素子
JP6373010B2 (ja) 2013-03-12 2018-08-15 キヤノン株式会社 発振素子
JP2014207654A (ja) 2013-03-16 2014-10-30 キヤノン株式会社 導波路素子
JP6282041B2 (ja) * 2013-03-29 2018-02-21 キヤノン株式会社 発振器
JP6562645B2 (ja) * 2014-02-28 2019-08-21 キヤノン株式会社 発振素子、及びこれを用いた発振器
JP6682185B2 (ja) * 2014-02-28 2020-04-15 キヤノン株式会社 素子
JP6870135B2 (ja) * 2014-02-28 2021-05-12 キヤノン株式会社 素子
US9899959B2 (en) 2015-05-22 2018-02-20 Canon Kabushiki Kaisha Element, and oscillator and information acquiring device including the element
CN107578791B (zh) * 2016-07-04 2020-05-22 中国科学院物理研究所 具有高输出功率的自旋转矩振荡器及其应用
US10170603B2 (en) * 2016-08-08 2019-01-01 Atomera Incorporated Semiconductor device including a resonant tunneling diode structure with electron mean free path control layers
CN108566164B (zh) * 2018-06-27 2024-05-28 深圳市太赫兹科技创新研究院 一种基于共振遂穿二极管的太赫兹振荡电路及振荡器
WO2020000258A1 (zh) * 2018-06-27 2020-01-02 深圳市太赫兹科技创新研究院 一种基于共振遂穿二极管的太赫兹振荡电路及振荡器
JP7516009B2 (ja) * 2019-02-20 2024-07-16 キヤノン株式会社 発振器、撮像装置
JP7395281B2 (ja) 2019-08-23 2023-12-11 キヤノン株式会社 素子
JP7493922B2 (ja) * 2019-08-26 2024-06-03 キヤノン株式会社 発振器、撮像装置
JP7414428B2 (ja) * 2019-08-26 2024-01-16 キヤノン株式会社 発振器、照明装置、撮像装置および装置
JP7317653B2 (ja) 2019-09-24 2023-07-31 キヤノン株式会社 素子

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3081436A (en) 1959-12-15 1963-03-12 Gen Electric Negative resistance diode oscillator
US3237123A (en) 1961-08-08 1966-02-22 Gen Electric Electromechanical oscillator apparatus
DE1186519B (de) 1962-01-13 1965-02-04 Telefunken Patent Oszillator mit Tunnel-Diode, insbesondere fuer Fernsehempfaenger
US5539761A (en) * 1994-05-24 1996-07-23 Yissum Research Development Company Of The Hebrew University Of Jerusalem Resonant tunneling oscillators
JP4250573B2 (ja) 2004-07-16 2009-04-08 キヤノン株式会社 素子
JP4390147B2 (ja) 2005-03-28 2009-12-24 キヤノン株式会社 周波数可変発振器
JP4250603B2 (ja) 2005-03-28 2009-04-08 キヤノン株式会社 テラヘルツ波の発生素子、及びその製造方法
JP4713939B2 (ja) * 2005-05-19 2011-06-29 ルネサスエレクトロニクス株式会社 電圧制御発振器及びそれを用いた無線通信機
JP2007124250A (ja) * 2005-10-27 2007-05-17 Tokyo Institute Of Technology テラヘルツ発振素子
JP4481946B2 (ja) 2006-03-17 2010-06-16 キヤノン株式会社 検出素子及び画像形成装置
JP5028068B2 (ja) * 2006-05-31 2012-09-19 キヤノン株式会社 アクティブアンテナ発振器
JP5196750B2 (ja) 2006-08-25 2013-05-15 キヤノン株式会社 発振素子
JP4873746B2 (ja) 2006-12-21 2012-02-08 キヤノン株式会社 発振素子
FI20075292A0 (fi) * 2007-04-26 2007-04-26 Nokia Corp Oskillaattorisignaalin stabilisointi
US7869036B2 (en) 2007-08-31 2011-01-11 Canon Kabushiki Kaisha Analysis apparatus for analyzing a specimen by obtaining electromagnetic spectrum information
JP5171539B2 (ja) 2007-11-29 2013-03-27 キヤノン株式会社 共鳴トンネル構造体
JP5506258B2 (ja) 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
JP5563356B2 (ja) 2010-04-12 2014-07-30 キヤノン株式会社 電磁波検出素子

Also Published As

Publication number Publication date
US20120119838A1 (en) 2012-05-17
EP2476206A1 (en) 2012-07-18
CN102714485A (zh) 2012-10-03
JP2011061274A (ja) 2011-03-24
WO2011027672A1 (en) 2011-03-10
CN102714485B (zh) 2015-01-28
US8896389B2 (en) 2014-11-25

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