JP5624616B2 - オキシオルトシリケート発光体を有する発光物質を用いる発光装置 - Google Patents
オキシオルトシリケート発光体を有する発光物質を用いる発光装置 Download PDFInfo
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- JP5624616B2 JP5624616B2 JP2012517369A JP2012517369A JP5624616B2 JP 5624616 B2 JP5624616 B2 JP 5624616B2 JP 2012517369 A JP2012517369 A JP 2012517369A JP 2012517369 A JP2012517369 A JP 2012517369A JP 5624616 B2 JP5624616 B2 JP 5624616B2
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- 239000000463 material Substances 0.000 title claims description 103
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 25
- 150000002910 rare earth metals Chemical class 0.000 claims description 24
- 239000006104 solid solution Substances 0.000 claims description 19
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 18
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 17
- -1 rare earth metal ion Chemical class 0.000 claims description 17
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 15
- 238000000465 moulding Methods 0.000 claims description 13
- 229910052727 yttrium Inorganic materials 0.000 claims description 13
- 239000011575 calcium Substances 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 229910052746 lanthanum Inorganic materials 0.000 claims description 11
- 229910021645 metal ion Inorganic materials 0.000 claims description 11
- 239000011777 magnesium Substances 0.000 claims description 10
- 239000011572 manganese Substances 0.000 claims description 10
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 10
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 5
- 239000012190 activator Substances 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 3
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 3
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical group [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 3
- 229910001422 barium ion Inorganic materials 0.000 claims 1
- 229910001427 strontium ion Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 14
- 230000005855 radiation Effects 0.000 description 13
- 239000002585 base Substances 0.000 description 10
- 239000012071 phase Substances 0.000 description 10
- 229910052712 strontium Inorganic materials 0.000 description 10
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000001354 calcination Methods 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001341 alkaline earth metal compounds Chemical group 0.000 description 1
- 229910001618 alkaline earth metal fluoride Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 150000002909 rare earth metal compounds Chemical class 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000008247 solid mixture Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/77922—Silicates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
Description
Claims (19)
- 発光ダイオード;及び
前記発光ダイオードの周囲に配置され、前記発光ダイオードから放出された光の少なくとも一部を吸収し、吸収光とは異なる波長の光を放出する発光物質を含み、
前記発光物質は、アルカリ土類金属オキシオルトシリケートと稀土類金属オキシオルトシリケートとの間の混合相形態の固溶体が発光を起こすEu2+活性に対する格子ベースとして用いられるEu2+―ドーピングケイ酸塩発光体を含み、
前記発光体は、化学式(1−x)M II 3 SiO 5 ・xSE 2 SiO 5 :Euで表わされ、
ここで、前記M II は、2価金属イオンを示し、ストロンチウムイオン及びバリウムイオンからなる群より選ばれる少なくとも一つを含み、前記SEは稀土類金属を示すことを特徴とする発光装置。 - 前記MIIは、マグネシウム(Mg)、カルシウム(Ca)、銅(Cu)、亜鉛(Zn)及びマンガン(Mn)からなる群より選ばれる少なくとも一つの2価金属イオンをさらに含むことを特徴とする、請求項1に記載の発光装置。
- 前記発光体において、マグネシウム(Mg)、カルシウム(Ca)、銅(Cu)、亜鉛(Zn)及びマンガン(Mn)からなる群より選ばれる少なくとも一つの2価金属イオンの比率は最大0.5であることを特徴とする、請求項2に記載の発光装置。
- 前記稀土類金属は、イットリウム(Y)、ランタン(La)及び原子番号58から71のランタン族からなる群より選ばれる少なくとも一つの3価金属イオンを含む、請求項1に記載の発光装置。
- 前記稀土類金属は、イットリウム(Y)、ランタン(La)、ガドリニウム(Gd)及びルテチウム(Ru)元素からなる群より選ばれる少なくとも一つの3価金属イオンを含む、請求項1に記載の発光装置。
- 前記発光体は、活性剤として、ユーロピウム(Eu)に加えて、2価稀土類金属イオン又は3価稀土類金属イオンをさらに含む、請求項1に記載の発光装置。
- 前記2価稀土類金属イオン活性剤は、サマリウム又はイットリウムイオンである、請求項6に記載の発光装置。
- 前記3価稀土類金属イオン活性剤は、セリウムイオン(Ce3+)である、請求項6に記載の発光装置。
- 発光ダイオード;及び
前記発光ダイオードの周囲に配置され、前記発光ダイオードから放出された光の少なくとも一部を吸収し、吸収光とは異なる波長の光を放出する発光物質を含み、
前記発光物質は、アルカリ土類金属オキシオルトシリケートと稀土類金属オキシオルトシリケートとの間の混合相形態の固溶体が発光を起こすEu 2+ 活性に対する格子ベースとして用いられるEu 2+ ―ドーピングケイ酸塩発光体を含み、
前記発光体は、化学式(1−x)(Sr3−a−b−zBaaCabMII cEuz)SiO5・xSE2SiO5で表わされ、
ここで、前記MIIは、マグネシウム(Mg)、銅(Cu)、亜鉛(Zn)及びマンガン(Mn)からなる群より選ばれる少なくとも一つで、
前記SEは、イットリウム(Y)、ランタン(La)及び原子番号58から71のランタン族からなる群より選ばれる元素で、
x≦0.2、
0≦a≦3、0≦b≦0.05、0≦c≦0.05及び
z≦0.25であることを特徴とする発光装置。 - x≦0.1である、請求項9に記載の発光装置。
- 前記発光ダイオードから放出された光と前記発光物質から放出された光との混合によって白色光又は所望の色の光が実現される、請求項1又は請求項9に記載の発光装置。
- 前記発光物質は、略560nmから略620nmの間に発光ピーク波長を有する光を放出する、請求項1又は請求項9に記載の発光装置。
- 前記発光ダイオード及び前記発光物質は一つのパッケージ内に形成されている、請求項1又は請求項9に記載の発光装置。
- 前記パッケージ内に形成された他の発光ダイオードをさらに含み、前記他の発光ダイオードは、前記発光物質の発光ピーク波長より長波長の光を放出する、請求項13に記載の発光装置。
- 前記パッケージは基板を含み、
前記発光ダイオードは前記基板の上に実装される、請求項13に記載の発光装置。 - 前記基板は印刷回路基板又はリードフレームを含む、請求項15に記載の発光装置。
- 前記基板の上で前記発光ダイオードを封止するモールディング部材をさらに含み、
前記発光物質は前記モールディング部材内に分布されている、請求項16に記載の発光装置。 - 前記パッケージはヒートシンクを含み、
前記発光ダイオードは前記ヒートシンクの上に実装される、請求項13に記載の発光装置。 - 前記発光ダイオードは、複数の発光セルを有する発光ダイオードである、請求項1又は請求項9に記載の発光装置。
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DE102009030205A DE102009030205A1 (de) | 2009-06-24 | 2009-06-24 | Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore |
DE102009030205.0 | 2009-06-24 | ||
KR1020090081949A KR101055762B1 (ko) | 2009-09-01 | 2009-09-01 | 옥시오소실리케이트 발광체를 갖는 발광 물질을 채택한 발광 장치 |
KR10-2009-0081949 | 2009-09-01 | ||
PCT/KR2010/003302 WO2011004961A2 (en) | 2009-06-24 | 2010-05-26 | Light emitting device employing luminescent substances with oxyorthosilicate luminophores |
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CN103013503A (zh) * | 2012-12-22 | 2013-04-03 | 广州有色金属研究院 | 一种硅酸盐荧光材料 |
RU2644465C1 (ru) * | 2017-03-14 | 2018-02-12 | Общество с ограниченной ответственностью "Монокристалл Пасты" | Способ получения мелкодисперсного красного люминесцентного материала для создания результирующего белого света в светодиодах |
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TWI250664B (en) * | 2004-01-30 | 2006-03-01 | South Epitaxy Corp | White light LED |
FR2869159B1 (fr) * | 2004-04-16 | 2006-06-16 | Rhodia Chimie Sa | Diode electroluminescente emettant une lumiere blanche |
US7601276B2 (en) * | 2004-08-04 | 2009-10-13 | Intematix Corporation | Two-phase silicate-based yellow phosphor |
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RU2313157C1 (ru) * | 2006-06-09 | 2007-12-20 | Институт проблем технологии микроэлектроники и особочистых материалов Российской Академии Наук (ИПТМ РАН) | Способ получения видимого света и люминесцентные источники на его основе (варианты) |
JP3964449B1 (ja) | 2006-10-06 | 2007-08-22 | 根本特殊化学株式会社 | 橙色発光蛍光体 |
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WO2011004961A2 (en) | 2011-01-13 |
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