JP5622477B2 - 真空処理装置 - Google Patents

真空処理装置 Download PDF

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Publication number
JP5622477B2
JP5622477B2 JP2010178108A JP2010178108A JP5622477B2 JP 5622477 B2 JP5622477 B2 JP 5622477B2 JP 2010178108 A JP2010178108 A JP 2010178108A JP 2010178108 A JP2010178108 A JP 2010178108A JP 5622477 B2 JP5622477 B2 JP 5622477B2
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JP
Japan
Prior art keywords
ridge
substrate
electrode
heat absorption
temperature control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010178108A
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English (en)
Japanese (ja)
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JP2012038596A (ja
JP2012038596A5 (enExample
Inventor
笹川　英四郎
英四郎 笹川
竹内　良昭
良昭 竹内
宮園　直之
直之 宮園
大坪　栄一郎
栄一郎 大坪
禎子 中尾
禎子 中尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2010178108A priority Critical patent/JP5622477B2/ja
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to US13/703,694 priority patent/US20130084408A1/en
Priority to CN201180030847.9A priority patent/CN102959125B/zh
Priority to EP11814348.6A priority patent/EP2602356A1/en
Priority to PCT/JP2011/060625 priority patent/WO2012017717A1/ja
Priority to TW100118133A priority patent/TWI442458B/zh
Publication of JP2012038596A publication Critical patent/JP2012038596A/ja
Publication of JP2012038596A5 publication Critical patent/JP2012038596A5/ja
Application granted granted Critical
Publication of JP5622477B2 publication Critical patent/JP5622477B2/ja
Expired - Fee Related legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP2010178108A 2010-08-06 2010-08-06 真空処理装置 Expired - Fee Related JP5622477B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010178108A JP5622477B2 (ja) 2010-08-06 2010-08-06 真空処理装置
CN201180030847.9A CN102959125B (zh) 2010-08-06 2011-05-09 真空处理装置及等离子体处理方法
EP11814348.6A EP2602356A1 (en) 2010-08-06 2011-05-09 Vacuum processing apparatus and plasma processing method
PCT/JP2011/060625 WO2012017717A1 (ja) 2010-08-06 2011-05-09 真空処理装置及びプラズマ処理方法
US13/703,694 US20130084408A1 (en) 2010-08-06 2011-05-09 Vacuum processing apparatus and plasma processing method
TW100118133A TWI442458B (zh) 2010-08-06 2011-05-24 Vacuum processing device and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010178108A JP5622477B2 (ja) 2010-08-06 2010-08-06 真空処理装置

Publications (3)

Publication Number Publication Date
JP2012038596A JP2012038596A (ja) 2012-02-23
JP2012038596A5 JP2012038596A5 (enExample) 2013-08-29
JP5622477B2 true JP5622477B2 (ja) 2014-11-12

Family

ID=45850384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010178108A Expired - Fee Related JP5622477B2 (ja) 2010-08-06 2010-08-06 真空処理装置

Country Status (1)

Country Link
JP (1) JP5622477B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6134522B2 (ja) * 2013-01-30 2017-05-24 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP6285411B2 (ja) * 2015-12-25 2018-02-28 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3912569A1 (de) * 1989-04-17 1990-10-18 Siemens Ag Verfahren und vorrichtung zur erzeugung eines elektrischen hochfrequenzfeldes in einem nutzraum
JP3249356B2 (ja) * 1995-10-26 2002-01-21 三菱重工業株式会社 プラズマ化学蒸着装置
DE19540543A1 (de) * 1995-10-31 1997-05-07 Leybold Ag Vorrichtung zum Beschichten eines Substrats mit Hilfe des Chemical-Vapor-Deposition-Verfahrens
JP4082720B2 (ja) * 2001-09-10 2008-04-30 キヤノンアネルバ株式会社 基板表面処理装置
JP2007221156A (ja) * 2003-10-22 2007-08-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2006019593A (ja) * 2004-07-02 2006-01-19 Mitsubishi Heavy Ind Ltd アモルファス太陽電池の成膜装置、及び、その製造方法
JP4859472B2 (ja) * 2006-02-08 2012-01-25 独立行政法人物質・材料研究機構 プラズマプロセス装置

Also Published As

Publication number Publication date
JP2012038596A (ja) 2012-02-23

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