JP5611246B2 - オプトエレクトロニクス半導体部品 - Google Patents

オプトエレクトロニクス半導体部品 Download PDF

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Publication number
JP5611246B2
JP5611246B2 JP2011553292A JP2011553292A JP5611246B2 JP 5611246 B2 JP5611246 B2 JP 5611246B2 JP 2011553292 A JP2011553292 A JP 2011553292A JP 2011553292 A JP2011553292 A JP 2011553292A JP 5611246 B2 JP5611246 B2 JP 5611246B2
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JP
Japan
Prior art keywords
carrier
optoelectronic semiconductor
hole
semiconductor component
housing body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2011553292A
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English (en)
Japanese (ja)
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JP2012519973A (ja
JP2012519973A5 (OSRAM
Inventor
ツィツルスペルガー ミヒャエル
ツィツルスペルガー ミヒャエル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2012519973A publication Critical patent/JP2012519973A/ja
Publication of JP2012519973A5 publication Critical patent/JP2012519973A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
JP2011553292A 2009-03-10 2009-12-23 オプトエレクトロニクス半導体部品 Expired - Fee Related JP5611246B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009012517A DE102009012517A1 (de) 2009-03-10 2009-03-10 Optoelektronisches Halbleiterbauelement
DE102009012517.5 2009-03-10
PCT/EP2009/067890 WO2010102685A1 (de) 2009-03-10 2009-12-23 Optoelektronisches halbleiterbauelement

Publications (3)

Publication Number Publication Date
JP2012519973A JP2012519973A (ja) 2012-08-30
JP2012519973A5 JP2012519973A5 (OSRAM) 2012-12-20
JP5611246B2 true JP5611246B2 (ja) 2014-10-22

Family

ID=42026742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011553292A Expired - Fee Related JP5611246B2 (ja) 2009-03-10 2009-12-23 オプトエレクトロニクス半導体部品

Country Status (8)

Country Link
US (1) US8946756B2 (OSRAM)
EP (1) EP2406827A1 (OSRAM)
JP (1) JP5611246B2 (OSRAM)
KR (1) KR101712220B1 (OSRAM)
CN (2) CN102349160B (OSRAM)
DE (1) DE102009012517A1 (OSRAM)
TW (2) TWI489660B (OSRAM)
WO (1) WO2010102685A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102025408B1 (ko) * 2019-05-14 2019-09-25 박동순 양면 대칭 기반의 투명 led 디스플레이 장치의 제조방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010047156A1 (de) * 2010-09-30 2012-04-05 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
CN104160522B (zh) 2012-03-06 2017-12-22 飞利浦灯具控股公司 发光模块和制造发光模块的方法
JP7177326B2 (ja) * 2016-01-29 2022-11-24 日亜化学工業株式会社 発光装置及び発光装置の製造方法
JP7231846B2 (ja) * 2020-11-30 2023-03-02 日亜化学工業株式会社 発光装置の製造方法

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US6281568B1 (en) * 1998-10-21 2001-08-28 Amkor Technology, Inc. Plastic integrated circuit device package and leadframe having partially undercut leads and die pad
JP3784976B2 (ja) * 1998-12-22 2006-06-14 ローム株式会社 半導体装置
JP2000322740A (ja) * 1999-05-12 2000-11-24 Ricoh Co Ltd 光記録媒体及びその記録方法
JP2001127210A (ja) * 1999-10-29 2001-05-11 Hitachi Ltd 自動車用電子回路装置
JP2001168359A (ja) 1999-12-10 2001-06-22 Fuji Photo Film Co Ltd 光電変換素子および光電池
JP3614776B2 (ja) * 2000-12-19 2005-01-26 シャープ株式会社 チップ部品型ｌｅｄとその製造方法
KR200299491Y1 (ko) 2002-09-02 2003-01-03 코리아옵토 주식회사 표면실장형 발광다이오드
TWI237546B (en) * 2003-01-30 2005-08-01 Osram Opto Semiconductors Gmbh Semiconductor-component sending and/or receiving electromagnetic radiation and housing-basebody for such a component
US6841934B2 (en) * 2003-02-26 2005-01-11 Harvatek Corporation White light source from light emitting diode
JP2005159296A (ja) 2003-11-06 2005-06-16 Sharp Corp オプトデバイスのパッケージ構造
US7183588B2 (en) * 2004-01-08 2007-02-27 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light emission device
CN1898808A (zh) * 2004-02-06 2007-01-17 班斯集团公司 引线框上包覆成型的透镜和引线框上包覆成型透镜的方法
US7053469B2 (en) * 2004-03-30 2006-05-30 Advanced Semiconductor Engineering, Inc. Leadless semiconductor package and manufacturing method thereof
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
CN1684278A (zh) * 2004-04-15 2005-10-19 联欣光电股份有限公司 一种发光二极管的封装结构及其封装方法
JP4359195B2 (ja) * 2004-06-11 2009-11-04 株式会社東芝 半導体発光装置及びその製造方法並びに半導体発光ユニット
JP2006114832A (ja) * 2004-10-18 2006-04-27 Sharp Corp 面実装型半導体素子
DE102004057804B4 (de) * 2004-11-30 2010-04-08 Osram Opto Semiconductors Gmbh Gehäusekörper für einen Halbleiterchip aus gegossener Keramik mit reflektierender Wirkung und Verfahren zu dessen Herstellung
JP2006237190A (ja) * 2005-02-24 2006-09-07 Toshiba Discrete Technology Kk 半導体発光装置
JP2007027433A (ja) * 2005-07-15 2007-02-01 Mitsubishi Cable Ind Ltd 発光装置
US7646035B2 (en) * 2006-05-31 2010-01-12 Cree, Inc. Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices
JP5068472B2 (ja) 2006-04-12 2012-11-07 昭和電工株式会社 発光装置の製造方法
US7960819B2 (en) * 2006-07-13 2011-06-14 Cree, Inc. Leadframe-based packages for solid state emitting devices
JP5205724B2 (ja) * 2006-08-04 2013-06-05 日亜化学工業株式会社 発光装置
JP4822980B2 (ja) * 2006-08-11 2011-11-24 京セラ株式会社 電子部品搭載用基板および電子装置、ならびに電子装置の製造方法
JP2008244151A (ja) * 2007-03-27 2008-10-09 Toyoda Gosei Co Ltd 発光装置
JP2008244143A (ja) * 2007-03-27 2008-10-09 Toshiba Corp 半導体発光装置の製造方法
JP5453713B2 (ja) * 2007-07-06 2014-03-26 日亜化学工業株式会社 半導体装置およびその形成方法
KR100888236B1 (ko) * 2008-11-18 2009-03-12 서울반도체 주식회사 발광 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102025408B1 (ko) * 2019-05-14 2019-09-25 박동순 양면 대칭 기반의 투명 led 디스플레이 장치의 제조방법

Also Published As

Publication number Publication date
TWI580081B (zh) 2017-04-21
CN102349160A (zh) 2012-02-08
KR101712220B1 (ko) 2017-03-03
TW201532318A (zh) 2015-08-16
CN103928593A (zh) 2014-07-16
JP2012519973A (ja) 2012-08-30
EP2406827A1 (de) 2012-01-18
US8946756B2 (en) 2015-02-03
CN102349160B (zh) 2014-05-07
DE102009012517A1 (de) 2010-09-16
TWI489660B (zh) 2015-06-21
US20120119250A1 (en) 2012-05-17
KR20110137348A (ko) 2011-12-22
TW201112457A (en) 2011-04-01
WO2010102685A1 (de) 2010-09-16

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