JP5584155B2 - 半導体メモリ - Google Patents
半導体メモリ Download PDFInfo
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- JP5584155B2 JP5584155B2 JP2011058316A JP2011058316A JP5584155B2 JP 5584155 B2 JP5584155 B2 JP 5584155B2 JP 2011058316 A JP2011058316 A JP 2011058316A JP 2011058316 A JP2011058316 A JP 2011058316A JP 5584155 B2 JP5584155 B2 JP 5584155B2
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- insulating film
- tunnel insulating
- particle layer
- semiconductor memory
- fine particles
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- 239000004065 semiconductor Substances 0.000 title claims description 126
- 239000010419 fine particle Substances 0.000 claims description 225
- 239000002245 particle Substances 0.000 claims description 77
- 238000003860 storage Methods 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 22
- 101150008866 Tox3 gene Proteins 0.000 claims description 3
- 230000005684 electric field Effects 0.000 description 48
- 229910021417 amorphous silicon Inorganic materials 0.000 description 40
- 230000004888 barrier function Effects 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 229910052710 silicon Inorganic materials 0.000 description 31
- 239000010703 silicon Substances 0.000 description 31
- 230000014759 maintenance of location Effects 0.000 description 23
- 238000010586 diagram Methods 0.000 description 21
- 230000000694 effects Effects 0.000 description 19
- 239000013081 microcrystal Substances 0.000 description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000000137 annealing Methods 0.000 description 8
- 239000002159 nanocrystal Substances 0.000 description 8
- 239000012299 nitrogen atmosphere Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- -1 Metal Oxide Nitride Chemical class 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011370 conductive nanoparticle Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/06—Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals
Description
(第1の実施形態)
(第2の実施形態)
(第3の実施形態)
(条件の説明)
(第4の実施形態)
上記した実施形態では、半導体基板としてシリコンを用いているが、他の半導体を用いても良い。上記した実施形態では、トンネル絶縁膜にSi酸化膜を用いているが、他の絶縁材料でも同等の効果を有する。上記した実施形態では、電荷蓄積部にシリコン窒化膜又はn+ポリシリコンを用いているが、他のキャリアトラップを多く含むトラップ層材料又は他の電極材料を用いても良い。但し、電荷蓄積部は、トンネル絶縁膜中の何れの微粒子層よりもエネルギー的に低い順位であることが望ましい。電荷蓄積部のエネルギー準位が微粒子層よりも高いと、相対的エネルギー差が変化し電荷保持に不利になるために十分な効果が得られない。上記した実施形態では、ブロック絶縁膜にSi酸化膜を用いているが他の絶縁膜材料を用いてもよい。
Claims (9)
- 半導体基板のチャネル領域上に形成された第1のトンネル絶縁膜と、
前記第1のトンネル絶縁膜上に形成されクーロンブロッケイド条件を満たす第1の導電性微粒子を含む第1の微粒子層と、
前記第1の微粒子層上に形成された第2のトンネル絶縁膜と、
前記第2のトンネル絶縁膜上に形成されクーロンブロッケイド条件を満たし、前記第1の導電性微粒子の平均粒径よりも大きな平均粒径を有する第2の導電性微粒子を含む第2の微粒子層と、
前記第2の微粒子層上に形成された第3のトンネル絶縁膜と、
前記第3のトンネル絶縁膜上に形成されクーロンブロッケイド条件を満たし、前記第2の導電性微粒子の平均粒径よりも小さな平均粒径を有する第3の導電性微粒子を含む第3の微粒子層と、
前記第3の微粒子層上に形成された第4のトンネル絶縁膜と、
前記第4のトンネル絶縁膜上に形成された電荷蓄積膜と、
前記電荷蓄積膜上に形成されたブロック絶縁膜と、
前記ブロック絶縁膜上に形成されたゲート電極と、
を備え、
前記第2の微粒子層で電子1個の帯電に必要な平均エネルギーをΔE 1 、前記第1の微粒子層で電子1個の帯電に必要な平均エネルギーをΔE、前記第3の微粒子層で電子1個の帯電に必要な平均エネルギーをΔE 2 、ボルツマン定数をk B 、温度をT(K)として、
min(ΔE、ΔE 2 )−ΔE 1 >k B T
を満たす半導体メモリ。 - min(ΔE、ΔE2)−ΔE1>0.1eV、又はmin(ΔE、ΔE2)−ΔE1>0.2eV
を満たす請求項1に記載の半導体メモリ。 - 前記ΔE 1 及びΔE 2 が、素電荷をq、前記第3のトンネル絶縁膜の膜厚をTox3[nm]として、
5[MV/cm]≦(ΔE2−ΔE1)/(q・Tox3)≦8[MV/cm]
を満たす請求項1又は請求項2に記載の半導体メモリ。 - 前記ΔE 1 及びΔE 2 が、素電荷をq、前記第3のトンネル絶縁膜の膜厚をTox3[nm]として、
5[MV/cm]≦(ΔE2−ΔE1)/(q・Tox3)
を満たす請求項1又は請求項2に記載の半導体メモリ。 - 半導体基板のチャネル領域上に形成された第1のトンネル絶縁膜と、
前記第1のトンネル絶縁膜上に形成されクーロンブロッケイド条件を満たす第1の導電性微粒子を含む第1の微粒子層と、
前記第1の微粒子層上に形成された第2のトンネル絶縁膜と、
前記第2のトンネル絶縁膜上に形成されクーロンブロッケイド条件を満たし、前記第1の導電性微粒子の平均粒径よりも大きな平均粒径を有する第2の導電性微粒子を含む第2の微粒子層と、
前記第2の微粒子層上に形成された第3のトンネル絶縁膜と、
前記第3のトンネル絶縁膜上に形成されクーロンブロッケイド条件を満たし、前記第2の導電性微粒子の平均粒径よりも小さな平均粒径を有する第3の導電性微粒子を含む第3の微粒子層と、
前記第3の微粒子層上に形成された第4のトンネル絶縁膜と、
前記第4のトンネル絶縁膜上に形成された電荷蓄積膜と、
前記電荷蓄積膜上に形成されたブロック絶縁膜と、
前記ブロック絶縁膜上に形成されたゲート電極と、
を備え、
前記第2の導電性微粒子の平均粒径d1[nm]、前記第1の導電性微粒子の平均粒径d[nm]、前記第3の導電性微粒子の平均粒径d2[nm]、及び前記第1乃至第4のトンネル絶縁膜の誘電率εが、ボルツマン定数をkB、温度をT(K)、素電荷をqとして、
d1>max(d、d2)/(1−kBT/[q/{2πε・max(d、d2)}])
の関係を満たす半導体メモリ。 - 前記d 1 [nm]、d[nm]、及びd 2 [nm]が、素電荷をqとして、
d1>max(d、d2)/(1−0.1eV/[q/{2πε・max(d、d2)}])又はd1>max(d、d2)/(1−0.2eV/[q/{2πε・max(d、d2)}])
の関係を満たす請求項5に記載の半導体メモリ。 - 前記第2のトンネル絶縁膜又は前記第3のトンネル絶縁膜は、膜厚が2nmのSi酸化膜よりもトンネル抵抗が低くなる厚さに形成されている請求項1乃至請求項6の何れか1項に記載の半導体メモリ。
- 前記第1の導電性微粒子、前記第2の導電性微粒子、及び前記第3の導電性微粒子がSiナノ微結晶からなる請求項1乃至請求項7の何れか1項に記載の半導体メモリ。
- 前記第1乃至前記第4のトンネル絶縁膜がSi酸化膜からなる請求項1乃至請求項8の何れか1項に記載の半導体メモリ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011058316A JP5584155B2 (ja) | 2011-03-16 | 2011-03-16 | 半導体メモリ |
US13/419,930 US8587050B2 (en) | 2011-03-16 | 2012-03-14 | Semiconductor memory |
KR1020120027125A KR101408585B1 (ko) | 2011-03-16 | 2012-03-16 | 반도체 메모리 |
CN201210069785.9A CN102683387B (zh) | 2011-03-16 | 2012-03-16 | 半导体存储器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011058316A JP5584155B2 (ja) | 2011-03-16 | 2011-03-16 | 半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012195451A JP2012195451A (ja) | 2012-10-11 |
JP5584155B2 true JP5584155B2 (ja) | 2014-09-03 |
Family
ID=46815058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011058316A Expired - Fee Related JP5584155B2 (ja) | 2011-03-16 | 2011-03-16 | 半導体メモリ |
Country Status (4)
Country | Link |
---|---|
US (1) | US8587050B2 (ja) |
JP (1) | JP5584155B2 (ja) |
KR (1) | KR101408585B1 (ja) |
CN (1) | CN102683387B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013077603A (ja) * | 2011-09-29 | 2013-04-25 | Toshiba Corp | メモリ装置 |
JP2013197269A (ja) * | 2012-03-19 | 2013-09-30 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8969843B2 (en) * | 2013-02-21 | 2015-03-03 | Kabushiki Kaisha Toshiba | Memory device |
US9425237B2 (en) | 2014-03-11 | 2016-08-23 | Crossbar, Inc. | Selector device for two-terminal memory |
US9768234B2 (en) | 2014-05-20 | 2017-09-19 | Crossbar, Inc. | Resistive memory architecture and devices |
US9633724B2 (en) | 2014-07-07 | 2017-04-25 | Crossbar, Inc. | Sensing a non-volatile memory device utilizing selector device holding characteristics |
US10211397B1 (en) | 2014-07-07 | 2019-02-19 | Crossbar, Inc. | Threshold voltage tuning for a volatile selection device |
US9460788B2 (en) | 2014-07-09 | 2016-10-04 | Crossbar, Inc. | Non-volatile memory cell utilizing volatile switching two terminal device and a MOS transistor |
US10115819B2 (en) | 2015-05-29 | 2018-10-30 | Crossbar, Inc. | Recessed high voltage metal oxide semiconductor transistor for RRAM cell |
US9685483B2 (en) | 2014-07-09 | 2017-06-20 | Crossbar, Inc. | Selector-based non-volatile cell fabrication utilizing IC-foundry compatible process |
US9698201B2 (en) | 2014-07-09 | 2017-07-04 | Crossbar, Inc. | High density selector-based non volatile memory cell and fabrication |
JP2017168708A (ja) * | 2016-03-17 | 2017-09-21 | 東芝メモリ株式会社 | 半導体記憶装置 |
US9721654B1 (en) * | 2016-03-18 | 2017-08-01 | Kabushiki Kaisha Toshiba | Memory device |
US10096362B1 (en) | 2017-03-24 | 2018-10-09 | Crossbar, Inc. | Switching block configuration bit comprising a non-volatile memory cell |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3512975B2 (ja) | 1997-03-14 | 2004-03-31 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP2003318293A (ja) | 1999-06-04 | 2003-11-07 | Matsushita Electric Ind Co Ltd | 半導体素子 |
JP2003347440A (ja) * | 1999-06-04 | 2003-12-05 | Matsushita Electric Ind Co Ltd | 半導体素子 |
US6548825B1 (en) * | 1999-06-04 | 2003-04-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device including barrier layer having dispersed particles |
JP3580781B2 (ja) * | 2001-03-28 | 2004-10-27 | 株式会社東芝 | 半導体記憶素子 |
JP3469212B2 (ja) * | 2001-03-28 | 2003-11-25 | 株式会社東芝 | 半導体記憶素子 |
JP4253473B2 (ja) | 2001-06-22 | 2009-04-15 | 株式会社東芝 | 半導体装置及びその製造方法 |
US7429767B2 (en) * | 2005-09-01 | 2008-09-30 | Micron Technology, Inc. | High performance multi-level non-volatile memory device |
TWI264797B (en) * | 2005-11-07 | 2006-10-21 | Ind Tech Res Inst | Self-alignment dual-layer silicon-metal nano-grain memory device, fabricating method thereof and memory containing the same |
KR100874944B1 (ko) | 2007-02-02 | 2008-12-19 | 삼성전자주식회사 | 반도체 메모리 소자 제조 방법 및 이에 따른 반도체 메모리소자 |
US7898850B2 (en) * | 2007-10-12 | 2011-03-01 | Micron Technology, Inc. | Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells |
US7759715B2 (en) * | 2007-10-15 | 2010-07-20 | Micron Technology, Inc. | Memory cell comprising dynamic random access memory (DRAM) nanoparticles and nonvolatile memory (NVM) nanoparticle |
JP5531252B2 (ja) * | 2009-03-04 | 2014-06-25 | 株式会社東芝 | 不揮発性半導体メモリ |
KR101337101B1 (ko) | 2009-09-25 | 2013-12-05 | 가부시끼가이샤 도시바 | 불휘발성 반도체 메모리 |
-
2011
- 2011-03-16 JP JP2011058316A patent/JP5584155B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-14 US US13/419,930 patent/US8587050B2/en active Active
- 2012-03-16 KR KR1020120027125A patent/KR101408585B1/ko not_active IP Right Cessation
- 2012-03-16 CN CN201210069785.9A patent/CN102683387B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20120235219A1 (en) | 2012-09-20 |
KR101408585B1 (ko) | 2014-06-17 |
CN102683387A (zh) | 2012-09-19 |
CN102683387B (zh) | 2015-03-04 |
KR20120106646A (ko) | 2012-09-26 |
JP2012195451A (ja) | 2012-10-11 |
US8587050B2 (en) | 2013-11-19 |
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