JP5583443B2 - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
- Publication number
- JP5583443B2 JP5583443B2 JP2010072293A JP2010072293A JP5583443B2 JP 5583443 B2 JP5583443 B2 JP 5583443B2 JP 2010072293 A JP2010072293 A JP 2010072293A JP 2010072293 A JP2010072293 A JP 2010072293A JP 5583443 B2 JP5583443 B2 JP 5583443B2
- Authority
- JP
- Japan
- Prior art keywords
- opening
- process tube
- boat
- workpiece
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 claims description 53
- 230000003028 elevating effect Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 10
- 229910010271 silicon carbide Inorganic materials 0.000 description 10
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Furnace Details (AREA)
Description
16−プロセスチューブ
18−マニホールド
20−ワーク
22−ボート
24−昇降アーム
26−昇降機構
222−底部
224−閉塞板
Claims (2)
- ワークを搬入および搬出するための開口部を有する有底筒状のプロセスチューブを備えた熱処理装置であって、
前記ワークを支持し、板状の底部を備えたボートと、
前記ボートを昇降させる昇降機構であって、前記ワークが前記プロセスチューブの内部に配置される第1の位置、および前記ワークが前記プロセスチューブの外部に配置される第2の位置を含む複数の位置にボールネジを介して片持ち支持した前記ボートを昇降させるように構成された昇降機構と、
を備え、
前記ボートは、上部に設けられ、かつ、前記開口部を通過可能に構成された閉塞板であって、前記第2の位置に配置された際に、前記開口部を塞ぐように前記開口部内に配置される閉塞板を備え、
前記底部は、前記開口部よりも大きい外径で、前記開口部の周囲に前記プロセスチューブの外部から当接するように構成し、
前記閉塞板は、前記開口部よりも直径が僅かに小さく、
前記開口部の内径は、前記プロセスチューブの内径よりも小さく、
前記閉塞板の上面は、前記ボートが前記第2の位置に配置された際に、前記開口部の上端と同一平面上に配置される熱処理装置。 - 前記閉塞板は、不透明部材で構成された請求項1に記載の熱処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010072293A JP5583443B2 (ja) | 2010-03-26 | 2010-03-26 | 熱処理装置 |
KR1020100109155A KR101745970B1 (ko) | 2010-03-26 | 2010-11-04 | 열처리장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010072293A JP5583443B2 (ja) | 2010-03-26 | 2010-03-26 | 熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011202915A JP2011202915A (ja) | 2011-10-13 |
JP5583443B2 true JP5583443B2 (ja) | 2014-09-03 |
Family
ID=44879755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010072293A Active JP5583443B2 (ja) | 2010-03-26 | 2010-03-26 | 熱処理装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5583443B2 (ja) |
KR (1) | KR101745970B1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105274570B (zh) * | 2015-11-04 | 2017-05-31 | 内蒙古风光源节能环保科技有限公司 | 一种先进的阴极炭块与钢棒预热装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3261442B2 (ja) * | 1992-08-05 | 2002-03-04 | 株式会社日立製作所 | 縦型熱処理炉 |
JP2001176812A (ja) * | 1999-12-17 | 2001-06-29 | Tokyo Electron Ltd | 縦型熱処理装置 |
JP2001250787A (ja) * | 2000-03-06 | 2001-09-14 | Hitachi Kokusai Electric Inc | 基板処理装置および基板処理方法 |
JP4015818B2 (ja) * | 2001-03-28 | 2007-11-28 | 株式会社日立国際電気 | 半導体製造装置 |
JP2003031512A (ja) * | 2001-07-18 | 2003-01-31 | Rohm Co Ltd | 入出制御装置を備える拡散炉 |
JP4054597B2 (ja) * | 2002-04-23 | 2008-02-27 | 光洋サーモシステム株式会社 | 熱風循環式オーブン |
US20050098107A1 (en) * | 2003-09-24 | 2005-05-12 | Du Bois Dale R. | Thermal processing system with cross-flow liner |
JP5571291B2 (ja) * | 2008-03-26 | 2014-08-13 | 光洋サーモシステム株式会社 | 熱処理装置 |
-
2010
- 2010-03-26 JP JP2010072293A patent/JP5583443B2/ja active Active
- 2010-11-04 KR KR1020100109155A patent/KR101745970B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR101745970B1 (ko) | 2017-06-12 |
JP2011202915A (ja) | 2011-10-13 |
KR20110108233A (ko) | 2011-10-05 |
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