JP5555469B2 - 拡散剤組成物、および不純物拡散層の形成方法 - Google Patents

拡散剤組成物、および不純物拡散層の形成方法 Download PDF

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Publication number
JP5555469B2
JP5555469B2 JP2009231337A JP2009231337A JP5555469B2 JP 5555469 B2 JP5555469 B2 JP 5555469B2 JP 2009231337 A JP2009231337 A JP 2009231337A JP 2009231337 A JP2009231337 A JP 2009231337A JP 5555469 B2 JP5555469 B2 JP 5555469B2
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Prior art keywords
agent composition
diffusing agent
impurity diffusion
component
semiconductor substrate
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JP2009231337A
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English (en)
Japanese (ja)
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JP2011082247A (ja
JP2011082247A5 (https=
Inventor
喬 神園
敏郎 森田
敦史 室田
元樹 高橋
克也 谷津
隆昭 平井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Priority to JP2009231337A priority Critical patent/JP5555469B2/ja
Priority to US12/897,349 priority patent/US8475690B2/en
Publication of JP2011082247A publication Critical patent/JP2011082247A/ja
Publication of JP2011082247A5 publication Critical patent/JP2011082247A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/19—Diffusion sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
JP2009231337A 2009-10-05 2009-10-05 拡散剤組成物、および不純物拡散層の形成方法 Active JP5555469B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009231337A JP5555469B2 (ja) 2009-10-05 2009-10-05 拡散剤組成物、および不純物拡散層の形成方法
US12/897,349 US8475690B2 (en) 2009-10-05 2010-10-04 Diffusing agent composition, method of forming impurity diffusion layer, and solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009231337A JP5555469B2 (ja) 2009-10-05 2009-10-05 拡散剤組成物、および不純物拡散層の形成方法

Publications (3)

Publication Number Publication Date
JP2011082247A JP2011082247A (ja) 2011-04-21
JP2011082247A5 JP2011082247A5 (https=) 2012-11-22
JP5555469B2 true JP5555469B2 (ja) 2014-07-23

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JP2009231337A Active JP5555469B2 (ja) 2009-10-05 2009-10-05 拡散剤組成物、および不純物拡散層の形成方法

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US (1) US8475690B2 (https=)
JP (1) JP5555469B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5935255B2 (ja) * 2011-07-22 2016-06-15 日立化成株式会社 インクジェット用不純物拡散層形成組成物、不純物拡散層の製造方法、太陽電池素子の製造方法及び太陽電池の製造方法
KR20150143868A (ko) * 2011-07-25 2015-12-23 히타치가세이가부시끼가이샤 반도체 기판 및 그 제조 방법, 태양 전지 소자, 그리고 태양 전지
US8992803B2 (en) * 2011-09-30 2015-03-31 Sunpower Corporation Dopant ink composition and method of fabricating a solar cell there from
JP5991846B2 (ja) * 2012-04-24 2016-09-14 東京応化工業株式会社 膜形成用組成物、拡散剤組成物、膜形成用組成物の製造方法、及び拡散剤組成物の製造方法
JP6310649B2 (ja) * 2012-07-26 2018-04-11 東京応化工業株式会社 不純物拡散成分の拡散方法、及び太陽電池の製造方法
JP2014090153A (ja) * 2012-10-05 2014-05-15 Tokyo Ohka Kogyo Co Ltd 表面被覆膜の形成方法及び表面被覆膜を有する太陽電池
JP6114029B2 (ja) * 2012-12-19 2017-04-12 順司 廣兼 光起電力素子およびその製造方法
JP6284431B2 (ja) * 2013-09-30 2018-02-28 東京応化工業株式会社 拡散剤組成物及び不純物拡散層の形成方法
JP2015225901A (ja) * 2014-05-26 2015-12-14 東京応化工業株式会社 拡散剤組成物及び不純物拡散層の形成方法
JP2015213177A (ja) * 2015-06-15 2015-11-26 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138974A (ja) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd 絶縁ゲ−ト型電界効果トランジスタの製造方法
JPS6366929A (ja) * 1986-09-08 1988-03-25 Tokyo Ohka Kogyo Co Ltd アンチモン拡散用シリカ系被膜形成組成物
US4753827A (en) * 1986-10-03 1988-06-28 Ppg Industries, Inc. Abrasion-resistant organosiloxane/metal oxide coating
JP2658430B2 (ja) * 1988-10-18 1997-09-30 三菱マテリアル株式会社 アンチモン拡散用組成物
JP2003168810A (ja) 2001-11-30 2003-06-13 Sharp Corp 太陽電池の製造装置および製造方法
JP2003332606A (ja) 2002-05-16 2003-11-21 Sharp Corp 太陽電池の製造装置および製造方法
JP2006156646A (ja) * 2004-11-29 2006-06-15 Sharp Corp 太陽電池の製造方法
DE102005036427A1 (de) * 2005-08-03 2007-02-08 Schott Ag Substrat, umfassend zumindest eine voll- oder teilflächige makrostrukturierte Schicht, Verfahren zu deren Herstellung und deren Verwendung
JP5026008B2 (ja) * 2006-07-14 2012-09-12 東京応化工業株式会社 膜形成組成物
JP2008034543A (ja) * 2006-07-27 2008-02-14 Kyocera Corp 光電変換素子およびその製造方法
EP1890322A3 (en) * 2006-08-15 2012-02-15 Kovio, Inc. Printed dopant layers
JP5236914B2 (ja) * 2007-09-19 2013-07-17 シャープ株式会社 太陽電池の製造方法

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Publication number Publication date
US20110079262A1 (en) 2011-04-07
JP2011082247A (ja) 2011-04-21
US8475690B2 (en) 2013-07-02

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