JP5549289B2 - フルオロアルカンスルホン酸アンモニウム塩類およびその製造方法 - Google Patents

フルオロアルカンスルホン酸アンモニウム塩類およびその製造方法 Download PDF

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Publication number
JP5549289B2
JP5549289B2 JP2010054089A JP2010054089A JP5549289B2 JP 5549289 B2 JP5549289 B2 JP 5549289B2 JP 2010054089 A JP2010054089 A JP 2010054089A JP 2010054089 A JP2010054089 A JP 2010054089A JP 5549289 B2 JP5549289 B2 JP 5549289B2
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Japan
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group
ion
general formula
represented
carbon atoms
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JP2010054089A
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English (en)
Japanese (ja)
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JP2010235601A5 (enExample
JP2010235601A (ja
Inventor
将士 永盛
勇士 萩原
毅 増渕
智 成塚
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Central Glass Co Ltd
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Central Glass Co Ltd
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Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Priority to JP2010054089A priority Critical patent/JP5549289B2/ja
Priority to PCT/JP2010/054246 priority patent/WO2010104178A1/ja
Priority to KR1020117023807A priority patent/KR20110126752A/ko
Priority to US13/256,101 priority patent/US9024058B2/en
Publication of JP2010235601A publication Critical patent/JP2010235601A/ja
Publication of JP2010235601A5 publication Critical patent/JP2010235601A5/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C313/00—Sulfinic acids; Sulfenic acids; Halides, esters or anhydrides thereof; Amides of sulfinic or sulfenic acids, i.e. compounds having singly-bound oxygen atoms of sulfinic or sulfenic groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
    • C07C313/02—Sulfinic acids; Derivatives thereof
    • C07C313/04—Sulfinic acids; Esters thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C303/00—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
    • C07C303/32—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of salts of sulfonic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
JP2010054089A 2009-03-13 2010-03-11 フルオロアルカンスルホン酸アンモニウム塩類およびその製造方法 Active JP5549289B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010054089A JP5549289B2 (ja) 2009-03-13 2010-03-11 フルオロアルカンスルホン酸アンモニウム塩類およびその製造方法
PCT/JP2010/054246 WO2010104178A1 (ja) 2009-03-13 2010-03-12 フルオロアルカンスルホン酸アンモニウム塩類およびその製造方法
KR1020117023807A KR20110126752A (ko) 2009-03-13 2010-03-12 하이드록시플루오로알칸술핀산암모늄염의 제조 방법, 하이드록시플루오로알칸술폰산암모늄염의 제조 방법, 플루오로알칸술폰산오늄염의 제조 방법, 하이드록시플루오로알칸술핀산암모늄염 및 하이드록시플루오로알칸술폰산암모늄염
US13/256,101 US9024058B2 (en) 2009-03-13 2010-03-12 Ammonium fluoroalkanesulfonates and a synthesis method therefor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009061240 2009-03-13
JP2009061240 2009-03-13
JP2010054089A JP5549289B2 (ja) 2009-03-13 2010-03-11 フルオロアルカンスルホン酸アンモニウム塩類およびその製造方法

Publications (3)

Publication Number Publication Date
JP2010235601A JP2010235601A (ja) 2010-10-21
JP2010235601A5 JP2010235601A5 (enExample) 2011-11-24
JP5549289B2 true JP5549289B2 (ja) 2014-07-16

Family

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Family Applications (1)

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JP2010054089A Active JP5549289B2 (ja) 2009-03-13 2010-03-11 フルオロアルカンスルホン酸アンモニウム塩類およびその製造方法

Country Status (4)

Country Link
US (1) US9024058B2 (enExample)
JP (1) JP5549289B2 (enExample)
KR (1) KR20110126752A (enExample)
WO (1) WO2010104178A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3480508B2 (ja) 1994-02-03 2003-12-22 株式会社岡部ロック 箱製函装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5970926B2 (ja) * 2011-04-13 2016-08-17 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
JP6019849B2 (ja) * 2011-09-08 2016-11-02 セントラル硝子株式会社 含フッ素スルホン酸塩類、含フッ素スルホン酸塩樹脂、レジスト組成物及びそれを用いたパターン形成方法
JP5615860B2 (ja) * 2012-03-07 2014-10-29 信越化学工業株式会社 酸発生剤、化学増幅型レジスト材料、及びパターン形成方法
JP6037689B2 (ja) * 2012-07-10 2016-12-07 東京応化工業株式会社 アンモニウム塩化合物の製造方法、及び酸発生剤の製造方法
KR101723012B1 (ko) 2016-04-29 2017-04-04 인하대학교 산학협력단 셀룰로오스 나노섬유를 포함하는 미세조류 응집제 및 이를 이용한 미세조류 회수 및 지질 함량 증대 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6749987B2 (en) 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP4150509B2 (ja) 2000-11-20 2008-09-17 富士フイルム株式会社 ポジ型感光性組成物
US6893792B2 (en) 2002-02-19 2005-05-17 Sumitomo Chemical Company, Limited Positive resist composition
JP2004004561A (ja) 2002-02-19 2004-01-08 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP4103523B2 (ja) 2002-09-27 2008-06-18 Ｊｓｒ株式会社 レジスト組成物
JP4794835B2 (ja) * 2004-08-03 2011-10-19 東京応化工業株式会社 高分子化合物、酸発生剤、ポジ型レジスト組成物、およびレジストパターン形成方法
JP4816921B2 (ja) 2005-04-06 2011-11-16 信越化学工業株式会社 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
TWI332122B (en) 2005-04-06 2010-10-21 Shinetsu Chemical Co Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process
US7812105B2 (en) 2005-05-11 2010-10-12 Jsr Corporation Compound, polymer, and radiation-sensitive composition
JP5124806B2 (ja) 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5124805B2 (ja) * 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
EP2060949A4 (en) * 2006-09-08 2011-05-04 Jsr Corp RADIATION-SENSITIVE COMPOSITION AND PROCESS FOR PRODUCING A LOW-MOLECULAR COMPOUND FOR USE THEREIN
EP2080774B1 (en) 2006-11-10 2014-01-15 JSR Corporation Polymerizable sulfonic acid onium salt and resin
CN101687781B (zh) 2007-02-15 2015-08-12 中央硝子株式会社 光产酸剂用化合物以及使用它的抗蚀剂组合物、图案形成方法
TWI438182B (zh) 2007-07-25 2014-05-21 Sumitomo Chemical Co 適用於酸產生劑之鹽以及含有該鹽之化學放大正型抗蝕劑組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3480508B2 (ja) 1994-02-03 2003-12-22 株式会社岡部ロック 箱製函装置

Also Published As

Publication number Publication date
KR20110126752A (ko) 2011-11-23
JP2010235601A (ja) 2010-10-21
WO2010104178A1 (ja) 2010-09-16
US9024058B2 (en) 2015-05-05
US20120004447A1 (en) 2012-01-05

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