JP5543946B2 - 半導体発光素子および発光装置 - Google Patents
半導体発光素子および発光装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Description
本発明の第1実施形態による窒化物系半導体発光素子の概略の断面を図1に示す。本実施形態の半導体発光素子は、表面に幅の異なる凸部2aおよび凹部2bを有する基板2上に形成されたn型のGaNからなるガイド層3と、このGaN層3上に形成されたInGaNからなる多重量子井戸構造の発光層4と、この発光層4上に形成されたp型のGaNからなるガイド層5とを備えている。なお、本実施形態においては、コンタクト層および電極は省略している。また、各層は<0001>方向(紙面上では上方向)に成長される。
これにより、高度に制御された製造技術を必要とせず、演色性の高い半導体発光素子を得ることができる。
次に、本発明の第2実施形態による窒化物系半導体発光ダイオード(LED)を図3に示す。
次に、本発明の第3実施形態による発光装置を図4に示す。本実施形態の発光装置は、より演色性の高い白色光を得るために第2実施形態の発光素子10をセラミック・パッケージ(外囲器)23内に配置されたサブマウント26上にフリップチップ実装し、赤色蛍光体材料を分散させた樹脂22で封止した構成となっている。本実施形態の発光装置においては、凹部を有するセラミック・パッケージ23の上記凹部の底部を貫通するように設けられたリード電極27上にサブマウント26が形成されている。このサブマウント26上に一対のバンプ25が設けられ、この一対のバンプ25に、第2実施形態の発光素子10の一対の電極18、19が接続されるように、発光素子10がフリップチップ実装されている。バンプ25の材料としては、金属バンプやはんだを使用するが、金バンプを用いると好ましい。バンプ25とリード電極27は金線等の導電性ワイヤなどでサブマウント26内部を貫通して接合し電気的導通を取る。リード電極27は電気伝導性が良いことが求められる。リード電極27の材料としては、鉄、銅、銅の合金等や、これらに銀、アルミニウム、金等の金属メッキが施されたものが使用できる。
次に、本発明の第4実施形態による半導体発光素子を図5に示す。本実施形態の半導体発光素子30は、窒化物系半導体レーザ素子であって、第1実施形態と同様の凸部31aおよび凹部31bを有するn型GaNからなる基板31上に、n型GaN層32、n型AlGaNからなるクラッド層33、n型GaNからなる光ガイド層34、多重量子井戸構造のInGaNからなる活性層35、p型AlGaNからなるオーバーフロー防止層36、p型GaNからなる光ガイド層37、p型AlGaNからなるクラッド層38、p型GaN層39、およびp型GaNからなるコンタクト層40が、順次積層された積層構造を有している。なお、第1実施形態と同様に凸部31aの表面が<11−20>方向(紙面の右から左の方向)へ傾斜した傾斜面31a1となっている。また、凸部31aおよび凹部31bの幅は第1実施形態で説明した範囲に範囲の値となっている。本実施形態においては、凸部幅は400μm、凹部幅は30μmである。
次に、本発明の第5実施形態による半導体発光素子を説明する。
次に、本発明の第6実施形態による発光装置を図11乃至図15を参照して説明する。
また、ボンディングパッド90、95は、ZnO膜にGaが含まれていてもよい。
次に、本発明の第7実施形態による半導体発光素子を説明する。
層厚で重み付けした平均屈折率を意味し、すなわち、i(1≦i≦m)番目の層の屈折率をni、その層厚をdiとすると、
Nave=(n1・d1+・・・+nm・dm)/(d1+・・・+dm)
で表される値である。
3 n型GaNからなるガイド層
4 多重量子井戸構造のInGaNからなる発光層
5 p型GaNからなるガイド層
10 発光ダイオード
11 基板
12 n型GaNからなるコンタクト層
13 n型GaNからなるガイド層
14 多重量子井戸構造のInGaNからなる発光層
15 p型AlGaNからなるオーバーフロー防止層
16 p型GaNからなる層
17 p型GaNからなるコンタクト層
18 n側電極
19 p側電極
22 蛍光体を分散した封止樹脂
23 セラミック・パッケージ
25 バンプ
26 サブマウント
27 リード電極
30 半導体レーザ素子
31 基板
32 n型GaNからなるコンタクト層
33 n型AlGaNからなるクラッド層
34 n型GaNからなる光ガイド層
35 多重量子井戸構造のInGaNからなる活性層
36 p型AlGaNからなるオーバーフロー防止層
37 p型GaNからなるガイド層
38 p型AlGaNからなるクラッド層
39 p型GaNからなる層
40 p型GaNからなるコンタクト層
41 n側電極
42 p側電極
Claims (2)
- 半導体基板と、前記半導体基板上に設けられたn型GaN層と、前記n型GaN層上に設けられ、障壁層と井戸層とが交互に積層された多重量子井戸構造の発光層と、前記発光層上に設けられたp型GaNからなるコンタクト層と、前記発光層と前記n型GaN層との間および前記発光層と前記コンタクト層との間のうち前記発光層と前記n型GaN層との間のみに設けられ、バンドギャップが前記障壁層よりも大きいオーバーフロー防止層と、を備え、前記障壁層および前記井戸層の平均屈折率が前記発光層の上下の層の平均屈折率よりも低く、前記オーバーフロー防止層は正孔のオーバーフローを防止する半導体発光素子。
- 支持体と、
前記支持体に支持された請求項1記載の半導体発光素子と、
前記半導体発光素子の少なくとも一部を覆うように形成された樹脂と、
前記樹脂に分散され、前記半導体発光素子が発光する光の少なくとも一部を吸収し、波長変換して発光する蛍光体と、
を備えた発光装置。
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JP2011185180A JP5543946B2 (ja) | 2011-08-26 | 2011-08-26 | 半導体発光素子および発光装置 |
Applications Claiming Priority (1)
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